JP4268643B2 - 撮像装置およびその雑音低減方法 - Google Patents
撮像装置およびその雑音低減方法 Download PDFInfo
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- JP4268643B2 JP4268643B2 JP2007007533A JP2007007533A JP4268643B2 JP 4268643 B2 JP4268643 B2 JP 4268643B2 JP 2007007533 A JP2007007533 A JP 2007007533A JP 2007007533 A JP2007007533 A JP 2007007533A JP 4268643 B2 JP4268643 B2 JP 4268643B2
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- electron
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- 238000003384 imaging method Methods 0.000 title claims description 59
- 238000000034 method Methods 0.000 title claims description 23
- 230000001629 suppression Effects 0.000 claims description 31
- 238000012935 Averaging Methods 0.000 claims description 7
- 238000012937 correction Methods 0.000 description 48
- 238000012546 transfer Methods 0.000 description 27
- 238000012545 processing Methods 0.000 description 20
- 238000001514 detection method Methods 0.000 description 18
- 230000003287 optical effect Effects 0.000 description 16
- 229920006395 saturated elastomer Polymers 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000003321 amplification Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 230000001276 controlling effect Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/625—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of smear
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/715—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame interline transfer [FIT]
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Studio Devices (AREA)
Description
本発明の目的は、特殊な光量調節装置を設けることなく、固体撮像素子から出力されるスミア等の雑音を低減することにある。
Claims (4)
- 電子増倍型撮像素子の電子増倍率制御手段と、前記電子増倍型撮像素子の所定の画素から出力される信号を取得する取得手段と、該取得手段で取得した信号のライン間平均を行う平均化手段と、該平均化手段で平均化された信号に前記電子増倍率制御手段の電子増倍率に応じて所定の低レベルサプレスと高レベルサプレスを施すサプレス手段と、前記電子増倍型撮像素子の所定の画素以外の画素から出力される画像信号を取得する取得手段と、該取得手段で取得した画像信号から前記サプレス手段でサプレスされた信号を減算する減算手段とを有することを特徴とする電子増倍型撮像素子を有する撮像装置。
- 請求項1に記載の電子増倍型撮像素子を有する撮像装置において、
更に前記平均化手段で平均化された信号と所定のレベルを比較する比較手段と、前記サプレス手段の出力を前記比較手段の比較結果に応じて切断する切替手段とを有することを特徴とする撮像装置。 - 電子増倍型撮像素子の電子増倍率を制御し、前記電子増倍型撮像素子の所定の画素から出力される信号を取得し、該取得した信号のライン間平均化し、該平均化された信号に前記電子増倍率に応じて所定の低レベルと高レベルのサプレスを施し、前記電子増倍型撮像素子の所定の画素以外の画素から出力される画像信号を取得し、該取得した画像信号から前記サプレスされた信号を減算することを特徴とする電子増倍型撮像素子を有する撮像装置の雑音低減方法。
- 請求項3に記載の電子増倍型撮像素子を有する撮像装置の雑音低減方法において、
更に前記平均化された信号は所定のレベルと比較し、比較結果に応じて前記画像信号から前記サプレスされた信号を減算することを特徴とする雑音低減方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007007533A JP4268643B2 (ja) | 2007-01-17 | 2007-01-17 | 撮像装置およびその雑音低減方法 |
KR1020080005158A KR100909932B1 (ko) | 2007-01-17 | 2008-01-17 | 촬상장치 및 그 잡음저감방법 |
US12/007,917 US7990442B2 (en) | 2007-01-17 | 2008-01-17 | Image pickup device and noise reduction method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007007533A JP4268643B2 (ja) | 2007-01-17 | 2007-01-17 | 撮像装置およびその雑音低減方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008177709A JP2008177709A (ja) | 2008-07-31 |
JP4268643B2 true JP4268643B2 (ja) | 2009-05-27 |
Family
ID=39617449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007007533A Active JP4268643B2 (ja) | 2007-01-17 | 2007-01-17 | 撮像装置およびその雑音低減方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7990442B2 (ja) |
JP (1) | JP4268643B2 (ja) |
KR (1) | KR100909932B1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7948536B2 (en) * | 2008-05-29 | 2011-05-24 | Sri International | Gain matching for electron multiplication imager |
JP5301302B2 (ja) * | 2009-01-30 | 2013-09-25 | 株式会社日立国際電気 | 撮像装置 |
JP5237844B2 (ja) | 2009-01-30 | 2013-07-17 | 浜松ホトニクス株式会社 | 固体撮像装置 |
JP2011243781A (ja) | 2010-05-19 | 2011-12-01 | Hamamatsu Photonics Kk | 量子カスケードレーザ |
JP2012175328A (ja) * | 2011-02-21 | 2012-09-10 | Panasonic Corp | 撮像装置、撮像方法及びプログラム |
JP6216667B2 (ja) * | 2014-03-12 | 2017-10-18 | 東芝デベロップメントエンジニアリング株式会社 | 画像処理装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2151430A (en) * | 1983-11-30 | 1985-07-17 | Hitachi Ltd | Solid-state imaging system with smear suppression circuits |
JP2700034B2 (ja) | 1989-01-27 | 1998-01-19 | 株式会社日立製作所 | 撮像記録再生装置 |
KR920010512B1 (ko) * | 1989-01-27 | 1992-11-30 | 가부시끼가이샤 히다찌세이사꾸쇼 | 촬상장치 |
JP3998229B2 (ja) * | 1999-09-08 | 2007-10-24 | カシオ計算機株式会社 | 撮像装置およびその信号処理方法 |
GB0226014D0 (en) | 2002-11-08 | 2002-12-18 | Nokia Corp | Camera-LSI and information device |
GB0316994D0 (en) * | 2003-07-21 | 2003-08-27 | E2V Tech Uk Ltd | Smear reduction in CCD images |
JP4367910B2 (ja) * | 2003-10-02 | 2009-11-18 | キヤノン株式会社 | 固体撮像装置 |
-
2007
- 2007-01-17 JP JP2007007533A patent/JP4268643B2/ja active Active
-
2008
- 2008-01-17 KR KR1020080005158A patent/KR100909932B1/ko not_active IP Right Cessation
- 2008-01-17 US US12/007,917 patent/US7990442B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100909932B1 (ko) | 2009-07-29 |
US20080170138A1 (en) | 2008-07-17 |
JP2008177709A (ja) | 2008-07-31 |
US7990442B2 (en) | 2011-08-02 |
KR20080067983A (ko) | 2008-07-22 |
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