KR20100064361A - Ｃｕ/Ｍｏ 금속용 에칭 조성물 및 에칭 방법 - Google Patents

Ｃｕ/Ｍｏ 금속용 에칭 조성물 및 에칭 방법 Download PDF

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Publication number
KR20100064361A
KR20100064361A KR1020107004302A KR20107004302A KR20100064361A KR 20100064361 A KR20100064361 A KR 20100064361A KR 1020107004302 A KR1020107004302 A KR 1020107004302A KR 20107004302 A KR20107004302 A KR 20107004302A KR 20100064361 A KR20100064361 A KR 20100064361A
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KR
South Korea
Prior art keywords
weight
layer
etchant composition
composition
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020107004302A
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English (en)
Korean (ko)
Inventor
청 웨이 린
모 흐순 차이
Original Assignee
바스프 에스이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW96137710A external-priority patent/TW200916605A/zh
Priority claimed from CNA2007101673174A external-priority patent/CN101418449A/zh
Application filed by 바스프 에스이 filed Critical 바스프 에스이
Publication of KR20100064361A publication Critical patent/KR20100064361A/ko
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
KR1020107004302A 2007-10-08 2008-10-02 Ｃｕ/Ｍｏ 금속용 에칭 조성물 및 에칭 방법 Withdrawn KR20100064361A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
TW096137710 2007-10-08
TW96137710A TW200916605A (en) 2007-10-08 2007-10-08 Etchant compositions and etching method for metals Cu/Mo
CNA2007101673174A CN101418449A (zh) 2007-10-22 2007-10-22 用于铜/钼金属的蚀刻液组成物及蚀刻方法
CN200710167317.4 2007-10-22

Publications (1)

Publication Number Publication Date
KR20100064361A true KR20100064361A (ko) 2010-06-14

Family

ID=40219299

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107004302A Withdrawn KR20100064361A (ko) 2007-10-08 2008-10-02 Ｃｕ/Ｍｏ 금속용 에칭 조성물 및 에칭 방법

Country Status (4)

Country Link
US (1) US20100301010A1 (https=)
JP (1) JP2010537444A (https=)
KR (1) KR20100064361A (https=)
WO (1) WO2009047203A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8785935B2 (en) 2010-12-15 2014-07-22 Samsung Display Co., Ltd. Etchant, display device and method for manufacturing display device using the same
KR20160001074A (ko) * 2014-06-26 2016-01-06 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법
US9741827B2 (en) 2014-04-28 2017-08-22 Samsung Display Co., Ltd. Etchant and method of manufacturing display device by using the same
KR20220003693A (ko) * 2020-07-01 2022-01-11 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102690605B (zh) 2009-02-16 2015-01-21 日立化成株式会社 铜研磨用研磨剂和使用了其的研磨方法
WO2010092865A1 (ja) 2009-02-16 2010-08-19 日立化成工業株式会社 研磨剤及び研磨方法
JP5051323B2 (ja) * 2010-02-15 2012-10-17 三菱瓦斯化学株式会社 銅層及びモリブデン層を含む多層薄膜用エッチング液
JP2013060634A (ja) * 2011-09-14 2013-04-04 Tosoh Corp エッチング液
KR20140013310A (ko) 2012-07-23 2014-02-05 삼성디스플레이 주식회사 식각액 조성물, 및 이를 이용한 금속 배선과 박막 트랜지스터 표시판 제조 방법
KR102209680B1 (ko) * 2014-06-27 2021-01-29 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정 표시 장치용 어레이 기판의 제조방법
TWI618817B (zh) * 2015-12-29 2018-03-21 Daxin Materials Corporation 蝕刻液組成物及應用其之蝕刻方法
EP3684148B1 (en) * 2017-09-12 2023-11-29 Kabushiki Kaisha Toshiba Method for manufacturing ceramic circuit board
US11492709B2 (en) * 2020-04-14 2022-11-08 Entegris, Inc. Method and composition for etching molybdenum

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505328B1 (ko) * 2002-12-12 2005-07-29 엘지.필립스 엘시디 주식회사 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법
KR101190907B1 (ko) * 2004-12-07 2012-10-12 가오 가부시키가이샤 박리제 조성물
CN101233601A (zh) * 2005-06-13 2008-07-30 高级技术材料公司 在金属硅化物形成后用于选择性除去金属或金属合金的组合物及方法
KR101199533B1 (ko) * 2005-06-22 2012-11-09 삼성디스플레이 주식회사 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법
TWI378989B (en) * 2006-09-01 2012-12-11 Taiwan Tft Lcd Ass Etchant for patterning composite layer and method of fabricating thin film transistor using the same
KR101326128B1 (ko) * 2006-09-29 2013-11-06 삼성디스플레이 주식회사 표시 장치용 배선, 식각액, 박막 트랜지스터 표시판 및 그제조 방법
WO2008121952A1 (en) * 2007-03-31 2008-10-09 Advanced Technology Materials, Inc. Methods for stripping material for wafer reclamation

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8785935B2 (en) 2010-12-15 2014-07-22 Samsung Display Co., Ltd. Etchant, display device and method for manufacturing display device using the same
US9111813B2 (en) 2010-12-15 2015-08-18 Samsung Display Co., Ltd. Etchant, display device and method for manufacturing display device using the same
US9741827B2 (en) 2014-04-28 2017-08-22 Samsung Display Co., Ltd. Etchant and method of manufacturing display device by using the same
KR20160001074A (ko) * 2014-06-26 2016-01-06 동우 화인켐 주식회사 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법
KR20220003693A (ko) * 2020-07-01 2022-01-11 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
US12225782B2 (en) 2020-07-01 2025-02-11 Samsung Display Co., Ltd. Display apparatus and method of manufacturing the same

Also Published As

Publication number Publication date
WO2009047203A1 (en) 2009-04-16
US20100301010A1 (en) 2010-12-02
JP2010537444A (ja) 2010-12-02

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