CN101918314A - 控制由补偿硅原料制成的硅锭中电阻率的方法和系统 - Google Patents

控制由补偿硅原料制成的硅锭中电阻率的方法和系统 Download PDF

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Publication number
CN101918314A
CN101918314A CN200880105605XA CN200880105605A CN101918314A CN 101918314 A CN101918314 A CN 101918314A CN 200880105605X A CN200880105605X A CN 200880105605XA CN 200880105605 A CN200880105605 A CN 200880105605A CN 101918314 A CN101918314 A CN 101918314A
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CN
China
Prior art keywords
silicon
purified
resistivity
raw material
metallurgically
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Pending
Application number
CN200880105605XA
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English (en)
Chinese (zh)
Inventor
F·基尔希特
V·阿布罗斯莫娃
M·豪雅
D·林克
J·P·拉克特里拉
K·安拉杰拉
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Silicor Materials Inc
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Silicor Materials Inc
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Publication date
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Application filed by Silicor Materials Inc filed Critical Silicor Materials Inc
Publication of CN101918314A publication Critical patent/CN101918314A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN200880105605XA 2007-06-27 2008-06-27 控制由补偿硅原料制成的硅锭中电阻率的方法和系统 Pending CN101918314A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/769,109 2007-06-27
US11/769,109 US7651566B2 (en) 2007-06-27 2007-06-27 Method and system for controlling resistivity in ingots made of compensated feedstock silicon
PCT/US2008/068644 WO2009003183A1 (en) 2007-06-27 2008-06-27 Method and system for controlling resistivity in ingots made of compensated feedstock silicon

Publications (1)

Publication Number Publication Date
CN101918314A true CN101918314A (zh) 2010-12-15

Family

ID=40186057

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880105605XA Pending CN101918314A (zh) 2007-06-27 2008-06-27 控制由补偿硅原料制成的硅锭中电阻率的方法和系统

Country Status (7)

Country Link
US (1) US7651566B2 (enExample)
EP (2) EP2418173A3 (enExample)
JP (1) JP5559681B2 (enExample)
CN (1) CN101918314A (enExample)
AT (1) ATE532749T1 (enExample)
ES (1) ES2377343T3 (enExample)
WO (1) WO2009003183A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102400219A (zh) * 2011-11-30 2012-04-04 东海晶澳太阳能科技有限公司 一种硼-镓共掺准单晶硅及其制备方法
CN102560646A (zh) * 2012-03-20 2012-07-11 浙江大学 一种掺杂电阻率均匀的n型铸造硅单晶及其制备方法
CN103282555A (zh) * 2010-12-28 2013-09-04 硅电子股份公司 硅单晶制造方法、硅单晶和晶片
CN105586633A (zh) * 2014-11-07 2016-05-18 英飞凌科技股份有限公司 制造硅锭的方法和硅锭
CN105970284A (zh) * 2016-05-30 2016-09-28 上海超硅半导体有限公司 一种p型单晶硅片及其制造方法
CN109576787A (zh) * 2019-01-14 2019-04-05 浙江晶科能源有限公司 采用物理法提纯的硅料制备的多晶硅锭和多晶硅棒及方法
US10724148B2 (en) 2014-01-21 2020-07-28 Infineon Technologies Ag Silicon ingot and method of manufacturing a silicon ingot

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8968467B2 (en) * 2007-06-27 2015-03-03 Silicor Materials Inc. Method and system for controlling resistivity in ingots made of compensated feedstock silicon
US20110233478A1 (en) * 2008-12-01 2011-09-29 Sumitomo Chemical Company, Limited Silicon for n-type solar cells and a method of producing phosphorus-doped silicon
NO329987B1 (no) 2009-02-26 2011-01-31 Harsharn Tathgar Halvkontinuerlig fremgangsmate for dannelse, separasjon og smelting av store, rene silisiumkrystaller
US7858427B2 (en) * 2009-03-03 2010-12-28 Applied Materials, Inc. Crystalline silicon solar cells on low purity substrate
CN102498062A (zh) * 2009-04-29 2012-06-13 卡利太阳能有限公司 升级冶金级硅材料提纯的过程控制
WO2010127184A1 (en) * 2009-04-29 2010-11-04 Calisolar, Inc. Quality control process for umg-si feedstock
US8547121B2 (en) * 2009-04-29 2013-10-01 Silicor Materials Inc. Quality control process for UMG-SI feedstock
JP5077966B2 (ja) * 2009-08-27 2012-11-21 シャープ株式会社 シリコンインゴットの製造方法
KR20120040016A (ko) * 2010-10-18 2012-04-26 엘지전자 주식회사 태양 전지용 기판 및 태양 전지
NO335110B1 (no) * 2011-10-06 2014-09-15 Elkem Solar As Fremgangsmåte for fremstilling av silisiummonokrystall og multikrystalline silisiumingoter
JP5470349B2 (ja) * 2011-10-17 2014-04-16 ジルトロニック アクチエンゲゼルシャフト ｐ型シリコン単結晶およびその製造方法
JP2013129564A (ja) * 2011-12-21 2013-07-04 Siltronic Ag シリコン単結晶基板およびその製造方法
DE102014107590B3 (de) * 2014-05-28 2015-10-01 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers
RU2570084C1 (ru) * 2014-12-03 2015-12-10 Федеральное государственное бюджетное образовательное учреждение высшего образования "Тверской государственный университет" Способ получения поликристаллов кремния
DE102015114177A1 (de) 2015-08-26 2017-03-02 Infineon Technologies Ag Halbleitervorrichtung, Siliziumwafer und Verfahren zum Herstellen eines Siliziumwafers
CN106294302B (zh) * 2016-08-10 2018-10-09 宁夏高创特能源科技有限公司 一种硅靶材配料调节极性、电阻率测算方法
CN111762786B (zh) * 2020-07-13 2022-08-12 昆明理工大学 一种硅熔体可控凝固去除杂质元素的方法
CN115341271A (zh) * 2021-05-13 2022-11-15 内蒙古中环协鑫光伏材料有限公司 一种控制单晶电阻率轴向衰减速率的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050112855A1 (en) * 2001-08-10 2005-05-26 Evergreen Solar, Inc. Method and apparatus for doping semiconductors
WO2007001184A1 (en) * 2004-12-27 2007-01-04 Elkem Solar As Method for producing directionally solidified silicon ingots

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3855082B2 (ja) 2002-10-07 2006-12-06 国立大学法人東京農工大学 多結晶シリコンの作製方法、多結晶シリコン、及び太陽電池
JP2004140120A (ja) * 2002-10-16 2004-05-13 Canon Inc 多結晶シリコン基板
NO333319B1 (no) 2003-12-29 2013-05-06 Elkem As Silisiummateriale for fremstilling av solceller

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050112855A1 (en) * 2001-08-10 2005-05-26 Evergreen Solar, Inc. Method and apparatus for doping semiconductors
WO2007001184A1 (en) * 2004-12-27 2007-01-04 Elkem Solar As Method for producing directionally solidified silicon ingots

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103282555A (zh) * 2010-12-28 2013-09-04 硅电子股份公司 硅单晶制造方法、硅单晶和晶片
CN103282555B (zh) * 2010-12-28 2016-08-17 硅电子股份公司 硅单晶制造方法、硅单晶和晶片
CN102400219A (zh) * 2011-11-30 2012-04-04 东海晶澳太阳能科技有限公司 一种硼-镓共掺准单晶硅及其制备方法
CN102560646A (zh) * 2012-03-20 2012-07-11 浙江大学 一种掺杂电阻率均匀的n型铸造硅单晶及其制备方法
CN102560646B (zh) * 2012-03-20 2015-05-20 浙江大学 一种掺杂电阻率均匀的n型铸造硅单晶及其制备方法
US10724148B2 (en) 2014-01-21 2020-07-28 Infineon Technologies Ag Silicon ingot and method of manufacturing a silicon ingot
CN105586633A (zh) * 2014-11-07 2016-05-18 英飞凌科技股份有限公司 制造硅锭的方法和硅锭
US10337117B2 (en) 2014-11-07 2019-07-02 Infineon Technologies Ag Method of manufacturing a silicon ingot and silicon ingot
US11242616B2 (en) 2014-11-07 2022-02-08 Infineon Technologies Ag Silicon ingot
CN105970284A (zh) * 2016-05-30 2016-09-28 上海超硅半导体有限公司 一种p型单晶硅片及其制造方法
CN105970284B (zh) * 2016-05-30 2019-08-16 上海超硅半导体有限公司 一种p型单晶硅片及其制造方法
CN109576787A (zh) * 2019-01-14 2019-04-05 浙江晶科能源有限公司 采用物理法提纯的硅料制备的多晶硅锭和多晶硅棒及方法

Also Published As

Publication number Publication date
ES2377343T3 (es) 2012-03-26
EP2173660A4 (en) 2010-08-04
ATE532749T1 (de) 2011-11-15
EP2418173A3 (en) 2012-09-05
HK1142870A1 (en) 2010-12-17
EP2418173A2 (en) 2012-02-15
WO2009003183A1 (en) 2008-12-31
JP2010531805A (ja) 2010-09-30
US7651566B2 (en) 2010-01-26
EP2173660A1 (en) 2010-04-14
US20090026423A1 (en) 2009-01-29
JP5559681B2 (ja) 2014-07-23
EP2173660B1 (en) 2011-11-09

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SE01 Entry into force of request for substantive examination
C53 Correction of patent of invention or patent application
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Address after: American California

Applicant after: Calisolar Inc.

Address before: American California

Applicant before: Calisolar Inc.

COR Change of bibliographic data

Free format text: CORRECT: APPLICANT; FROM: CALISOLAR, INC. TO: SILICON MATERIALS, INC.

C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20101215