JP2010527140A5 - - Google Patents
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- Publication number
- JP2010527140A5 JP2010527140A5 JP2009549213A JP2009549213A JP2010527140A5 JP 2010527140 A5 JP2010527140 A5 JP 2010527140A5 JP 2009549213 A JP2009549213 A JP 2009549213A JP 2009549213 A JP2009549213 A JP 2009549213A JP 2010527140 A5 JP2010527140 A5 JP 2010527140A5
- Authority
- JP
- Japan
- Prior art keywords
- stress
- layer
- region
- sacrificial
- active semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 32
- 238000000034 method Methods 0.000 claims 18
- 230000005669 field effect Effects 0.000 claims 8
- 238000010438 heat treatment Methods 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- 239000003989 dielectric material Substances 0.000 claims 7
- 238000002955 isolation Methods 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 5
- 230000009969 flowable effect Effects 0.000 claims 5
- 230000002093 peripheral effect Effects 0.000 claims 5
- 239000012212 insulator Substances 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 239000005368 silicate glass Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- 239000005380 borophosphosilicate glass Substances 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/673,716 | 2007-02-12 | ||
| US11/673,716 US7632724B2 (en) | 2007-02-12 | 2007-02-12 | Stressed SOI FET having tensile and compressive device regions |
| PCT/US2008/053152 WO2008100751A1 (en) | 2007-02-12 | 2008-02-06 | Stressed soi fet having tensile and compressive device regions |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010527140A JP2010527140A (ja) | 2010-08-05 |
| JP2010527140A5 true JP2010527140A5 (https=) | 2010-09-16 |
| JP5244128B2 JP5244128B2 (ja) | 2013-07-24 |
Family
ID=39685098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009549213A Expired - Fee Related JP5244128B2 (ja) | 2007-02-12 | 2008-02-06 | 電界効果トランジスタ（ＦＥＴ）の製造方法、ｎ型およびｐ型電界効果トランジスタ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7632724B2 (https=) |
| JP (1) | JP5244128B2 (https=) |
| KR (1) | KR20090121290A (https=) |
| BR (1) | BRPI0807243A2 (https=) |
| TW (1) | TW200901367A (https=) |
| WO (1) | WO2008100751A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7888197B2 (en) * | 2007-01-11 | 2011-02-15 | International Business Machines Corporation | Method of forming stressed SOI FET having doped glass box layer using sacrificial stressed layer |
| JP5299268B2 (ja) * | 2007-03-30 | 2013-09-25 | 富士通セミコンダクター株式会社 | 半導体集積回路装置およびその製造方法 |
| US8169025B2 (en) * | 2010-01-19 | 2012-05-01 | International Business Machines Corporation | Strained CMOS device, circuit and method of fabrication |
| US9406798B2 (en) | 2010-08-27 | 2016-08-02 | Acorn Technologies, Inc. | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer |
| US8642430B2 (en) * | 2012-04-09 | 2014-02-04 | GlobalFoundries, Inc. | Processes for preparing stressed semiconductor wafers and for preparing devices including the stressed semiconductor wafers |
| US9406508B2 (en) | 2013-10-31 | 2016-08-02 | Samsung Electronics Co., Ltd. | Methods of forming a semiconductor layer including germanium with low defectivity |
| US9209301B1 (en) * | 2014-09-18 | 2015-12-08 | Soitec | Method for fabricating semiconductor layers including transistor channels having different strain states, and related semiconductor layers |
| FR3029011B1 (fr) * | 2014-11-25 | 2018-04-13 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede ameliore de mise en contrainte d'une zone de canal de transistor |
| US9768254B2 (en) | 2015-07-30 | 2017-09-19 | International Business Machines Corporation | Leakage-free implantation-free ETSOI transistors |
| US9685510B2 (en) * | 2015-09-10 | 2017-06-20 | International Business Machines Corporation | SiGe CMOS with tensely strained NFET and compressively strained PFET |
| WO2018125120A1 (en) * | 2016-12-29 | 2018-07-05 | Intel Corporation | Techniques for forming dual-strain fins for co-integrated n-mos and p-mos devices |
| US10263107B2 (en) * | 2017-05-01 | 2019-04-16 | The Regents Of The University Of California | Strain gated transistors and method |
| US10770586B2 (en) * | 2018-02-04 | 2020-09-08 | Tower Semiconductor Ltd. | Stressing structure with low hydrogen content layer over NiSi salicide |
| CN115376606B (zh) * | 2022-08-11 | 2024-09-17 | 深圳市晶存科技股份有限公司 | 动态随机存储器通道测试方法、系统、装置及存储介质 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3951134B2 (ja) * | 2003-07-24 | 2007-08-01 | セイコーエプソン株式会社 | 半導体装置およびその製造方法 |
| US20070126034A1 (en) * | 2003-10-10 | 2007-06-07 | Tokyo Institute Of Technology | Semiconductor substrate, semiconductor device and process for producing semiconductor substrate |
| WO2005112129A1 (ja) * | 2004-05-13 | 2005-11-24 | Fujitsu Limited | 半導体装置およびその製造方法、半導体基板の製造方法 |
| US7227205B2 (en) | 2004-06-24 | 2007-06-05 | International Business Machines Corporation | Strained-silicon CMOS device and method |
| US6991998B2 (en) * | 2004-07-02 | 2006-01-31 | International Business Machines Corporation | Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer |
| JP2006040958A (ja) * | 2004-07-22 | 2006-02-09 | Sumco Corp | 歪みｓｏｉ基板 |
| US7064045B2 (en) * | 2004-08-30 | 2006-06-20 | Miradia Inc. | Laser based method and device for forming spacer structures for packaging optical reflection devices |
| KR100585157B1 (ko) | 2004-09-07 | 2006-05-30 | 삼성전자주식회사 | 다수의 와이어 브릿지 채널을 구비한 모스 트랜지스터 및그 제조방법 |
| US7125759B2 (en) * | 2005-03-23 | 2006-10-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor-on-insulator (SOI) strained active areas |
| US7432149B2 (en) * | 2005-06-23 | 2008-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS on SOI substrates with hybrid crystal orientations |
| US7381649B2 (en) | 2005-07-29 | 2008-06-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure for a multiple-gate FET device and a method for its fabrication |
| US20080191285A1 (en) * | 2007-02-09 | 2008-08-14 | Chih-Hsin Ko | CMOS devices with schottky source and drain regions |
-
2007
- 2007-02-12 US US11/673,716 patent/US7632724B2/en not_active Expired - Fee Related
-
2008
- 2008-02-06 KR KR1020097017539A patent/KR20090121290A/ko not_active Abandoned
- 2008-02-06 JP JP2009549213A patent/JP5244128B2/ja not_active Expired - Fee Related
- 2008-02-06 WO PCT/US2008/053152 patent/WO2008100751A1/en not_active Ceased
- 2008-02-06 BR BRPI0807243-4A2A patent/BRPI0807243A2/pt not_active Application Discontinuation
- 2008-02-12 TW TW097104762A patent/TW200901367A/zh unknown
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