JP2010536142A - リソグラフィ装置およびデバイス製造方法 - Google Patents

リソグラフィ装置およびデバイス製造方法 Download PDF

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Publication number
JP2010536142A
JP2010536142A JP2010519881A JP2010519881A JP2010536142A JP 2010536142 A JP2010536142 A JP 2010536142A JP 2010519881 A JP2010519881 A JP 2010519881A JP 2010519881 A JP2010519881 A JP 2010519881A JP 2010536142 A JP2010536142 A JP 2010536142A
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JP
Japan
Prior art keywords
radiation
plasma
fuel
substance
radiation source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010519881A
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English (en)
Japanese (ja)
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JP2010536142A5 (https=
Inventor
イヴァノヴ，ブラディミア，ヴィタレヴィッチ
バニエ，バディム，エヴィジェンエビッチ
コシェレヴ，コンスタンティン，ニコラエヴィッチ
クリヴツン，ヴラディミア，ミハイロヴィッチ
Original Assignee
エーエスエムエル ネザーランズ ビー．ブイ．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by エーエスエムエル ネザーランズ ビー．ブイ． filed Critical エーエスエムエル ネザーランズ ビー．ブイ．
Publication of JP2010536142A publication Critical patent/JP2010536142A/ja
Publication of JP2010536142A5 publication Critical patent/JP2010536142A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0027—Arrangements for controlling the supply; Arrangements for measurements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2010519881A 2007-08-06 2008-08-05 リソグラフィ装置およびデバイス製造方法 Pending JP2010536142A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/882,853 US8493548B2 (en) 2007-08-06 2007-08-06 Lithographic apparatus and device manufacturing method
PCT/NL2008/050536 WO2009020390A1 (en) 2007-08-06 2008-08-05 Lithographic apparatus and device manufacturing method

Publications (2)

Publication Number Publication Date
JP2010536142A true JP2010536142A (ja) 2010-11-25
JP2010536142A5 JP2010536142A5 (https=) 2011-09-22

Family

ID=39846624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010519881A Pending JP2010536142A (ja) 2007-08-06 2008-08-05 リソグラフィ装置およびデバイス製造方法

Country Status (8)

Country Link
US (2) US8493548B2 (https=)
EP (1) EP2186386A1 (https=)
JP (1) JP2010536142A (https=)
KR (1) KR101331069B1 (https=)
CN (1) CN101779524B (https=)
NL (1) NL1035746A1 (https=)
TW (1) TWI398900B (https=)
WO (1) WO2009020390A1 (https=)

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KR20170128441A (ko) * 2015-03-11 2017-11-22 케이엘에이-텐코 코포레이션 연속파 레이저 유지 플라즈마 조명원

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US7872244B2 (en) * 2007-08-08 2011-01-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2011051839A1 (en) * 2009-10-29 2011-05-05 Koninklijke Philips Electronics N.V. Electrode system, in particular for gas discharge light sources
KR102669150B1 (ko) 2016-07-27 2024-05-27 삼성전자주식회사 자외선(uv) 노광 장치를 구비한 극자외선(euv) 노광 시스템
US12437883B1 (en) 2019-03-27 2025-10-07 Consolidated Nuclear Security, LLC Diode assembly for pulsed fusion events
US11437152B1 (en) 2019-06-27 2022-09-06 Consolidated Nuclear Security, LLC Diode assembly and method of forming a diode assembly for pulsed fusion events

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JPH0917595A (ja) * 1995-06-28 1997-01-17 Nikon Corp Ｘ線発生装置
JP2004165155A (ja) * 2002-09-19 2004-06-10 Asml Netherlands Bv 放射源、リソグラフィ装置、およびデバイス製造方法
JP2005522839A (ja) * 2002-04-10 2005-07-28 サイマー インコーポレイテッド 極紫外線光源
JP2007087939A (ja) * 2005-08-30 2007-04-05 Xtreme Technologies Gmbh 気体放電に基づく高い放射線出力を備える極紫外放射線源

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EP0527166B1 (de) * 1990-05-02 1995-06-14 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Belichtungsvorrichtung
SE502094C2 (sv) * 1991-08-16 1995-08-14 Sandvik Ab Metod för diamantbeläggning med mikrovågsplasma
JP4126096B2 (ja) 1997-01-29 2008-07-30 マイクロニック レーザー システムズ アクチボラゲット 感光性被覆を有する基板上に集束レーザ放射により構造物を製作する方法と装置
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JP4301094B2 (ja) * 2004-06-25 2009-07-22 トヨタ自動車株式会社 燃料又は還元剤添加装置及び方法、並びにプラズマトーチ
DE102004042501A1 (de) * 2004-08-31 2006-03-16 Xtreme Technologies Gmbh Vorrichtung zur Bereitstellung eines reproduzierbaren Targetstromes für die energiestrahlinduzierte Erzeugung kurzwelliger elektromagnetischer Strahlung
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0917595A (ja) * 1995-06-28 1997-01-17 Nikon Corp Ｘ線発生装置
JP2005522839A (ja) * 2002-04-10 2005-07-28 サイマー インコーポレイテッド 極紫外線光源
JP2004165155A (ja) * 2002-09-19 2004-06-10 Asml Netherlands Bv 放射源、リソグラフィ装置、およびデバイス製造方法
JP2007087939A (ja) * 2005-08-30 2007-04-05 Xtreme Technologies Gmbh 気体放電に基づく高い放射線出力を備える極紫外放射線源

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170128441A (ko) * 2015-03-11 2017-11-22 케이엘에이-텐코 코포레이션 연속파 레이저 유지 플라즈마 조명원
JP2018515875A (ja) * 2015-03-11 2018-06-14 ケーエルエー−テンカー コーポレイション 連続波レーザ維持プラズマ光源
JP2020198306A (ja) * 2015-03-11 2020-12-10 ケーエルエー コーポレイション 光維持プラズマ形成によって広帯域光を生成する光学システム
KR20230035469A (ko) * 2015-03-11 2023-03-13 케이엘에이 코포레이션 연속파 레이저 유지 플라즈마 조명원
KR102539898B1 (ko) * 2015-03-11 2023-06-02 케이엘에이 코포레이션 연속파 레이저 유지 플라즈마 조명원
KR102600360B1 (ko) * 2015-03-11 2023-11-08 케이엘에이 코포레이션 연속파 레이저 유지 플라즈마 조명원

Also Published As

Publication number Publication date
US20090040491A1 (en) 2009-02-12
KR101331069B1 (ko) 2013-11-19
CN101779524B (zh) 2012-12-05
WO2009020390A1 (en) 2009-02-12
US8493548B2 (en) 2013-07-23
EP2186386A1 (en) 2010-05-19
TWI398900B (zh) 2013-06-11
CN101779524A (zh) 2010-07-14
NL1035746A1 (nl) 2009-02-09
TW200912999A (en) 2009-03-16
US20130287968A1 (en) 2013-10-31
KR20100029849A (ko) 2010-03-17

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