JP2010238927A - 太陽電池セル、太陽電池モジュールおよび太陽電池システム - Google Patents
太陽電池セル、太陽電池モジュールおよび太陽電池システム Download PDFInfo
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- H—ELECTRICITY
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- H—ELECTRICITY
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- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
- H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
【解決手段】集電電極部40a、40a、・・・とこの集電電極部と接続されたN本の非直線状の線状電極40b、40bを有する表面電極40と、半導体基板と、集電電極部41a、41a、・・・とこの集電電極部と接続されたN本の非直線状の線状電極41b、41bを有する裏面電極41をこの順に備えた太陽電池セルであって、表面電極40の非直線状の線状電極40bと裏面電極41の非直線状の線状電極41bは、光電変換部を介して対向配置されると共に、表面側から垂直方向に見た場合、形状が異なると共に交わる部分を有する。
【選択図】図5
Description
(第1実施形態)
図1乃至図6を参照して本発明の第1実施形態に係る複数の太陽電池セルを備えた太陽電池モジュールを説明する。図1は本実施形態に係る太陽電池モジュールの上面図、図2は当該太陽電池モジュールの斜視図、図3は図1のA−A’断面の一部の断面図、図4(a)は図1の太陽電池モジュール中の太陽電池セルの上面図、図4(b)は当該太陽電池セルの裏面図、図5(a)は当該太陽電池セルと導電性接続部材との接続を説明するための表側平面図であり、図5(b)は 図5(a)中のA−A’に沿った一部の模式断面図、図6(a)は 図5(a)中のB−B’に沿った一部の模式断面図、図6(b)は 図5(a)中のC−C’に沿った一部の模式断面図である。
(太陽電池モジュールの製造方法)
以下に本実施形態に係る太陽電池モジュールの製造方法を説明する。
(第2実施形態)
図8を参照して本発明の第2実施形態に係る太陽電池モジュールを説明する。図8(a)は本施形態に係る太陽電池モジュール中の太陽電池セルの上面図、図8(b)は当該太陽電池セルの下面図である。なお、第1実施形態との相違点について主に説明する。
(第3実施形態)
図9を参照して本発明の第3実施形態に係る太陽電池モジュールを説明する。図9(a)は本施形態に係る太陽電池モジュール中の太陽電池セルの上面図、図9(b)は当該太陽電池セルの下面図である。なお、第1実施形態との相違点について主に説明する。
の効果が得られる。
(第4実施形態)
図10を参照して本発明の第1実施形態に係る太陽電池モジュールを説明する。図10(a)は本施形態に係る太陽電池モジュール中の太陽電池セルの上面図、図10(b)は当該太陽電池セルの下面図である。なお、第1実施形態との相違点について主に説明する。
(第5実施形態)
図11を参照して本発明の第1実施形態に係る太陽電池モジュールを説明する。図10(a)は本施形態に係る太陽電池モジュール中の太陽電池セルの上面図、図10(b)は当該太陽電池セルの下面図である。なお、第1実施形態との相違点について主に説明する。
(第6実施形態)
次に、本発明の第6の実施の形態に係る太陽電池システムを説明する。
4 太陽電池セル
5 接続部材
40 表面電極
40a フィンガー電極
40b、140b、240b、340b バスバー電極
41 裏面電極
41a フィンガー電極
41b、141b、241b、341b バスバー電極
Claims (6)
- 第1の集電電極部および該第1の集電電極部に接続されたN本の非直線状の線状電極を有する表面電極と、半導体基板と、第2の集電電極部および該第2の集電電極部に接続されたN本の線状電極を有する裏面電極をこの順に備えた太陽電池セルであって、
前記表面電極の非直線状の線状電極と前記裏面電極の線状電極は、前記半導体基板を介して対向するように配置されると共に、前記半導体基板の上面上方側から垂直方向に見た場合、形状が異なると共に交わる部分を有することを特徴とする太陽電池セル。 - 前記第1の集電電極部及び前記第2の集電電極部は、複数のフィンガー電極からなることを特徴とする請求項1記載の太陽電池セル。
- 前記表面電極の線状電極の形状と前記裏面電極の線状電極の形状は、対称関係にあることを特徴とする請求項1又は2記載の太陽電池セル。
- 前記表面電極の線状電極および前記裏面電極の線状電極は、細線状であることを特徴とする請求項1乃至3記載の太陽電池セル。
- 請求項1乃至4のいずれかに記載の複数の太陽電池セルと、該複数の太陽電池セルを電気的に接続するための導電性接続部材とを備えることを特徴とする太陽電池モジュール。
- 請求項5記載の太陽電池モジュールを備えることを特徴とする太陽電池システム。
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JP2009085599A JP5515367B2 (ja) | 2009-03-31 | 2009-03-31 | 太陽電池セル、太陽電池モジュールおよび太陽電池システム |
US12/727,810 US20100243024A1 (en) | 2009-03-31 | 2010-03-19 | Solar cell, solar cell module and solar cell system |
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JP2009085599A JP5515367B2 (ja) | 2009-03-31 | 2009-03-31 | 太陽電池セル、太陽電池モジュールおよび太陽電池システム |
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JP2010238927A true JP2010238927A (ja) | 2010-10-21 |
JP5515367B2 JP5515367B2 (ja) | 2014-06-11 |
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JP (1) | JP5515367B2 (ja) |
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