JP2010178196A - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP2010178196A JP2010178196A JP2009020475A JP2009020475A JP2010178196A JP 2010178196 A JP2010178196 A JP 2010178196A JP 2009020475 A JP2009020475 A JP 2009020475A JP 2009020475 A JP2009020475 A JP 2009020475A JP 2010178196 A JP2010178196 A JP 2010178196A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 165
- 238000012546 transfer Methods 0.000 claims description 77
- 238000001514 detection method Methods 0.000 claims description 48
- 230000001934 delay Effects 0.000 claims description 6
- 238000012545 processing Methods 0.000 description 21
- 108091006146 Channels Proteins 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- 230000000737 periodic effect Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229920000070 poly-3-hydroxybutyrate Polymers 0.000 description 6
- 238000001444 catalytic combustion detection Methods 0.000 description 3
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- 230000002457 bidirectional effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000010351 charge transfer process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
Abstract
【解決手段】本発明の一実施形態に係る固体撮像装置1は、電荷増倍型の固体撮像装置において、入射光量に応じた電荷を生成する撮像領域10と、撮像領域10からの電荷を受ける出力レジスタ部20と、出力レジスタ部20からの電荷を増倍する増倍レジスタ部28とを備え、撮像領域10からの電荷量に応じて、増倍レジスタ部28の増倍率のフィードフォワード制御を行う。
【選択図】図1
Description
[第1の実施形態]
[第2の実施形態]
(ライン型の固体撮像装置の例1)
(ライン型の固体撮像装置の例2)
(インターライン型の固体撮像装置)
(フルフレームトランスファ型の固体撮像装置)
[第3の実施形態]
Claims (9)
- 電荷増倍型の固体撮像装置において、
入射光量に応じた電荷を生成する撮像領域と、
前記撮像領域からの電荷を受ける出力レジスタ部と、
前記出力レジスタ部からの電荷を増倍する増倍レジスタ部と、
を備え、
前記撮像領域からの電荷量に応じて、前記増倍レジスタ部の増倍率のフィードフォワード制御を行う、
固体撮像装置。 - 前記増倍レジスタ部に入力される電荷量を検出する検出部と、
前記検出部によって検出された電荷量に応じて、前記増倍レジスタ部の増倍率のフィードフォワード制御を行う制御部と、
を更に備える、請求項1に記載の固体撮像装置。 - 前記撮像領域からの電荷を受ける検出レジスタ部と、
前記検出レジスタ部から出力される電荷量に応じて、前記増倍レジスタ部の増倍率のフィードフォワード制御を行う制御部と、
を更に備える、請求項1に記載の固体撮像装置。 - 前記出力レジスタ部と前記増倍レジスタ部との間に配置され、前記出力レジスタ部から前記増倍レジスタ部への電荷の転送を遅延させる遅延レジスタ部を更に備える、請求項1又は3に記載の固体撮像装置。
- 前記検出部と前記増倍レジスタ部との間に配置され、前記検出部から前記増倍レジスタ部への電荷の転送を遅延させる遅延レジスタ部を更に備える、請求項2に記載の固体撮像装置。
- 前記制御部は、前記検出部によって検出された電荷量の最大値、最小値及び平均値のうちの何れかに応じて、前記増倍レジスタ部の増倍率の制御を行う、請求項2に記載の固体撮像装置。
- 前記制御部は、前記検出レジスタ部から出力される電荷量の最大値、最小値及び平均値のうちの何れかに応じて、前記増倍レジスタ部の増倍率の制御を行う、請求項3に記載の固体撮像装置。
- 前記検出部はフローティング・ゲート・アンプを含む、請求項2に記載の固体撮像装置。
- 電荷増倍型の固体撮像装置において、
入射光量に応じた電荷を生成する撮像領域と、
前記撮像領域からの電荷を受ける複数の出力レジスタ部と、
前記複数の出力レジスタ部からの電荷をそれぞれ増倍する複数の増倍レジスタ部と、
を備え、
前記複数の増倍レジスタ部にそれぞれ入力される電荷量に応じて、前記複数の増倍レジスタ部の増倍率のフィードフォワード制御をそれぞれ行う、
固体撮像装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009020475A JP5237844B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
PCT/JP2010/050818 WO2010087288A1 (ja) | 2009-01-30 | 2010-01-22 | 固体撮像装置 |
CN201080006335.4A CN102301696B (zh) | 2009-01-30 | 2010-01-22 | 固体摄像装置 |
US13/144,741 US9609247B2 (en) | 2009-01-30 | 2010-01-22 | Solid-state imaging device performing feed-forward control of multiplication factor of multiplication register to match dynamic range of the device with the intensity distribution of incident light |
KR1020117007770A KR101675605B1 (ko) | 2009-01-30 | 2010-01-22 | 고체 촬상 장치 |
EP10735757.6A EP2385696B1 (en) | 2009-01-30 | 2010-01-22 | Solid-state imaging device |
TW099102305A TWI558209B (zh) | 2009-01-30 | 2010-01-27 | Solid-state imaging device |
Applications Claiming Priority (1)
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JP2009020475A JP5237844B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
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Publication Number | Publication Date |
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JP2010178196A true JP2010178196A (ja) | 2010-08-12 |
JP5237844B2 JP5237844B2 (ja) | 2013-07-17 |
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JP2009020475A Active JP5237844B2 (ja) | 2009-01-30 | 2009-01-30 | 固体撮像装置 |
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US (1) | US9609247B2 (ja) |
EP (1) | EP2385696B1 (ja) |
JP (1) | JP5237844B2 (ja) |
KR (1) | KR101675605B1 (ja) |
CN (1) | CN102301696B (ja) |
TW (1) | TWI558209B (ja) |
WO (1) | WO2010087288A1 (ja) |
Cited By (4)
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US20120147236A1 (en) * | 2010-12-14 | 2012-06-14 | Christopher Parks | Image sensor with charge multiplication |
JP2013251907A (ja) * | 2010-12-14 | 2013-12-12 | Truesense Imaging Inc | 電荷増倍を有する画像センサー |
US9136305B2 (en) | 2010-12-14 | 2015-09-15 | Semiconductor Components Industries, Llc | Method of producing an image sensor having multiple output channels |
CN110335881A (zh) * | 2019-04-30 | 2019-10-15 | 中国电子科技集团公司第四十四研究所 | 电子倍增电荷耦合器件倍增寄存器防杂散信号干扰结构 |
Families Citing this family (11)
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JP5438331B2 (ja) * | 2009-01-30 | 2014-03-12 | 浜松ホトニクス株式会社 | 固体撮像装置 |
US20110154656A1 (en) * | 2009-11-06 | 2011-06-30 | Harrison Joe A | Systems and methods for manufacturing modified impedance coaxial cables |
US8553126B2 (en) * | 2010-12-14 | 2013-10-08 | Truesense Imaging, Inc. | Image sensor with charge multiplication |
US8601674B2 (en) * | 2010-12-20 | 2013-12-10 | Omnivision Technologies, Inc. | Method for producing an image sensor with charge multiplication output channel and charge sensing output channel |
US8643758B2 (en) * | 2010-12-20 | 2014-02-04 | Omnivision Technologies, Inc. | Method for processing an image captured by an image sensor having a charge multiplication output channel and a charge sensing output channel |
US8800130B2 (en) | 2011-05-25 | 2014-08-12 | Truesense Imaging, Inc. | Methods for producing image sensors having multi-purpose architecture |
US8773563B2 (en) * | 2011-05-25 | 2014-07-08 | Truesense Imaging, Inc. | Multi-purpose architecture for CCD image sensors |
GB201516701D0 (en) * | 2015-09-21 | 2015-11-04 | Innovation & Business Dev Solutions Ltd | Time of flight distance sensor |
US9930276B2 (en) * | 2016-01-14 | 2018-03-27 | Semiconductor Components Industries, Llc | Methods for clocking an image sensor |
GB201704452D0 (en) | 2017-03-21 | 2017-05-03 | Photonic Vision Ltd | Time of flight sensor |
US10805567B2 (en) * | 2018-09-13 | 2020-10-13 | Semiconductor Components Industries, Llc | Imaging pixels with non-destructive readout capabilities |
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JP2003009000A (ja) * | 2001-06-21 | 2003-01-10 | Fuji Photo Film Co Ltd | 撮像装置 |
JP2008236176A (ja) * | 2007-03-19 | 2008-10-02 | Nec Corp | 電子増倍型撮像装置、電子増倍型撮像装置の校正プログラムおよび校正方法 |
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2009
- 2009-01-30 JP JP2009020475A patent/JP5237844B2/ja active Active
-
2010
- 2010-01-22 CN CN201080006335.4A patent/CN102301696B/zh active Active
- 2010-01-22 US US13/144,741 patent/US9609247B2/en active Active
- 2010-01-22 WO PCT/JP2010/050818 patent/WO2010087288A1/ja active Application Filing
- 2010-01-22 KR KR1020117007770A patent/KR101675605B1/ko active IP Right Grant
- 2010-01-22 EP EP10735757.6A patent/EP2385696B1/en active Active
- 2010-01-27 TW TW099102305A patent/TWI558209B/zh active
Patent Citations (2)
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JP2003009000A (ja) * | 2001-06-21 | 2003-01-10 | Fuji Photo Film Co Ltd | 撮像装置 |
JP2008236176A (ja) * | 2007-03-19 | 2008-10-02 | Nec Corp | 電子増倍型撮像装置、電子増倍型撮像装置の校正プログラムおよび校正方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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US20120147236A1 (en) * | 2010-12-14 | 2012-06-14 | Christopher Parks | Image sensor with charge multiplication |
JP2013251907A (ja) * | 2010-12-14 | 2013-12-12 | Truesense Imaging Inc | 電荷増倍を有する画像センサー |
JP2014504481A (ja) * | 2010-12-14 | 2014-02-20 | トゥルーセンス イメージング, インコーポレイテッド | 電荷増倍を有する画像センサー |
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US9136305B2 (en) | 2010-12-14 | 2015-09-15 | Semiconductor Components Industries, Llc | Method of producing an image sensor having multiple output channels |
CN110335881A (zh) * | 2019-04-30 | 2019-10-15 | 中国电子科技集团公司第四十四研究所 | 电子倍增电荷耦合器件倍增寄存器防杂散信号干扰结构 |
Also Published As
Publication number | Publication date |
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JP5237844B2 (ja) | 2013-07-17 |
CN102301696A (zh) | 2011-12-28 |
KR101675605B1 (ko) | 2016-11-11 |
EP2385696A4 (en) | 2015-07-01 |
TW201038068A (en) | 2010-10-16 |
US20110273603A1 (en) | 2011-11-10 |
CN102301696B (zh) | 2015-12-02 |
EP2385696A1 (en) | 2011-11-09 |
TWI558209B (zh) | 2016-11-11 |
EP2385696B1 (en) | 2018-11-28 |
US9609247B2 (en) | 2017-03-28 |
WO2010087288A1 (ja) | 2010-08-05 |
KR20110107319A (ko) | 2011-09-30 |
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