JP2011009579A - 絶縁性基板上の電界効果トランジスタおよびその集積回路 - Google Patents

絶縁性基板上の電界効果トランジスタおよびその集積回路 Download PDF

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Publication number
JP2011009579A
JP2011009579A JP2009152974A JP2009152974A JP2011009579A JP 2011009579 A JP2011009579 A JP 2011009579A JP 2009152974 A JP2009152974 A JP 2009152974A JP 2009152974 A JP2009152974 A JP 2009152974A JP 2011009579 A JP2011009579 A JP 2011009579A
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Japan
Prior art keywords
region
thin film
insulating substrate
gate
semiconductor thin
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JP2009152974A
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Japanese (ja)
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JP2011009579A5 (enExample
Inventor
Takashi Hasegawa
尚 長谷川
Hiroaki Takasu
博昭 鷹巣
Jun Osanai
潤 小山内
Yutaka Hayashi
豊 林
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Seiko Instruments Inc
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Seiko Instruments Inc
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Priority to JP2009152974A priority Critical patent/JP2011009579A/ja
Publication of JP2011009579A publication Critical patent/JP2011009579A/ja
Publication of JP2011009579A5 publication Critical patent/JP2011009579A5/ja
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2009152974A 2009-06-26 2009-06-26 絶縁性基板上の電界効果トランジスタおよびその集積回路 Pending JP2011009579A (ja)

Priority Applications (1)

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JP2009152974A JP2011009579A (ja) 2009-06-26 2009-06-26 絶縁性基板上の電界効果トランジスタおよびその集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009152974A JP2011009579A (ja) 2009-06-26 2009-06-26 絶縁性基板上の電界効果トランジスタおよびその集積回路

Publications (2)

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JP2011009579A true JP2011009579A (ja) 2011-01-13
JP2011009579A5 JP2011009579A5 (enExample) 2012-05-24

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JP2009152974A Pending JP2011009579A (ja) 2009-06-26 2009-06-26 絶縁性基板上の電界効果トランジスタおよびその集積回路

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119213438A (zh) * 2022-05-18 2024-12-27 西门子工业软件有限公司 用于等离子体诱导损伤避免的基于路径的层堆叠连接检查

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09107103A (ja) * 1995-10-11 1997-04-22 Mitsubishi Electric Corp 半導体装置
JPH11135795A (ja) * 1997-10-29 1999-05-21 Nec Corp 電界効果型トランジスタ
JP2000332250A (ja) * 1999-05-18 2000-11-30 Sony Corp 半導体装置およびその製造方法
JP2003152184A (ja) * 2001-08-28 2003-05-23 Seiko Instruments Inc 絶縁性基板上の電界効果トランジスタおよびその集積回路

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09107103A (ja) * 1995-10-11 1997-04-22 Mitsubishi Electric Corp 半導体装置
JPH11135795A (ja) * 1997-10-29 1999-05-21 Nec Corp 電界効果型トランジスタ
JP2000332250A (ja) * 1999-05-18 2000-11-30 Sony Corp 半導体装置およびその製造方法
JP2003152184A (ja) * 2001-08-28 2003-05-23 Seiko Instruments Inc 絶縁性基板上の電界効果トランジスタおよびその集積回路

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119213438A (zh) * 2022-05-18 2024-12-27 西门子工业软件有限公司 用于等离子体诱导损伤避免的基于路径的层堆叠连接检查
CN119213438B (zh) * 2022-05-18 2025-09-30 西门子工业软件有限公司 用于等离子体诱导损伤避免的基于路径的层堆叠连接检查
US12572701B2 (en) 2022-05-18 2026-03-10 Siemens Industry Software Inc. Path-based layer stack connectivity check for plasma induced damage avoidance

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