JP2010506389A - センサ構成エレメントを製造するための方法およびセンサ構成エレメント - Google Patents
センサ構成エレメントを製造するための方法およびセンサ構成エレメント Download PDFInfo
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- JP2010506389A JP2010506389A JP2009530824A JP2009530824A JP2010506389A JP 2010506389 A JP2010506389 A JP 2010506389A JP 2009530824 A JP2009530824 A JP 2009530824A JP 2009530824 A JP2009530824 A JP 2009530824A JP 2010506389 A JP2010506389 A JP 2010506389A
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- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- G—PHYSICS
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- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
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- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
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- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
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- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
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- H—ELECTRICITY
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H—ELECTRICITY
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
本発明は、請求項1の上位概念部に記載の、センサ構成エレメントを製造するための方法から出発する。
請求項1に記載の、センサ構成エレメントを製造するための本発明による方法、ならびに請求項9に記載の本発明によるセンサ構成エレメントは、従来にものに比べて次のような利点を有している。すなわち、半導体基板と金属基板との間の結合を形成するために低温ステップを使用することによって、公知先行技術における不都合が回避されるかまたは少なくとも減少され、特に結合材料内に巣もしくは封入物が存在しなくなるか、またはほとんど存在しなくなるか、もしくは結合層に熱機械的な応力が生じなくなるか、もしくはほとんど生じなくなる。これによって本発明によれば、不良発生を阻止するかまたは数字上減少させることが可能となり、さらに、改善されかつ簡略化された、ひいてはより廉価にされた製造フローを得ることが可能になる。たとえば本発明によれば、より高い負荷交番強さが得られ、さらには250℃よりも高い比較的高い温度下でも結合の高い強度が得られる。
図1bは金属基板30を概略的に示した斜視図であり、図1aは金属基板30を概略的に示した断面図である。この実施例では金属基板30は、たとえばほぼ円筒状の形状を有しており、この円筒体は、その長手方向軸線に沿って一方の端面を起点として1つの切欠きを有しており、他方の端面は閉じられていて、たとえば圧力センサを形成するためのセンサダイヤフラム35を形成している。この場合、種々異なる圧力範囲を感知するために種々異なる厚さのセンサダイヤフラム35が使用されることが規定されていてよい。円筒体の内部、つまり切欠き内に存在する圧力状態により、金属基板30の、センサダイヤフラム35を形成している端面に加えられる圧力が生ぜしめられ、これによりセンサダイヤフラム35が湾曲させられる。このセンサダイヤフラム35上で金属基板30に結合された半導体基板20(図1には図示せず)は、センサダイヤフラム35の湾曲を検出することができる。このために本発明によれば、半導体基板20と金属基板30との間の結合が、結合材料40(図1には図示せず)を介して、低温法で焼結プロセスを用いて形成される。
Claims (10)
- センサ構成エレメント(10)を製造するための方法であって、該センサ構成エレメント(10)が、半導体基板(20)と金属基板(30)とを有している形式の方法において、半導体基板(20)と金属基板(30)とを低温法によって互いに結合させ、この場合、第1のステップで結合材料(40)を半導体基板(20)および/または金属基板(30)に被着させ、第2のステップで半導体基板(20)と金属基板(30)との間の結合を形成するために焼結プロセスを使用することを特徴とする、センサ構成エレメントを製造するための方法。
- 第1のステップの前に、金属化層(21,31)を半導体基板(20)および/または金属基板(30)に被着させる、請求項1記載の方法。
- 前記結合材料(40)が、第2のステップの前に、金属粒子を有する粉末状またはペースト状の材料として設けられている、請求項1または2記載の方法。
- 前記結合材料(40)が、金属粒子ならびに添加剤、特に有機添加剤を有している、請求項3記載の方法。
- 金属粒子がナノ粒子であって、特に実質的に約1マイクロメートルよりも小さく、有利には約500ナノメートルよりも小さく形成されている、請求項3または4記載の方法。
- 前記添加剤が、結合材料(40)において比較的に小さな含量を占めている、請求項3から5までのいずれか1項記載の方法。
- 第2のステップ中に、金属基板(30)と半導体基板(20)とを、該半導体基板(20)の自重を著しく上回る力によって押し合わせる、請求項1から6までのいずれか1項記載の方法。
- 第2のステップ中に、金属基板(30)と半導体基板(20)とを、主として金属基板(30)または半導体基板(20)の自重によってのみ押し合わせる、請求項1から6までのいずれか1項記載の方法。
- 半導体基板(20)と金属基板(30)とを備えたセンサ構成エレメント(10)であって、半導体基板(20)と、金属基板(30)とが、特に低温法によって互いに結合されている形式のものにおいて、半導体基板(20)と金属基板(30)とを結合するために、金属粒子を有する結合材料(40)が設けられていることを特徴とするセンサ構成エレメント。
- 半導体基板(20)と結合材料(40)との間および/または金属基板(30)と結合材料(40)との間に、機能層(22,32)が設けられており、該機能層(22,32)が、特に電気的な絶縁または導電性を生ぜしめる機能層(22,32)および/または熱絶縁を生ぜしめる機能層(22,32)および/または高められた層付着を生ぜしめる機能層(22,32)として設けられている、請求項9記載のセンサ構成エレメント。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006047395A DE102006047395A1 (de) | 2006-10-06 | 2006-10-06 | Verfahren zur Herstellung eines Sensorbauelements und Sensorbauelement |
PCT/EP2007/059316 WO2008043612A2 (de) | 2006-10-06 | 2007-09-06 | Verfahren zur herstellung eines sensorbauelements und sensorbauelement |
Publications (1)
Publication Number | Publication Date |
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JP2010506389A true JP2010506389A (ja) | 2010-02-25 |
Family
ID=39154612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009530824A Pending JP2010506389A (ja) | 2006-10-06 | 2007-09-06 | センサ構成エレメントを製造するための方法およびセンサ構成エレメント |
Country Status (5)
Country | Link |
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US (1) | US20100219487A1 (ja) |
JP (1) | JP2010506389A (ja) |
KR (1) | KR20090064562A (ja) |
DE (1) | DE102006047395A1 (ja) |
WO (1) | WO2008043612A2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102173170B (zh) * | 2011-03-08 | 2014-07-23 | 李梦琪 | 面板粘接装置 |
US9146164B2 (en) * | 2013-03-07 | 2015-09-29 | Sensata Technologies, Inc. | Pressure transducer substrate with self alignment feature |
CN108027293B (zh) * | 2015-09-30 | 2021-03-16 | 日立汽车系统株式会社 | 半导体传感器装置及其制造方法 |
CN107290099B (zh) | 2016-04-11 | 2021-06-08 | 森萨塔科技公司 | 压力传感器、用于压力传感器的插塞件和制造插塞件的方法 |
EP3236226B1 (en) | 2016-04-20 | 2019-07-24 | Sensata Technologies, Inc. | Method of manufacturing a pressure sensor |
JP6486866B2 (ja) * | 2016-05-27 | 2019-03-20 | 日立オートモティブシステムズ株式会社 | 物理量測定装置およびその製造方法ならびに物理量測定素子 |
US10545064B2 (en) | 2017-05-04 | 2020-01-28 | Sensata Technologies, Inc. | Integrated pressure and temperature sensor |
US10323998B2 (en) | 2017-06-30 | 2019-06-18 | Sensata Technologies, Inc. | Fluid pressure sensor |
US10724907B2 (en) | 2017-07-12 | 2020-07-28 | Sensata Technologies, Inc. | Pressure sensor element with glass barrier material configured for increased capacitive response |
US10557770B2 (en) | 2017-09-14 | 2020-02-11 | Sensata Technologies, Inc. | Pressure sensor with improved strain gauge |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11326090A (ja) * | 1997-12-19 | 1999-11-26 | Delco Electronics Corp | 厚膜ピエゾ抵抗体検知構造 |
JP2000275128A (ja) * | 1999-03-25 | 2000-10-06 | Denso Corp | 圧力センサの製造方法 |
DE10156406A1 (de) * | 2001-11-16 | 2003-06-05 | Bosch Gmbh Robert | Verfahren zur Herstellung von Verformungssensoren mit einem Dehnungsmessstreifen sowie zur Herstellung von Dehnungsmessstreifen und Verformungssensoren sowie Dehnungsmessstreifen |
WO2005079353A2 (en) * | 2004-02-18 | 2005-09-01 | Virginia Tech Intellectual Properties, Inc. | Nanoscale metal paste for interconnect and method of use |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4768011A (en) * | 1985-12-24 | 1988-08-30 | Nippon Soken, Inc. | Joint structure for diamond body and metallic body |
DE19938207A1 (de) * | 1999-08-12 | 2001-02-15 | Bosch Gmbh Robert | Sensor, insbesondere mikromechanischer Sensor, und Verfahren zu dessen Herstellung |
JP4077181B2 (ja) * | 2001-09-27 | 2008-04-16 | 本田技研工業株式会社 | 金属用又はセラミック用接合材及び金属又はセラミックの接合方法 |
JP2004045184A (ja) * | 2002-07-11 | 2004-02-12 | Denso Corp | 半導体力学量センサ |
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2006
- 2006-10-06 DE DE102006047395A patent/DE102006047395A1/de not_active Withdrawn
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2007
- 2007-09-06 WO PCT/EP2007/059316 patent/WO2008043612A2/de active Application Filing
- 2007-09-06 JP JP2009530824A patent/JP2010506389A/ja active Pending
- 2007-09-06 KR KR1020097006994A patent/KR20090064562A/ko not_active Application Discontinuation
- 2007-09-06 US US12/305,746 patent/US20100219487A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11326090A (ja) * | 1997-12-19 | 1999-11-26 | Delco Electronics Corp | 厚膜ピエゾ抵抗体検知構造 |
JP2000275128A (ja) * | 1999-03-25 | 2000-10-06 | Denso Corp | 圧力センサの製造方法 |
DE10156406A1 (de) * | 2001-11-16 | 2003-06-05 | Bosch Gmbh Robert | Verfahren zur Herstellung von Verformungssensoren mit einem Dehnungsmessstreifen sowie zur Herstellung von Dehnungsmessstreifen und Verformungssensoren sowie Dehnungsmessstreifen |
WO2005079353A2 (en) * | 2004-02-18 | 2005-09-01 | Virginia Tech Intellectual Properties, Inc. | Nanoscale metal paste for interconnect and method of use |
JP2007527102A (ja) * | 2004-02-18 | 2007-09-20 | バージニア テック インテレクチュアル プロパティーズ インコーポレーテッド | 相互接続用のナノスケールの金属ペーストおよび使用方法 |
Also Published As
Publication number | Publication date |
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WO2008043612A3 (de) | 2008-07-17 |
KR20090064562A (ko) | 2009-06-19 |
US20100219487A1 (en) | 2010-09-02 |
DE102006047395A1 (de) | 2008-04-10 |
WO2008043612A2 (de) | 2008-04-17 |
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