JP2010511162A - 調整可能なスペクトル感度を備えたビーム検出器 - Google Patents
調整可能なスペクトル感度を備えたビーム検出器 Download PDFInfo
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- JP2010511162A JP2010511162A JP2009538716A JP2009538716A JP2010511162A JP 2010511162 A JP2010511162 A JP 2010511162A JP 2009538716 A JP2009538716 A JP 2009538716A JP 2009538716 A JP2009538716 A JP 2009538716A JP 2010511162 A JP2010511162 A JP 2010511162A
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Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/28—Investigating the spectrum
- G01J3/30—Measuring the intensity of spectral lines directly on the spectrum itself
- G01J3/36—Investigating two or more bands of a spectrum by separate detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
- G01J3/465—Measurement of colour; Colour measuring devices, e.g. colorimeters taking into account the colour perception of the eye; using tristimulus detection
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
- G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
- G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
- G01J3/51—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors using colour filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
- G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
- G01J3/51—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors using colour filters
- G01J3/513—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors using colour filters having fixed filter-detector pairs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/04—Optical or mechanical part supplementary adjustable parts
- G01J1/0488—Optical or mechanical part supplementary adjustable parts with spectral filtering
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/46—Measurement of colour; Colour measuring devices, e.g. colorimeters
- G01J3/50—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors
- G01J2003/507—Measurement of colour; Colour measuring devices, e.g. colorimeters using electric radiation detectors the detectors being physically selective
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Light Receiving Elements (AREA)
- Spectrometry And Color Measurement (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006056579 | 2006-11-30 | ||
| DE102007012115A DE102007012115A1 (de) | 2006-11-30 | 2007-03-13 | Strahlungsdetektor |
| PCT/EP2007/063007 WO2008065170A1 (de) | 2006-11-30 | 2007-11-29 | Strahlungsdetektor mit einstellbarer spektraler empfindlichkeit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010511162A true JP2010511162A (ja) | 2010-04-08 |
| JP2010511162A5 JP2010511162A5 (enExample) | 2011-10-13 |
Family
ID=39110400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009538716A Pending JP2010511162A (ja) | 2006-11-30 | 2007-11-29 | 調整可能なスペクトル感度を備えたビーム検出器 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8274657B2 (enExample) |
| EP (1) | EP2054705A1 (enExample) |
| JP (1) | JP2010511162A (enExample) |
| KR (1) | KR101430030B1 (enExample) |
| CN (1) | CN101535785B (enExample) |
| DE (1) | DE102007012115A1 (enExample) |
| TW (1) | TWI365976B (enExample) |
| WO (1) | WO2008065170A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022003813A1 (ja) * | 2020-06-30 | 2022-01-06 | シャープ株式会社 | 電磁波センサ装置および表示装置 |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
| US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
| US7890055B1 (en) * | 2007-07-09 | 2011-02-15 | Everlokt Corporation | Touch field compound field detector personal ID |
| JP2010112808A (ja) * | 2008-11-05 | 2010-05-20 | Hioki Ee Corp | 光パワーメータ |
| JP2010112807A (ja) * | 2008-11-05 | 2010-05-20 | Hioki Ee Corp | 光パワーメータ |
| US8008613B2 (en) | 2009-05-05 | 2011-08-30 | Apple Inc. | Light sensing device having a color sensor and a clear sensor for infrared rejection |
| DE102009024069A1 (de) * | 2009-06-05 | 2010-12-09 | Osram Opto Semiconductors Gmbh | Optisches Beleuchtungsgerät und optisches Aufzeichnungsgerät |
| US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| EP2478560A4 (en) * | 2009-09-17 | 2014-06-18 | Sionyx Inc | LIGHT-SENSITIVE IMAGING DEVICES AND CORRESPONDING METHODS |
| US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| JP5333596B2 (ja) * | 2009-10-05 | 2013-11-06 | 株式会社島津製作所 | 放射線検出器 |
| US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
| CN106449684B (zh) | 2010-06-18 | 2019-09-27 | 西奥尼克斯公司 | 高速光敏设备及相关方法 |
| EP2684221A4 (en) | 2011-03-10 | 2014-08-20 | Sionyx Inc | THREE-DIMENSIONAL SENSORS, SYSTEMS AND RELATED METHODS |
| WO2012130280A1 (de) | 2011-03-29 | 2012-10-04 | Osram Opto Semiconductors Gmbh | Einheit zur bestimmung der art einer dominierenden lichtquelle mittels zweier fotodioden |
| US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
| CN103946867A (zh) | 2011-07-13 | 2014-07-23 | 西奥尼克斯公司 | 生物计量成像装置和相关方法 |
| US8865507B2 (en) | 2011-09-16 | 2014-10-21 | Sionyx, Inc. | Integrated visible and infrared imager devices and associated methods |
| US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
| JP6466346B2 (ja) | 2013-02-15 | 2019-02-06 | サイオニクス、エルエルシー | アンチブルーミング特性を有するハイダイナミックレンジcmos画像センサおよび関連づけられた方法 |
| WO2014151093A1 (en) | 2013-03-15 | 2014-09-25 | Sionyx, Inc. | Three dimensional imaging utilizing stacked imager devices and associated methods |
| US9209345B2 (en) | 2013-06-29 | 2015-12-08 | Sionyx, Inc. | Shallow trench textured regions and associated methods |
| US10281329B2 (en) * | 2017-06-14 | 2019-05-07 | Simmonds Precision Products, Inc. | Method and system for fast determination of the wavelength of a light beam |
| CN109556710B (zh) * | 2018-12-28 | 2024-04-16 | 浙江智慧照明技术有限公司 | 照明环境光传感器 |
| DE102019114537A1 (de) * | 2019-05-29 | 2020-12-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches sensorbauelement zur lichtmessung mit eingebauter redundanz |
| KR102774244B1 (ko) * | 2019-11-19 | 2025-03-05 | 삼성전자주식회사 | 스펙트럼을 분할하는 발광 소자 측정 장치, 및 이의 동작 방법 |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2920773A1 (de) * | 1979-05-22 | 1980-12-04 | Siemens Ag | Optoelektronischer sensor |
| JPS6336121A (ja) * | 1986-07-29 | 1988-02-16 | Minolta Camera Co Ltd | 測色センサ |
| JPH01233328A (ja) * | 1988-03-14 | 1989-09-19 | Agency Of Ind Science & Technol | 測光装置 |
| JPH03202732A (ja) * | 1989-06-13 | 1991-09-04 | Sharp Corp | カラーセンサ |
| JP2000066166A (ja) * | 1998-08-21 | 2000-03-03 | Mitsubishi Electric Corp | 投写型液晶表示装置 |
| DE10101457A1 (de) * | 2001-01-10 | 2002-07-18 | Infineon Technologies Ag | Optoelektronisches System zur Detektion elektromagnetischer Strahlung |
| EP1521069A2 (de) * | 2003-10-02 | 2005-04-06 | MAZet GmbH | Photosensor zur normgerechten Farbmessung |
| JP2006108675A (ja) * | 2004-09-30 | 2006-04-20 | Osram Opto Semiconductors Gmbh | ビーム検出器 |
| JP2006189291A (ja) * | 2005-01-05 | 2006-07-20 | Konica Minolta Sensing Inc | 測光装置及び単色光の測光方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55104725A (en) | 1979-02-05 | 1980-08-11 | Nec Corp | Wave-length discrimination type photo-detector |
| JPS59227171A (ja) | 1983-06-08 | 1984-12-20 | Oki Electric Ind Co Ltd | カラ−センサ |
| US4758734A (en) | 1984-03-13 | 1988-07-19 | Nec Corporation | High resolution image sensor array using amorphous photo-diodes |
| JPH0612808B2 (ja) | 1984-07-13 | 1994-02-16 | 日本電気株式会社 | 固体撮像装置の製造方法 |
| DE4024011A1 (de) * | 1990-07-28 | 1992-01-30 | Gossen Gmbh | Verfahren und vorrichtung zur elektronischen belichtungsmessung |
| JPH04280678A (ja) | 1991-03-08 | 1992-10-06 | Nec Corp | 固体撮像素子 |
| DE4143284A1 (de) | 1991-12-30 | 1992-10-01 | Klaus Eberhard Engel | Integrierter halbleitersensor fuer spektrometer |
| GB2277405A (en) | 1993-04-22 | 1994-10-26 | Sharp Kk | Semiconductor colour display or detector array |
| US5362969A (en) | 1993-04-23 | 1994-11-08 | Luxtron Corporation | Processing endpoint detecting technique and detector structure using multiple radiation sources or discrete detectors |
| EP0645826A3 (en) | 1993-09-23 | 1995-05-17 | Siemens Comp Inc | Monolithic multi-channel optocoupler. |
| WO1997012212A1 (de) * | 1995-09-27 | 1997-04-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Multispektralsensorvorrichtung |
| CA2171574C (en) * | 1996-03-12 | 2000-10-03 | Brian W. Tansley | Photometric measurement apparatus |
| US6307660B1 (en) | 1997-01-28 | 2001-10-23 | Tellium, Inc. | Optical receiver particularly useful for a multi-wavelength receiver array |
| US6359274B1 (en) | 1999-01-25 | 2002-03-19 | Gentex Corporation | Photodiode light sensor |
| US6407439B1 (en) | 1999-08-19 | 2002-06-18 | Epitaxial Technologies, Llc | Programmable multi-wavelength detector array |
| US7065035B1 (en) | 1999-10-25 | 2006-06-20 | Matsushita Electric Industrial Co., Ltd. | Optical multilayer disk, multiwavelength light source, and optical system using them |
| US6380532B1 (en) | 2000-04-19 | 2002-04-30 | Eaton Corporation | Optical object detector with multiple photodetectors |
| GB2381950A (en) | 2001-11-06 | 2003-05-14 | Denselight Semiconductors Pte | Field effect based photodetector array responsivity control |
| TW499577B (en) | 2001-12-07 | 2002-08-21 | Univ Yuan Ze | Coiled optical fiber wavelength - power converter |
| DE10345410A1 (de) | 2003-09-30 | 2005-05-04 | Osram Opto Semiconductors Gmbh | Strahlungsdetektor |
| DE102004037020B4 (de) * | 2003-09-30 | 2021-10-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsdetektor zur Detektion von Strahlung gemäß einer vorgegebenen spektralen Empfindlichkeitsverteilung |
| KR20130036337A (ko) | 2004-03-31 | 2013-04-11 | 오스람 옵토 세미컨덕터스 게엠베하 | 방사선 검출기 |
| DE102005001280B4 (de) * | 2004-09-30 | 2022-03-03 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsdetektor |
| EP1667246A1 (en) * | 2004-12-03 | 2006-06-07 | ETeCH AG | A multi-colour sensitive device for colour image sensing |
| DE102005043918B4 (de) | 2005-05-30 | 2014-12-04 | Osram Opto Semiconductors Gmbh | Detektoranordnung und Verfahren zur Bestimmung spektraler Anteile in einer auf eine Detektoranordnung einfallenden Strahlung |
-
2007
- 2007-03-13 DE DE102007012115A patent/DE102007012115A1/de not_active Ceased
- 2007-11-26 TW TW096144735A patent/TWI365976B/zh active
- 2007-11-29 KR KR1020097013679A patent/KR101430030B1/ko active Active
- 2007-11-29 EP EP07847523A patent/EP2054705A1/de not_active Ceased
- 2007-11-29 CN CN2007800414217A patent/CN101535785B/zh active Active
- 2007-11-29 WO PCT/EP2007/063007 patent/WO2008065170A1/de not_active Ceased
- 2007-11-29 US US12/516,831 patent/US8274657B2/en active Active
- 2007-11-29 JP JP2009538716A patent/JP2010511162A/ja active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2920773A1 (de) * | 1979-05-22 | 1980-12-04 | Siemens Ag | Optoelektronischer sensor |
| JPS6336121A (ja) * | 1986-07-29 | 1988-02-16 | Minolta Camera Co Ltd | 測色センサ |
| JPH01233328A (ja) * | 1988-03-14 | 1989-09-19 | Agency Of Ind Science & Technol | 測光装置 |
| JPH03202732A (ja) * | 1989-06-13 | 1991-09-04 | Sharp Corp | カラーセンサ |
| JP2000066166A (ja) * | 1998-08-21 | 2000-03-03 | Mitsubishi Electric Corp | 投写型液晶表示装置 |
| DE10101457A1 (de) * | 2001-01-10 | 2002-07-18 | Infineon Technologies Ag | Optoelektronisches System zur Detektion elektromagnetischer Strahlung |
| EP1521069A2 (de) * | 2003-10-02 | 2005-04-06 | MAZet GmbH | Photosensor zur normgerechten Farbmessung |
| JP2006108675A (ja) * | 2004-09-30 | 2006-04-20 | Osram Opto Semiconductors Gmbh | ビーム検出器 |
| JP2006189291A (ja) * | 2005-01-05 | 2006-07-20 | Konica Minolta Sensing Inc | 測光装置及び単色光の測光方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022003813A1 (ja) * | 2020-06-30 | 2022-01-06 | シャープ株式会社 | 電磁波センサ装置および表示装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2054705A1 (de) | 2009-05-06 |
| US20100097609A1 (en) | 2010-04-22 |
| TW200844412A (en) | 2008-11-16 |
| CN101535785B (zh) | 2011-12-28 |
| WO2008065170A1 (de) | 2008-06-05 |
| CN101535785A (zh) | 2009-09-16 |
| KR101430030B1 (ko) | 2014-08-14 |
| US8274657B2 (en) | 2012-09-25 |
| DE102007012115A1 (de) | 2008-06-05 |
| KR20090098850A (ko) | 2009-09-17 |
| TWI365976B (en) | 2012-06-11 |
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