JP2011171395A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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Abstract
【解決手段】半導体素子10は基板1、基板1の一主面上に設けられた配線部2及び該配線部2上に接合部3を介して実装された少なくとも1つの半導体チップ4を含む半導体実装部品と該半導体実装部品表面のうち少なくとも該配線部2及び該接合部3が露出した表面上に設けられた被覆層5とを具備する。被覆層5は樹脂材料を塗布して形成することができる。
【選択図】図1
Description
該半導体実装部品表面のうち少なくとも該配線部及び該接合部が露出した表面上に設けられた被覆層とを具備することを特徴とする。
実施例1,比較例1
銅板の樹脂コーティング
サンプルとして100mm×50mm×1.0mm厚の銅板を用意し、スプレー塗布法を用いて、樹脂コーティングを行った。用いた樹脂は、フッ素系樹脂とアクリル系である。フッ素系樹脂は、フッ素系ポリマーを主成分としたフッ素系溶剤で、比重が1.41、防湿性(櫛形電極基板 60℃−95%RH 500時間後)が1.0×1011Ω、熱分解温度が280℃である。アクリル系樹脂は、アクリルを主成分とした比重0.92、耐水性は20×109Ωである。連続使用温度範囲は、165℃のものを使用。コーティング膜の厚さは、それぞれ5μm、10μm、50μm、50μm以上とした。
次に、樹脂コーティングしたサンプル及び樹脂コーティングしていないサンプルについて、腐食性ガスまたは高湿環境による耐環境性試験を実施した。
半導体素子
基板として、5mm厚のAlSiC基板を用意し、300μm厚の銅配線を形成した後、はんだ材料としてSn−3.0重量%Ag−0.5重量%Cuを用いて、Siを用いたIGBT素子とをはんだ接合した。得られた半導体実装部品表面に、スプレー塗布によりフッ素系樹脂コーティングを10μm厚で形成し、半導体素子サンプルを得た。
図6に示すように、樹脂コーティングを形成しないこと以外は実施例2と同様にして半導体素子サンプルを形成した。得られた半導体素子サンプル47について、同様に、耐環境性試験を行った。
Claims (7)
- 基板、基板の一主面上に設けられた配線部、及び該配線部上に接合部を介して実装された少なくとも1つの半導体チップを含む半導体実装部品と、
該半導体実装部品表面のうち少なくとも該配線部及び該接合部が露出した表面上に設けられた被覆層とを具備することを特徴とする半導体素子。 - 前記被覆層は、樹脂材料を塗布して形成されることを特徴とする請求項1に記載の半導体素子。
- 前記樹脂材料は、フッ素系樹脂、ウレタン系樹脂、及びアクリル系樹脂からなる群から選択される少なくとも1種であることを特徴とする請求項2に記載の半導体素子。
- 前記被覆層は、フッ素系樹脂からなる第1の被覆層と、該第1の被覆層上に積層された該第1の被覆層とは異なる樹脂材料からなる第2の被覆層との積層であることを特徴とする請求項2または3に記載の半導体素子。
- 前記被覆層は、10μmないし50μmの厚さを有することを特徴とする請求項1ないし4のいずれか1項に記載の半導体素子。
- 前記接合部は、鉛を含まず、かつAg及びCuのうち少なくとも1種の高温用接合材料を含むことを特徴とする請求項1ないし5のいずれか1項に記載の半導体素子。
- 前記半導体チップは、絶縁ゲート型バイポーラトランジスタチップを含み、前記半導体実装部品上に充填された絶縁性ゲルと、該半導体実装部品及び該絶縁性ゲルを封止するケースとをさらに含むことを特徴とする請求項1ないし6のいずれか1項に記載の半導体素子。
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Cited By (2)
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CN112201628A (zh) * | 2020-08-24 | 2021-01-08 | 株洲中车时代半导体有限公司 | 一种功率模块封装结构及其制备方法 |
US11380599B2 (en) | 2019-06-24 | 2022-07-05 | Fuji Electric Co., Ltd. | Semiconductor module, vehicle, and method of manufacturing semiconductor module |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005005356A (ja) * | 2003-06-10 | 2005-01-06 | Hitachi Ltd | パワー半導体モジュール及びその製造方法 |
JP2006032617A (ja) * | 2004-07-15 | 2006-02-02 | Hitachi Ltd | 半導体パワーモジュール |
JP2006307147A (ja) * | 2005-03-08 | 2006-11-09 | Daikin Ind Ltd | 電子・電気部品用防湿コーティング組成物および防湿コーティング膜の形成方法 |
JP2009038075A (ja) * | 2007-07-31 | 2009-02-19 | Toyota Motor Corp | 電子部品 |
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JP2005005356A (ja) * | 2003-06-10 | 2005-01-06 | Hitachi Ltd | パワー半導体モジュール及びその製造方法 |
JP2006032617A (ja) * | 2004-07-15 | 2006-02-02 | Hitachi Ltd | 半導体パワーモジュール |
JP2006307147A (ja) * | 2005-03-08 | 2006-11-09 | Daikin Ind Ltd | 電子・電気部品用防湿コーティング組成物および防湿コーティング膜の形成方法 |
JP2009038075A (ja) * | 2007-07-31 | 2009-02-19 | Toyota Motor Corp | 電子部品 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11380599B2 (en) | 2019-06-24 | 2022-07-05 | Fuji Electric Co., Ltd. | Semiconductor module, vehicle, and method of manufacturing semiconductor module |
CN112201628A (zh) * | 2020-08-24 | 2021-01-08 | 株洲中车时代半导体有限公司 | 一种功率模块封装结构及其制备方法 |
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