JP2010509171A - ナノワイヤー成長用システム及び方法 - Google Patents

ナノワイヤー成長用システム及び方法 Download PDF

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JP2010509171A
JP2010509171A JP2009536280A JP2009536280A JP2010509171A JP 2010509171 A JP2010509171 A JP 2010509171A JP 2009536280 A JP2009536280 A JP 2009536280A JP 2009536280 A JP2009536280 A JP 2009536280A JP 2010509171 A JP2010509171 A JP 2010509171A
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nanowire
nanowires
temperature
growth
substrate
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JP2010509171A5 (https=
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デヴィッド・テイラー
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ナノシス・インク．
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H10P14/274—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition using seed materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/279—Vapour-liquid-solid growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3462—Nanowires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3464—Nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2913—Rod, strand, filament or fiber

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
JP2009536280A 2006-11-07 2007-11-06 ナノワイヤー成長用システム及び方法 Pending JP2010509171A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US85745006P 2006-11-07 2006-11-07
PCT/US2007/023434 WO2008057558A2 (en) 2006-11-07 2007-11-06 Systems and methods for nanowire growth

Publications (2)

Publication Number Publication Date
JP2010509171A true JP2010509171A (ja) 2010-03-25
JP2010509171A5 JP2010509171A5 (https=) 2010-12-24

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JP2009536280A Pending JP2010509171A (ja) 2006-11-07 2007-11-06 ナノワイヤー成長用システム及び方法

Country Status (6)

Country Link
US (2) US7776760B2 (https=)
EP (1) EP2082419A4 (https=)
JP (1) JP2010509171A (https=)
KR (1) KR20090087467A (https=)
CN (1) CN101573778B (https=)
WO (1) WO2008057558A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010076044A (ja) * 2008-09-26 2010-04-08 National Institute For Materials Science 有機高分子ナノワイヤーとその製造方法
JP2013527831A (ja) * 2010-05-05 2013-07-04 シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ 新規な前駆体から生成されたナノワイヤおよびその製造方法

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9056783B2 (en) 1998-12-17 2015-06-16 Hach Company System for monitoring discharges into a waste water collection system
US7454295B2 (en) 1998-12-17 2008-11-18 The Watereye Corporation Anti-terrorism water quality monitoring system
US8958917B2 (en) 1998-12-17 2015-02-17 Hach Company Method and system for remote monitoring of fluid quality and treatment
US8920619B2 (en) 2003-03-19 2014-12-30 Hach Company Carbon nanotube sensor
AU2008275956A1 (en) * 2007-07-19 2009-01-22 California Institute Of Technology Structures of ordered arrays of semiconductors
KR20100072220A (ko) * 2007-08-28 2010-06-30 캘리포니아 인스티튜트 오브 테크놀로지 중합체―임베드된 반도체 로드 어레이
KR101445877B1 (ko) * 2008-03-24 2014-09-29 삼성전자주식회사 산화아연 나노와이어의 제조방법
US8143143B2 (en) 2008-04-14 2012-03-27 Bandgap Engineering Inc. Process for fabricating nanowire arrays
KR101475524B1 (ko) * 2008-08-05 2014-12-23 삼성전자주식회사 실리콘 풍부산화물을 포함하는 나노와이어 및 그의제조방법
US8029851B2 (en) * 2008-08-29 2011-10-04 Korea University Research And Business Foundation Nanowire fabrication
US8247325B2 (en) * 2008-10-10 2012-08-21 Uchicago Argonne, Llc Direct growth of metal nanoplates on semiconductor substrates
CN101649491A (zh) * 2009-07-17 2010-02-17 宁波工程学院 一种定向生长SiC单晶纳米线阵列的方法
WO2011025733A1 (en) * 2009-08-24 2011-03-03 International Solartech, Inc. Nanowire-based photovoltaic energy conversion devices and related fabrication methods
US20110076841A1 (en) * 2009-09-30 2011-03-31 Kahen Keith B Forming catalyzed ii-vi semiconductor nanowires
US8274138B2 (en) * 2009-09-30 2012-09-25 Eastman Kodak Company II-VI semiconductor nanowires
WO2011066529A2 (en) * 2009-11-30 2011-06-03 California Institute Of Technology Three-dimensional patterning methods and related devices
US9263612B2 (en) 2010-03-23 2016-02-16 California Institute Of Technology Heterojunction wire array solar cells
CN107090593A (zh) * 2010-05-11 2017-08-25 昆南诺股份有限公司 线的气相合成
US8680510B2 (en) * 2010-06-28 2014-03-25 International Business Machines Corporation Method of forming compound semiconductor
FR2965280A1 (fr) * 2010-09-29 2012-03-30 Commissariat Energie Atomique Croissance de fils de silicium dope au bore avec controle du diametre et de la densite
JP5002703B2 (ja) * 2010-12-08 2012-08-15 株式会社東芝 半導体発光素子
US8834831B2 (en) 2011-01-11 2014-09-16 The United States Of America As Represented By The Secretary Of The Army Controlling morpholoy of titanium oxide using designed peptides
EP3978426A1 (en) 2011-07-26 2022-04-06 OneD Material, Inc. Nanostructured battery active materials and methods of producing same
KR102323287B1 (ko) 2011-10-05 2021-11-05 원드 매터리얼 인코포레이티드 리튬 이온 배터리용 실리콘 나노구조체 활물질, 및 그에 관련된 공정, 조성물, 구성요소 및 디바이스
US10026560B2 (en) 2012-01-13 2018-07-17 The California Institute Of Technology Solar fuels generator
US9476129B2 (en) 2012-04-02 2016-10-25 California Institute Of Technology Solar fuels generator
US9545612B2 (en) 2012-01-13 2017-01-17 California Institute Of Technology Solar fuel generator
US10090425B2 (en) 2012-02-21 2018-10-02 California Institute Of Technology Axially-integrated epitaxially-grown tandem wire arrays
US9947816B2 (en) 2012-04-03 2018-04-17 California Institute Of Technology Semiconductor structures for fuel generation
CN103854971B (zh) * 2012-12-04 2016-10-05 中芯国际集成电路制造(上海)有限公司 纳米线的制造方法、纳米线场效应晶体管的制造方法
FR3000612B1 (fr) * 2012-12-28 2016-05-06 Commissariat Energie Atomique Dispositif optoelectronique a microfils ou nanofils
US9553223B2 (en) 2013-01-24 2017-01-24 California Institute Of Technology Method for alignment of microwires
DE102013201608A1 (de) 2013-01-31 2014-07-31 Wacker Chemie Ag Verfahren zur Abscheidung von polykristallinem Silicium
EP3035374B1 (en) * 2013-08-13 2022-10-05 Japan Science and Technology Agency Tunnel field-effect transistor, method for manufacturing same, and switch element
US10276370B2 (en) * 2014-12-29 2019-04-30 Georgia Tech Research Corporation Methods for the continuous, large-scale manufacture of functional nanostructures
CN105185879B (zh) * 2015-10-10 2017-08-18 厦门市三安光电科技有限公司 一种三维掺杂的氮化物发光二极管及其制作方法
ES3032418T3 (en) 2016-07-15 2025-07-18 Oned Mat Inc Manufacturing apparatus and method for making silicon nanowires on carbon based powders for use in batteries
US11139402B2 (en) 2018-05-14 2021-10-05 Synopsys, Inc. Crystal orientation engineering to achieve consistent nanowire shapes
CN109962010B (zh) * 2018-11-08 2022-05-27 中国科学院半导体研究所 圆晶级大面积半导体纳米片及其制备方法
US11264458B2 (en) 2019-05-20 2022-03-01 Synopsys, Inc. Crystal orientation engineering to achieve consistent nanowire shapes
US11515147B2 (en) 2019-12-09 2022-11-29 Micron Technology, Inc. Material deposition systems, and related methods
KR102271030B1 (ko) * 2019-12-20 2021-07-01 서울대학교산학협력단 선택적 영역 성장을 이용한 cmos 소자의 제조 방법
CN111893454B (zh) * 2020-07-08 2023-03-14 陕西科技大学 一种常压下锗锡纳米材料的制备方法
US20230416095A1 (en) * 2022-06-24 2023-12-28 Cvd Equipment Corporation Nanomaterial manufacturing methods
CN118223115B (zh) * 2024-05-24 2024-07-19 西北大学 一种二维匕首状GeSe纳米线阵列的制备方法及光电应用
CN118908783A (zh) * 2024-08-16 2024-11-08 长春师范大学 采用农业废弃物生物发酵的蓝莓无机肥料的生产工艺

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005119753A2 (en) * 2004-04-30 2005-12-15 Nanosys, Inc. Systems and methods for nanowire growth and harvesting

Family Cites Families (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5332910A (en) 1991-03-22 1994-07-26 Hitachi, Ltd. Semiconductor optical device with nanowhiskers
US5196396A (en) 1991-07-16 1993-03-23 The President And Fellows Of Harvard College Method of making a superconducting fullerene composition by reacting a fullerene with an alloy containing alkali metal
US5274602A (en) 1991-10-22 1993-12-28 Florida Atlantic University Large capacity solid-state memory
WO1993010564A1 (en) 1991-11-22 1993-05-27 The Regents Of The University Of California Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers
US5505928A (en) 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US5252835A (en) 1992-07-17 1993-10-12 President And Trustees Of Harvard College Machining oxide thin-films with an atomic force microscope: pattern and object formation on the nanometer scale
US5338430A (en) 1992-12-23 1994-08-16 Minnesota Mining And Manufacturing Company Nanostructured electrode membranes
US6048616A (en) 1993-04-21 2000-04-11 Philips Electronics N.A. Corp. Encapsulated quantum sized doped semiconductor particles and method of manufacturing same
AU8070294A (en) 1993-07-15 1995-02-13 President And Fellows Of Harvard College Extended nitride material comprising beta -c3n4
US5962863A (en) 1993-09-09 1999-10-05 The United States Of America As Represented By The Secretary Of The Navy Laterally disposed nanostructures of silicon on an insulating substrate
US5512131A (en) 1993-10-04 1996-04-30 President And Fellows Of Harvard College Formation of microstamped patterns on surfaces and derivative articles
US20030044777A1 (en) 1993-10-28 2003-03-06 Kenneth L. Beattie Flowthrough devices for multiple discrete binding reactions
WO1996029629A2 (en) 1995-03-01 1996-09-26 President And Fellows Of Harvard College Microcontact printing on surfaces and derivative articles
US5674592A (en) 1995-05-04 1997-10-07 Minnesota Mining And Manufacturing Company Functionalized nanostructured films
US6190634B1 (en) 1995-06-07 2001-02-20 President And Fellows Of Harvard College Carbide nanomaterials
US5690807A (en) 1995-08-03 1997-11-25 Massachusetts Institute Of Technology Method for producing semiconductor particles
JP3478012B2 (ja) 1995-09-29 2003-12-10 ソニー株式会社 薄膜半導体装置の製造方法
US5869405A (en) 1996-01-03 1999-02-09 Micron Technology, Inc. In situ rapid thermal etch and rapid thermal oxidation
US5897945A (en) 1996-02-26 1999-04-27 President And Fellows Of Harvard College Metal oxide nanorods
US6036774A (en) 1996-02-26 2000-03-14 President And Fellows Of Harvard College Method of producing metal oxide nanorods
EP0792688A1 (en) 1996-03-01 1997-09-03 Dow Corning Corporation Nanoparticles of silicon oxide alloys
US5640343A (en) 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
JPH10106960A (ja) 1996-09-25 1998-04-24 Sony Corp 量子細線の製造方法
US5976957A (en) 1996-10-28 1999-11-02 Sony Corporation Method of making silicon quantum wires on a substrate
US5997832A (en) 1997-03-07 1999-12-07 President And Fellows Of Harvard College Preparation of carbide nanorods
US6413489B1 (en) 1997-04-15 2002-07-02 Massachusetts Institute Of Technology Synthesis of nanometer-sized particles by reverse micelle mediated techniques
JPH1186719A (ja) 1997-09-05 1999-03-30 Yamaha Corp 電界放射型素子の製造方法
US6004444A (en) 1997-11-05 1999-12-21 The Trustees Of Princeton University Biomimetic pathways for assembling inorganic thin films and oriented mesoscopic silicate patterns through guided growth
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US5990479A (en) 1997-11-25 1999-11-23 Regents Of The University Of California Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6159742A (en) 1998-06-05 2000-12-12 President And Fellows Of Harvard College Nanometer-scale microscopy probes
US6235675B1 (en) 1998-09-22 2001-05-22 Idaho Research Foundation, Inc. Methods of forming materials containing carbon and boron, methods of forming catalysts, filaments comprising boron and carbon, and catalysts
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6256767B1 (en) 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6815218B1 (en) 1999-06-09 2004-11-09 Massachusetts Institute Of Technology Methods for manufacturing bioelectronic devices
WO2001003208A1 (en) 1999-07-02 2001-01-11 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6438025B1 (en) 1999-09-08 2002-08-20 Sergei Skarupo Magnetic memory device
US6340822B1 (en) 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
US6196396B1 (en) * 1999-10-10 2001-03-06 Erith Lestine Bennett Apparel accessories rack
RU2173003C2 (ru) 1999-11-25 2001-08-27 Септре Электроникс Лимитед Способ образования кремниевой наноструктуры, решетки кремниевых квантовых проводков и основанных на них устройств
KR100480773B1 (ko) 2000-01-07 2005-04-06 삼성에스디아이 주식회사 카본 나노 튜브를 이용한 3극 전계방출소자의 제작방법
US6248674B1 (en) 2000-02-02 2001-06-19 Hewlett-Packard Company Method of aligning nanowires
US6225198B1 (en) 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
US6306736B1 (en) 2000-02-04 2001-10-23 The Regents Of The University Of California Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process
US7335603B2 (en) 2000-02-07 2008-02-26 Vladimir Mancevski System and method for fabricating logic devices comprising carbon nanotube transistors
EP1276824A4 (en) 2000-04-21 2005-03-16 Stc Unm PROTOTYPING OF STRUCTURED, FUNCTIONAL NANOSTRUCTURES
KR100360476B1 (ko) 2000-06-27 2002-11-08 삼성전자 주식회사 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법
WO2002003430A2 (en) 2000-06-29 2002-01-10 California Institute Of Technology Aerosol process for fabricating discontinuous floating gate microelectronic devices
EP1299914B1 (de) 2000-07-04 2008-04-02 Qimonda AG Feldeffekttransistor
DE10134866B4 (de) 2000-07-18 2005-08-11 Lg Electronics Inc. Verfahren zum horizontalen Wachsenlassen von Kohlenstoff-Nanoröhren und Feldeffekttransistor, der die durch das Verfahren gewachsenen Kohlenstoff-Nanoröhren verwendet
US6447663B1 (en) 2000-08-01 2002-09-10 Ut-Battelle, Llc Programmable nanometer-scale electrolytic metal deposition and depletion
CN101887935B (zh) 2000-08-22 2013-09-11 哈佛学院董事会 掺杂的拉长半导体,其生长,包含这类半导体的器件及其制造
US20060175601A1 (en) * 2000-08-22 2006-08-10 President And Fellows Of Harvard College Nanoscale wires and related devices
US7301199B2 (en) 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
KR20030055346A (ko) 2000-12-11 2003-07-02 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
TW552592B (en) 2001-01-23 2003-09-11 Quantum Polymer Technologies I Conductive polymer materials and methods for their manufacture and use
AU2002251946A1 (en) 2001-02-14 2002-08-28 Science And Technology Corporation @ Unm Nanostructured devices for separation and analysis
US6593065B2 (en) 2001-03-12 2003-07-15 California Institute Of Technology Method of fabricating nanometer-scale flowchannels and trenches with self-aligned electrodes and the structures formed by the same
US7189435B2 (en) 2001-03-14 2007-03-13 University Of Massachusetts Nanofabrication
US6797336B2 (en) 2001-03-22 2004-09-28 Ambp Tech Corporation Multi-component substances and processes for preparation thereof
EP1374309A1 (en) 2001-03-30 2004-01-02 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US7084507B2 (en) 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
US6858455B2 (en) 2001-05-25 2005-02-22 Ut-Battelle, Llc Gated fabrication of nanostructure field emission cathode material within a device
US6896864B2 (en) 2001-07-10 2005-05-24 Battelle Memorial Institute Spatial localization of dispersed single walled carbon nanotubes into useful structures
NZ513637A (en) 2001-08-20 2004-02-27 Canterprise Ltd Nanoscale electronic devices & fabrication methods
JP2005501404A (ja) 2001-08-30 2005-01-13 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 磁気抵抗装置および電子装置
US6821847B2 (en) * 2001-10-02 2004-11-23 Mosel Vitelic, Inc. Nonvolatile memory structures and fabrication methods
US6773616B1 (en) 2001-11-13 2004-08-10 Hewlett-Packard Development Company, L.P. Formation of nanoscale wires
AU2002364157A1 (en) 2001-12-12 2003-06-23 The Pennsylvania State University Chemical reactor templates: sacrificial layer fabrication and template use
US7049625B2 (en) 2002-03-18 2006-05-23 Max-Planck-Gesellschaft Zur Fonderung Der Wissenschaften E.V. Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell
US20040026684A1 (en) 2002-04-02 2004-02-12 Nanosys, Inc. Nanowire heterostructures for encoding information
US6872645B2 (en) 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US20030189202A1 (en) 2002-04-05 2003-10-09 Jun Li Nanowire devices and methods of fabrication
US6831017B1 (en) 2002-04-05 2004-12-14 Integrated Nanosystems, Inc. Catalyst patterning for nanowire devices
US6760245B2 (en) 2002-05-01 2004-07-06 Hewlett-Packard Development Company, L.P. Molecular wire crossbar flash memory
US6815750B1 (en) 2002-05-22 2004-11-09 Hewlett-Packard Development Company, L.P. Field effect transistor with channel extending through layers on a substrate
US7358121B2 (en) 2002-08-23 2008-04-15 Intel Corporation Tri-gate devices and methods of fabrication
WO2004027822A2 (en) 2002-09-05 2004-04-01 Nanosys, Inc. Oriented nanostructures and methods of preparing
WO2004023527A2 (en) 2002-09-05 2004-03-18 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
EP1537445B1 (en) 2002-09-05 2012-08-01 Nanosys, Inc. Nanocomposites
US7115916B2 (en) 2002-09-26 2006-10-03 International Business Machines Corporation System and method for molecular optical emission
WO2004032191A2 (en) 2002-09-30 2004-04-15 Nanosys, Inc. Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US7067867B2 (en) 2002-09-30 2006-06-27 Nanosys, Inc. Large-area nonenabled macroelectronic substrates and uses therefor
CA2499944A1 (en) 2002-09-30 2004-04-15 Nanosys, Inc. Integrated displays using nanowire transistors
US7051945B2 (en) 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
CA2499965C (en) 2002-09-30 2013-03-19 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
KR20060079209A (ko) 2003-09-04 2006-07-05 나노시스, 인크. 나노결정의 처리 방법과, 나노결정을 포함하는 조성물,장치 및 시스템
US7067328B2 (en) 2003-09-25 2006-06-27 Nanosys, Inc. Methods, devices and compositions for depositing and orienting nanostructures
US7628974B2 (en) 2003-10-22 2009-12-08 International Business Machines Corporation Control of carbon nanotube diameter using CVD or PECVD growth
US7208094B2 (en) * 2003-12-17 2007-04-24 Hewlett-Packard Development Company, L.P. Methods of bridging lateral nanowires and device using same
US7018549B2 (en) 2003-12-29 2006-03-28 Intel Corporation Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticle
US20050279274A1 (en) 2004-04-30 2005-12-22 Chunming Niu Systems and methods for nanowire growth and manufacturing
US7129154B2 (en) * 2004-05-28 2006-10-31 Agilent Technologies, Inc Method of growing semiconductor nanowires with uniform cross-sectional area using chemical vapor deposition
EP1807919A4 (en) * 2004-11-02 2011-05-04 Nantero Inc NANORON ELEMENTS FOR PROTECTION AGAINST ELECTROSTATIC DISCHARGE AND CORRESPONDING NON-VOLATILE AND VOLATILE NANOPHONE SWITCHES
US7087920B1 (en) * 2005-01-21 2006-08-08 Hewlett-Packard Development Company, L.P. Nanowire, circuit incorporating nanowire, and methods of selecting conductance of the nanowire and configuring the circuit
US20070037365A1 (en) 2005-08-15 2007-02-15 Ranganath Tirumala R Semiconductor nanostructures and fabricating the same
US20070186627A1 (en) * 2006-02-10 2007-08-16 Sungsoo Yi High aspect ratio AFM probe and method of making

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005119753A2 (en) * 2004-04-30 2005-12-15 Nanosys, Inc. Systems and methods for nanowire growth and harvesting

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010076044A (ja) * 2008-09-26 2010-04-08 National Institute For Materials Science 有機高分子ナノワイヤーとその製造方法
JP2013527831A (ja) * 2010-05-05 2013-07-04 シュパウント プライベート ソシエテ ア レスポンサビリテ リミテ 新規な前駆体から生成されたナノワイヤおよびその製造方法

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