JP2011017722A - 加速粒子および高エネルギ放射線センサ - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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Abstract
【解決手段】加速電子検出器はCMOS構造のモノリシックセンサのアレイを備え、各センサは基板(10)と、エピ層(11)と、p+ウェル(12)と、エピ層(11)によってp+ウェル(12)から分離されたn+ウェル(13)とを含む。p+ウェルには複数のNMOSトランジスタが集積される。センサはまた、バイアス電圧の印加によりエピ層内に発生する電荷担体がn+ウェル(13)にドリフトされるように、エピ層内に欠乏層を確立する深いn領域(15)をp+ウェル(12)の下に含む。検出器は改善された放射線耐性を有し、したがってそれは電子顕微鏡のような加速電子の検出および撮像に適する。
【選択図】 図5
Description
ルの表面積の大部分は読出し回路機構に充当されたので、ピクセルの表面積のごく一部分だけが入射光を感知した。これはアクティブピクセルセンサアレイの解像度を制限し、この技術を多くの撮像用途に対し、特にトラッキング用途に対し、不適切なものにした。
Claims (23)
- 加速粒子または高エネルギ放射線の検出に使用するように適応されたモノリシックセンサであって、
第一導電型のドーパントを有する電荷担体輸送層と、
前記電荷担体輸送層より高い濃度の第一導電型のドーパントを有し、かつそれに集積された読出し回路機構を有する少なくとも一つの第一ウェルと、
前記電荷担体輸送層との第一接合を形成する第二導電型のドーパントを有する少なくとも一つの第二ウェルと、
前記第一ウェルに隣接して位置し、前記第二導電型のドーパントを有する第三ウェルと、
前記第三ウェルと前記電荷担体輸送層との間に設けられた分離層と、を備え、
前記第二ウェルは、前記分離層を通って前記電荷担体輸送層まで延びており、
よって前記電荷担体輸送層内で電荷担体が生成されたときに、前記電荷担体が前記電荷担体輸送層と第二ウェルとの間の接合に向かって移動して収集されて信号を生成するように構成され、
加速粒子または高エネルギ放射線による衝撃に耐えることのできるモノリシックセンサ。 - 前記電荷担体輸送層ならびに前記第一および第二ウェルが相補型金属酸化物半導体構造内に形成される、請求項1に記載のモノリシックセンサ。
- 前記センサにバイアス電圧を印加するための手段をさらに含む、請求項1または2に記載のモノリシックセンサ。
- 前記バイアス電圧が印加されたときに前記電荷担体輸送層がドリフトフィールドを含む、請求項3に記載のモノリシックセンサ。
- 前記バイアス電圧が印加されたときに前記電荷担体輸送層が実質的に完全に空乏化する、請求項4に記載のモノリシックセンサ。
- 前記センサが15kRad以上の放射線量に耐えるように適応された、請求項5に記載のモノリシックセンサ。
- 前記第一ウェルおよび前記第三ウェルは、いずれも、前記第二ウェルにおいて発生した前記信号の読出しを実行するように構成された、1またはそれ以上のトランジスタを有する、請求項1ないし6のいずれか一項に記載のモノリシックセンサ。
- 前記分離層は、前記第一ウェルおよび前記電荷担体輸送層の間にも設けられている、請求項1ないし7のいずれか一項に記載のモノリシックセンサ。
- 前記分離層は、前記第一ウェルより高い濃度の前記第一導電型のドーパントを有する、請求項1ないし8のいずれか一項に記載のモノリシックセンサ。
- 前記センサ用の前記読出し回路機構が、
1)前記第一ウェルに配置された少なくとも一つのnMOSトランジスタ、または、
2)前記第二ウェルに配置された少なくとも一つのpMOSトランジスタ、または、
3)前記第一ウェルおよび前記第二ウェルにそれぞれ配置された少なくとも一つのnMOSトランジスタおよび少なくとも一つのpMOSトランジスタ、
のうちの一つを備える、請求項1ないし8のいずれか一項に記載のモノリシックセンサ。 - 半導体基板をさらに備え、前記電荷担体輸送層が前記半導体基板より低濃度のドーパントを有する、請求項1ないし10のいずれか一項に記載のモノリシックセンサ。
- 前記分離層が前記電荷担体輸送層より高い濃度で前記第一導電型のドーパントを含む半導体層を備える、請求項1ないし11のいずれか一項に記載のモノリシックセンサ。
- 前記分離層は絶縁誘電体を備える、請求項1ないし11のいずれか一項に記載のモノリシックセンサ。
- 前記第一ウェルと、前記第二導電型のドーパントを有する領域との間の接合が、前記第一型の加速粒子またはイオン化放射線とは異なる第二型の入射加速粒子または高イオン化放射線の結果として信号を発生するための第二収集接合を形成する、請求項1に記載のモノリシックセンサ。
- 前記第一および第二ウェル間の前記接合が第二接合を形成する、請求項14に記載のモノリシックセンサ。
- 前記第一および第二接合が、加速粒子の異なるエネルギを示す信号を選択的に発生する、請求項14または15のいずれかに記載のモノリシックセンサ。
- 前記第二ウェルが前記第一ウェルから分離される、請求項1に記載のモノリシックセンサ。
- 100ミクロン以下の厚さを有する半導体基板をさらに備える、請求項1ないし17のいずれか一項に記載のモノリシックセンサ。
- 前記半導体基板が前記第一導電型のドーパントを含む、請求項18に記載のモノリシックセンサ。
- 前記センサアレイの裏面または前面に一層のヨウ化水銀層を含む、請求項1ないし19のいずれか一項に記載のモノリシックセンサ。
- 前記センサアレイの裏面または前面に一層のヨウ化セシウム層を含む、請求項1ないし19のいずれか一項に記載のモノリシックセンサ。
- 加速粒子または高エネルギイオン化放射線による衝撃に応答して空間分解信号を発生するための相補型金属酸化物半導体デバイスを含む、集積された読出し回路機構を有する請求項1ないし21のいずれか一項に記載のモノリシックセンサの集積アレイを備えた検出器。
- 電子源と、電子ビーム加速および閉込め手段と、少なくとも一つの電子ビーム集束システムと、第一および第二の表裏両面を有する検出器であって、請求項1ないし21のいずれか一項に記載のモノリシックセンサの集積アレイを備えた検出器とを含む真空排気筐体を備えた電子顕微鏡。
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GB0310602.8 | 2003-05-08 | ||
GB0310602A GB0310602D0 (en) | 2003-05-08 | 2003-05-08 | Monolithic detector for electromagnetic radiation and ionising particles |
GB0319825A GB0319825D0 (en) | 2003-08-22 | 2003-08-22 | Accelerated particle and high energy radiation analyser systems |
GB0319825.6 | 2003-08-22 |
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JP2006506237A Division JP4824542B2 (ja) | 2003-05-08 | 2004-05-07 | 電子顕微鏡 |
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JP2010218034A Expired - Lifetime JP4824826B2 (ja) | 2003-05-08 | 2010-09-29 | モノリシックセンサ、ならびに、それを備えたセンサアレイ、検出器、および電子顕微鏡 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020535586A (ja) * | 2017-09-29 | 2020-12-03 | エーエスエムエル ネザーランズ ビー.ブイ. | 荷電粒子のためのマルチセル検出器 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7262411B2 (en) * | 2004-12-08 | 2007-08-28 | The Regents Of The University Of California | Direct collection transmission electron microscopy |
US7151287B1 (en) | 2005-03-25 | 2006-12-19 | Cypress Semiconductor Corporation | Minimizing the effect of directly converted x-rays in x-ray imagers |
GB0621040D0 (en) * | 2006-10-23 | 2006-11-29 | Melexis Nv | CMOS photodiode |
WO2008093252A1 (en) | 2007-01-31 | 2008-08-07 | Koninklijke Philips Electronics N.V. | Radiation sensitive detector |
US8822936B2 (en) * | 2007-10-04 | 2014-09-02 | Danmarks Tekniske Universitet | Detector for detecting particle radiation of an energy in the range of 150 eV to 300 keV, and a materials mapping apparatus with such a detector |
US7952073B2 (en) * | 2008-08-01 | 2011-05-31 | Direct Electron, Lp | Apparatus and method including a direct bombardment detector and a secondary detector for use in electron microscopy |
JP5540088B2 (ja) * | 2009-06-26 | 2014-07-02 | ガタン インコーポレイテッド | 薄い電子感受性層を有する撮像電子検出器において後方散乱電子と入射電子とを弁別する方法 |
GB0913047D0 (en) | 2009-07-27 | 2009-09-02 | Stfc Science & Technology | Active pixel sensor readout |
JP5065516B2 (ja) * | 2010-08-04 | 2012-11-07 | エフ イー アイ カンパニ | 薄い電子検出器における後方散乱の減少 |
EP2461347A1 (en) | 2010-12-06 | 2012-06-06 | Fei Company | Detector system for transmission electron microscope |
JP2013038174A (ja) | 2011-08-05 | 2013-02-21 | Canon Inc | 軟x線検出装置、及び軟x線検出システム |
CN102540056B (zh) * | 2011-12-29 | 2014-04-02 | 北京控制工程研究所 | 一种aps芯片测试及筛选方法 |
DE102012213411B4 (de) * | 2012-07-31 | 2018-11-29 | Siemens Healthcare Gmbh | Verfahren zur Detektion von Röntgenstrahlung |
US9767986B2 (en) * | 2014-08-29 | 2017-09-19 | Kla-Tencor Corporation | Scanning electron microscope and methods of inspecting and reviewing samples |
IT201700122669A1 (it) | 2017-10-27 | 2019-04-27 | Lfoundry Srl | Sensore integrato di radiazione ionizzante e di particelle ionizzanti |
WO2020106199A1 (en) | 2018-11-19 | 2020-05-28 | Prismatic Sensors Ab | Edge-on photon-counting detector |
KR102660806B1 (ko) * | 2019-02-26 | 2024-04-26 | 에이에스엠엘 네델란즈 비.브이. | 이득 엘리먼트를 갖는 하전 입자 검출기 |
US10957707B2 (en) | 2019-04-23 | 2021-03-23 | International Business Machines Corporation | Vertical transistor based radiation dosimeter |
EP3767663A1 (en) * | 2019-07-16 | 2021-01-20 | FEI Company | Method of manufacturing a charged particle detector |
US11699607B2 (en) * | 2021-06-09 | 2023-07-11 | Kla Corporation | Segmented multi-channel, backside illuminated, solid state detector with a through-hole for detecting secondary and backscattered electrons |
CN115356545B (zh) * | 2022-08-10 | 2023-04-11 | 中国科学院近代物理研究所 | 一种用于带电粒子探测的新型像素单元结构及其使用方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63292670A (ja) * | 1987-05-26 | 1988-11-29 | Fuji Photo Film Co Ltd | 固体撮像素子 |
JPH0374874A (ja) * | 1989-08-16 | 1991-03-29 | Sony Corp | 固体撮像装置 |
JPH03191570A (ja) * | 1989-12-20 | 1991-08-21 | Nec Corp | 固体撮像素子 |
JPH06140502A (ja) * | 1992-10-26 | 1994-05-20 | Nec Corp | 半導体装置の製造方法 |
JPH10284748A (ja) * | 1997-02-10 | 1998-10-23 | S I I R D Center:Kk | 半導体放射線検出装置の製造方法 |
JPH1131839A (ja) * | 1997-02-10 | 1999-02-02 | Interuniv Micro Electron Centrum Vzw | 電磁放射検出器、該検出器を用いた高感度ピクセル構造、及び該検出器の製造方法 |
JP2002203954A (ja) * | 2000-10-31 | 2002-07-19 | Sharp Corp | 回路内蔵受光素子 |
Family Cites Families (53)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US605619A (en) * | 1898-06-14 | wentscher | ||
NL7804038A (nl) | 1978-04-17 | 1979-10-19 | Philips Nv | Elektronenmikroskoop. |
US4399360A (en) | 1980-08-08 | 1983-08-16 | University Patents, Inc. | Transmission electron microscope employing sequential pixel acquistion for display |
JPH07153988A (ja) * | 1993-12-01 | 1995-06-16 | Nikon Corp | 「増幅型」光電変換装置及びその駆動方法 |
US5471515A (en) | 1994-01-28 | 1995-11-28 | California Institute Of Technology | Active pixel sensor with intra-pixel charge transfer |
US5949483A (en) | 1994-01-28 | 1999-09-07 | California Institute Of Technology | Active pixel sensor array with multiresolution readout |
US5841126A (en) | 1994-01-28 | 1998-11-24 | California Institute Of Technology | CMOS active pixel sensor type imaging system on a chip |
WO1995026573A1 (fr) | 1994-03-28 | 1995-10-05 | Seiko Instruments Inc. | Detecteur de lumiere et de rayonnement a semi-conducteur |
US5541402A (en) | 1994-10-17 | 1996-07-30 | At&T Corp. | Imaging active pixel device having a non-destructive read-out gate |
US5625210A (en) | 1995-04-13 | 1997-04-29 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
US5933190A (en) | 1995-04-18 | 1999-08-03 | Imec Vzw | Pixel structure, image sensor using such pixel structure and corresponding peripheral circuitry |
US5614744A (en) | 1995-08-04 | 1997-03-25 | National Semiconductor Corporation | CMOS-based, low leakage active pixel array with anti-blooming isolation |
US5587596A (en) | 1995-09-20 | 1996-12-24 | National Semiconductor Corporation | Single MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range |
JPH1041488A (ja) * | 1996-07-19 | 1998-02-13 | Nec Corp | 回路内蔵受光素子 |
US5909026A (en) | 1996-11-12 | 1999-06-01 | California Institute Of Technology | Integrated sensor with frame memory and programmable resolution for light adaptive imaging |
EP0903935A1 (en) | 1997-09-22 | 1999-03-24 | Interuniversitair Micro-Elektronica Centrum Vzw | Method for obtaining a high dynamic range read-out signal of a CMOS-based pixel structure and such CMOS-based pixel structure |
EP0883187A1 (en) | 1997-06-04 | 1998-12-09 | Interuniversitair Micro-Elektronica Centrum Vzw | A detector for electromagnetic radiation, pixel structure with high sensitivity using such detector and method of manufacturing such detector |
US6815791B1 (en) * | 1997-02-10 | 2004-11-09 | Fillfactory | Buried, fully depletable, high fill factor photodiodes |
EP0858212B1 (en) | 1997-02-10 | 2002-05-29 | Fill Factory | Method for obtaining a high dynamic range read-out signal of a CMOS-based pixel structure and such CMOS-based pixel structure |
US6011251A (en) | 1997-06-04 | 2000-01-04 | Imec | Method for obtaining a high dynamic range read-out signal of a CMOS-based pixel structure and such CMOS-based pixel structure |
JPH10284753A (ja) * | 1997-04-01 | 1998-10-23 | Sony Corp | 半導体装置及びその製造方法 |
US5998790A (en) | 1997-06-18 | 1999-12-07 | The Regents Of The University Of California | Transmission electron microscope CCD camera |
US6150683A (en) | 1997-06-27 | 2000-11-21 | Foveon, Inc. | CMOS-based color pixel with reduced noise in the blue signal |
WO1999016238A1 (en) | 1997-09-22 | 1999-04-01 | Interuniversitair Micro-Elektronica Centrum | Devices and methods for improving the image quality in an image sensor |
US6057586A (en) | 1997-09-26 | 2000-05-02 | Intel Corporation | Method and apparatus for employing a light shield to modulate pixel color responsivity |
US6005619A (en) | 1997-10-06 | 1999-12-21 | Photobit Corporation | Quantum efficiency improvements in active pixel sensors |
JP3484962B2 (ja) * | 1997-12-09 | 2004-01-06 | 住友電気工業株式会社 | 受光素子 |
US6051857A (en) * | 1998-01-07 | 2000-04-18 | Innovision, Inc. | Solid-state imaging device and method of detecting optical signals using the same |
US6027956A (en) * | 1998-02-05 | 2000-02-22 | Integration Associates, Inc. | Process for producing planar dielectrically isolated high speed pin photodiode |
US6169318B1 (en) | 1998-02-23 | 2001-01-02 | Polaroid Corporation | CMOS imager with improved sensitivity |
JP3554483B2 (ja) * | 1998-04-22 | 2004-08-18 | シャープ株式会社 | Cmos型固体撮像装置 |
US5965875A (en) | 1998-04-24 | 1999-10-12 | Foveon, Inc. | Color separation in an active pixel cell imaging array using a triple-well structure |
US6242743B1 (en) * | 1998-08-11 | 2001-06-05 | Mosaic Imaging Technology, Inc. | Non-orbiting tomographic imaging system |
KR100284306B1 (ko) | 1998-10-14 | 2001-03-02 | 김영환 | 이미지 센서의 화질 개선을 위한 단위 화소 구동 방법 |
JP3457551B2 (ja) * | 1998-11-09 | 2003-10-20 | 株式会社東芝 | 固体撮像装置 |
FR2791469B1 (fr) | 1999-03-23 | 2001-04-13 | Commissariat Energie Atomique | Dispositif d'imagerie de rayonnement x et procede de realisation d'un tel dispositif |
US6727521B2 (en) | 2000-09-25 | 2004-04-27 | Foveon, Inc. | Vertical color filter detector group and array |
US6359293B1 (en) * | 1999-08-17 | 2002-03-19 | Agere Systems Guardian Corp. | Integrated optoelectronic device with an avalanche photodetector and method of making the same using commercial CMOS processes |
JP3900233B2 (ja) * | 1999-09-06 | 2007-04-04 | シャープ株式会社 | 受光素子および回路内蔵型受光素子 |
WO2001067518A1 (en) | 2000-03-09 | 2001-09-13 | Koninklijke Philips Electronics N.V. | Solid state imaging sensor in a submicron technology and method of manufacturing and use of a solid state imaging sensor |
JP3951590B2 (ja) * | 2000-10-27 | 2007-08-01 | 株式会社日立製作所 | 荷電粒子線装置 |
US6580106B2 (en) * | 2001-01-12 | 2003-06-17 | Isetex. Inc | CMOS image sensor with complete pixel reset without kTC noise generation |
US6713796B1 (en) * | 2001-01-19 | 2004-03-30 | Dalsa, Inc. | Isolated photodiode |
US6608337B2 (en) | 2001-04-12 | 2003-08-19 | Ise Tex, Inc | Image sensor with an enhanced near infra-red spectral response and method of making |
JP4489319B2 (ja) * | 2001-04-26 | 2010-06-23 | 富士通マイクロエレクトロニクス株式会社 | 固体撮像装置 |
EP1265291A1 (fr) | 2001-06-08 | 2002-12-11 | EM Microelectronic-Marin SA | Capteur d'image CMOS et procédé permettant d'opérer un capteur d'image CMOS avec une dynamique accrue |
US6762441B1 (en) * | 2001-10-15 | 2004-07-13 | Ess Technology, Inc. | Imager cell with pinned transfer gate |
US6545303B1 (en) * | 2001-11-06 | 2003-04-08 | Fillfactory | Method to increase conversion gain of an active pixel, and corresponding active pixel |
DE10156275B4 (de) | 2001-11-16 | 2006-08-03 | Leo Elektronenmikroskopie Gmbh | Detektoranordnung und Detektionsverfahren |
JP2003224253A (ja) * | 2002-01-31 | 2003-08-08 | Sanyo Electric Co Ltd | 光半導体集積回路装置およびその製造方法 |
EP1391932A1 (en) | 2002-08-22 | 2004-02-25 | STMicroelectronics Limited | Solid state image sensor |
EP1432008B1 (en) * | 2002-12-17 | 2010-05-05 | ICT, Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik Mbh | Multi-axis compound lens, beam system making use of the compound lens, and method using the compound lens |
US7262411B2 (en) | 2004-12-08 | 2007-08-28 | The Regents Of The University Of California | Direct collection transmission electron microscopy |
-
2004
- 2004-05-07 EP EP04731669.0A patent/EP1620895B1/en not_active Expired - Lifetime
- 2004-05-07 US US10/556,028 patent/US7944012B2/en not_active Expired - Lifetime
- 2004-05-07 JP JP2006506237A patent/JP4824542B2/ja not_active Expired - Lifetime
- 2004-05-07 WO PCT/GB2004/002014 patent/WO2004099740A2/en active Application Filing
-
2010
- 2010-09-29 JP JP2010218034A patent/JP4824826B2/ja not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63292670A (ja) * | 1987-05-26 | 1988-11-29 | Fuji Photo Film Co Ltd | 固体撮像素子 |
JPH0374874A (ja) * | 1989-08-16 | 1991-03-29 | Sony Corp | 固体撮像装置 |
JPH03191570A (ja) * | 1989-12-20 | 1991-08-21 | Nec Corp | 固体撮像素子 |
JPH06140502A (ja) * | 1992-10-26 | 1994-05-20 | Nec Corp | 半導体装置の製造方法 |
JPH10284748A (ja) * | 1997-02-10 | 1998-10-23 | S I I R D Center:Kk | 半導体放射線検出装置の製造方法 |
JPH1131839A (ja) * | 1997-02-10 | 1999-02-02 | Interuniv Micro Electron Centrum Vzw | 電磁放射検出器、該検出器を用いた高感度ピクセル構造、及び該検出器の製造方法 |
JP2002203954A (ja) * | 2000-10-31 | 2002-07-19 | Sharp Corp | 回路内蔵受光素子 |
Cited By (6)
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---|---|---|---|---|
JP2020535586A (ja) * | 2017-09-29 | 2020-12-03 | エーエスエムエル ネザーランズ ビー.ブイ. | 荷電粒子のためのマルチセル検出器 |
US11222766B2 (en) | 2017-09-29 | 2022-01-11 | Asml Netherlands B.V. | Multi-cell detector for charged particles |
KR20220093266A (ko) * | 2017-09-29 | 2022-07-05 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자에 대한 다중 셀 검출기 |
JP7179839B2 (ja) | 2017-09-29 | 2022-11-29 | エーエスエムエル ネザーランズ ビー.ブイ. | 荷電粒子のためのマルチセル検出器 |
US11784024B2 (en) | 2017-09-29 | 2023-10-10 | Asml Netherlands B.V. | Multi-cell detector for charged particles |
KR102670396B1 (ko) * | 2017-09-29 | 2024-05-30 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자에 대한 다중 셀 검출기 |
Also Published As
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EP1620895A2 (en) | 2006-02-01 |
JP4824542B2 (ja) | 2011-11-30 |
WO2004099740A3 (en) | 2005-05-12 |
US7944012B2 (en) | 2011-05-17 |
US20060278943A1 (en) | 2006-12-14 |
JP4824826B2 (ja) | 2011-11-30 |
EP1620895B1 (en) | 2016-03-02 |
WO2004099740A2 (en) | 2004-11-18 |
JP2007527500A (ja) | 2007-09-27 |
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