JP2010517233A - 改良された粒子ビーム発生装置 - Google Patents

改良された粒子ビーム発生装置 Download PDF

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Publication number
JP2010517233A
JP2010517233A JP2009546818A JP2009546818A JP2010517233A JP 2010517233 A JP2010517233 A JP 2010517233A JP 2009546818 A JP2009546818 A JP 2009546818A JP 2009546818 A JP2009546818 A JP 2009546818A JP 2010517233 A JP2010517233 A JP 2010517233A
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JP
Japan
Prior art keywords
particle
particle beam
beam generator
focusing
extraction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009546818A
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English (en)
Japanese (ja)
Inventor
イースタム，デレク・アンソニー
Original Assignee
エヌエフエイビー・リミテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0701470A external-priority patent/GB0701470D0/en
Priority claimed from GB0707958A external-priority patent/GB0707958D0/en
Priority claimed from GB0713447A external-priority patent/GB0713447D0/en
Priority claimed from GB0715495A external-priority patent/GB0715495D0/en
Priority claimed from GB0717927A external-priority patent/GB0717927D0/en
Application filed by エヌエフエイビー・リミテッド filed Critical エヌエフエイビー・リミテッド
Publication of JP2010517233A publication Critical patent/JP2010517233A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/065—Construction of guns or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/03—Mounting, supporting, spacing or insulating electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H01J2237/062—Reducing size of gun
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06341—Field emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1207—Einzel lenses

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2009546818A 2007-01-25 2008-01-24 改良された粒子ビーム発生装置 Pending JP2010517233A (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
GB0701470A GB0701470D0 (en) 2007-01-25 2007-01-25 Improved Particle Beam Generator
GB0707958A GB0707958D0 (en) 2007-04-25 2007-04-25 Improved particle beam generator
GB0713447A GB0713447D0 (en) 2007-07-11 2007-07-11 Improved particles beam generator
GB0715495A GB0715495D0 (en) 2007-08-10 2007-08-10 Improved particle beam generator
GB0717927A GB0717927D0 (en) 2007-09-14 2007-09-14 Improved particle beam generator
PCT/GB2008/050050 WO2008090380A1 (fr) 2007-01-25 2008-01-24 Générateur amélioré de faisceau de particules

Publications (1)

Publication Number Publication Date
JP2010517233A true JP2010517233A (ja) 2010-05-20

Family

ID=39359016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009546818A Pending JP2010517233A (ja) 2007-01-25 2008-01-24 改良された粒子ビーム発生装置

Country Status (4)

Country Link
US (1) US20100187433A1 (fr)
EP (1) EP2126955A1 (fr)
JP (1) JP2010517233A (fr)
WO (1) WO2008090380A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012079699A (ja) * 2010-09-30 2012-04-19 Carl Zeiss Nts Gmbh 対象物を解析及び／又は処理する粒子ビームデバイス及び方法
JP2012195096A (ja) * 2011-03-15 2012-10-11 Canon Inc 荷電粒子線レンズおよびそれを用いた露光装置
WO2014185074A1 (fr) * 2013-05-15 2014-11-20 Okinawa Institute Of Science And Technology School Corporation Diffraction d'electrons de faible energie (leed) pour meb
JP6466020B1 (ja) * 2018-10-16 2019-02-06 株式会社Ｐｈｏｔｏ ｅｌｅｃｔｒｏｎ Ｓｏｕｌ 電子銃、電子線適用装置、電子銃による電子射出方法、および、電子ビームの焦点位置調整方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101384260B1 (ko) * 2005-12-05 2014-04-11 전자빔기술센터 주식회사 전자칼럼의 전자빔 포커싱 방법
JPWO2011046216A1 (ja) * 2009-10-16 2013-03-07 国立大学法人静岡大学 電子顕微鏡
GB201000952D0 (en) 2010-01-21 2010-03-10 Nfab Ltd A sub miniature low energy scanned beam microscope
TWI489222B (zh) * 2012-02-16 2015-06-21 Nuflare Technology Inc Electron beam rendering device and electron beam rendering method
US8859982B2 (en) * 2012-09-14 2014-10-14 Kla-Tencor Corporation Dual-lens-gun electron beam apparatus and methods for high-resolution imaging with both high and low beam currents
ES2479894B1 (es) * 2012-12-21 2015-10-13 Universidad Complutense De Madrid Dispositivo electroóptico y método para obtener haces iónicos de gran densidad y baja energía
US9824851B2 (en) * 2013-01-20 2017-11-21 William M. Tong Charge drain coating for electron-optical MEMS
JP6383228B2 (ja) * 2014-09-19 2018-08-29 株式会社ニューフレアテクノロジー マルチ荷電粒子ビームのビーム位置測定方法及びマルチ荷電粒子ビーム描画装置
JP6659281B2 (ja) * 2015-09-08 2020-03-04 株式会社日立ハイテクサイエンス 集束イオンビーム装置
US10784078B2 (en) * 2018-10-31 2020-09-22 Bruker Axs Gmbh Electron diffraction imaging system for determining molecular structure and conformation

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02160353A (ja) * 1988-07-22 1990-06-20 Internatl Business Mach Corp <Ibm> レンズ構造体中に自己整合した開口を形成する方法
JPH07192682A (ja) * 1993-12-27 1995-07-28 Agency Of Ind Science & Technol 多重電子ビーム照射装置および照射方法
JPH07312193A (ja) * 1994-05-17 1995-11-28 Nissin Electric Co Ltd イオン注入装置用の可変絞り装置
JP2001312954A (ja) * 2000-04-28 2001-11-09 Sharp Corp 電子源及びその製造方法
JP2005530314A (ja) * 2002-06-15 2005-10-06 エヌエフエイビー・リミテッド 粒子ビーム発生装置
JP2006134638A (ja) * 2004-11-04 2006-05-25 Univ Waseda 電子光学装置用電子ビーム源

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US4883968A (en) * 1988-06-03 1989-11-28 Eaton Corporation Electron cyclotron resonance ion source
US5945677A (en) * 1998-04-10 1999-08-31 The Regents Of The University Of California Focused ion beam system
JP2000252207A (ja) * 1998-08-19 2000-09-14 Ims Ionen Mikrofab Syst Gmbh 粒子線マルチビームリソグラフイー
JP2002530833A (ja) * 1998-11-24 2002-09-17 アプライド マテリアルズ インコーポレイテッド マイクロカラムの効率的な二次電子収集用検出器配列
US6369385B1 (en) * 1999-05-05 2002-04-09 Applied Materials, Inc. Integrated microcolumn and scanning probe microscope arrays
US20020125440A1 (en) * 2001-03-07 2002-09-12 Applied Materials, Inc. Method for fabrication of silicon octopole deflectors and electron column employing same
US6815690B2 (en) * 2002-07-23 2004-11-09 Guardian Industries Corp. Ion beam source with coated electrode(s)
US7279686B2 (en) * 2003-07-08 2007-10-09 Biomed Solutions, Llc Integrated sub-nanometer-scale electron beam systems
DE602004031817D1 (de) * 2004-01-21 2011-04-28 Integrated Circuit Testing Strahlenoptische Komponente mit einer teilchenoptischen Linse
JP4959149B2 (ja) * 2005-05-02 2012-06-20 株式会社荏原製作所 試料検査装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02160353A (ja) * 1988-07-22 1990-06-20 Internatl Business Mach Corp <Ibm> レンズ構造体中に自己整合した開口を形成する方法
JPH07192682A (ja) * 1993-12-27 1995-07-28 Agency Of Ind Science & Technol 多重電子ビーム照射装置および照射方法
JPH07312193A (ja) * 1994-05-17 1995-11-28 Nissin Electric Co Ltd イオン注入装置用の可変絞り装置
JP2001312954A (ja) * 2000-04-28 2001-11-09 Sharp Corp 電子源及びその製造方法
JP2005530314A (ja) * 2002-06-15 2005-10-06 エヌエフエイビー・リミテッド 粒子ビーム発生装置
JP2006134638A (ja) * 2004-11-04 2006-05-25 Univ Waseda 電子光学装置用電子ビーム源

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012079699A (ja) * 2010-09-30 2012-04-19 Carl Zeiss Nts Gmbh 対象物を解析及び／又は処理する粒子ビームデバイス及び方法
JP2012195096A (ja) * 2011-03-15 2012-10-11 Canon Inc 荷電粒子線レンズおよびそれを用いた露光装置
WO2014185074A1 (fr) * 2013-05-15 2014-11-20 Okinawa Institute Of Science And Technology School Corporation Diffraction d'electrons de faible energie (leed) pour meb
KR20160005042A (ko) * 2013-05-15 2016-01-13 각코호진 오키나와가가쿠기쥬츠다이가쿠인 다이가쿠가쿠엔 Sem에 대한 leed
US9576770B2 (en) 2013-05-15 2017-02-21 Okinawa Institute Of Science And Technology School Corporation LEED for SEM
KR101702803B1 (ko) 2013-05-15 2017-02-22 각코호진 오키나와가가쿠기쥬츠다이가쿠인 다이가쿠가쿠엔 Sem에 대한 leed
JP6466020B1 (ja) * 2018-10-16 2019-02-06 株式会社Ｐｈｏｔｏ ｅｌｅｃｔｒｏｎ Ｓｏｕｌ 電子銃、電子線適用装置、電子銃による電子射出方法、および、電子ビームの焦点位置調整方法
WO2020079929A1 (fr) * 2018-10-16 2020-04-23 株式会社Ｐｈｏｔｏ ｅｌｅｃｔｒｏｎ Ｓｏｕｌ Canon à électrons, dispositif d'application de faisceau d'électrons, procédé d'émission d'électrons à l'aide d'un canon à électrons et procédé de réglage de position focale de faisceau d'électrons
JP2020064729A (ja) * 2018-10-16 2020-04-23 株式会社Ｐｈｏｔｏ ｅｌｅｃｔｒｏｎ Ｓｏｕｌ 電子銃、電子線適用装置、電子銃による電子射出方法、および、電子ビームの焦点位置調整方法
CN111937112A (zh) * 2018-10-16 2020-11-13 日商光电魂股份有限公司 电子枪、电子射线应用装置、使用电子枪的电子束射出方法以及电子束的焦点位置调整方法
US11195685B2 (en) 2018-10-16 2021-12-07 Photo Electron Soul Inc. Electron gun, electron beam applicator, method for releasing electrons using electron gun, and method for adjusting focal position of electron beam
CN111937112B (zh) * 2018-10-16 2023-11-28 日商光电魂股份有限公司 电子枪、电子射线应用装置以及电子束射出方法
TWI830770B (zh) * 2018-10-16 2024-02-01 日商光電魂股份有限公司 電子槍、電子射線應用裝置、使用電子槍的電子束射出方法以及電子束的焦點位置調整方法

Also Published As

Publication number Publication date
EP2126955A1 (fr) 2009-12-02
US20100187433A1 (en) 2010-07-29
WO2008090380A1 (fr) 2008-07-31

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