JP2010174338A - Cvd装置 - Google Patents
Cvd装置 Download PDFInfo
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- JP2010174338A JP2010174338A JP2009019142A JP2009019142A JP2010174338A JP 2010174338 A JP2010174338 A JP 2010174338A JP 2009019142 A JP2009019142 A JP 2009019142A JP 2009019142 A JP2009019142 A JP 2009019142A JP 2010174338 A JP2010174338 A JP 2010174338A
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- 239000000758 substrate Substances 0.000 claims abstract description 121
- 239000000463 material Substances 0.000 claims description 34
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000003575 carbonaceous material Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 230000000052 comparative effect Effects 0.000 description 20
- 239000007789 gas Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 19
- 239000002296 pyrolytic carbon Substances 0.000 description 19
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 229910021382 natural graphite Inorganic materials 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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Abstract
【解決手段】 炭素質基材5を支持部材により支持した状態で、内部にガスを導入することにより、炭素質基材5の表面にSiC被膜を形成するCVD装置において、上記支持部材は、上記炭素質基材5が載置されて炭素質基材の下部を支持する下部支持部材6と、上記炭素質基材5の上部を支持する上部支持部材13とを有し、この上部支持部材13は上記炭素質基材5の外周縁に設けられると共に、この上部支持部材13にはV字状の溝13dが形成され、このV字状の溝13dにより構成される炭素質基材配置空間17内には、十分な遊びを有する状態で上記炭素質基材5が配置されることを特徴とする。
【選択図】図2
Description
そこで、図20に示すように、サセプター自立式のCVD装置が提案されている。具体的には、当該CVD装置においては、先端先細り状の支持台50のナイフエッジ部50aに炭素質基材51を載置すると共に、炭素質基材51の両面をピン52で支持するという構造となっている。このような構造であれば、孔を有しないサセプターにも適用でき、しかも、回転支持杵を作動させるための駆動手段等が不要となるので、CVD装置の生産コストが高騰したり、CVD装置が大型化したりするのを防止することができる。
加えて、炭素質基材は自立式であり、しかも、上部支持部材で完全に固定されないため、炭素質基材に大きな外力が加わることがないので、サセプターに反りが発生するのを抑制できる。
更に、回転支持秤などの駆動手段等を別途必要としないので、CVD装置の生産コストの高騰や、CVD装置の大型化を招来するのを防止できる。
上部支持部材の配置位置を炭素質基材の上端位置以外の位置に設けると、炭素質基材の倒れ角が大きくなる。このため、ガス流による風力では炭素質基材が十分に揺動できなくなって、炭素質基材の一部がコーティングされないという不都合が生じうることを考慮したものである。また、サセプターへの原料ガスの流れを妨げない上でも好都合となる。
遊びが2mmを超えると、炭素質基材の倒れ角が大きくなって、上記と同様、炭素質基材の一部がコーティングされないという不都合が生じる一方、遊びが1mm未満になると、常に接触していなくても原料ガスの流路が狭いために流れ難くなり、基材の一部がコーティングされない不都合のため好ましくない。また、上部支持部材の加工精度を向上させなければならず、コストの高騰を招くからである。
2枚の支持板により形成される炭素質基材配置空間が略V字状であれば、上部支持部材を上下させるだけで、遊び量を調整することができる。
上記構成であれば、熱分解炭素質膜はSiC被膜よりも強度が弱いことに起因して、下部支持部材からサセプターを取り外した場合に、サセプターからSiC被膜が剥離するのを抑制できる。
上記構成であっても、上記と同様の理由により、下部支持部材からサセプターを取り外した場合に、サセプターからSiC被膜が剥離するのを抑制できる。また、この場合には、SiC被膜形成毎に下部支持部材を交換する必要がなく、熱分解炭素質層が形成された熱膨張シートのみを交換すれば良いので、生産性が向上する。更に、熱膨張シートは可撓性に富んでいるので、下部支持部材に炭素質基材を載置したときのクッション性に優れる。したがって、載置時において、炭素質基材に欠け等が生じるのを抑制できる。特に、炭素質基材が大きくて重量が大きい場合には、当該作用効果が十分に発揮される。
CVD装置の内部においては、中央部と周辺部とでは原料ガス供給部からの距離が異なるが、各炭素質基材は装置の中心から等距離となるように配置されていれば、炭素質基材の配置位置による原料ガス供給部からの距離の差異は解消されるので、何れのサセプターにおいても、そのそり量を低減できる。
先ず、図10(a)(b)に示すように、下部支持部材6上に炭素質基材5を配置し、更に、炭素質基材5上に上部支持部材13を配置する。次に、図10(c)(d)に示すように、嵌め合せ棒4aに、嵌め合せ棒4aの直径より若干大きな内径を有する嵌め合せ筒11を嵌め込む。そして嵌め込みが終了すると、図10(e)(f)に示すように、準備終了状態となる。尚、炭素質基材5と上部支持部材13の溝13dとの距離L7が小さくなり過ぎるような場合には、例えば、図11に示すように、嵌め合せ棒4aにリング状の調節部材21を嵌め込むことにより、距離L7を調整することが可能である。
(1)図12に示すように、台座1の延出部1a上に直接下部支持部材6を配置するのではなく、伸縮可能な支持棒22を介して下部支持部材6を配置すれば、短尺の炭素質基材5にも対応することができる。したがって、小ロットのものが存在する場合でも大ロットのものと同時に処理できるので、生産性を一層向上させることができる。
(6)上記構成の上部支持部材13では、2つの支持板(V字状の溝13dを形成する2つの壁)が一体的に形成されているが、このような構造に限定するものではなく、別体に形成しても良い。
〔実施例1〕
上記発明を実施するための形態の本文で示したCVD装置を用いてサセプターを作製した。尚、炭素質基材(サセプター)としては、直径8インチ、厚さ6mmのものを用いた。このことは、下記実施例2及び下記比較例1〜3においても同様である。
このようにして作製したサセプターを、以下、本発明サセプターA1と称する。
上記発明を実施するための形態における(その他の事項)の(5)で示したCVD装置を用いてサセプターを作製した。
このようにして作製したサセプターを、以下、本発明サセプターA2と称する。
炭素質基材を支持ピンにより複数点で支持しつつ、炭素質基材を横向き(寝かせた状態)に配置したCVD装置を用いてサセプターを作製した。
このようにして作製したサセプターを、以下、比較サセプターZ1と称する。
従来の技術の図20で説明したCVD装置を用いてサセプターを作製した。
このようにして作製したサセプターを、以下、比較サセプターZ2と称する。
図18に示すように、上部支持部材13の本体部13cと炭素質基材5とを常時接触させると共に、下部支持部材6における本体部8aの外表面に熱分解炭素層8bを形成しないCVD装置を用いてサセプターを作製した。
このようにして作製したサセプターを、以下、比較サセプターZ3と称する。
上記本発明サセプターA1、A2及び比較サセプターZ1〜Z3の反り量、色ムラ発生率、外観、及び、SiC被膜剥離の有無について調べたので、その結果を表1に示す。尚、実験条件(被膜形成条件)は、以下の通りである。
・実験条件
装置内の圧力:0.1〜760Torr
炉内の温度:1150〜1500℃
導入ガス:CH3SiCl3 (メチルトリクロロシラン)と、
キャリアガスとして水素ガス
SiC被膜の膜厚:40〜60μm
6:下部支持部材
7:本体部
8:接点部
8a:本体部
8b:熱分解炭素層
13:上部支持部材
13d:溝
13e:ナイフエッジ
Claims (7)
- 炭素質基材を支持部材により支持した状態で、内部にガスを導入することにより、炭素質基材の表面にSiC被膜を形成するCVD装置において、
上記支持部材は、上記炭素質基材が載置されて炭素質基材の下部を支持する下部支持部材と、上記炭素質基材の上部を支持する上部支持部材とを有し、この上部支持部材は上記炭素質基材の外周縁に設けられると共に、2枚の支持板を備え、上記支持板間に形成された炭素質基材配置空間内に、十分な遊びを有する状態で上記炭素質基材が配置されることを特徴とするCVD装置。 - 上記上部支持部材は上記炭素質基材の上端位置に配置されている、請求項1に記載のCVD装置。
- 上記遊びが1mm以上2mm以下である、請求項1又は2に記載のCVD装置。
- 上部支持部材において、一体型の上記2枚の支持板により形成される炭素質基材配置空間が略V字状である、請求項1〜3の何れか1項に記載のCVD装置。
- 上記下部支持部材の表面には熱分解炭素質層が存在する、請求項1〜4の何れか1項に記載のCVD装置。
- 上記下部支持部材と上記熱分解炭素質層との間には、熱膨張シートが存在する、請求項5に記載のCVD装置。
- 複数の上記炭素質基材の表面にSiC被膜を形成する場合に、各炭素質基材は装置の中心から等距離となるように配置される、請求項1〜6の何れか1項に記載のCVD装置。
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CN201080003809XA CN102272352B (zh) | 2009-01-30 | 2010-01-29 | Cvd装置 |
US13/146,463 US20110283944A1 (en) | 2009-01-30 | 2010-01-29 | Cvd apparatus |
EP10735890.5A EP2385153A4 (en) | 2009-01-30 | 2010-01-29 | CVD DEVICE |
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CN103717784A (zh) * | 2011-10-14 | 2014-04-09 | 东洋炭素株式会社 | Cvd装置、使用了该cvd装置的基座的制造方法、及基座 |
JP2020505513A (ja) * | 2017-01-23 | 2020-02-20 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板のためのホルダ |
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US10961621B2 (en) * | 2015-06-04 | 2021-03-30 | Svagos Technik, Inc. | CVD reactor chamber with resistive heating and substrate holder |
CN110684956B (zh) * | 2019-10-21 | 2022-02-01 | 江苏菲沃泰纳米科技股份有限公司 | 柔性物品镀膜治具及其罩体 |
CN111501019A (zh) * | 2020-05-13 | 2020-08-07 | 深圳市纳设智能装备有限公司 | 一种用于cvd设备的反应室涡轮结构 |
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JP2020505513A (ja) * | 2017-01-23 | 2020-02-20 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板のためのホルダ |
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US20110283944A1 (en) | 2011-11-24 |
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CN102272352A (zh) | 2011-12-07 |
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