JP2010541185A5 - - Google Patents

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Publication number
JP2010541185A5
JP2010541185A5 JP2010528148A JP2010528148A JP2010541185A5 JP 2010541185 A5 JP2010541185 A5 JP 2010541185A5 JP 2010528148 A JP2010528148 A JP 2010528148A JP 2010528148 A JP2010528148 A JP 2010528148A JP 2010541185 A5 JP2010541185 A5 JP 2010541185A5
Authority
JP
Japan
Prior art keywords
disposed
cathode
insulating layer
substrate
field emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010528148A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010541185A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/078651 external-priority patent/WO2009046238A1/en
Publication of JP2010541185A publication Critical patent/JP2010541185A/ja
Publication of JP2010541185A5 publication Critical patent/JP2010541185A5/ja
Pending legal-status Critical Current

Links

JP2010528148A 2007-10-05 2008-10-03 電荷散逸層を備えたアンダー・ゲート電界放出トライオード Pending JP2010541185A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97768307P 2007-10-05 2007-10-05
PCT/US2008/078651 WO2009046238A1 (en) 2007-10-05 2008-10-03 Under-gate field emission triode with charge dissipation layer

Publications (2)

Publication Number Publication Date
JP2010541185A JP2010541185A (ja) 2010-12-24
JP2010541185A5 true JP2010541185A5 (enExample) 2011-11-17

Family

ID=40243676

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010528148A Pending JP2010541185A (ja) 2007-10-05 2008-10-03 電荷散逸層を備えたアンダー・ゲート電界放出トライオード

Country Status (7)

Country Link
US (1) US20100264805A1 (enExample)
EP (1) EP2206135A1 (enExample)
JP (1) JP2010541185A (enExample)
KR (1) KR20100086468A (enExample)
CN (1) CN102017051A (enExample)
TW (1) TW200939280A (enExample)
WO (1) WO2009046238A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102148119B (zh) * 2010-11-27 2012-12-05 福州大学 发射单元双栅单阴式无介质三极fed装置及其驱动方法
CN102097272B (zh) * 2011-01-10 2012-06-27 福州大学 阳栅同基板的三极结构场致发射显示器
KR101545848B1 (ko) 2012-04-09 2015-08-21 (주)바이오니아 핵산중합효소로 핵산을 검출하는데 사용되는 고민감도 핵산준비방법
JP6260326B2 (ja) * 2014-02-14 2018-01-17 凸版印刷株式会社 薄膜トランジスタ装置及びその製造方法
JP7445550B2 (ja) * 2020-07-15 2024-03-07 シャープ株式会社 電子放出素子

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5760535A (en) 1996-10-31 1998-06-02 Motorola, Inc. Field emission device
US6566794B1 (en) * 1998-07-22 2003-05-20 Canon Kabushiki Kaisha Image forming apparatus having a spacer covered by heat resistant organic polymer film
JP2000090860A (ja) * 1998-09-10 2000-03-31 Canon Inc 画像形成装置
KR100477739B1 (ko) * 1999-12-30 2005-03-18 삼성에스디아이 주식회사 전계 방출 소자 및 그 구동 방법
JP3658342B2 (ja) * 2000-05-30 2005-06-08 キヤノン株式会社 電子放出素子、電子源及び画像形成装置、並びにテレビジョン放送表示装置
US7449081B2 (en) 2000-06-21 2008-11-11 E. I. Du Pont De Nemours And Company Process for improving the emission of electron field emitters
JP2002033058A (ja) * 2000-07-14 2002-01-31 Sony Corp 電界放出型表示装置用の前面板
US6812636B2 (en) * 2001-03-30 2004-11-02 Candescent Technologies Corporation Light-emitting device having light-emissive particles partially coated with light-reflective or/and getter material
CN100379704C (zh) * 2001-05-16 2008-04-09 纳幕尔杜邦公司 电阻减小的介电组合物
JP5011619B2 (ja) * 2001-08-01 2012-08-29 日本電気株式会社 電子放出膜および電界電子放出装置
CN100407362C (zh) * 2002-04-12 2008-07-30 三星Sdi株式会社 场发射显示器
AU2003244079A1 (en) * 2002-06-27 2004-01-19 Nec Corporation Cold cathode structure, electron emission device, and electron emission type display device
WO2004055854A1 (en) * 2002-12-17 2004-07-01 Koninklijke Philips Electronics N.V. Display device
KR20050051367A (ko) * 2003-11-27 2005-06-01 삼성에스디아이 주식회사 그리드 기판을 구비한 전계 방출 표시장치
JP2005235748A (ja) * 2004-02-17 2005-09-02 Lg Electronics Inc 炭素ナノチューブ電界放出素子及びその駆動方法
KR20050115057A (ko) * 2004-06-03 2005-12-07 삼성에스디아이 주식회사 전계 방출 소자용 장수명 이미터 및 그 제조 방법
US7755267B2 (en) * 2004-06-03 2010-07-13 Canon Kabushiki Kaisha Electron emitting device having electroconductive thin film and high resistivity sheet
JP4886184B2 (ja) * 2004-10-26 2012-02-29 キヤノン株式会社 画像表示装置
KR20060095331A (ko) * 2005-02-28 2006-08-31 삼성에스디아이 주식회사 전자 방출 소자

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