JP2010287287A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2010287287A
JP2010287287A JP2009141059A JP2009141059A JP2010287287A JP 2010287287 A JP2010287287 A JP 2010287287A JP 2009141059 A JP2009141059 A JP 2009141059A JP 2009141059 A JP2009141059 A JP 2009141059A JP 2010287287 A JP2010287287 A JP 2010287287A
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JP
Japan
Prior art keywords
power supply
memory cell
supply voltage
level
line
Prior art date
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Pending
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JP2009141059A
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English (en)
Japanese (ja)
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JP2010287287A5 (enExample
Inventor
Makoto Yabuuchi
誠 藪内
Koji Arai
浩二 新居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
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Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009141059A priority Critical patent/JP2010287287A/ja
Publication of JP2010287287A publication Critical patent/JP2010287287A/ja
Publication of JP2010287287A5 publication Critical patent/JP2010287287A5/ja
Pending legal-status Critical Current

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  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
JP2009141059A 2009-06-12 2009-06-12 半導体装置 Pending JP2010287287A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009141059A JP2010287287A (ja) 2009-06-12 2009-06-12 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009141059A JP2010287287A (ja) 2009-06-12 2009-06-12 半導体装置

Publications (2)

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JP2010287287A true JP2010287287A (ja) 2010-12-24
JP2010287287A5 JP2010287287A5 (enExample) 2012-04-12

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ID=43542865

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JP2009141059A Pending JP2010287287A (ja) 2009-06-12 2009-06-12 半導体装置

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JP (1) JP2010287287A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013143161A (ja) * 2012-01-10 2013-07-22 Fujitsu Semiconductor Ltd 半導体記憶装置及びその書き込み方法
JP2013232256A (ja) * 2012-04-27 2013-11-14 Fujitsu Semiconductor Ltd 半導体記憶装置およびその制御方法
CN111668232A (zh) * 2020-06-19 2020-09-15 成都华微电子科技有限公司 集成电路芯片
JP2022525451A (ja) * 2019-03-14 2022-05-16 ゼナージック エービー 面積効率の良いデュアルポート及びマルチポートｓｒａｍ、ｓｒａｍのための面積効率の良いメモリセル
JP2022103599A (ja) * 2020-12-28 2022-07-08 合肥晶合集成電路股▲ふん▼有限公司 半導体メモリ装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58211391A (ja) * 1982-05-31 1983-12-08 Toshiba Corp 半導体記憶装置
JPH05109283A (ja) * 1991-10-15 1993-04-30 Hitachi Ltd 低消費電力半導体記憶装置
JPH0883490A (ja) * 1994-09-13 1996-03-26 Fujitsu Ltd 半導体記憶装置
JP2002368135A (ja) * 2001-06-12 2002-12-20 Hitachi Ltd 半導体記憶装置
US7164596B1 (en) * 2005-07-28 2007-01-16 Texas Instruments Incorporated SRAM cell with column select line
JP2009099196A (ja) * 2007-10-17 2009-05-07 Nec Electronics Corp 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58211391A (ja) * 1982-05-31 1983-12-08 Toshiba Corp 半導体記憶装置
JPH05109283A (ja) * 1991-10-15 1993-04-30 Hitachi Ltd 低消費電力半導体記憶装置
JPH0883490A (ja) * 1994-09-13 1996-03-26 Fujitsu Ltd 半導体記憶装置
JP2002368135A (ja) * 2001-06-12 2002-12-20 Hitachi Ltd 半導体記憶装置
US7164596B1 (en) * 2005-07-28 2007-01-16 Texas Instruments Incorporated SRAM cell with column select line
JP2009099196A (ja) * 2007-10-17 2009-05-07 Nec Electronics Corp 半導体装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013143161A (ja) * 2012-01-10 2013-07-22 Fujitsu Semiconductor Ltd 半導体記憶装置及びその書き込み方法
JP2013232256A (ja) * 2012-04-27 2013-11-14 Fujitsu Semiconductor Ltd 半導体記憶装置およびその制御方法
JP2022525451A (ja) * 2019-03-14 2022-05-16 ゼナージック エービー 面積効率の良いデュアルポート及びマルチポートｓｒａｍ、ｓｒａｍのための面積効率の良いメモリセル
JP7588858B2 (ja) 2019-03-14 2024-11-25 ゼナージック エービー 面積効率の良いデュアルポート及びマルチポートｓｒａｍ、ｓｒａｍのための面積効率の良いメモリセル
CN111668232A (zh) * 2020-06-19 2020-09-15 成都华微电子科技有限公司 集成电路芯片
CN111668232B (zh) * 2020-06-19 2023-04-07 成都华微电子科技股份有限公司 集成电路芯片
JP2022103599A (ja) * 2020-12-28 2022-07-08 合肥晶合集成電路股▲ふん▼有限公司 半導体メモリ装置
JP7254060B2 (ja) 2020-12-28 2023-04-07 合肥晶合集成電路股▲ふん▼有限公司 半導体メモリ装置

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