ATE532749T1 - Verfahren zur steuerung des spezifischen widerstands in blöcken aus kompensiertem einsatzsilicium - Google Patents
Verfahren zur steuerung des spezifischen widerstands in blöcken aus kompensiertem einsatzsiliciumInfo
- Publication number
- ATE532749T1 ATE532749T1 AT08772195T AT08772195T ATE532749T1 AT E532749 T1 ATE532749 T1 AT E532749T1 AT 08772195 T AT08772195 T AT 08772195T AT 08772195 T AT08772195 T AT 08772195T AT E532749 T1 ATE532749 T1 AT E532749T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon
- feedstock
- gallium
- aluminum
- compensated
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 10
- 229910052710 silicon Inorganic materials 0.000 title abstract 10
- 239000010703 silicon Substances 0.000 title abstract 10
- 238000000034 method Methods 0.000 title abstract 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 4
- 229910052733 gallium Inorganic materials 0.000 abstract 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract 3
- 239000011574 phosphorus Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000000155 melt Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000002210 silicon-based material Substances 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/769,109 US7651566B2 (en) | 2007-06-27 | 2007-06-27 | Method and system for controlling resistivity in ingots made of compensated feedstock silicon |
| PCT/US2008/068644 WO2009003183A1 (en) | 2007-06-27 | 2008-06-27 | Method and system for controlling resistivity in ingots made of compensated feedstock silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE532749T1 true ATE532749T1 (de) | 2011-11-15 |
Family
ID=40186057
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT08772195T ATE532749T1 (de) | 2007-06-27 | 2008-06-27 | Verfahren zur steuerung des spezifischen widerstands in blöcken aus kompensiertem einsatzsilicium |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7651566B2 (enExample) |
| EP (2) | EP2418173A3 (enExample) |
| JP (1) | JP5559681B2 (enExample) |
| CN (1) | CN101918314A (enExample) |
| AT (1) | ATE532749T1 (enExample) |
| ES (1) | ES2377343T3 (enExample) |
| WO (1) | WO2009003183A1 (enExample) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8968467B2 (en) * | 2007-06-27 | 2015-03-03 | Silicor Materials Inc. | Method and system for controlling resistivity in ingots made of compensated feedstock silicon |
| US20110233478A1 (en) * | 2008-12-01 | 2011-09-29 | Sumitomo Chemical Company, Limited | Silicon for n-type solar cells and a method of producing phosphorus-doped silicon |
| NO329987B1 (no) | 2009-02-26 | 2011-01-31 | Harsharn Tathgar | Halvkontinuerlig fremgangsmate for dannelse, separasjon og smelting av store, rene silisiumkrystaller |
| US7858427B2 (en) * | 2009-03-03 | 2010-12-28 | Applied Materials, Inc. | Crystalline silicon solar cells on low purity substrate |
| CN102498062A (zh) * | 2009-04-29 | 2012-06-13 | 卡利太阳能有限公司 | 升级冶金级硅材料提纯的过程控制 |
| WO2010127184A1 (en) * | 2009-04-29 | 2010-11-04 | Calisolar, Inc. | Quality control process for umg-si feedstock |
| US8547121B2 (en) * | 2009-04-29 | 2013-10-01 | Silicor Materials Inc. | Quality control process for UMG-SI feedstock |
| JP5077966B2 (ja) * | 2009-08-27 | 2012-11-21 | シャープ株式会社 | シリコンインゴットの製造方法 |
| KR20120040016A (ko) * | 2010-10-18 | 2012-04-26 | 엘지전자 주식회사 | 태양 전지용 기판 및 태양 전지 |
| JP5194146B2 (ja) * | 2010-12-28 | 2013-05-08 | ジルトロニック アクチエンゲゼルシャフト | シリコン単結晶の製造方法、シリコン単結晶、およびウエハ |
| NO335110B1 (no) * | 2011-10-06 | 2014-09-15 | Elkem Solar As | Fremgangsmåte for fremstilling av silisiummonokrystall og multikrystalline silisiumingoter |
| JP5470349B2 (ja) * | 2011-10-17 | 2014-04-16 | ジルトロニック アクチエンゲゼルシャフト | ｐ型シリコン単結晶およびその製造方法 |
| CN102400219A (zh) * | 2011-11-30 | 2012-04-04 | 东海晶澳太阳能科技有限公司 | 一种硼-镓共掺准单晶硅及其制备方法 |
| JP2013129564A (ja) * | 2011-12-21 | 2013-07-04 | Siltronic Ag | シリコン単結晶基板およびその製造方法 |
| CN102560646B (zh) * | 2012-03-20 | 2015-05-20 | 浙江大学 | 一种掺杂电阻率均匀的n型铸造硅单晶及其制备方法 |
| US10724148B2 (en) | 2014-01-21 | 2020-07-28 | Infineon Technologies Ag | Silicon ingot and method of manufacturing a silicon ingot |
| DE102014107590B3 (de) * | 2014-05-28 | 2015-10-01 | Infineon Technologies Ag | Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers |
| US10337117B2 (en) | 2014-11-07 | 2019-07-02 | Infineon Technologies Ag | Method of manufacturing a silicon ingot and silicon ingot |
| RU2570084C1 (ru) * | 2014-12-03 | 2015-12-10 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Тверской государственный университет" | Способ получения поликристаллов кремния |
| DE102015114177A1 (de) | 2015-08-26 | 2017-03-02 | Infineon Technologies Ag | Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers |
| CN105970284B (zh) * | 2016-05-30 | 2019-08-16 | 上海超硅半导体有限公司 | 一种p型单晶硅片及其制造方法 |
| CN106294302B (zh) * | 2016-08-10 | 2018-10-09 | 宁夏高创特能源科技有限公司 | 一种硅靶材配料调节极性、电阻率测算方法 |
| CN109576787A (zh) * | 2019-01-14 | 2019-04-05 | 浙江晶科能源有限公司 | 采用物理法提纯的硅料制备的多晶硅锭和多晶硅棒及方法 |
| CN111762786B (zh) * | 2020-07-13 | 2022-08-12 | 昆明理工大学 | 一种硅熔体可控凝固去除杂质元素的方法 |
| CN115341271A (zh) * | 2021-05-13 | 2022-11-15 | 内蒙古中环协鑫光伏材料有限公司 | 一种控制单晶电阻率轴向衰减速率的方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7001455B2 (en) * | 2001-08-10 | 2006-02-21 | Evergreen Solar, Inc. | Method and apparatus for doping semiconductors |
| JP3855082B2 (ja) | 2002-10-07 | 2006-12-06 | 国立大学法人東京農工大学 | 多結晶シリコンの作製方法、多結晶シリコン、及び太陽電池 |
| JP2004140120A (ja) * | 2002-10-16 | 2004-05-13 | Canon Inc | 多結晶シリコン基板 |
| NO333319B1 (no) | 2003-12-29 | 2013-05-06 | Elkem As | Silisiummateriale for fremstilling av solceller |
| NO322246B1 (no) | 2004-12-27 | 2006-09-04 | Elkem Solar As | Fremgangsmate for fremstilling av rettet storknede silisiumingots |
-
2007
- 2007-06-27 US US11/769,109 patent/US7651566B2/en not_active Expired - Fee Related
-
2008
- 2008-06-27 WO PCT/US2008/068644 patent/WO2009003183A1/en not_active Ceased
- 2008-06-27 CN CN200880105605XA patent/CN101918314A/zh active Pending
- 2008-06-27 ES ES08772195T patent/ES2377343T3/es active Active
- 2008-06-27 AT AT08772195T patent/ATE532749T1/de active
- 2008-06-27 EP EP11188326A patent/EP2418173A3/en not_active Withdrawn
- 2008-06-27 EP EP08772195A patent/EP2173660B1/en not_active Not-in-force
- 2008-06-27 JP JP2010515195A patent/JP5559681B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| ES2377343T3 (es) | 2012-03-26 |
| EP2173660A4 (en) | 2010-08-04 |
| CN101918314A (zh) | 2010-12-15 |
| EP2418173A3 (en) | 2012-09-05 |
| HK1142870A1 (en) | 2010-12-17 |
| EP2418173A2 (en) | 2012-02-15 |
| WO2009003183A1 (en) | 2008-12-31 |
| JP2010531805A (ja) | 2010-09-30 |
| US7651566B2 (en) | 2010-01-26 |
| EP2173660A1 (en) | 2010-04-14 |
| US20090026423A1 (en) | 2009-01-29 |
| JP5559681B2 (ja) | 2014-07-23 |
| EP2173660B1 (en) | 2011-11-09 |
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