KR101335147B1 - 유도방식에 의해 다결정 실리콘 잉곳들을 생산하는 방법 및 이를 위한 장치 - Google Patents

유도방식에 의해 다결정 실리콘 잉곳들을 생산하는 방법 및 이를 위한 장치 Download PDF

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KR101335147B1
KR101335147B1 KR1020117016416A KR20117016416A KR101335147B1 KR 101335147 B1 KR101335147 B1 KR 101335147B1 KR 1020117016416 A KR1020117016416 A KR 1020117016416A KR 20117016416 A KR20117016416 A KR 20117016416A KR 101335147 B1 KR101335147 B1 KR 101335147B1
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ingot
polycrystalline silicon
heating device
heating
silicon
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KR20110117083A (ko
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세르기 베린고브
볼로디미르 오니센코
아나톨리 시쿨코브
유리 셰어파크
세르기 포지건
스테판 마르첸코
안드리 셰브추크
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필러 엘티디.
실리시오 솔라, 에스.에이.유.
토바리스트보 제트 오브메저노유 비드포비달니스트유 “테시스”
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
    • B22D27/02—Use of electric or magnetic effects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
    • B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
    • B22D27/045—Directionally solidified castings
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005—Transport systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
KR1020117016416A 2008-12-15 2009-12-14 유도방식에 의해 다결정 실리콘 잉곳들을 생산하는 방법 및 이를 위한 장치 Expired - Fee Related KR101335147B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
UAA200814479A UA92392C2 (uk) 2008-12-15 2008-12-15 Спосіб одержання зливків полікристалічного кремнію індукційним методом та пристрій для його здійснення
UAA200814479 2008-12-15
PCT/UA2009/000067 WO2010071614A1 (en) 2008-12-15 2009-12-14 Process for producing multicrystalline silicon ingots by the induction method and apparatus for carrying out the same

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KR20110117083A KR20110117083A (ko) 2011-10-26
KR101335147B1 true KR101335147B1 (ko) 2013-12-05

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US (2) US20110247364A1 (enExample)
EP (1) EP2376244B1 (enExample)
JP (1) JP5759382B2 (enExample)
KR (1) KR101335147B1 (enExample)
CN (1) CN102438773B (enExample)
WO (1) WO2010071614A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102120579B (zh) * 2011-01-29 2012-10-03 大连隆田科技有限公司 一种电子束高效、连续熔炼提纯多晶硅的方法及设备
CN104805506B (zh) * 2015-03-24 2017-06-16 中国科学院工程热物理研究所 一种基于液态金属强化换热控制坩埚热应力的方法
CN106735078B (zh) * 2016-11-18 2019-07-05 中国科学院金属研究所 一种非晶合金或其复合材料的连续精密成形设备和工艺
CN111230077A (zh) * 2020-03-09 2020-06-05 西北工业大学 高温合金宽调速定向凝固装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1754806A1 (en) * 2005-08-18 2007-02-21 Sumco Solar Corporation Method for casting polycrystalline silicon
US20080179037A1 (en) * 2006-12-25 2008-07-31 Mitsuo Yoshihara Casting method of silicon ingot and cutting method of the same
US20090283211A1 (en) * 2005-11-29 2009-11-19 Tsutomu Matsuhira Method of Manufacturing a Display Device and Bonding Method

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
US4572812A (en) 1984-08-13 1986-02-25 The United States Of America As Represented By The Secretary Of Energy Method and apparatus for casting conductive and semiconductive materials
EP0349904B1 (en) 1988-07-05 1994-02-23 Sumitomo Sitix Co., Ltd. Apparatus for casting silicon
JPH07138012A (ja) * 1993-11-16 1995-05-30 Sumitomo Sitix Corp シリコン鋳造装置
DE19607098C2 (de) * 1996-02-24 1999-06-17 Ald Vacuum Techn Gmbh Verfahren und Vorrichtung zum gerichteten Erstarren einer Schmelze aus Silizium zu einem Block in einem bodenlosen metallischen Kaltwandtiegel
DE60037944T2 (de) 2000-12-28 2009-01-22 Sumco Corp. Kontinuierliches giessverfahren für silizium
CN2715885Y (zh) * 2004-07-08 2005-08-10 上海大学 梯度强磁场单向凝固结晶装置
CN1275724C (zh) * 2004-08-11 2006-09-20 哈尔滨工业大学 多功能冷坩埚电磁精确成形与定向凝固装置
US7368368B2 (en) * 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
CN1873062A (zh) * 2006-05-06 2006-12-06 大连理工大学 一种太阳能电池用高纯多晶硅的制备方法和装置
CN101307487B (zh) * 2007-05-16 2010-05-19 佳科太阳能硅(厦门)有限公司 一种连续生产多晶硅锭的定向凝固方法及其装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1754806A1 (en) * 2005-08-18 2007-02-21 Sumco Solar Corporation Method for casting polycrystalline silicon
US20090283211A1 (en) * 2005-11-29 2009-11-19 Tsutomu Matsuhira Method of Manufacturing a Display Device and Bonding Method
US20080179037A1 (en) * 2006-12-25 2008-07-31 Mitsuo Yoshihara Casting method of silicon ingot and cutting method of the same

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Publication number Publication date
CN102438773B (zh) 2015-04-01
JP5759382B2 (ja) 2015-08-05
EP2376244A1 (en) 2011-10-19
WO2010071614A1 (en) 2010-06-24
US9410266B2 (en) 2016-08-09
EP2376244B1 (en) 2017-02-22
CN102438773A (zh) 2012-05-02
US20110247364A1 (en) 2011-10-13
KR20110117083A (ko) 2011-10-26
US20150107304A1 (en) 2015-04-23
JP2012512126A (ja) 2012-05-31

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