JP2010531805A5 - - Google Patents

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Publication number
JP2010531805A5
JP2010531805A5 JP2010515195A JP2010515195A JP2010531805A5 JP 2010531805 A5 JP2010531805 A5 JP 2010531805A5 JP 2010515195 A JP2010515195 A JP 2010515195A JP 2010515195 A JP2010515195 A JP 2010515195A JP 2010531805 A5 JP2010531805 A5 JP 2010531805A5
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JP
Japan
Prior art keywords
silicon
raw material
gallium
carboxymethyl
resistivity
Prior art date
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Application number
JP2010515195A
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English (en)
Japanese (ja)
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JP2010531805A (ja
JP5559681B2 (ja
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Priority claimed from US11/769,109 external-priority patent/US7651566B2/en
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Publication of JP2010531805A publication Critical patent/JP2010531805A/ja
Publication of JP2010531805A5 publication Critical patent/JP2010531805A5/ja
Application granted granted Critical
Publication of JP5559681B2 publication Critical patent/JP5559681B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010515195A 2007-06-27 2008-06-27 補償シリコン原料から製造されたインゴットの抵抗率を制御する方法およびシステム Expired - Fee Related JP5559681B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/769,109 2007-06-27
US11/769,109 US7651566B2 (en) 2007-06-27 2007-06-27 Method and system for controlling resistivity in ingots made of compensated feedstock silicon
PCT/US2008/068644 WO2009003183A1 (en) 2007-06-27 2008-06-27 Method and system for controlling resistivity in ingots made of compensated feedstock silicon

Publications (3)

Publication Number Publication Date
JP2010531805A JP2010531805A (ja) 2010-09-30
JP2010531805A5 true JP2010531805A5 (enExample) 2011-08-11
JP5559681B2 JP5559681B2 (ja) 2014-07-23

Family

ID=40186057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010515195A Expired - Fee Related JP5559681B2 (ja) 2007-06-27 2008-06-27 補償シリコン原料から製造されたインゴットの抵抗率を制御する方法およびシステム

Country Status (7)

Country Link
US (1) US7651566B2 (enExample)
EP (2) EP2418173A3 (enExample)
JP (1) JP5559681B2 (enExample)
CN (1) CN101918314A (enExample)
AT (1) ATE532749T1 (enExample)
ES (1) ES2377343T3 (enExample)
WO (1) WO2009003183A1 (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8968467B2 (en) * 2007-06-27 2015-03-03 Silicor Materials Inc. Method and system for controlling resistivity in ingots made of compensated feedstock silicon
US20110233478A1 (en) * 2008-12-01 2011-09-29 Sumitomo Chemical Company, Limited Silicon for n-type solar cells and a method of producing phosphorus-doped silicon
NO329987B1 (no) 2009-02-26 2011-01-31 Harsharn Tathgar Halvkontinuerlig fremgangsmate for dannelse, separasjon og smelting av store, rene silisiumkrystaller
US7858427B2 (en) * 2009-03-03 2010-12-28 Applied Materials, Inc. Crystalline silicon solar cells on low purity substrate
CN102498062A (zh) * 2009-04-29 2012-06-13 卡利太阳能有限公司 升级冶金级硅材料提纯的过程控制
WO2010127184A1 (en) * 2009-04-29 2010-11-04 Calisolar, Inc. Quality control process for umg-si feedstock
US8547121B2 (en) * 2009-04-29 2013-10-01 Silicor Materials Inc. Quality control process for UMG-SI feedstock
JP5077966B2 (ja) * 2009-08-27 2012-11-21 シャープ株式会社 シリコンインゴットの製造方法
KR20120040016A (ko) * 2010-10-18 2012-04-26 엘지전자 주식회사 태양 전지용 기판 및 태양 전지
JP5194146B2 (ja) * 2010-12-28 2013-05-08 ジルトロニック アクチエンゲゼルシャフト シリコン単結晶の製造方法、シリコン単結晶、およびウエハ
NO335110B1 (no) * 2011-10-06 2014-09-15 Elkem Solar As Fremgangsmåte for fremstilling av silisiummonokrystall og multikrystalline silisiumingoter
JP5470349B2 (ja) * 2011-10-17 2014-04-16 ジルトロニック アクチエンゲゼルシャフト ｐ型シリコン単結晶およびその製造方法
CN102400219A (zh) * 2011-11-30 2012-04-04 东海晶澳太阳能科技有限公司 一种硼-镓共掺准单晶硅及其制备方法
JP2013129564A (ja) * 2011-12-21 2013-07-04 Siltronic Ag シリコン単結晶基板およびその製造方法
CN102560646B (zh) * 2012-03-20 2015-05-20 浙江大学 一种掺杂电阻率均匀的n型铸造硅单晶及其制备方法
US10724148B2 (en) 2014-01-21 2020-07-28 Infineon Technologies Ag Silicon ingot and method of manufacturing a silicon ingot
DE102014107590B3 (de) * 2014-05-28 2015-10-01 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers
US10337117B2 (en) 2014-11-07 2019-07-02 Infineon Technologies Ag Method of manufacturing a silicon ingot and silicon ingot
RU2570084C1 (ru) * 2014-12-03 2015-12-10 Федеральное государственное бюджетное образовательное учреждение высшего образования "Тверской государственный университет" Способ получения поликристаллов кремния
DE102015114177A1 (de) 2015-08-26 2017-03-02 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers
CN105970284B (zh) * 2016-05-30 2019-08-16 上海超硅半导体有限公司 一种p型单晶硅片及其制造方法
CN106294302B (zh) * 2016-08-10 2018-10-09 宁夏高创特能源科技有限公司 一种硅靶材配料调节极性、电阻率测算方法
CN109576787A (zh) * 2019-01-14 2019-04-05 浙江晶科能源有限公司 采用物理法提纯的硅料制备的多晶硅锭和多晶硅棒及方法
CN111762786B (zh) * 2020-07-13 2022-08-12 昆明理工大学 一种硅熔体可控凝固去除杂质元素的方法
CN115341271A (zh) * 2021-05-13 2022-11-15 内蒙古中环协鑫光伏材料有限公司 一种控制单晶电阻率轴向衰减速率的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7001455B2 (en) * 2001-08-10 2006-02-21 Evergreen Solar, Inc. Method and apparatus for doping semiconductors
JP3855082B2 (ja) 2002-10-07 2006-12-06 国立大学法人東京農工大学 多結晶シリコンの作製方法、多結晶シリコン、及び太陽電池
JP2004140120A (ja) * 2002-10-16 2004-05-13 Canon Inc 多結晶シリコン基板
NO333319B1 (no) 2003-12-29 2013-05-06 Elkem As Silisiummateriale for fremstilling av solceller
NO322246B1 (no) 2004-12-27 2006-09-04 Elkem Solar As Fremgangsmate for fremstilling av rettet storknede silisiumingots

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