JP2010538497A - 不揮発性半導体メモリ・デバイスにおける欠陥を修復するための方法および装置 - Google Patents

不揮発性半導体メモリ・デバイスにおける欠陥を修復するための方法および装置 Download PDF

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JP2010538497A
JP2010538497A JP2010524138A JP2010524138A JP2010538497A JP 2010538497 A JP2010538497 A JP 2010538497A JP 2010524138 A JP2010524138 A JP 2010524138A JP 2010524138 A JP2010524138 A JP 2010524138A JP 2010538497 A JP2010538497 A JP 2010538497A
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annealing
heating element
memory device
self
semiconductor device
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JP2010538497A5 (OSRAM
Inventor
ブローナー，ゲアリー，ビー．
リ，ミン
マレン，ドナルド，アール．
ウェア，フレデリック
ドナリー，ケビン，エス．
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ラムバス・インコーポレーテッド
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/345—Arrangements for heating
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    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2010524138A 2007-09-05 2008-09-04 不揮発性半導体メモリ・デバイスにおける欠陥を修復するための方法および装置 Pending JP2010538497A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97022307P 2007-09-05 2007-09-05
PCT/US2008/075261 WO2009032928A2 (en) 2007-09-05 2008-09-04 Method and apparatus to repair defects in nonvolatile semiconductor memory devices

Publications (2)

Publication Number Publication Date
JP2010538497A true JP2010538497A (ja) 2010-12-09
JP2010538497A5 JP2010538497A5 (OSRAM) 2011-10-20

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JP2010524138A Pending JP2010538497A (ja) 2007-09-05 2008-09-04 不揮発性半導体メモリ・デバイスにおける欠陥を修復するための方法および装置

Country Status (4)

Country Link
US (2) US8193573B2 (OSRAM)
EP (1) EP2191473A2 (OSRAM)
JP (1) JP2010538497A (OSRAM)
WO (1) WO2009032928A2 (OSRAM)

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JP2012142576A (ja) * 2010-12-28 2012-07-26 Samsung Electronics Co Ltd 貫通電極を有する積層構造の半導体装置、半導体メモリ装置、半導体メモリ・システム及びその動作方法
WO2015008860A1 (ja) * 2013-07-19 2015-01-22 日本電信電話株式会社 電気素子のパッケージ
WO2016031117A1 (ja) * 2014-08-29 2016-03-03 日本電信電話株式会社 電気素子のパッケージ
KR101747191B1 (ko) 2011-01-14 2017-06-14 에스케이하이닉스 주식회사 반도체 장치
JP2023067686A (ja) * 2021-10-29 2023-05-16 旺宏電子股▲ふん▼有限公司 ３ｄフラッシュメモリモジュールチップおよびその製造方法

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US8344475B2 (en) 2006-11-29 2013-01-01 Rambus Inc. Integrated circuit heating to effect in-situ annealing
US8193573B2 (en) * 2007-09-05 2012-06-05 Rambus Inc. Repairing defects in a nonvolatile semiconductor memory device utilizing a heating element
KR101413736B1 (ko) * 2007-09-13 2014-07-02 삼성전자주식회사 향상된 신뢰성을 갖는 메모리 시스템 및 그것의웨어-레벨링 기법
KR101624969B1 (ko) * 2009-05-26 2016-05-31 삼성전자주식회사 메모리 시스템 및 그것의 배드 블록 관리 방법
TW201200853A (en) * 2010-06-18 2012-01-01 Ind Tech Res Inst Measuring apparatus
KR101660985B1 (ko) * 2010-07-09 2016-10-10 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
US9014749B2 (en) 2010-08-12 2015-04-21 Qualcomm Incorporated System and method to initiate a housekeeping operation at a mobile device
US8724393B2 (en) 2011-05-02 2014-05-13 Macronix International Co., Ltd. Thermally assisted flash memory with diode strapping
US8488387B2 (en) * 2011-05-02 2013-07-16 Macronix International Co., Ltd. Thermally assisted dielectric charge trapping flash
US8824212B2 (en) 2011-05-02 2014-09-02 Macronix International Co., Ltd. Thermally assisted flash memory with segmented word lines
US8958242B2 (en) 2011-05-05 2015-02-17 Micron Technology, Inc. Thermal treatment of flash memories
TWI508075B (zh) * 2011-06-09 2015-11-11 Macronix Int Co Ltd 熱協助介電電荷捕捉快閃記憶體
US8405214B2 (en) * 2011-08-12 2013-03-26 Nanya Technology Corp. Semiconductor package structure with common gold plated metal conductor on die and substrate
US20130126508A1 (en) * 2011-11-17 2013-05-23 Texas Instruments Incorporated Extending Radiation Tolerance By Localized Temperature Annealing Of Semiconductor Devices
CN109449129A (zh) * 2013-03-01 2019-03-08 日月光半导体制造股份有限公司 半导体封装结构与其制造方法
US9734919B2 (en) 2013-05-23 2017-08-15 Seagate Technology Llc Recovery of interfacial defects in memory cells
US9064824B2 (en) * 2013-11-12 2015-06-23 International Business Machines Corporation In-situ annealing for extending the lifetime of CMOS products
US9348748B2 (en) 2013-12-24 2016-05-24 Macronix International Co., Ltd. Heal leveling
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
KR102142590B1 (ko) 2014-06-16 2020-08-07 삼성전자 주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 동작방법
US9455038B2 (en) 2014-08-20 2016-09-27 Sandisk Technologies Llc Storage module and method for using healing effects of a quarantine process
US9286991B1 (en) * 2015-02-17 2016-03-15 Darryl G. Walker Multi-chip non-volatile semiconductor memory package including heater and sensor elements
EP3059760A1 (de) * 2015-02-18 2016-08-24 Siemens Aktiengesellschaft Elektronische Vorrichtung
US10499461B2 (en) * 2015-12-21 2019-12-03 Intel Corporation Thermal head with a thermal barrier for integrated circuit die processing
US10381100B2 (en) 2016-07-01 2019-08-13 Synopsys, Inc. Enhancing memory yield and performance through utilizing nanowire self-heating
US10467134B2 (en) 2016-08-25 2019-11-05 Sandisk Technologies Llc Dynamic anneal characteristics for annealing non-volatile memory
US9761290B1 (en) 2016-08-25 2017-09-12 Sandisk Technologies Llc Overheat prevention for annealing non-volatile memory
US20180108642A1 (en) * 2016-10-13 2018-04-19 Globalfoundries Inc. Interposer heater for high bandwidth memory applications
US10545805B2 (en) * 2017-03-29 2020-01-28 Macronix International Co., Ltd. Memory system, reading method thereof and writing method thereof
US10692793B2 (en) * 2018-03-02 2020-06-23 Micron Technology, Inc. Electronic device with a package-level thermal regulator mechanism and associated systems, devices, and methods
US10834853B2 (en) 2018-03-02 2020-11-10 Micron Technology, Inc. Electronic device with a card-level thermal regulator mechanism and associated systems, devices, and methods
US10916308B2 (en) * 2019-06-03 2021-02-09 Macronix International Co., Ltd. 3D flash memory module and healing and operating methods of 3D flash memory
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