JP2011009579A5 - - Google Patents
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- Publication number
- JP2011009579A5 JP2011009579A5 JP2009152974A JP2009152974A JP2011009579A5 JP 2011009579 A5 JP2011009579 A5 JP 2011009579A5 JP 2009152974 A JP2009152974 A JP 2009152974A JP 2009152974 A JP2009152974 A JP 2009152974A JP 2011009579 A5 JP2011009579 A5 JP 2011009579A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- thin film
- insulating substrate
- semiconductor thin
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 23
- 239000010409 thin film Substances 0.000 claims 23
- 239000004065 semiconductor Substances 0.000 claims 19
- 230000005669 field effect Effects 0.000 claims 14
- 239000010408 film Substances 0.000 claims 10
- 239000012535 impurity Substances 0.000 claims 3
- 238000005513 bias potential Methods 0.000 claims 2
- 230000002457 bidirectional effect Effects 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 229910021332 silicide Inorganic materials 0.000 claims 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009152974A JP2011009579A (ja) | 2009-06-26 | 2009-06-26 | 絶縁性基板上の電界効果トランジスタおよびその集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009152974A JP2011009579A (ja) | 2009-06-26 | 2009-06-26 | 絶縁性基板上の電界効果トランジスタおよびその集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011009579A JP2011009579A (ja) | 2011-01-13 |
| JP2011009579A5 true JP2011009579A5 (enExample) | 2012-05-24 |
Family
ID=43565873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009152974A Pending JP2011009579A (ja) | 2009-06-26 | 2009-06-26 | 絶縁性基板上の電界効果トランジスタおよびその集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2011009579A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023224670A1 (en) * | 2022-05-18 | 2023-11-23 | Siemens Industry Software Inc. | Path-based layer stack connectivity check for plasma induced damage avoidance |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3364559B2 (ja) * | 1995-10-11 | 2003-01-08 | 三菱電機株式会社 | 半導体装置 |
| JP3216591B2 (ja) * | 1997-10-29 | 2001-10-09 | 日本電気株式会社 | 電界効果型トランジスタ |
| JP2000332250A (ja) * | 1999-05-18 | 2000-11-30 | Sony Corp | 半導体装置およびその製造方法 |
| JP5001494B2 (ja) * | 2001-08-28 | 2012-08-15 | セイコーインスツル株式会社 | 絶縁性基板上に形成された電界効果トランジスタ |
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2009
- 2009-06-26 JP JP2009152974A patent/JP2011009579A/ja active Pending