JP2010183015A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2010183015A
JP2010183015A JP2009027528A JP2009027528A JP2010183015A JP 2010183015 A JP2010183015 A JP 2010183015A JP 2009027528 A JP2009027528 A JP 2009027528A JP 2009027528 A JP2009027528 A JP 2009027528A JP 2010183015 A JP2010183015 A JP 2010183015A
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Japan
Prior art keywords
region
regions
extending
power supply
gates
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Pending
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JP2009027528A
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English (en)
Japanese (ja)
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JP2010183015A5 (enExample
Inventor
Yukikazu Inoue
幸多 井上
Yusuke Kawase
祐介 川瀬
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Renesas Electronics Corp
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Renesas Electronics Corp
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Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009027528A priority Critical patent/JP2010183015A/ja
Publication of JP2010183015A publication Critical patent/JP2010183015A/ja
Publication of JP2010183015A5 publication Critical patent/JP2010183015A5/ja
Pending legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2009027528A 2009-02-09 2009-02-09 半導体装置 Pending JP2010183015A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009027528A JP2010183015A (ja) 2009-02-09 2009-02-09 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009027528A JP2010183015A (ja) 2009-02-09 2009-02-09 半導体装置

Publications (2)

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JP2010183015A true JP2010183015A (ja) 2010-08-19
JP2010183015A5 JP2010183015A5 (enExample) 2012-03-08

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JP2009027528A Pending JP2010183015A (ja) 2009-02-09 2009-02-09 半導体装置

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JP (1) JP2010183015A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012053125A1 (ja) * 2010-10-21 2012-04-26 パナソニック株式会社 半導体装置
JP2015138945A (ja) * 2014-01-24 2015-07-30 ルネサスエレクトロニクス株式会社 半導体装置及びｉｏセル
WO2024045262A1 (zh) * 2022-09-01 2024-03-07 长鑫存储技术有限公司 半导体结构以及存储器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016016A (ja) * 2000-06-30 2002-01-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2006228954A (ja) * 2005-02-17 2006-08-31 Matsushita Electric Ind Co Ltd 半導体装置とそのレイアウト設計方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002016016A (ja) * 2000-06-30 2002-01-18 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2006228954A (ja) * 2005-02-17 2006-08-31 Matsushita Electric Ind Co Ltd 半導体装置とそのレイアウト設計方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012053125A1 (ja) * 2010-10-21 2012-04-26 パナソニック株式会社 半導体装置
CN102884617A (zh) * 2010-10-21 2013-01-16 松下电器产业株式会社 半导体装置
US8907492B2 (en) 2010-10-21 2014-12-09 Panasonic Corporation Semiconductor device
CN102884617B (zh) * 2010-10-21 2015-01-07 松下电器产业株式会社 半导体装置
JP5655086B2 (ja) * 2010-10-21 2015-01-14 パナソニック株式会社 半導体装置
JP2015138945A (ja) * 2014-01-24 2015-07-30 ルネサスエレクトロニクス株式会社 半導体装置及びｉｏセル
WO2024045262A1 (zh) * 2022-09-01 2024-03-07 长鑫存储技术有限公司 半导体结构以及存储器

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