JP5759382B2 - 誘導法により多結晶シリコンインゴットを製造する方法 - Google Patents
誘導法により多結晶シリコンインゴットを製造する方法 Download PDFInfo
- Publication number
- JP5759382B2 JP5759382B2 JP2011542082A JP2011542082A JP5759382B2 JP 5759382 B2 JP5759382 B2 JP 5759382B2 JP 2011542082 A JP2011542082 A JP 2011542082A JP 2011542082 A JP2011542082 A JP 2011542082A JP 5759382 B2 JP5759382 B2 JP 5759382B2
- Authority
- JP
- Japan
- Prior art keywords
- heating device
- ingot
- airtight
- movable bottom
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 68
- 238000000034 method Methods 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 230000006698 induction Effects 0.000 title claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 95
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 60
- 229910052710 silicon Inorganic materials 0.000 claims description 60
- 239000010703 silicon Substances 0.000 claims description 60
- 230000008018 melting Effects 0.000 claims description 43
- 238000002844 melting Methods 0.000 claims description 39
- 238000001816 cooling Methods 0.000 claims description 37
- 239000012535 impurity Substances 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 21
- 238000005266 casting Methods 0.000 claims description 19
- 239000007858 starting material Substances 0.000 claims description 13
- 238000004090 dissolution Methods 0.000 claims description 11
- 230000005672 electromagnetic field Effects 0.000 claims description 11
- 230000008646 thermal stress Effects 0.000 claims description 7
- 238000004320 controlled atmosphere Methods 0.000 claims description 4
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000010309 melting process Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 210000003625 skull Anatomy 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004157 plasmatron Methods 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009749 continuous casting Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/02—Use of electric or magnetic effects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
- B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
- B22D27/045—Directionally solidified castings
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/005—Transport systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| UAA200814479A UA92392C2 (uk) | 2008-12-15 | 2008-12-15 | Спосіб одержання зливків полікристалічного кремнію індукційним методом та пристрій для його здійснення |
| UAA200814479 | 2008-12-15 | ||
| PCT/UA2009/000067 WO2010071614A1 (en) | 2008-12-15 | 2009-12-14 | Process for producing multicrystalline silicon ingots by the induction method and apparatus for carrying out the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012512126A JP2012512126A (ja) | 2012-05-31 |
| JP2012512126A5 JP2012512126A5 (enExample) | 2013-02-07 |
| JP5759382B2 true JP5759382B2 (ja) | 2015-08-05 |
Family
ID=56555903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011542082A Expired - Fee Related JP5759382B2 (ja) | 2008-12-15 | 2009-12-14 | 誘導法により多結晶シリコンインゴットを製造する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20110247364A1 (enExample) |
| EP (1) | EP2376244B1 (enExample) |
| JP (1) | JP5759382B2 (enExample) |
| KR (1) | KR101335147B1 (enExample) |
| CN (1) | CN102438773B (enExample) |
| WO (1) | WO2010071614A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102120579B (zh) * | 2011-01-29 | 2012-10-03 | 大连隆田科技有限公司 | 一种电子束高效、连续熔炼提纯多晶硅的方法及设备 |
| CN104805506B (zh) * | 2015-03-24 | 2017-06-16 | 中国科学院工程热物理研究所 | 一种基于液态金属强化换热控制坩埚热应力的方法 |
| CN106735078B (zh) * | 2016-11-18 | 2019-07-05 | 中国科学院金属研究所 | 一种非晶合金或其复合材料的连续精密成形设备和工艺 |
| CN111230077A (zh) * | 2020-03-09 | 2020-06-05 | 西北工业大学 | 高温合金宽调速定向凝固装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4572812A (en) | 1984-08-13 | 1986-02-25 | The United States Of America As Represented By The Secretary Of Energy | Method and apparatus for casting conductive and semiconductive materials |
| EP0349904B1 (en) | 1988-07-05 | 1994-02-23 | Sumitomo Sitix Co., Ltd. | Apparatus for casting silicon |
| JPH07138012A (ja) * | 1993-11-16 | 1995-05-30 | Sumitomo Sitix Corp | シリコン鋳造装置 |
| DE19607098C2 (de) * | 1996-02-24 | 1999-06-17 | Ald Vacuum Techn Gmbh | Verfahren und Vorrichtung zum gerichteten Erstarren einer Schmelze aus Silizium zu einem Block in einem bodenlosen metallischen Kaltwandtiegel |
| DE60037944T2 (de) | 2000-12-28 | 2009-01-22 | Sumco Corp. | Kontinuierliches giessverfahren für silizium |
| CN2715885Y (zh) * | 2004-07-08 | 2005-08-10 | 上海大学 | 梯度强磁场单向凝固结晶装置 |
| CN1275724C (zh) * | 2004-08-11 | 2006-09-20 | 哈尔滨工业大学 | 多功能冷坩埚电磁精确成形与定向凝固装置 |
| US7368368B2 (en) * | 2004-08-18 | 2008-05-06 | Cree, Inc. | Multi-chamber MOCVD growth apparatus for high performance/high throughput |
| JP2007051026A (ja) * | 2005-08-18 | 2007-03-01 | Sumco Solar Corp | シリコン多結晶の鋳造方法 |
| JPWO2007063751A1 (ja) * | 2005-11-29 | 2009-05-07 | セイコーインスツル株式会社 | 表示装置の製造方法、及び貼り合わせ方法 |
| CN1873062A (zh) * | 2006-05-06 | 2006-12-06 | 大连理工大学 | 一种太阳能电池用高纯多晶硅的制备方法和装置 |
| JP2008156166A (ja) * | 2006-12-25 | 2008-07-10 | Sumco Solar Corp | シリコンインゴットの鋳造方法および切断方法 |
| CN101307487B (zh) * | 2007-05-16 | 2010-05-19 | 佳科太阳能硅(厦门)有限公司 | 一种连续生产多晶硅锭的定向凝固方法及其装置 |
-
2009
- 2009-12-14 EP EP09802044.9A patent/EP2376244B1/en not_active Not-in-force
- 2009-12-14 KR KR1020117016416A patent/KR101335147B1/ko not_active Expired - Fee Related
- 2009-12-14 JP JP2011542082A patent/JP5759382B2/ja not_active Expired - Fee Related
- 2009-12-14 WO PCT/UA2009/000067 patent/WO2010071614A1/en not_active Ceased
- 2009-12-14 CN CN200980150565.5A patent/CN102438773B/zh not_active Expired - Fee Related
- 2009-12-14 US US13/139,612 patent/US20110247364A1/en not_active Abandoned
-
2014
- 2014-12-25 US US14/583,141 patent/US9410266B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN102438773B (zh) | 2015-04-01 |
| EP2376244A1 (en) | 2011-10-19 |
| WO2010071614A1 (en) | 2010-06-24 |
| KR101335147B1 (ko) | 2013-12-05 |
| US9410266B2 (en) | 2016-08-09 |
| EP2376244B1 (en) | 2017-02-22 |
| CN102438773A (zh) | 2012-05-02 |
| US20110247364A1 (en) | 2011-10-13 |
| KR20110117083A (ko) | 2011-10-26 |
| US20150107304A1 (en) | 2015-04-23 |
| JP2012512126A (ja) | 2012-05-31 |
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| LAPS | Cancellation because of no payment of annual fees |