WO2008043612A3 - Verfahren zur herstellung eines sensorbauelements und sensorbauelement - Google Patents

Verfahren zur herstellung eines sensorbauelements und sensorbauelement Download PDF

Info

Publication number
WO2008043612A3
WO2008043612A3 PCT/EP2007/059316 EP2007059316W WO2008043612A3 WO 2008043612 A3 WO2008043612 A3 WO 2008043612A3 EP 2007059316 W EP2007059316 W EP 2007059316W WO 2008043612 A3 WO2008043612 A3 WO 2008043612A3
Authority
WO
WIPO (PCT)
Prior art keywords
sensor component
semiconductor substrate
production
substrate
metal
Prior art date
Application number
PCT/EP2007/059316
Other languages
English (en)
French (fr)
Other versions
WO2008043612A2 (de
Inventor
Dieter Donis
Original Assignee
Bosch Gmbh Robert
Dieter Donis
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert, Dieter Donis filed Critical Bosch Gmbh Robert
Priority to JP2009530824A priority Critical patent/JP2010506389A/ja
Priority to US12/305,746 priority patent/US20100219487A1/en
Publication of WO2008043612A2 publication Critical patent/WO2008043612A2/de
Publication of WO2008043612A3 publication Critical patent/WO2008043612A3/de

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

Es wird ein Verfahren zur Herstellung eines Sensorbauelements sowie ein Sensorbauelement vorgeschlagen, wobei das Sensorbauelement ein Halbleitersubstrat und ein Metallsubstrat aufweist, wobei das Halbleitersubstrat und das Metallsubstrat mittels eines Niedertemperatur-Verfahrens miteinander verbunden werden, wobei in einem ersten Schritt ein Metallpartikel enthaltendes Verbindungsmaterial auf das Halbleitersubstrat und/oder das Metallsubstrat aufgebracht wird und wobei in einem zweiten Schritt ein Sinterprozess zur Herstellung der Verbindung zwischen dem Halbleitersubstrat und dem Metallsubstrat verwendet wird.
PCT/EP2007/059316 2006-10-06 2007-09-06 Verfahren zur herstellung eines sensorbauelements und sensorbauelement WO2008043612A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009530824A JP2010506389A (ja) 2006-10-06 2007-09-06 センサ構成エレメントを製造するための方法およびセンサ構成エレメント
US12/305,746 US20100219487A1 (en) 2006-10-06 2007-09-06 Method for manufacturing a sensor component and sensor component

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006047395A DE102006047395A1 (de) 2006-10-06 2006-10-06 Verfahren zur Herstellung eines Sensorbauelements und Sensorbauelement
DE102006047395.7 2006-10-06

Publications (2)

Publication Number Publication Date
WO2008043612A2 WO2008043612A2 (de) 2008-04-17
WO2008043612A3 true WO2008043612A3 (de) 2008-07-17

Family

ID=39154612

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2007/059316 WO2008043612A2 (de) 2006-10-06 2007-09-06 Verfahren zur herstellung eines sensorbauelements und sensorbauelement

Country Status (5)

Country Link
US (1) US20100219487A1 (de)
JP (1) JP2010506389A (de)
KR (1) KR20090064562A (de)
DE (1) DE102006047395A1 (de)
WO (1) WO2008043612A2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102173170B (zh) * 2011-03-08 2014-07-23 李梦琪 面板粘接装置
US9146164B2 (en) * 2013-03-07 2015-09-29 Sensata Technologies, Inc. Pressure transducer substrate with self alignment feature
US10732062B2 (en) 2015-09-30 2020-08-04 Hitachi Automotive Systems, Ltd. Semiconductor sensor device and method for manufacturing same
CN107290099B (zh) 2016-04-11 2021-06-08 森萨塔科技公司 压力传感器、用于压力传感器的插塞件和制造插塞件的方法
EP3236226B1 (de) 2016-04-20 2019-07-24 Sensata Technologies, Inc. Verfahren zur herstellung eines drucksensors
JP6486866B2 (ja) * 2016-05-27 2019-03-20 日立オートモティブシステムズ株式会社 物理量測定装置およびその製造方法ならびに物理量測定素子
US10545064B2 (en) 2017-05-04 2020-01-28 Sensata Technologies, Inc. Integrated pressure and temperature sensor
US10323998B2 (en) 2017-06-30 2019-06-18 Sensata Technologies, Inc. Fluid pressure sensor
US10724907B2 (en) 2017-07-12 2020-07-28 Sensata Technologies, Inc. Pressure sensor element with glass barrier material configured for increased capacitive response
US10557770B2 (en) 2017-09-14 2020-02-11 Sensata Technologies, Inc. Pressure sensor with improved strain gauge

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19938207A1 (de) * 1999-08-12 2001-02-15 Bosch Gmbh Robert Sensor, insbesondere mikromechanischer Sensor, und Verfahren zu dessen Herstellung
DE10156406A1 (de) * 2001-11-16 2003-06-05 Bosch Gmbh Robert Verfahren zur Herstellung von Verformungssensoren mit einem Dehnungsmessstreifen sowie zur Herstellung von Dehnungsmessstreifen und Verformungssensoren sowie Dehnungsmessstreifen
WO2005079353A2 (en) * 2004-02-18 2005-09-01 Virginia Tech Intellectual Properties, Inc. Nanoscale metal paste for interconnect and method of use

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4768011A (en) * 1985-12-24 1988-08-30 Nippon Soken, Inc. Joint structure for diamond body and metallic body
US5898359A (en) * 1997-12-19 1999-04-27 Delco Electronics Corp. Diffusion-barrier materials for thick-film piezoresistors and sensors formed therewith
JP4623776B2 (ja) * 1999-03-25 2011-02-02 株式会社デンソー 圧力センサの製造方法
JP4077181B2 (ja) * 2001-09-27 2008-04-16 本田技研工業株式会社 金属用又はセラミック用接合材及び金属又はセラミックの接合方法
JP2004045184A (ja) * 2002-07-11 2004-02-12 Denso Corp 半導体力学量センサ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19938207A1 (de) * 1999-08-12 2001-02-15 Bosch Gmbh Robert Sensor, insbesondere mikromechanischer Sensor, und Verfahren zu dessen Herstellung
DE10156406A1 (de) * 2001-11-16 2003-06-05 Bosch Gmbh Robert Verfahren zur Herstellung von Verformungssensoren mit einem Dehnungsmessstreifen sowie zur Herstellung von Dehnungsmessstreifen und Verformungssensoren sowie Dehnungsmessstreifen
WO2005079353A2 (en) * 2004-02-18 2005-09-01 Virginia Tech Intellectual Properties, Inc. Nanoscale metal paste for interconnect and method of use

Also Published As

Publication number Publication date
KR20090064562A (ko) 2009-06-19
DE102006047395A1 (de) 2008-04-10
US20100219487A1 (en) 2010-09-02
JP2010506389A (ja) 2010-02-25
WO2008043612A2 (de) 2008-04-17

Similar Documents

Publication Publication Date Title
WO2008043612A3 (de) Verfahren zur herstellung eines sensorbauelements und sensorbauelement
WO2008034638A3 (de) Verfahren zur metallisierung von halbleiterbauelementen und verwendung
WO2008133718A3 (en) A gas separation membrane system and method of making thereof using nanoscale metal material
EP1806782A3 (de) Herstellungsverfahren für Halbleitervorrichtung
WO2003071596A3 (de) Elektronisches bauteil mit klebstoffschicht und verfahren zur herstellung desselben
EP1498456A4 (de) Organische halbleiterzusammensetzung, organisches halbleiterelement und herstellungsverfahren dafür
WO2008017472A3 (de) Verfahren zum herstellen einer porösen, keramischen oberflächenschicht
WO2008028625A3 (de) Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung
WO2010139342A8 (en) Lens and method for manufacturing same
WO2009055572A3 (en) Semiconductor structure and method of manufacture
WO2006041592A3 (en) Large-scale manufacturing process for the production of pharmaceutical compositions
WO2009080615A3 (en) Process for the production of microelectromechanical systems
WO2007010396A3 (en) Dry state coating process
WO2007117829A3 (en) Method for bonding a semiconductor substrate to a metal substrate
WO2009060902A1 (ja) セラミックス基板、セラミックス基板の製造方法及びパワーモジュール用基板の製造方法
WO2009055565A3 (en) Semiconductor structure and method of manufacture
WO2007121735A3 (de) Verbundsubstrat und verfahren zur herstellung eines verbundsubstrats
WO2008114637A1 (ja) 目封止ハニカム構造体の製造方法
WO2010139499A3 (de) Mikromechanisches bauelement mit eutektischer verbindung zwischen zwei substraten und verfahren zum herstellen eines derartigen mikromechanischen bauelements
WO2009015984A3 (de) Waferfügeverfahren mit senterschritt, waferverbund sowie chip
WO2009055570A3 (en) Semiconductor structure and method of manufacture
WO2007002539A3 (en) Nanoparticles and method of making thereof
WO2006108714A3 (de) Tetrahydronaphtalinderivate, verfahren zu ihrer herstellung und ihre verwendung als entzündungshemmer
WO2007147811A3 (de) Verfahren zur herstellung dünner schichten eines silikons und dünnes silikon
EP1972016A4 (de) Herstellungsverfahren für einen einzelelektronentransistor (set) durch verwendung von nanolithographischer technologie im halbleiterprozess

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07803275

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 2009530824

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 1020097006994

Country of ref document: KR

122 Ep: pct application non-entry in european phase

Ref document number: 07803275

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 12305746

Country of ref document: US