JP2010534897A - 有効データインジケータの使用によってダイナミックｒａｍ電力消費を減らすシステムおよび方法 - Google Patents

有効データインジケータの使用によってダイナミックｒａｍ電力消費を減らすシステムおよび方法 Download PDF

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Publication number
JP2010534897A
JP2010534897A JP2010518407A JP2010518407A JP2010534897A JP 2010534897 A JP2010534897 A JP 2010534897A JP 2010518407 A JP2010518407 A JP 2010518407A JP 2010518407 A JP2010518407 A JP 2010518407A JP 2010534897 A JP2010534897 A JP 2010534897A
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Japan
Prior art keywords
memory device
indicator
memory
independently refreshable
valid data
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JP2010518407A
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English (en)
Japanese (ja)
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JP2010534897A5 (https=
Inventor
ミカラック、ジェラルド・ポール
ウォルフォード、バリー・ジョー
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Qualcomm Inc
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Qualcomm Inc
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Publication of JP2010534897A publication Critical patent/JP2010534897A/ja
Publication of JP2010534897A5 publication Critical patent/JP2010534897A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40622—Partial refresh of memory arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C2211/406—Refreshing of dynamic cells
    • G11C2211/4065—Low level details of refresh operations

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Power Sources (AREA)
  • Memory System (AREA)
JP2010518407A 2007-07-26 2008-07-25 有効データインジケータの使用によってダイナミックｒａｍ電力消費を減らすシステムおよび方法 Pending JP2010534897A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/828,569 US7590021B2 (en) 2007-07-26 2007-07-26 System and method to reduce dynamic RAM power consumption via the use of valid data indicators
PCT/US2008/071153 WO2009015324A1 (en) 2007-07-26 2008-07-25 System and method to reduce dynamic ram power consumption via the use of valid data indicators

Related Child Applications (1)

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JP2014105630A Division JP2014197446A (ja) 2007-07-26 2014-05-21 有効データインジケータの使用によってダイナミックｒａｍ電力消費を減らすシステムおよび方法

Publications (2)

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JP2010534897A true JP2010534897A (ja) 2010-11-11
JP2010534897A5 JP2010534897A5 (https=) 2015-04-16

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JP2010518407A Pending JP2010534897A (ja) 2007-07-26 2008-07-25 有効データインジケータの使用によってダイナミックｒａｍ電力消費を減らすシステムおよび方法
JP2014105630A Pending JP2014197446A (ja) 2007-07-26 2014-05-21 有効データインジケータの使用によってダイナミックｒａｍ電力消費を減らすシステムおよび方法

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JP2014105630A Pending JP2014197446A (ja) 2007-07-26 2014-05-21 有効データインジケータの使用によってダイナミックｒａｍ電力消費を減らすシステムおよび方法

Country Status (12)

Country Link
US (1) US7590021B2 (https=)
EP (1) EP2020659B1 (https=)
JP (2) JP2010534897A (https=)
KR (1) KR101107798B1 (https=)
CN (1) CN101765887A (https=)
AT (1) ATE528763T1 (https=)
BR (1) BRPI0814590A8 (https=)
CA (1) CA2693811C (https=)
ES (1) ES2375230T3 (https=)
MX (1) MX2010000954A (https=)
RU (1) RU2435237C1 (https=)
WO (1) WO2009015324A1 (https=)

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KR102481494B1 (ko) 2011-12-22 2022-12-26 아이씨유 메디칼 인코퍼레이티드 의료용 유체 전달 시스템, 유체 전달 방법, 전자 의료용 유체 전달 시스템, 및 전자 의료용 유체 전달 시스템 이용 방법
EP2620838B1 (en) 2012-01-26 2015-04-22 ST-Ericsson SA Automatic partial array self-refresh
CN108231109B (zh) * 2014-06-09 2021-01-29 华为技术有限公司 动态随机存取存储器dram的刷新方法、设备以及系统
US20160155491A1 (en) * 2014-11-27 2016-06-02 Advanced Micro Devices, Inc. Memory persistence management control
KR102373544B1 (ko) 2015-11-06 2022-03-11 삼성전자주식회사 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법
JP6710758B2 (ja) 2015-12-04 2020-06-17 アイシーユー・メディカル・インコーポレーテッド 医療用流体を移送するための電子式医療用流体移送装置
US9972375B2 (en) * 2016-04-15 2018-05-15 Via Alliance Semiconductor Co., Ltd. Sanitize-aware DRAM controller
USD851745S1 (en) 2016-07-19 2019-06-18 Icu Medical, Inc. Medical fluid transfer system
JP6765941B2 (ja) * 2016-11-22 2020-10-07 理想科学工業株式会社 半導体メモリ管理装置
US10437499B2 (en) * 2017-12-22 2019-10-08 Nanya Technology Corporation Hybrid memory system and method of operating the same
US10692559B2 (en) * 2018-10-31 2020-06-23 Micron Technology, Inc. Performing an on demand refresh operation of a memory sub-system
US10762946B2 (en) * 2018-12-31 2020-09-01 Micron Technology, Inc. Memory with partial array refresh
US10811076B1 (en) 2019-06-29 2020-10-20 Intel Corporation Battery life based on inhibited memory refreshes
US11721384B2 (en) * 2020-04-17 2023-08-08 Advanced Micro Devices, Inc. Hardware-assisted dynamic random access memory (DRAM) row merging
KR20240059151A (ko) 2022-10-27 2024-05-07 삼성전자주식회사 메모리 장치, 그것을 포함하는 메모리 시스템 및 그것의 동작 방법

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JP2005528717A (ja) * 2001-09-20 2005-09-22 クゥアルコム・インコーポレイテッド Ｅｄｒａｍベースアーキテクチャ

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JPH09312094A (ja) * 1996-05-23 1997-12-02 Nec Eng Ltd リフレッシュ制御システム
JPH10177786A (ja) * 1996-12-16 1998-06-30 Nec Shizuoka Ltd メモリリフレッシュ制御装置および方法
JPH1196756A (ja) * 1997-09-26 1999-04-09 Fujitsu Ltd 半導体記憶装置
JP2000123568A (ja) * 1998-10-14 2000-04-28 Ricoh Co Ltd Ｄｒａｍリフレッシュ制御回路およびリフレッシュ制御回路を内蔵したｄｒａｍ
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Also Published As

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CA2693811A1 (en) 2009-01-29
EP2020659B1 (en) 2011-10-12
ATE528763T1 (de) 2011-10-15
KR101107798B1 (ko) 2012-01-25
EP2020659A1 (en) 2009-02-04
CN101765887A (zh) 2010-06-30
ES2375230T3 (es) 2012-02-27
MX2010000954A (es) 2010-03-10
BRPI0814590A8 (pt) 2019-01-02
WO2009015324A1 (en) 2009-01-29
CA2693811C (en) 2013-11-12
JP2014197446A (ja) 2014-10-16
RU2010107059A (ru) 2011-09-10
BRPI0814590A2 (pt) 2015-01-20
US20090027989A1 (en) 2009-01-29
US7590021B2 (en) 2009-09-15
KR20100047286A (ko) 2010-05-07
RU2435237C1 (ru) 2011-11-27

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