JP2011014195A5 - - Google Patents

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Publication number
JP2011014195A5
JP2011014195A5 JP2009157560A JP2009157560A JP2011014195A5 JP 2011014195 A5 JP2011014195 A5 JP 2011014195A5 JP 2009157560 A JP2009157560 A JP 2009157560A JP 2009157560 A JP2009157560 A JP 2009157560A JP 2011014195 A5 JP2011014195 A5 JP 2011014195A5
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JP
Japan
Prior art keywords
data
bit
memory cells
integer
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009157560A
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English (en)
Japanese (ja)
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JP2011014195A (ja
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Publication date
Application filed filed Critical
Priority to JP2009157560A priority Critical patent/JP2011014195A/ja
Priority claimed from JP2009157560A external-priority patent/JP2011014195A/ja
Priority to US12/828,658 priority patent/US8331146B2/en
Publication of JP2011014195A publication Critical patent/JP2011014195A/ja
Publication of JP2011014195A5 publication Critical patent/JP2011014195A5/ja
Pending legal-status Critical Current

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JP2009157560A 2009-07-02 2009-07-02 フラッシュメモリ Pending JP2011014195A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009157560A JP2011014195A (ja) 2009-07-02 2009-07-02 フラッシュメモリ
US12/828,658 US8331146B2 (en) 2009-07-02 2010-07-01 Flash memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009157560A JP2011014195A (ja) 2009-07-02 2009-07-02 フラッシュメモリ

Publications (2)

Publication Number Publication Date
JP2011014195A JP2011014195A (ja) 2011-01-20
JP2011014195A5 true JP2011014195A5 (https=) 2012-07-26

Family

ID=43412574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009157560A Pending JP2011014195A (ja) 2009-07-02 2009-07-02 フラッシュメモリ

Country Status (2)

Country Link
US (1) US8331146B2 (https=)
JP (1) JP2011014195A (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8041879B2 (en) * 2005-02-18 2011-10-18 Sandisk Il Ltd Flash memory backup system and method
US8788743B2 (en) * 2012-04-11 2014-07-22 Micron Technology, Inc. Mapping between program states and data patterns
TW201621670A (zh) 2014-09-06 2016-06-16 Neo半導體股份有限公司 非揮發性記憶體之多頁編程寫入方法與裝置
US10720215B2 (en) 2014-09-06 2020-07-21 Fu-Chang Hsu Methods and apparatus for writing nonvolatile 3D NAND flash memory using multiple-page programming
US9761310B2 (en) 2014-09-06 2017-09-12 NEO Semiconductor, Inc. Method and apparatus for storing information using a memory able to perform both NVM and DRAM functions
US9703719B2 (en) 2015-05-08 2017-07-11 Sandisk Technologies Llc Fast read for non-volatile storage
JP6359491B2 (ja) * 2015-06-12 2018-07-18 東芝メモリ株式会社 半導体記憶装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3113520B2 (ja) * 1994-10-26 2000-12-04 シャープ株式会社 不揮発性半導体記憶装置
US6353554B1 (en) * 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
JPH0991973A (ja) * 1995-09-28 1997-04-04 Sanyo Electric Co Ltd 不揮発性多値メモリ装置
US5959883A (en) * 1998-01-09 1999-09-28 Information Storage Devices, Inc. Recording and playback integrated system for analog non-volatile flash memory
JP3629144B2 (ja) * 1998-06-01 2005-03-16 株式会社東芝 不揮発性半導体記憶装置
US5930172A (en) * 1998-06-23 1999-07-27 Advanced Micro Devices, Inc. Page buffer for a multi-level flash memory with a limited number of latches per memory cell
JP3936908B2 (ja) 2002-12-24 2007-06-27 株式会社日立ハイテクノロジーズ 質量分析装置及び質量分析方法
JP3920768B2 (ja) 2002-12-26 2007-05-30 株式会社東芝 不揮発性半導体メモリ
KR101092012B1 (ko) * 2004-07-30 2011-12-09 스펜션 저팬 리미티드 반도체 장치 및 써넣기 방법
JP2009054246A (ja) * 2007-08-28 2009-03-12 Toshiba Corp 半導体記憶装置
JP2010061723A (ja) * 2008-09-02 2010-03-18 Toppan Printing Co Ltd 半導体メモリー装置
US7852671B2 (en) * 2008-10-30 2010-12-14 Micron Technology, Inc. Data path for multi-level cell memory, methods for storing and methods for utilizing a memory array

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