JP2012512126A5 - - Google Patents

Download PDF

Info

Publication number
JP2012512126A5
JP2012512126A5 JP2011542082A JP2011542082A JP2012512126A5 JP 2012512126 A5 JP2012512126 A5 JP 2012512126A5 JP 2011542082 A JP2011542082 A JP 2011542082A JP 2011542082 A JP2011542082 A JP 2011542082A JP 2012512126 A5 JP2012512126 A5 JP 2012512126A5
Authority
JP
Japan
Prior art keywords
ingot
application publication
reduced
prior
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011542082A
Other languages
English (en)
Japanese (ja)
Other versions
JP5759382B2 (ja
JP2012512126A (ja
Filing date
Publication date
Priority claimed from UAA200814479A external-priority patent/UA92392C2/uk
Application filed filed Critical
Priority claimed from PCT/UA2009/000067 external-priority patent/WO2010071614A1/en
Publication of JP2012512126A publication Critical patent/JP2012512126A/ja
Publication of JP2012512126A5 publication Critical patent/JP2012512126A5/ja
Application granted granted Critical
Publication of JP5759382B2 publication Critical patent/JP5759382B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2011542082A 2008-12-15 2009-12-14 誘導法により多結晶シリコンインゴットを製造する方法 Expired - Fee Related JP5759382B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
UAA200814479A UA92392C2 (uk) 2008-12-15 2008-12-15 Спосіб одержання зливків полікристалічного кремнію індукційним методом та пристрій для його здійснення
UAA200814479 2008-12-15
PCT/UA2009/000067 WO2010071614A1 (en) 2008-12-15 2009-12-14 Process for producing multicrystalline silicon ingots by the induction method and apparatus for carrying out the same

Publications (3)

Publication Number Publication Date
JP2012512126A JP2012512126A (ja) 2012-05-31
JP2012512126A5 true JP2012512126A5 (enExample) 2013-02-07
JP5759382B2 JP5759382B2 (ja) 2015-08-05

Family

ID=56555903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011542082A Expired - Fee Related JP5759382B2 (ja) 2008-12-15 2009-12-14 誘導法により多結晶シリコンインゴットを製造する方法

Country Status (6)

Country Link
US (2) US20110247364A1 (enExample)
EP (1) EP2376244B1 (enExample)
JP (1) JP5759382B2 (enExample)
KR (1) KR101335147B1 (enExample)
CN (1) CN102438773B (enExample)
WO (1) WO2010071614A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102120579B (zh) * 2011-01-29 2012-10-03 大连隆田科技有限公司 一种电子束高效、连续熔炼提纯多晶硅的方法及设备
CN104805506B (zh) * 2015-03-24 2017-06-16 中国科学院工程热物理研究所 一种基于液态金属强化换热控制坩埚热应力的方法
CN106735078B (zh) * 2016-11-18 2019-07-05 中国科学院金属研究所 一种非晶合金或其复合材料的连续精密成形设备和工艺
CN111230077A (zh) * 2020-03-09 2020-06-05 西北工业大学 高温合金宽调速定向凝固装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4572812A (en) 1984-08-13 1986-02-25 The United States Of America As Represented By The Secretary Of Energy Method and apparatus for casting conductive and semiconductive materials
EP0349904B1 (en) 1988-07-05 1994-02-23 Sumitomo Sitix Co., Ltd. Apparatus for casting silicon
JPH07138012A (ja) * 1993-11-16 1995-05-30 Sumitomo Sitix Corp シリコン鋳造装置
DE19607098C2 (de) * 1996-02-24 1999-06-17 Ald Vacuum Techn Gmbh Verfahren und Vorrichtung zum gerichteten Erstarren einer Schmelze aus Silizium zu einem Block in einem bodenlosen metallischen Kaltwandtiegel
DE60037944T2 (de) 2000-12-28 2009-01-22 Sumco Corp. Kontinuierliches giessverfahren für silizium
CN2715885Y (zh) * 2004-07-08 2005-08-10 上海大学 梯度强磁场单向凝固结晶装置
CN1275724C (zh) * 2004-08-11 2006-09-20 哈尔滨工业大学 多功能冷坩埚电磁精确成形与定向凝固装置
US7368368B2 (en) * 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
JP2007051026A (ja) * 2005-08-18 2007-03-01 Sumco Solar Corp シリコン多結晶の鋳造方法
JPWO2007063751A1 (ja) * 2005-11-29 2009-05-07 セイコーインスツル株式会社 表示装置の製造方法、及び貼り合わせ方法
CN1873062A (zh) * 2006-05-06 2006-12-06 大连理工大学 一种太阳能电池用高纯多晶硅的制备方法和装置
JP2008156166A (ja) * 2006-12-25 2008-07-10 Sumco Solar Corp シリコンインゴットの鋳造方法および切断方法
CN101307487B (zh) * 2007-05-16 2010-05-19 佳科太阳能硅(厦门)有限公司 一种连续生产多晶硅锭的定向凝固方法及其装置

Similar Documents

Publication Publication Date Title
RU2011147346A (ru) Материал для кабеля на основе алюминиевого сплава с высокой степенью удлинения и способ его получения
KR100984926B1 (ko) 용융된 물질을 정제하기 위한 방법 및 장치
NO20081902L (no) Metode av produsering sol-grad polysilisium metallbarre med relevantee induksjonsapparat
JP2012512126A5 (enExample)
Bai et al. Effect of Ti addition on B removal during silicon refining in Al-30% Si alloy directional solidification
CN104278173A (zh) 一种高强高塑TiAl合金材料及其制备方法
CN101898763A (zh) 一种电场定向凝固提纯多晶硅的制备方法
Wang et al. Control of silicon solidification and the impurities from an Al–Si melt
CN104030291A (zh) 一种用合金法高效去除硅中的磷的方法
CN107236913B (zh) 一种锆基非晶合金及其制备方法
CN101733393A (zh) 一种高性能铝合金精密压铸件制备方法
CN103276231B (zh) 一种铸造高温合金真空感应冶炼脱s和o的方法
US9617618B2 (en) Silicon purification mold and method
WO2008026728A1 (en) Metallic silicon and process for producing the same
CN103924170B (zh) 一种锆基非晶合金的遗传制备方法
CN104071790A (zh) 电磁搅拌硅合金熔体硅提纯装置及方法
Tan et al. Evolution of primary phases and high-temperature compressive behaviors of as-cast AuSn20 alloys prepared by different solidification pathways
Yu et al. Low-cost process for silicon purification with bubble adsorption in Al-Si melt
CN105819451B (zh) 一种直流电场诱导合金定向凝固生长、强化合金精炼过程的工艺
Cui et al. Microstructure evolution and corrosion behavior of directionally solidified FeCoNiCrCu high entropy alloy
Li et al. Distributions of substitutional and interstitial impurities in silicon ingot with different grain morphologies
Kawamura et al. Reductive removal of phosphorus in silicon using CaO-CaF2 slag
CN107354331B (zh) 以高熔点金属为基底籽晶控制TiAl基合金定向凝固组织片层取向的方法
CN201296663Y (zh) 多晶硅静态温梯定向凝固提纯炉
CN104556048B (zh) 一种在多晶硅定向凝固提纯中分离高金属杂质区的设备及分离方法