JP2011009689A - 薄膜トランジスタ及び表示装置 - Google Patents
薄膜トランジスタ及び表示装置 Download PDFInfo
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- JP2011009689A JP2011009689A JP2009280144A JP2009280144A JP2011009689A JP 2011009689 A JP2011009689 A JP 2011009689A JP 2009280144 A JP2009280144 A JP 2009280144A JP 2009280144 A JP2009280144 A JP 2009280144A JP 2011009689 A JP2011009689 A JP 2011009689A
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- film transistor
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Abstract
【解決手段】ゲート電極層と、第1の半導体層と、前記第1の半導体層上に接して設けられた前記第1の半導体層よりもキャリア移動度が低い第2の半導体層と、前記ゲート電極層と前記第1の半導体層との間に接して設けられたゲート絶縁層と、前記第2の半導体層に接して設けられた不純物半導体層と、前記不純物半導体層及び前記第1及び第2の半導体層に一部が接して設けられたソース電極及びドレイン電極層と、を有し、前記第1の半導体層のゲート電極層側は全面が前記ゲート電極層によって覆われており、前記第1の半導体層と前記ソース電極及びドレイン電極層が接する部分のポテンシャル障壁は0.5eV以上である薄膜トランジスタを提供する。
【選択図】図1
Description
本実施の形態では、本発明の一態様である薄膜トランジスタについて図面を参照して説明する。
本実施の形態では、本発明の一形態である、実施の形態1にて説明した薄膜トランジスタを搭載した表示装置または発光装置について、図面を参照して説明する。
本実施の形態では、実施の形態2にて説明した表示装置を搭載した電子機器について図面を参照して説明する。このような電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用のモニタ、電子ペーパー、デジタルカメラ、デジタルビデオカメラなどのカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
102 ゲート電極層
104 ゲート絶縁層
106 第1の半導体層
108 第2の半導体層
110 不純物半導体層
112 ソース電極及びドレイン電極層
114 保護層
116 開口部
118 画素電極層
130 部分
131 部分
132 部分
150 第1の半導体膜
152 第2の半導体膜
154 不純物半導体膜
156 レジストマスク
158 第2の半導体層
160 不純物半導体層
162 積層体
164 導電膜
166 レジストマスク
200 基板
202 ゲート電極層
204 ゲート絶縁層
206 第1の半導体層
208 第2の半導体層
210 不純物半導体層
212 ソース電極及びドレイン電極層
214 保護層
216 開口部
218 画素電極層
230 部分
231 部分
250a 反応室
250b 反応室
250c 反応室
250d 反応室
252 高周波電源
254 整合器
258 ガス供給手段
258a ガス供給手段
258b ガス供給手段
258c ガス供給手段
258d ガス供給手段
258e ガス供給手段
258f ガス供給手段
260 バタフライバルブ
262 コンダクタンスバルブ
264 ターボ分子ポンプ
266 ドライポンプ
268 クライオポンプ
270 ロード/アンロード室
272 共通室
274 ゲートバルブ
276 搬送機構
400 画素部
402 走査線駆動回路
403 信号線駆動回路
404 シフトレジスタ
405 アナログスイッチ
406 シフトレジスタ
407 バッファ
411 基板
412 画素部
413 信号線駆動回路
414 走査線駆動回路
415 シール材
416 基板
417 FPC
418 液晶層
419 薄膜トランジスタ
420 薄膜トランジスタ
421 スペーサ
422 画素電極
423 液晶素子
424 配線
425 配線
426 接続端子
427 対向電極
428 配線
429 異方性導電層
430 発光素子
431 充填材
500 筐体
501 筐体
502 表示部
503 表示部
504 蝶番
505 電源入力端子
506 操作キー
507 スピーカ
511 筐体
512 表示部
521 筐体
522 表示部
523 スタンド
531 筐体
532 表示部
533 操作ボタン
534 外部接続ポート
535 スピーカ
536 マイク
537 操作ボタン
Claims (4)
- ゲート電極層と、
第1の半導体層と、
前記第1の半導体層上に接して設けられた前記第1の半導体層よりもキャリア移動度が低い第2の半導体層と、
前記ゲート電極層と前記第1の半導体層との間に接して設けられたゲート絶縁層と、
前記第2の半導体層に接して設けられた不純物半導体層と、
前記不純物半導体層及び前記第1及び第2の半導体層に一部が接して設けられたソース電極及びドレイン電極層と、を有し、
前記第1の半導体層のゲート電極層側は全面が前記ゲート電極層と重畳し、
前記第1の半導体層と前記ソース電極及びドレイン電極層が接する部分のポテンシャル障壁は0.5eV以上であることを特徴とする薄膜トランジスタ。 - ゲート電極層と、
第1の半導体層と、
前記第1の半導体層上に接して設けられた前記第1の半導体層よりもキャリア移動度が低い第2の半導体層と、
前記ゲート電極層と前記第1の半導体層との間に接して設けられたゲート絶縁層と、
前記第2の半導体層に接して設けられた不純物半導体層と、
前記不純物半導体層及び前記第1及び第2の半導体層に一部が接して設けられたソース電極及びドレイン電極層と、を有し、
前記第1の半導体層のゲート電極層側は全面が前記ゲート電極層と重畳し、
前記ソース電極及びドレイン電極層を形成する材料の仕事関数φと、真空準位と前記第1の半導体層の移動度端の底との差χと、前記第1の半導体層の禁制帯幅Egについて、
Eg+χ−φが0.5eV以上であることを特徴とする薄膜トランジスタ。 - 請求項1または請求項2において、
前記第2の半導体層の禁制帯幅は、前記ソース電極及びドレイン電極層が接する前記第1の半導体層の禁制帯幅よりも大きいことを特徴とする薄膜トランジスタ。 - 請求項1乃至請求項3のいずれか一において、
前記第1の半導体層は結晶性半導体を有し、
前記第2の半導体層は非晶質半導体を有することを特徴とする薄膜トランジスタ。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012191190A (ja) * | 2011-02-21 | 2012-10-04 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法、ならびに電子機器 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100067612A (ko) * | 2008-12-11 | 2010-06-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 및 표시 장치 |
US8735231B2 (en) | 2010-08-26 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of dual-gate thin film transistor |
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CN103985761B (zh) * | 2013-02-07 | 2017-04-12 | 群创光电股份有限公司 | 薄膜晶体管元件与薄膜晶体管显示装置 |
US9507968B2 (en) * | 2013-03-15 | 2016-11-29 | Cirque Corporation | Flying sense electrodes for creating a secure cage for integrated circuits and pathways |
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US10186618B2 (en) * | 2015-03-18 | 2019-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10349167B2 (en) * | 2015-05-18 | 2019-07-09 | Apple Inc. | Audio speaker with back volume containing adsorptive material |
CN106249495B (zh) * | 2016-08-25 | 2019-11-26 | 厦门天马微电子有限公司 | 显示面板及其阵列基板 |
US10224382B2 (en) * | 2017-07-25 | 2019-03-05 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method for manufacturing an OLED display screen integrated with touch function |
JP7037649B2 (ja) * | 2018-06-18 | 2022-03-16 | 日立Astemo株式会社 | 半導体装置 |
US10727284B2 (en) * | 2018-11-15 | 2020-07-28 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Method of fabricating organic light-emitting diode touch display screen |
CN111081753A (zh) * | 2019-12-03 | 2020-04-28 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管及薄膜晶体管的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0555570A (ja) * | 1991-08-29 | 1993-03-05 | Hitachi Ltd | 薄膜半導体装置及びその製造方法 |
JPH05267662A (ja) * | 1992-03-19 | 1993-10-15 | Hitachi Ltd | 相補型薄膜半導体装置およびそれを用いた画像情報処理装置 |
JPH08116060A (ja) * | 1994-10-18 | 1996-05-07 | Furontetsuku:Kk | 電界効果トランジスタ |
Family Cites Families (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56122123A (en) | 1980-03-03 | 1981-09-25 | Shunpei Yamazaki | Semiamorphous semiconductor |
JPS6017962A (ja) * | 1983-07-11 | 1985-01-29 | Canon Inc | 薄膜トランジスタ |
JPS6098680A (ja) | 1983-11-04 | 1985-06-01 | Seiko Instr & Electronics Ltd | 電界効果型薄膜トランジスタ |
JPS6187371A (ja) | 1984-10-05 | 1986-05-02 | Hitachi Ltd | 薄膜半導体装置 |
EP0473988A1 (en) | 1990-08-29 | 1992-03-11 | International Business Machines Corporation | Method of fabricating a thin film transistor having amorphous/polycrystalline semiconductor channel region |
US5849601A (en) * | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
JP2791422B2 (ja) | 1990-12-25 | 1998-08-27 | 株式会社 半導体エネルギー研究所 | 電気光学装置およびその作製方法 |
US7115902B1 (en) * | 1990-11-20 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US7098479B1 (en) * | 1990-12-25 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US7576360B2 (en) * | 1990-12-25 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device which comprises thin film transistors and method for manufacturing the same |
JP3255942B2 (ja) * | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
JPH0563196A (ja) * | 1991-09-04 | 1993-03-12 | Hitachi Ltd | 薄膜半導体装置及びその製造方法並び液晶表示装置 |
JPH06326314A (ja) * | 1993-05-12 | 1994-11-25 | Hitachi Ltd | 薄膜トランジスタおよびその製造方法 |
JP3373620B2 (ja) | 1993-10-21 | 2003-02-04 | 株式会社東芝 | 液晶表示装置 |
JPH08195492A (ja) | 1995-01-13 | 1996-07-30 | Matsushita Electric Ind Co Ltd | 多結晶薄膜の形成方法および薄膜トランジスタの製造方法 |
TW303526B (ja) * | 1994-12-27 | 1997-04-21 | Matsushita Electric Ind Co Ltd | |
JPH1020298A (ja) | 1996-07-03 | 1998-01-23 | Sharp Corp | 液晶表示装置 |
KR100257158B1 (ko) | 1997-06-30 | 2000-05-15 | 김영환 | 박막 트랜지스터 및 그의 제조 방법 |
JPH11223505A (ja) * | 1997-12-03 | 1999-08-17 | Mitsutoyo Corp | 誘導型位置測定装置 |
JP3809733B2 (ja) * | 1998-02-25 | 2006-08-16 | セイコーエプソン株式会社 | 薄膜トランジスタの剥離方法 |
JP2002246605A (ja) | 2001-02-20 | 2002-08-30 | Matsushita Electric Ind Co Ltd | 液晶表示用薄膜トランジスタの製造方法 |
TW577176B (en) * | 2003-03-31 | 2004-02-21 | Ind Tech Res Inst | Structure of thin-film transistor, and the manufacturing method thereof |
JP4748954B2 (ja) | 2003-07-14 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
TWI399580B (zh) * | 2003-07-14 | 2013-06-21 | Semiconductor Energy Lab | 半導體裝置及顯示裝置 |
JP2005167051A (ja) | 2003-12-04 | 2005-06-23 | Sony Corp | 薄膜トランジスタおよび薄膜トランジスタの製造方法 |
TWI234288B (en) * | 2004-07-27 | 2005-06-11 | Au Optronics Corp | Method for fabricating a thin film transistor and related circuits |
EP1624333B1 (en) * | 2004-08-03 | 2017-05-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method thereof, and television set |
JP4577114B2 (ja) | 2005-06-23 | 2010-11-10 | ソニー株式会社 | 薄膜トランジスタの製造方法および表示装置の製造方法 |
JP2007035964A (ja) | 2005-07-27 | 2007-02-08 | Sony Corp | 薄膜トランジスタとその製造方法、及び表示装置 |
DE602007013986D1 (de) * | 2006-10-18 | 2011-06-01 | Semiconductor Energy Lab | ID-Funktransponder |
JP2008124392A (ja) * | 2006-11-15 | 2008-05-29 | Sharp Corp | 半導体装置、その製造方法及び表示装置 |
JP2008218796A (ja) * | 2007-03-06 | 2008-09-18 | Kobe Steel Ltd | 薄膜トランジスタの製造装置及びその製造方法 |
US9176353B2 (en) * | 2007-06-29 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
US8921858B2 (en) * | 2007-06-29 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP2009049384A (ja) * | 2007-07-20 | 2009-03-05 | Semiconductor Energy Lab Co Ltd | 発光装置 |
TWI575293B (zh) * | 2007-07-20 | 2017-03-21 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
US7611930B2 (en) * | 2007-08-17 | 2009-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing display device |
JP5395415B2 (ja) * | 2007-12-03 | 2014-01-22 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
US8591650B2 (en) * | 2007-12-03 | 2013-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming crystalline semiconductor film, method for manufacturing thin film transistor, and method for manufacturing display device |
KR20100067612A (ko) * | 2008-12-11 | 2010-06-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터 및 표시 장치 |
-
2009
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- 2009-12-08 US US12/633,067 patent/US8120030B2/en not_active Expired - Fee Related
- 2009-12-09 TW TW98142073A patent/TWI470807B/zh active
- 2009-12-10 JP JP2009280144A patent/JP5613404B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0555570A (ja) * | 1991-08-29 | 1993-03-05 | Hitachi Ltd | 薄膜半導体装置及びその製造方法 |
JPH05267662A (ja) * | 1992-03-19 | 1993-10-15 | Hitachi Ltd | 相補型薄膜半導体装置およびそれを用いた画像情報処理装置 |
JPH08116060A (ja) * | 1994-10-18 | 1996-05-07 | Furontetsuku:Kk | 電界効果トランジスタ |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012191190A (ja) * | 2011-02-21 | 2012-10-04 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法、ならびに電子機器 |
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