JP2011082479A - 白色発光装置、白色発光装置の製造方法および応用 - Google Patents
白色発光装置、白色発光装置の製造方法および応用 Download PDFInfo
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- 229910052788 barium Inorganic materials 0.000 claims description 5
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- 229910052799 carbon Inorganic materials 0.000 claims description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical group [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
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- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- -1 BaCO 3 Chemical compound 0.000 description 1
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- FOSPKRPCLFRZTR-UHFFFAOYSA-N zinc;dinitrate;hydrate Chemical compound O.[Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O FOSPKRPCLFRZTR-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】白色発光装置1は、紫外(UV)発光ダイオード(LED)チップ101と第1の蛍光体と第2の蛍光体とから構成され、UV LEDチップ101は、第1の放射を発生し、第1の蛍光体は、Zn(C3N2H4)2粉末から構成され且つ第1の放射によって励起されて第2の放射を発生し、第2の蛍光体は、第1の放射および/または第2の放射によって励起されて第3の放射を発生する。第3の放射は、その後、第1の放射および/または第2の放射と混合されて白色光を発生する。
【選択図】図1
Description
(蛍光体の製造)
第1の蛍光体は、以下の工程によって製造された。まず、約0.6gのイミダゾール(IMZ)化合物、約1.151gの硝酸亜鉛水和物(Zn(NO3)2.4H2O)および80mlのジメチルホルムアミド(DMF)が密閉反応器中に置かれた。次に、第1の蛍光体を作製するために、約5℃/分の昇温速度で約130℃まで温度が上昇する水熱法が実施された。続いて、その温度は約24時間維持されて、その後自然に室温にまで降下された。続いて、乾燥工程が実施された。続いて、先ず、溶剤が除去されて、有機金属錯体Zn(C3N2H4)2結晶を生じ、結果として得られる結晶は、その後、乾燥のために24時間85℃のオーブン中に真空条件下で置かれて、有機金属錯体Zn(C3N2H4)2 粉末が得られた。
約350nm〜約430nmの主要波長を有するUV LEDチップが、(SrBa)2SiO4:Eu2+粉末および有機金属錯体Zn(C3N2H4)2粉末それぞれを励起するための励起源として使用された。結果として得られる発光スペクトルは、図2Aおよび図2Bにそれぞれ示される。図を参照すると、UV LEDチップによって励起された第1の蛍光体は、青色の蛍光を発生し得、一方、UV LEDチップによって励起された第2の蛍光体は、黄色の蛍光を発生し得る。図3に示すように、前述の発光スペクトルのデータは、国際照明委員会(CIE)によって1931年に制定されたCIE色度座標図の公式を介して蛍光体のCIE色度座標へと変換された。ここで、数字30は、UV LEDチップのCIE色度座標を示し、数字32は、第1の蛍光体のCIE色度座標を示し、数字34は、第2の蛍光体のCIE色度座標を示す。
図1に示す白色発光装置1は、約350nm〜約430nmの主要波長を有するUV LEDチップ101を使用した。ここで使用された蛍光体層103は、以下の工程によって製造された。まず、有機金属錯体Zn(C3N2H4)2粉末が、約4:1の重量比で(SrBaEu)2SiO4粉末と混合された。結果として得られた混合物は、その後、シリカゲルと混合された。そして、エポキシ樹脂がパッケージ層16の材料として使用された。
10 ホルダ
101 紫外発光ダイオード(UV LED)
103 蛍光体層
12 第1の電極
14 第2の電極
16 パッケージ層
S 収容スペース
30,32,34,36 CIE色度座標
Claims (20)
- 第1の放射を発生するための紫外(UV)発光ダイオード(LED)チップと、
Zn(C3N2H4)2粉末から構成され、前記第1の放射によって励起されて、該第1の放射の一部を、該第1の放射より長波長を有する第2の放射へと変換する第1の蛍光体と、
前記第1の放射および/または前記第2の放射によって励起されて第3の放射を発生する第2の蛍光体と、
から構成され、
前記第3の放射が、前記第1の放射および/または前記第2の放射と混合されて白色光を発生する、ことを特徴とする白色発光装置。 - 前記第2の蛍光体が、Be,Mg,Ca,SrおよびBaからなる群から選択される少なくとも1つの元素と、C,Si,Ge,Sn,Ti,ZrおよびHfからなる群から選択される少なくとも1つの元素と、希土類元素から選択される一つの活性化剤と、から構成される、ことを特徴とする請求項1に記載の白色発光装置。
- 前記活性化剤が、ユウロピウム(Eu)イオンである、ことを特徴とする請求項2に記載の白色発光装置。
- 前記第2の蛍光体が、一般式、MSiO4:RまたはMSi(OCl)4:Rで表され、式中、MはCa,SrおよびBaからなる群から選択される少なくとも1つのII族元素であり、RはEuイオンである、ことを特徴とする請求項2に記載の白色発光装置。
- 前記第2の蛍光体は、(SrBa)2SiO4:Eu2+または(SrBa)2Si(OCl)4:Eu2+である、ことを特徴とする請求項4に記載の白色発光装置。
- 前記第1の蛍光体と前記第2の蛍光体との重量比が約1:2〜約1:6である、ことを特徴とする請求項1乃至5のいずれか1項に記載の白色発光装置。
- 前記第1の蛍光体と前記第2の蛍光体との重量比が約1:4である、ことを特徴とする請求項6に記載の白色発光装置。
- 前記白色光の色温度が約6000K〜約7500Kである、ことを特徴とする請求項1乃至5のいずれか1項に記載の白色発光装置。
- 前記第1の放射の波長が約350nm〜約430nmであり、前記第2の放射の波長が約300nm〜約600nmである、ことを特徴とする請求項1乃至5のいずれか1項に記載の白色発光装置。
- 前記第1の放射の波長が約350nm〜約430nmであり、前記第2の放射の波長が約440nmである、ことを特徴とする請求項9に記載の白色発光装置。
- 前記第2の蛍光体は前記第2の放射によって励起され、前記第3の放射の波長は約500nm〜約700nmである、ことを特徴とする請求項9に記載の白色発光装置。
- 収容スペースを有するホルダをさらに備え、前記UV LEDチップが該収容スペースに載置される、ことを特徴とする請求項1乃至5のいずれか1項に記載の白色発光装置。
- 前記第1の蛍光体および前記第2の蛍光体は、前記収容スペース内に充填され、前記UV LEDチップは、該第1の蛍光体および該第2の蛍光体によって覆われる、ことを特徴とする請求項12に記載の白色発光装置。
- 前記第2の蛍光体は、一般式、MSiO4:RまたはMSi(OCl)4:Rで表され、式中、Mは、Ca,SrおよびBaからなる群から選択される少なくとも1つのII族元素であり、RはEuイオンである、ことを特徴とする請求項13に記載の白色発光装置。
- 前記第1の蛍光体および前記第2の蛍光体は、前記UV LEDチップの発光面上に、コンフォーマルに形成される、ことを特徴とする請求項12に記載の白色発光装置。
- 前記UV LEDチップが、個々に前記ホルダに電気的に接続された2つの電極を有する、ことを特徴とする請求項12に記載の白色発光装置。
- 第1の放射を発生するためのUV LEDチップを準備する工程と、
第1の蛍光体と第2の蛍光体とを準備する工程と、
該第1の蛍光体と該第2の蛍光体とを混合する工程と、
を備え、
前記第1の蛍光体は、Zn(C3N2H4)2粉末から構成され、かつ前記第1の放射によって励起されて第2の放射を発生し、
前記第2の蛍光体は、前記第1の放射および/または前記第2の放射によって励起されて第3の放射を発生し、
該第3の放射は、前記第1の放射および/または前記第2の放射と混合されて白色光を発生する、
ことを特徴とする白色発光装置の製造方法。 - 前記Zn(C3N2H4)2粉末は、水熱法によって製造される、ことを特徴とする請求項17に記載の方法。
- 前記水熱法が、約130℃〜約250℃の温度下で、密閉反応器中で実施される、ことを特徴とする請求項18に記載の方法。
- 前記第2の蛍光体は、化学合成法、固相・気相焼結法、ゾルゲル法、直接反応法および有機金属熱分解法からなる群から選択される方法によって製造される、ことを特徴とする請求項17に記載の方法。
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WO2020022684A1 (ko) * | 2018-07-24 | 2020-01-30 | 서울바이오시스주식회사 | 아연 산화물층을 구비하는 발광 다이오드 및 그것을 제조하는 방법 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10054485B2 (en) | 2016-03-17 | 2018-08-21 | Raytheon Company | UV LED-phosphor based hyperspectral calibrator |
CN107305313B (zh) * | 2016-04-19 | 2020-11-06 | 台达电子工业股份有限公司 | 荧光剂装置 |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53119287A (en) * | 1977-03-28 | 1978-10-18 | Dainippon Toryo Co Ltd | Fluorescent substance |
JPS54100990A (en) * | 1978-01-26 | 1979-08-09 | Toshiba Corp | Manufacture of fluorescent substance |
JPH02176760A (ja) * | 1988-12-28 | 1990-07-09 | Minolta Camera Co Ltd | 電荷付与材 |
JPH10265478A (ja) * | 1997-03-25 | 1998-10-06 | Mitsubishi Chem Corp | イミダゾール金属錯体及びそれを用いた有機電界発光素子 |
JP2001034013A (ja) * | 1999-07-19 | 2001-02-09 | Canon Inc | 正帯電性トナー |
JP2002531956A (ja) * | 1998-11-30 | 2002-09-24 | ゼネラル・エレクトリック・カンパニイ | 蛍光体組成物を有する発光デバイス |
JP2003261868A (ja) * | 2002-03-08 | 2003-09-19 | National Institute Of Advanced Industrial & Technology | ケイ酸塩蛍光体の製造方法 |
JP2005244226A (ja) * | 2004-02-23 | 2005-09-08 | Lumileds Lighting Us Llc | 波長変換型半導体発光素子 |
JP2005340850A (ja) * | 2004-05-26 | 2005-12-08 | Lumileds Lighting Us Llc | 光子バンドギャップ材料と蛍光材料を含んでいる半導体発光素子 |
JP2008509552A (ja) * | 2004-08-04 | 2008-03-27 | インテマティックス・コーポレーション | 白色光発光ダイオード用の新規蛍光体システム |
JP2009073914A (ja) * | 2007-09-20 | 2009-04-09 | Koito Mfg Co Ltd | 緑色発光蛍光体とそれを用いた発光モジュール |
JP2009173905A (ja) * | 2007-12-28 | 2009-08-06 | Mitsubishi Chemicals Corp | 蛍光体、蛍光体の製造方法、蛍光体含有組成物および発光装置 |
JP2009179662A (ja) * | 2008-01-29 | 2009-08-13 | Toshiba Corp | 蛍光体および発光装置 |
JP2009224431A (ja) * | 2008-03-14 | 2009-10-01 | Nichia Corp | 半導体装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW406442B (en) | 1998-07-09 | 2000-09-21 | Sumitomo Electric Industries | White colored LED and intermediate colored LED |
US6656608B1 (en) * | 1998-12-25 | 2003-12-02 | Konica Corporation | Electroluminescent material, electroluminescent element and color conversion filter |
EP1447853B1 (en) * | 2001-10-01 | 2012-08-08 | Panasonic Corporation | Semiconductor light emitting element and light emitting device using this |
US6730942B2 (en) | 2002-01-24 | 2004-05-04 | Toyoda Gosei Co., Ltd. | Light emitting apparatus |
CN1233046C (zh) | 2002-09-29 | 2005-12-21 | 光宝科技股份有限公司 | 一种制作白光发光二极管光源的方法 |
JP5134820B2 (ja) * | 2004-12-24 | 2013-01-30 | 株式会社東芝 | 液晶表示装置 |
CN100403563C (zh) | 2005-04-18 | 2008-07-16 | 光宝科技股份有限公司 | 白光发光二极管元件及相关荧光粉与制备方法 |
US20070159062A1 (en) * | 2006-01-12 | 2007-07-12 | Luminoso Photoelectric Technology Co. | Light-enhanced element |
PL1988996T3 (pl) * | 2006-02-28 | 2018-01-31 | Univ Michigan Regents | Otrzymywanie szkieletów zeolitu z grupami funkcyjnymi |
TWI314368B (en) * | 2006-06-29 | 2009-09-01 | Everlight Electronics Co Ltd | White light-emitting apparatus |
TW200842182A (en) * | 2007-04-30 | 2008-11-01 | Univ Nat Central | Phosphor for producing white light under excitation of UV light and method for making same |
-
2009
- 2009-10-05 TW TW098133708A patent/TWI426629B/zh not_active IP Right Cessation
-
2010
- 2010-02-11 EP EP10153298A patent/EP2305774A1/en not_active Withdrawn
- 2010-02-25 JP JP2010040393A patent/JP5421818B2/ja not_active Expired - Fee Related
- 2010-10-05 US US12/898,169 patent/US8314543B2/en not_active Expired - Fee Related
-
2012
- 2012-10-12 US US13/651,069 patent/US8662950B2/en not_active Expired - Fee Related
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53119287A (en) * | 1977-03-28 | 1978-10-18 | Dainippon Toryo Co Ltd | Fluorescent substance |
JPS54100990A (en) * | 1978-01-26 | 1979-08-09 | Toshiba Corp | Manufacture of fluorescent substance |
JPH02176760A (ja) * | 1988-12-28 | 1990-07-09 | Minolta Camera Co Ltd | 電荷付与材 |
JPH10265478A (ja) * | 1997-03-25 | 1998-10-06 | Mitsubishi Chem Corp | イミダゾール金属錯体及びそれを用いた有機電界発光素子 |
JP2002531956A (ja) * | 1998-11-30 | 2002-09-24 | ゼネラル・エレクトリック・カンパニイ | 蛍光体組成物を有する発光デバイス |
JP2001034013A (ja) * | 1999-07-19 | 2001-02-09 | Canon Inc | 正帯電性トナー |
JP2003261868A (ja) * | 2002-03-08 | 2003-09-19 | National Institute Of Advanced Industrial & Technology | ケイ酸塩蛍光体の製造方法 |
JP2005244226A (ja) * | 2004-02-23 | 2005-09-08 | Lumileds Lighting Us Llc | 波長変換型半導体発光素子 |
JP2005340850A (ja) * | 2004-05-26 | 2005-12-08 | Lumileds Lighting Us Llc | 光子バンドギャップ材料と蛍光材料を含んでいる半導体発光素子 |
JP2008509552A (ja) * | 2004-08-04 | 2008-03-27 | インテマティックス・コーポレーション | 白色光発光ダイオード用の新規蛍光体システム |
JP2009073914A (ja) * | 2007-09-20 | 2009-04-09 | Koito Mfg Co Ltd | 緑色発光蛍光体とそれを用いた発光モジュール |
JP2009173905A (ja) * | 2007-12-28 | 2009-08-06 | Mitsubishi Chemicals Corp | 蛍光体、蛍光体の製造方法、蛍光体含有組成物および発光装置 |
JP2009179662A (ja) * | 2008-01-29 | 2009-08-13 | Toshiba Corp | 蛍光体および発光装置 |
JP2009224431A (ja) * | 2008-03-14 | 2009-10-01 | Nichia Corp | 半導体装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020022684A1 (ko) * | 2018-07-24 | 2020-01-30 | 서울바이오시스주식회사 | 아연 산화물층을 구비하는 발광 다이오드 및 그것을 제조하는 방법 |
US11063185B2 (en) | 2018-07-24 | 2021-07-13 | Seoul Viosys Co., Ltd. | Light emitting diode with zinc oxide layer and method of fabricating the same |
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US20110080086A1 (en) | 2011-04-07 |
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US20130045655A1 (en) | 2013-02-21 |
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