JP2010541215A5 - - Google Patents

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Publication number
JP2010541215A5
JP2010541215A5 JP2010526146A JP2010526146A JP2010541215A5 JP 2010541215 A5 JP2010541215 A5 JP 2010541215A5 JP 2010526146 A JP2010526146 A JP 2010526146A JP 2010526146 A JP2010526146 A JP 2010526146A JP 2010541215 A5 JP2010541215 A5 JP 2010541215A5
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JP
Japan
Prior art keywords
radiation
semiconductor chip
emitting semiconductor
chip according
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010526146A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010541215A (ja
Filing date
Publication date
Priority claimed from DE102007060204.0A external-priority patent/DE102007060204B4/de
Application filed filed Critical
Publication of JP2010541215A publication Critical patent/JP2010541215A/ja
Publication of JP2010541215A5 publication Critical patent/JP2010541215A5/ja
Pending legal-status Critical Current

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JP2010526146A 2007-09-28 2008-08-27 放射放出半導体チップ Pending JP2010541215A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007046497 2007-09-28
DE102007060204.0A DE102007060204B4 (de) 2007-09-28 2007-12-14 Strahlung emittierender Halbleiterchip
PCT/DE2008/001423 WO2009039811A2 (de) 2007-09-28 2008-08-27 Strahlung emittierender halbleiterchip

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013269316A Division JP2014057113A (ja) 2007-09-28 2013-12-26 放射放出半導体チップ

Publications (2)

Publication Number Publication Date
JP2010541215A JP2010541215A (ja) 2010-12-24
JP2010541215A5 true JP2010541215A5 (enExample) 2013-06-20

Family

ID=40435571

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010526146A Pending JP2010541215A (ja) 2007-09-28 2008-08-27 放射放出半導体チップ
JP2013269316A Pending JP2014057113A (ja) 2007-09-28 2013-12-26 放射放出半導体チップ

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2013269316A Pending JP2014057113A (ja) 2007-09-28 2013-12-26 放射放出半導体チップ

Country Status (9)

Country Link
US (1) US8340146B2 (enExample)
EP (2) EP2193556B1 (enExample)
JP (2) JP2010541215A (enExample)
KR (2) KR101718271B1 (enExample)
CN (1) CN101809772B (enExample)
DE (2) DE102007060204B4 (enExample)
PL (1) PL2193556T3 (enExample)
TW (1) TWI385827B (enExample)
WO (1) WO2009039811A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011100175B4 (de) 2011-05-02 2021-12-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Stegwellenleiterstruktur und einer Modenfilterstruktur
DE102012103549B4 (de) 2012-04-23 2020-06-18 Osram Opto Semiconductors Gmbh Halbleiterlaserlichtquelle mit einem kantenemittierenden Halbleiterkörper und Licht streuenden Teilbereich
DE102013216527A1 (de) * 2013-08-21 2015-02-26 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zum Herstellen eines Laserbauelements
KR20160034534A (ko) 2014-09-19 2016-03-30 삼성전자주식회사 반도체 발광 소자
KR101689468B1 (ko) * 2015-05-19 2016-12-26 주식회사 솔탑 라이다식 운고계 장치 및 라이다식 운고계 장치 구현 방법
DE102016106495A1 (de) * 2016-04-08 2017-10-12 Osram Opto Semiconductors Gmbh Halbleiterlaser
JP7222217B2 (ja) 2018-10-30 2023-02-15 Tdk株式会社 積層コイル部品
CN115775859A (zh) * 2022-11-09 2023-03-10 华灿光电（浙江）有限公司 改善光串扰的发光二极管及其制备方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61108176A (ja) 1984-11-01 1986-05-26 Fuji Electric Co Ltd 粗面化方法
JP2755357B2 (ja) * 1991-08-30 1998-05-20 シャープ株式会社 半導体レーザ素子
JP3448441B2 (ja) 1996-11-29 2003-09-22 三洋電機株式会社 発光装置
EP1012933B1 (en) 1997-01-27 2004-09-22 International Business Machines Corporation Laser device
JP5019664B2 (ja) * 1998-07-28 2012-09-05 アイメック 高効率で光を発するデバイスおよびそのようなデバイスの製造方法
JP3633447B2 (ja) * 1999-09-29 2005-03-30 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
US6515305B2 (en) * 2000-09-18 2003-02-04 Regents Of The University Of Minnesota Vertical cavity surface emitting laser with single mode confinement
JP4117778B2 (ja) * 2002-09-27 2008-07-16 日本電信電話株式会社 半導体光素子
EP1492209B1 (en) * 2003-06-27 2008-01-09 Nichia Corporation Nitride semiconductor laser device having current blocking layer and method of manufacturing the same
TWI330413B (en) * 2005-01-25 2010-09-11 Epistar Corp A light-emitting device
JP4830315B2 (ja) 2004-03-05 2011-12-07 日亜化学工業株式会社 半導体レーザ素子
KR100674836B1 (ko) 2005-02-28 2007-01-26 삼성전기주식회사 고출력 단일모드 반도체 레이저소자 및 그 제조방법
US20060204865A1 (en) * 2005-03-08 2006-09-14 Luminus Devices, Inc. Patterned light-emitting devices
JP4852972B2 (ja) * 2005-10-26 2012-01-11 パナソニック電工株式会社 光学部品の製造方法及び発光素子
JP2007134445A (ja) * 2005-11-09 2007-05-31 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP4959203B2 (ja) * 2006-02-17 2012-06-20 昭和電工株式会社 発光素子及びその製造方法、並びにランプ
DE102006017573A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung

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