JP2010537444A - エッチング剤組成物及び金属Ｃｕ／Ｍｏのためのエッチング方法 - Google Patents

エッチング剤組成物及び金属Ｃｕ／Ｍｏのためのエッチング方法 Download PDF

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Publication number
JP2010537444A
JP2010537444A JP2010522406A JP2010522406A JP2010537444A JP 2010537444 A JP2010537444 A JP 2010537444A JP 2010522406 A JP2010522406 A JP 2010522406A JP 2010522406 A JP2010522406 A JP 2010522406A JP 2010537444 A JP2010537444 A JP 2010537444A
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JP
Japan
Prior art keywords
layer
etching
acid
weight
composition
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Pending
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JP2010522406A
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English (en)
Japanese (ja)
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JP2010537444A5 (https=
Inventor
ウェイ リン チェン
スン サイ モー
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BASF SE
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BASF SE
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Priority claimed from TW96137710A external-priority patent/TW200916605A/zh
Priority claimed from CNA2007101673174A external-priority patent/CN101418449A/zh
Application filed by BASF SE filed Critical BASF SE
Publication of JP2010537444A publication Critical patent/JP2010537444A/ja
Publication of JP2010537444A5 publication Critical patent/JP2010537444A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
JP2010522406A 2007-10-08 2008-10-02 エッチング剤組成物及び金属Ｃｕ／Ｍｏのためのエッチング方法 Pending JP2010537444A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
TW96137710A TW200916605A (en) 2007-10-08 2007-10-08 Etchant compositions and etching method for metals Cu/Mo
CNA2007101673174A CN101418449A (zh) 2007-10-22 2007-10-22 用于铜/钼金属的蚀刻液组成物及蚀刻方法
PCT/EP2008/063221 WO2009047203A1 (en) 2007-10-08 2008-10-02 ETCHANT COMPOSITIONS AND ETCHING METHOD FOR METALS Cu/Mo

Publications (2)

Publication Number Publication Date
JP2010537444A true JP2010537444A (ja) 2010-12-02
JP2010537444A5 JP2010537444A5 (https=) 2012-02-02

Family

ID=40219299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010522406A Pending JP2010537444A (ja) 2007-10-08 2008-10-02 エッチング剤組成物及び金属Ｃｕ／Ｍｏのためのエッチング方法

Country Status (4)

Country Link
US (1) US20100301010A1 (https=)
JP (1) JP2010537444A (https=)
KR (1) KR20100064361A (https=)
WO (1) WO2009047203A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013060634A (ja) * 2011-09-14 2013-04-04 Tosoh Corp エッチング液

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102690605B (zh) 2009-02-16 2015-01-21 日立化成株式会社 铜研磨用研磨剂和使用了其的研磨方法
WO2010092865A1 (ja) 2009-02-16 2010-08-19 日立化成工業株式会社 研磨剤及び研磨方法
JP5051323B2 (ja) * 2010-02-15 2012-10-17 三菱瓦斯化学株式会社 銅層及びモリブデン層を含む多層薄膜用エッチング液
KR20120066950A (ko) 2010-12-15 2012-06-25 삼성전자주식회사 식각액, 이를 이용한 표시 장치 및 그 제조 방법
KR20140013310A (ko) 2012-07-23 2014-02-05 삼성디스플레이 주식회사 식각액 조성물, 및 이를 이용한 금속 배선과 박막 트랜지스터 표시판 제조 방법
KR20150124540A (ko) 2014-04-28 2015-11-06 삼성디스플레이 주식회사 식각액 및 이를 이용한 표시 장치의 제조 방법
KR102218353B1 (ko) * 2014-06-26 2021-02-22 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법
KR102209680B1 (ko) * 2014-06-27 2021-01-29 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법
TWI618817B (zh) * 2015-12-29 2018-03-21 Daxin Materials Corporation 蝕刻液組成物及應用其之蝕刻方法
EP3684148B1 (en) * 2017-09-12 2023-11-29 Kabushiki Kaisha Toshiba Method for manufacturing ceramic circuit board
US11492709B2 (en) * 2020-04-14 2022-11-08 Entegris, Inc. Method and composition for etching molybdenum
KR102889639B1 (ko) * 2020-07-01 2025-11-21 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193620A (ja) * 2002-12-12 2004-07-08 Lg Phillips Lcd Co Ltd 銅モリブデン膜で、モリブデンの残渣を除去するエッチング溶液及びそのエッチング方法
WO2006138235A2 (en) * 2005-06-13 2006-12-28 Advanced Technology Materials, Inc. Compositions and methods for selective removal of metal or metal alloy after metal silicide formation
JP2007005790A (ja) * 2005-06-22 2007-01-11 Samsung Electronics Co Ltd エッチング液、これを用いた配線形成方法及び薄膜トランジスタ基板の製造方法
WO2008121952A1 (en) * 2007-03-31 2008-10-09 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101190907B1 (ko) * 2004-12-07 2012-10-12 가오 가부시키가이샤 박리제 조성물
TWI378989B (en) * 2006-09-01 2012-12-11 Taiwan Tft Lcd Ass Etchant for patterning composite layer and method of fabricating thin film transistor using the same
KR101326128B1 (ko) * 2006-09-29 2013-11-06 삼성디스플레이 주식회사 표시 장치용 배선, 식각액, 박막 트랜지스터 표시판 및 그제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004193620A (ja) * 2002-12-12 2004-07-08 Lg Phillips Lcd Co Ltd 銅モリブデン膜で、モリブデンの残渣を除去するエッチング溶液及びそのエッチング方法
WO2006138235A2 (en) * 2005-06-13 2006-12-28 Advanced Technology Materials, Inc. Compositions and methods for selective removal of metal or metal alloy after metal silicide formation
JP2007005790A (ja) * 2005-06-22 2007-01-11 Samsung Electronics Co Ltd エッチング液、これを用いた配線形成方法及び薄膜トランジスタ基板の製造方法
WO2008121952A1 (en) * 2007-03-31 2008-10-09 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013060634A (ja) * 2011-09-14 2013-04-04 Tosoh Corp エッチング液

Also Published As

Publication number Publication date
WO2009047203A1 (en) 2009-04-16
KR20100064361A (ko) 2010-06-14
US20100301010A1 (en) 2010-12-02

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