JP2010507258A - 高分子基材上に付着金属のパターンを形成する方法 - Google Patents
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Abstract
Description
添付の図面と関連して、以下の本発明の様々な実施形態の「発明を実施するための形態」を検討することで、本発明はより完全に理解され得る。
基材の調製
厚さ250μmの透明なポリカーボネートのフィルム(ゼネラル・エレクトリック・カンパニー(General Electric Company)(コネチカット州フェアフィールド(Fairfield))のGEプラスチックス(GE Plastics)部門(マサチューセッツ州ピッツフィールド(Pittsfield))から商標名レクサン(Lexan)で入手可能)を、隆起した正方形によって補完される陥凹グリッド線のレリーフパターンで熱的にエンボス加工した。エンボス加工工具は、溶融石英の直径10cmの円形プレートから、フォトリソグラフィ及び反応性イオンエッチング法を用いて作製された。前記工具は、高さが約10μmであり、正方形のグリッドの線を200μmのピッチで画定する、幅10μmの隆起部を含んだ。エンボス加工は、モデルオートM(Model AUTO M)積層プレス(カーバー社(Carver, Inc.)、インディアナ州ウォバシュ(Wabash)より入手可能)を用いて、前記エンボス加工工具をポリカーボネートフィルムに176℃で15分間、10,000ニュートンの力で押圧することによって実行した。エンボス加工されたフィルムは、深さが約10μmであり、正方形のグリッドの線を200μmのピッチで画定する、幅10μmのチャネルを包含した。エンボス加工された後、前記ポリカーボネートフィルムは、最初に蒸発によって15オングストロームのチタンで金属化されてタイ層を形成し、続いて熱的蒸発器(カート J.レスカー社(Kurt J. Lesker Co.)、ペンシルバニア州ピッツバーグ(Pittsburgh)より入手可能)を用いて600オングストロームの金層で金属化された。
ポリジメチルシロキサン(PDMS、ダウ・コーニング・コーポレーション(Dow Corning Corporation)(ミシガン州ミッドランド(Midland))からのシルガード(Sylgard)(登録商標))184の本質的に形状のないのプレート2枚を、1つのケイ素結晶に対してキャスティングした。1つのプレートは、プレートを飽和するため、キャスティング平坦面を空気に曝した状態で、オクタデカンチオールの5mmolエタノール溶液に2日間浸漬した。その後、第2のプレートを、第1のプレートと手で接触させて、第1のプレートの上に30分間配置して、第2のプレートにインキ付着面を作った。
機能化されていない幅10μmの陥凹を有するSAM印刷された基材を、無電解銅めっき溶液(M−カパー(M-COPPER)85C コネチカット州ウォーターベリー(Waterbury)のマクダーミッド社(Mac Dermid, Inc.))中に配置した。銅は、機能化されていない幅10μmの陥凹のみに、無電解及び選択的にめっきされた。無電解金属化されたフィルムを、続いて、フィルムを低圧石英水銀蒸気ランプを照明しながら酸素に曝露することでUVオゾン洗浄し、それによってSAMを、隆起した、銅非付着領域から除去した。金を、ヨウ素(0.5M)及びヨウ化カリウム(0.5M)からなる水溶液を含有する浴を用いて銅非付着領域からエッチング除去した。
Claims (20)
- 高分子フィルム基材上に付着金属のパターンを形成する方法であって、
陥凹領域と、隣接する隆起領域とを含むレリーフパターンを備える主表面を有する高分子フィルム基材を提供する工程と、
コーティングされた高分子フィルム基材を形成するために第1の材料を前記高分子フィルム基材の主表面に付着する工程と、
機能化された隆起領域と機能化されていない陥凹領域とを形成するため、前記コーティングされた高分子フィルム基材の隆起領域上に機能性材料の層を選択的に形成する工程と、
付着金属を前記機能化されていない陥凹領域に選択的に無電解沈着し、付着金属のパターンを形成された高分子フィルム基材を形成する工程と、
を含む、方法。 - 前記提供する工程が、透明な高分子フィルム基材の提供を含む、請求項1に記載の方法。
- 前記提供する工程が、ポリオレフィン、ポリアミド、ポリイミド、ポリカーボネート、ポリエステル、ポリアクリレート、ポリメタクリレート、及び液晶ポリマーの群から選択されるポリマーを含む高分子フィルム基材の提供を含む、請求項1に記載の方法。
- 前記第1の材料を付着する工程が、金、銀、パラジウム、白金、ロジウム、銅、ニッケル、鉄、インジウム、スズ、並びにこれらの混合物、合金、及び化合物の群から選択される金属を高分子フィルム基材上に付着することを含む、請求項1に記載の方法。
- 前記形成する工程が、コーティングされた高分子フィルム基材の隆起領域上に自己構築単層の層を選択的に形成することを含む、請求項1に記載の方法。
- 前記形成する工程が、コーティングされた高分子フィルム基材の隆起領域上に機能性材料をエラストマープレートで選択的に適用することを含む、請求項1に記載の方法。
- 前記形成する工程が、コーティングされた高分子フィルム基材の隆起領域上に、機能性材料を、形状のないエラストマープレートで選択的に適用することを含む、請求項1に記載の方法。
- 機械工具を用いて高分子フィルム基材を成形又はエンボス加工することによってレリーフ構造を備える主表面を形成することを更に含む、請求項1に記載の方法。
- 前記無電解沈着工程が、銅、ニッケル、金、銀、パラジウム、ロジウム、ルテニウム、スズ、コバルト、及び亜鉛からなる群から選択される付着金属を無電解沈着することを含む、請求項1に記載の方法。
- 前記無電解沈着工程の後で、機能性材料及び第1の材料を隆起領域から除去することを更に含む、請求項1に記載の方法。
- 前記形成する工程が、隆起領域上に自己構築単層を選択的に形成することを含み、前記自己構築単層が有機硫黄化合物、シラン、ホスホン酸、ベンゾトリアゾール、及びカルボン酸からなる群から選択される化学種を含む、請求項1に記載の方法。
- 前記高分子フィルム基材上に付着金属のパターンを形成する方法が、ロール・ツー・ロール加工装置で実行される、請求項1に記載の方法。
- 前記レリーフパターンが、それぞれが近接する陥凹領域によって囲まれた別個の隆起領域の配列を含む、請求項1に記載の方法。
- 前記レリーフパターンが、近接する隆起領域によって互いに隔離されている線状トレースの形態の複数の陥凹領域を含む、請求項2に記載の方法。
- 前記線状トレースが、0.25マイクロメートル〜50マイクロメートルの幅及び0.1マイクロメートル〜10マイクロメートルの深さを有する、請求項14に記載の方法。
- 隆起領域と、隣接する陥凹領域と
を含むレリーフ構造を備える主表面と、
前記隆起領域に選択的に配置された機能化分子と、を有する高分子フィルムを含む物品。 - 前記主表面上に付着され、かつ前記基材と、前記隆起領域の機能化分子との間に配置された第1の材料を更に含む、請求項16に記載の物品。
- 陥凹領域上に選択的に配置された無電解沈着金属を更に含む、請求項16に記載の物品。
- 前記機能化分子が自己構築単層の形態である、請求項16に記載の物品。
- 前記高分子フィルムが5マイクロメートル〜1000マイクロメートルの厚さを有し、ポリイミド、ポリエチレン、ポリプロピレン、ポリアクリレート、ポリ(メチルメタクリレート)、ポリカーボネート、ポリ(塩化ビニル)、ポリエチレンテレフタレート、ポリエチレンナフタレート、及びポリ(フッ化ビニリデン)、ポリメタクリレート、及び液晶ポリマーの群から選択されるポリマーを含む、請求項16に記載の物品。
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US11/550,626 US20080095988A1 (en) | 2006-10-18 | 2006-10-18 | Methods of patterning a deposit metal on a polymeric substrate |
PCT/US2007/081027 WO2008048840A2 (en) | 2006-10-18 | 2007-10-11 | Methods of patterning a deposit metal on a polymeric substrate |
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Also Published As
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US20100203248A1 (en) | 2010-08-12 |
US20080095988A1 (en) | 2008-04-24 |
JP2016105504A (ja) | 2016-06-09 |
WO2008048840A3 (en) | 2008-06-12 |
WO2008048840A2 (en) | 2008-04-24 |
CN101528979A (zh) | 2009-09-09 |
EP2076619A2 (en) | 2009-07-08 |
JP2014103419A (ja) | 2014-06-05 |
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