CN102438773B - 由感应法生产多晶硅锭的方法及其实施装置 - Google Patents

由感应法生产多晶硅锭的方法及其实施装置 Download PDF

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Publication number
CN102438773B
CN102438773B CN200980150565.5A CN200980150565A CN102438773B CN 102438773 B CN102438773 B CN 102438773B CN 200980150565 A CN200980150565 A CN 200980150565A CN 102438773 B CN102438773 B CN 102438773B
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CN
China
Prior art keywords
ingot
silicon
firing equipment
melting
polysilicon
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN200980150565.5A
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English (en)
Chinese (zh)
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CN102438773A (zh
Inventor
S·白令戈夫
V·奥尼琴科
A·史库鲁科夫
Y·切帕克
S·波辛刚
S·马切科
A·舍甫丘克
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Solin Development BV
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PILLAR JSC
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Priority claimed from UAA200814479A external-priority patent/UA92392C2/uk
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
    • B22D27/02—Use of electric or magnetic effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
    • B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
    • B22D27/045—Directionally solidified castings
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005—Transport systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
CN200980150565.5A 2008-12-15 2009-12-14 由感应法生产多晶硅锭的方法及其实施装置 Expired - Fee Related CN102438773B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
UAA200814479A UA92392C2 (uk) 2008-12-15 2008-12-15 Спосіб одержання зливків полікристалічного кремнію індукційним методом та пристрій для його здійснення
UAA200814479 2008-12-15
PCT/UA2009/000067 WO2010071614A1 (en) 2008-12-15 2009-12-14 Process for producing multicrystalline silicon ingots by the induction method and apparatus for carrying out the same

Publications (2)

Publication Number Publication Date
CN102438773A CN102438773A (zh) 2012-05-02
CN102438773B true CN102438773B (zh) 2015-04-01

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CN200980150565.5A Expired - Fee Related CN102438773B (zh) 2008-12-15 2009-12-14 由感应法生产多晶硅锭的方法及其实施装置

Country Status (6)

Country Link
US (2) US20110247364A1 (enExample)
EP (1) EP2376244B1 (enExample)
JP (1) JP5759382B2 (enExample)
KR (1) KR101335147B1 (enExample)
CN (1) CN102438773B (enExample)
WO (1) WO2010071614A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102120579B (zh) * 2011-01-29 2012-10-03 大连隆田科技有限公司 一种电子束高效、连续熔炼提纯多晶硅的方法及设备
CN104805506B (zh) * 2015-03-24 2017-06-16 中国科学院工程热物理研究所 一种基于液态金属强化换热控制坩埚热应力的方法
CN106735078B (zh) * 2016-11-18 2019-07-05 中国科学院金属研究所 一种非晶合金或其复合材料的连续精密成形设备和工艺
CN111230077A (zh) * 2020-03-09 2020-06-05 西北工业大学 高温合金宽调速定向凝固装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3529044A1 (de) * 1984-08-13 1986-02-20 United States Department Of Energy, Washington, D.C. Verfahren und vorrichtung zum giessen von leitenden und halbleitenden materialien
CN1597188A (zh) * 2004-08-11 2005-03-23 哈尔滨工业大学 多功能冷坩埚电磁精确成形与定向凝固装置
CN2715885Y (zh) * 2004-07-08 2005-08-10 上海大学 梯度强磁场单向凝固结晶装置
CN1873062A (zh) * 2006-05-06 2006-12-06 大连理工大学 一种太阳能电池用高纯多晶硅的制备方法和装置
EP1754806A1 (en) * 2005-08-18 2007-02-21 Sumco Solar Corporation Method for casting polycrystalline silicon
CN101307487A (zh) * 2007-05-16 2008-11-19 佳科太阳能硅(厦门)有限公司 一种连续生产多晶硅锭的定向凝固方法及其装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0349904B1 (en) 1988-07-05 1994-02-23 Sumitomo Sitix Co., Ltd. Apparatus for casting silicon
JPH07138012A (ja) * 1993-11-16 1995-05-30 Sumitomo Sitix Corp シリコン鋳造装置
DE19607098C2 (de) * 1996-02-24 1999-06-17 Ald Vacuum Techn Gmbh Verfahren und Vorrichtung zum gerichteten Erstarren einer Schmelze aus Silizium zu einem Block in einem bodenlosen metallischen Kaltwandtiegel
DE60037944T2 (de) 2000-12-28 2009-01-22 Sumco Corp. Kontinuierliches giessverfahren für silizium
US7368368B2 (en) * 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
JPWO2007063751A1 (ja) * 2005-11-29 2009-05-07 セイコーインスツル株式会社 表示装置の製造方法、及び貼り合わせ方法
JP2008156166A (ja) * 2006-12-25 2008-07-10 Sumco Solar Corp シリコンインゴットの鋳造方法および切断方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3529044A1 (de) * 1984-08-13 1986-02-20 United States Department Of Energy, Washington, D.C. Verfahren und vorrichtung zum giessen von leitenden und halbleitenden materialien
CN2715885Y (zh) * 2004-07-08 2005-08-10 上海大学 梯度强磁场单向凝固结晶装置
CN1597188A (zh) * 2004-08-11 2005-03-23 哈尔滨工业大学 多功能冷坩埚电磁精确成形与定向凝固装置
EP1754806A1 (en) * 2005-08-18 2007-02-21 Sumco Solar Corporation Method for casting polycrystalline silicon
CN1873062A (zh) * 2006-05-06 2006-12-06 大连理工大学 一种太阳能电池用高纯多晶硅的制备方法和装置
CN101307487A (zh) * 2007-05-16 2008-11-19 佳科太阳能硅(厦门)有限公司 一种连续生产多晶硅锭的定向凝固方法及其装置

Also Published As

Publication number Publication date
JP5759382B2 (ja) 2015-08-05
EP2376244A1 (en) 2011-10-19
WO2010071614A1 (en) 2010-06-24
KR101335147B1 (ko) 2013-12-05
US9410266B2 (en) 2016-08-09
EP2376244B1 (en) 2017-02-22
CN102438773A (zh) 2012-05-02
US20110247364A1 (en) 2011-10-13
KR20110117083A (ko) 2011-10-26
US20150107304A1 (en) 2015-04-23
JP2012512126A (ja) 2012-05-31

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