JP2010263184A - ＧａＮ系半導体光素子、ＧａＮ系半導体光素子を作製する方法、エピタキシャルウエハ及びＧａＮ系半導体膜を成長する方法 - Google Patents
ＧａＮ系半導体光素子、ＧａＮ系半導体光素子を作製する方法、エピタキシャルウエハ及びＧａＮ系半導体膜を成長する方法 Download PDFInfo
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- JP2010263184A JP2010263184A JP2010021503A JP2010021503A JP2010263184A JP 2010263184 A JP2010263184 A JP 2010263184A JP 2010021503 A JP2010021503 A JP 2010021503A JP 2010021503 A JP2010021503 A JP 2010021503A JP 2010263184 A JP2010263184 A JP 2010263184A
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- 238000000034 method Methods 0.000 title claims description 56
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- 229910052738 indium Inorganic materials 0.000 claims description 22
- 239000000470 constituent Substances 0.000 claims description 19
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 19
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 46
- 238000010348 incorporation Methods 0.000 description 37
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 23
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- 230000007246 mechanism Effects 0.000 description 18
- 238000005253 cladding Methods 0.000 description 17
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 12
- 125000004433 nitrogen atom Chemical group N* 0.000 description 12
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- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
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- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 2
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010021503A JP2010263184A (ja) | 2008-08-04 | 2010-02-02 | ＧａＮ系半導体光素子、ＧａＮ系半導体光素子を作製する方法、エピタキシャルウエハ及びＧａＮ系半導体膜を成長する方法 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008201039 | 2008-08-04 | ||
| JP2009094335 | 2009-04-08 | ||
| JP2010021503A JP2010263184A (ja) | 2008-08-04 | 2010-02-02 | ＧａＮ系半導体光素子、ＧａＮ系半導体光素子を作製する方法、エピタキシャルウエハ及びＧａＮ系半導体膜を成長する方法 |
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| JP2009155208A Division JP4475358B1 (ja) | 2008-08-04 | 2009-06-30 | ＧａＮ系半導体光素子、ＧａＮ系半導体光素子を作製する方法、及びエピタキシャルウエハ |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
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| JP2011228095A Division JP5206854B2 (ja) | 2008-08-04 | 2011-10-17 | ＧａＮ系半導体レーザ、ＧａＮ系半導体レーザを作製する方法 |
| JP2011228092A Division JP5182407B2 (ja) | 2008-08-04 | 2011-10-17 | ＧａＮ系半導体光素子、ＧａＮ系半導体光素子を作製する方法、エピタキシャルウエハ及びＧａＮ系半導体膜を成長する方法 |
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| JP2010263184A true JP2010263184A (ja) | 2010-11-18 |
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| JP2010021503A Pending JP2010263184A (ja) | 2008-08-04 | 2010-02-02 | ＧａＮ系半導体光素子、ＧａＮ系半導体光素子を作製する方法、エピタキシャルウエハ及びＧａＮ系半導体膜を成長する方法 |
| JP2011228095A Active JP5206854B2 (ja) | 2008-08-04 | 2011-10-17 | ＧａＮ系半導体レーザ、ＧａＮ系半導体レーザを作製する方法 |
| JP2011228092A Active JP5182407B2 (ja) | 2008-08-04 | 2011-10-17 | ＧａＮ系半導体光素子、ＧａＮ系半導体光素子を作製する方法、エピタキシャルウエハ及びＧａＮ系半導体膜を成長する方法 |
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| JP2011228095A Active JP5206854B2 (ja) | 2008-08-04 | 2011-10-17 | ＧａＮ系半導体レーザ、ＧａＮ系半導体レーザを作製する方法 |
| JP2011228092A Active JP5182407B2 (ja) | 2008-08-04 | 2011-10-17 | ＧａＮ系半導体光素子、ＧａＮ系半導体光素子を作製する方法、エピタキシャルウエハ及びＧａＮ系半導体膜を成長する方法 |
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| JP (3) | JP2010263184A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP6046383B2 (ja) * | 2012-06-12 | 2016-12-14 | ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． | 量子井戸構造および該量子井戸構造を含む窒化物半導体素子 |
| JP6266742B1 (ja) | 2016-12-20 | 2018-01-24 | 古河機械金属株式会社 | Ｉｉｉ族窒化物半導体基板、及び、ｉｉｉ族窒化物半導体基板の製造方法 |
| JP7387604B2 (ja) * | 2018-07-20 | 2023-11-28 | ソニーセミコンダクタソリューションズ株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4307113B2 (ja) * | 2002-03-19 | 2009-08-05 | 宣彦 澤木 | 半導体発光素子およびその製造方法 |
| JP2006128661A (ja) * | 2004-09-29 | 2006-05-18 | Matsushita Electric Ind Co Ltd | 窒化物系半導体レーザ |
| JP4928874B2 (ja) * | 2006-08-31 | 2012-05-09 | 三洋電機株式会社 | 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子 |
| JP5564162B2 (ja) * | 2006-09-29 | 2014-07-30 | フューチャー ライト リミテッド ライアビリティ カンパニー | 発光ダイオード装置 |
| JP2008109066A (ja) * | 2006-09-29 | 2008-05-08 | Rohm Co Ltd | 発光素子 |
| JP2009088230A (ja) * | 2007-09-28 | 2009-04-23 | Furukawa Electric Co Ltd:The | 半導体発光素子およびその製造方法 |
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2010
- 2010-02-02 JP JP2010021503A patent/JP2010263184A/ja active Pending
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2011
- 2011-10-17 JP JP2011228095A patent/JP5206854B2/ja active Active
- 2011-10-17 JP JP2011228092A patent/JP5182407B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012015555A (ja) | 2012-01-19 |
| JP5182407B2 (ja) | 2013-04-17 |
| JP5206854B2 (ja) | 2013-06-12 |
| JP2012015556A (ja) | 2012-01-19 |
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