JP2011009737A - 研磨パッド及び半導体ウェーハを研磨する方法 - Google Patents
研磨パッド及び半導体ウェーハを研磨する方法 Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 151
- 238000000034 method Methods 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 239000006061 abrasive grain Substances 0.000 claims abstract description 22
- 239000011343 solid material Substances 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 claims description 73
- 239000010410 layer Substances 0.000 claims description 38
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- 239000002245 particle Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 239000002002 slurry Substances 0.000 claims description 16
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 16
- 238000007517 polishing process Methods 0.000 claims description 13
- 239000000243 solution Substances 0.000 claims description 10
- 239000003082 abrasive agent Substances 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 9
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 8
- 239000000654 additive Substances 0.000 claims description 6
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims description 5
- 239000004033 plastic Substances 0.000 claims description 5
- 229920003023 plastic Polymers 0.000 claims description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229920000515 polycarbonate Polymers 0.000 claims description 4
- 239000004417 polycarbonate Substances 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- 229920005830 Polyurethane Foam Polymers 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000004745 nonwoven fabric Substances 0.000 claims description 3
- 229920000728 polyester Polymers 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 claims 1
- 239000011496 polyurethane foam Substances 0.000 claims 1
- 230000009467 reduction Effects 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000004814 polyurethane Substances 0.000 description 4
- 229920002635 polyurethane Polymers 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000007717 exclusion Effects 0.000 description 3
- 239000006260 foam Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 2
- 239000003139 biocide Substances 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 238000010668 complexation reaction Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- -1 for example Polymers 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 238000007494 plate polishing Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000003755 preservative agent Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 239000000080 wetting agent Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010327 methods by industry Methods 0.000 description 1
- 230000008450 motivation Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
- B24D13/14—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by the front face
- B24D13/147—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor acting by the front face comprising assemblies of felted or spongy material; comprising pads surrounded by a flexible material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
【解決手段】第1の工程において半導体ウェーハの裏面を0.1〜1.0μmの粒径の固定砥粒を有する研磨パッドによって、及び固体材料を含まず、少なくとも11.8のpH値を有する研磨剤の供給下で研磨し、且つ第2の工程において該半導体ウェーハの前面を研磨し、その際、11.8未満のpH値を有する研磨剤を供給する、半導体ウェーハを研磨する方法によって解決される。
【選択図】なし
Description
Claims (23)
- 半導体ウェーハを研磨する方法であって、その際、第1の工程において半導体ウェーハの裏面を0.1〜1.0μmの粒径の固定砥粒を有する研磨パッドによって、及び固体材料を含まず、少なくとも11.8のpH値を有する研磨剤の供給下で研磨し、且つ第2の工程において該半導体ウェーハの前面を研磨し、その際、11.8未満のpH値を有する研磨剤を供給する、半導体ウェーハを研磨する方法。
- 第1の工程における前記研磨剤が、炭酸ナトリウム(Na2CO3)、炭酸カリウム(K2CO3)、水酸化ナトリウム(NaOH)、水酸化カリウム(KOH)、水酸化アンモニウム(NH4OH)、テトラメチルアンモニウムヒドロキシド(TMAH)の化合物の水溶液又はこれらの任意の所望の混合物である、請求項1記載の方法。
- 前記研磨剤溶液のpH値が11.8〜12.5であり、且つ前記研磨剤溶液中の前記化合物の割合が0.01〜10質量%である、請求項2記載の方法。
- 第2の工程における前記研磨剤が、研磨材料を含有する研磨剤スラリーであり、且つ該研磨剤スラリー中の研磨材料の割合が0.25〜20質量%である、請求項1から3までのいずれか1項記載の方法。
- 前記研磨剤スラリー中の砥粒の割合が0.25〜1質量%である、請求項4記載の方法。
- 前記砥粒の平均粒径が5〜300nmである、請求項5記載の方法。
- 前記砥粒の平均粒径が5〜50nmである、請求項6記載の方法。
- 前記研磨剤スラリー中の研磨物質が、アルミニウム、セリウム又はシリコンの元素の1つ以上の酸化物を有する、請求項4記載の方法。
- 前記研磨剤スラリーが、コロイド分散性シリカを含有する、請求項8記載の方法。
- 前記研磨剤スラリーのpH値が10〜11.5の範囲内にある、請求項9記載の方法。
- 前記研磨剤スラリーのpH値を、炭酸ナトリウム(Na2CO3)、炭酸カリウム(K2CO3)、水酸化ナトリウム(NaOH)、水酸化カリウム(KOH)、水酸化アンモニウム(NH4OH)、テトラメチルアンモニウムヒドロキシド(TMAH)又はこれらの任意の所望の混合物から選択される添加剤によって調節する、請求項10記載の方法。
- 第1の工程において使用される研磨パッドが、セリウム、アルミニウム、ケイ素又はジルコニウムの粒子又は硬質材料、例えば炭化ケイ素、窒化ホウ素又はダイヤモンドの粒子から選択される研磨材料を含有する、請求項1から11までのいずれか1項記載の方法。
- FAP研磨パッド中に含有される砥粒の平均粒径が0.1〜0.6μmである、請求項12記載の方法。
- FAP研磨パッド中に含有される砥粒の平均粒径が0.1〜0.25μmである、請求項13記載の方法。
- 第2工程においても同様に、砥粒を含有する前記研磨パッドを使用する、請求項12から14までのいずれか1項記載の方法。
- 砥粒を含有する研磨パッドが多層であり、且つ研磨性粒子からなる微細反復構造を有する層以外に柔軟性の不織布層及び剛性プラスチック層を有する、請求項12から15までのいずれか1項記載の方法。
- 前記半導体ウェーハが、300mm以上の直径を有するシリコンウェーハである、請求項1から16までのいずれか1項記載の方法。
- 砥粒を含有する層、剛性プラスチックからなる層及びまた柔軟性の不織布層を有し、その際、前記層は感圧接着剤層によって互いに結合されている、半導体ウェーハを研磨する装置において使用するための研磨パッド。
- 剛性プラスチックからなる層がポリカーボネートを有する、請求項18記載の研磨パッド。
- 前記研磨パッドが、ポリウレタンフォームからなる付加的な層を有する、請求項18又は19記載の研磨パッド。
- 柔軟層がポリエステル繊維を有する、請求項18から20までのいずれか1項記載の研磨パッド。
- 砥粒を含有する層が、セリウム、アルミニウム、ケイ素又はジルコニウムの元素の酸化物の粒子又は硬質材料、例えば炭化ケイ素、窒化ホウ素又はダイヤモンドの粒子を有する、請求項18から21までのいずれか1項記載の研磨パッド。
- 請求項18から22までのいずれか1項記載の砥粒を含有する研磨パッドを使用する半導体ウェーハの研磨。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE102009030297.2 | 2009-06-24 | ||
DE102009030297A DE102009030297B3 (de) | 2009-06-24 | 2009-06-24 | Verfahren zum Polieren einer Halbleiterscheibe |
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JP2011009737A true JP2011009737A (ja) | 2011-01-13 |
JP5581117B2 JP5581117B2 (ja) | 2014-08-27 |
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US (2) | US8444455B2 (ja) |
JP (1) | JP5581117B2 (ja) |
KR (2) | KR101218905B1 (ja) |
CN (1) | CN101927455B (ja) |
DE (1) | DE102009030297B3 (ja) |
SG (1) | SG186658A1 (ja) |
TW (1) | TWI416611B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US9960048B2 (en) | 2013-02-13 | 2018-05-01 | Showa Denko K.K. | Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate |
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DE102009057593A1 (de) | 2009-12-09 | 2011-06-16 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
TWI510328B (zh) * | 2010-05-03 | 2015-12-01 | Iv Technologies Co Ltd | 基底層、包括此基底層的研磨墊及研磨方法 |
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US9960048B2 (en) | 2013-02-13 | 2018-05-01 | Showa Denko K.K. | Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate |
US10453693B2 (en) | 2013-02-13 | 2019-10-22 | Showa Denko K.K. | Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate |
Also Published As
Publication number | Publication date |
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US20130157543A1 (en) | 2013-06-20 |
CN101927455B (zh) | 2013-06-19 |
TW201101386A (en) | 2011-01-01 |
SG186658A1 (en) | 2013-01-30 |
JP5581117B2 (ja) | 2014-08-27 |
KR101218905B1 (ko) | 2013-01-18 |
US8444455B2 (en) | 2013-05-21 |
CN101927455A (zh) | 2010-12-29 |
US20100330882A1 (en) | 2010-12-30 |
DE102009030297B3 (de) | 2011-01-20 |
KR101340246B1 (ko) | 2013-12-10 |
KR20100138738A (ko) | 2010-12-31 |
TWI416611B (zh) | 2013-11-21 |
KR20110112246A (ko) | 2011-10-12 |
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