WO2010087428A1 - Cvd装置 - Google Patents
Cvd装置 Download PDFInfo
- Publication number
- WO2010087428A1 WO2010087428A1 PCT/JP2010/051200 JP2010051200W WO2010087428A1 WO 2010087428 A1 WO2010087428 A1 WO 2010087428A1 JP 2010051200 W JP2010051200 W JP 2010051200W WO 2010087428 A1 WO2010087428 A1 WO 2010087428A1
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- WIPO (PCT)
- Prior art keywords
- carbonaceous
- carbonaceous substrate
- support member
- cvd apparatus
- base material
- Prior art date
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- 239000000758 substrate Substances 0.000 claims description 120
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 6
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- 239000000463 material Substances 0.000 abstract description 38
- 238000004519 manufacturing process Methods 0.000 abstract description 8
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- 239000007789 gas Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 19
- 239000002296 pyrolytic carbon Substances 0.000 description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
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- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 229910021382 natural graphite Inorganic materials 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Images
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
- C04B41/5057—Carbides
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/87—Ceramics
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Definitions
- the present invention relates to a CVD apparatus for forming a SiC film on the surface of a carbonaceous substrate.
- a susceptor used for semiconductor epitaxial growth is made of a material in which a SiC coating layer is formed on the surface of a carbonaceous substrate.
- the formation of the SiC film on the surface of the carbonaceous substrate is usually carried out by directly subjecting a halogenated organosilicon compound containing a carbon source such as a hydrocarbon to a pyrolysis reaction in a reducing airflow, directly on the surface of the carbonaceous substrate.
- a CVD method chemical vapor deposition method
- the film was formed with the carbonaceous substrate sideways (in a laid state) while supporting the carbonaceous substrate at a plurality of points.
- this method has the following problems.
- the SiC film Since the SiC film is formed at a high temperature, warpage occurs in the susceptor, and the warpage becomes remarkable particularly when the thickness of the susceptor is small. Further, when the film is formed with the carbonaceous substrate facing sideways, the SiC film is formed in a state where particles are present on the surface of the carbonaceous substrate. For these reasons, there is a problem that the quality of the susceptor decreases.
- the carbonaceous base material is suspended on a rotating support rod having a cross-sectional area smaller than the diameter of the through hole of the carbonaceous base material, thereby continuously supporting the carbonaceous base material support contacts.
- the proposal of making it move is made (refer the following patent document 2). With such a proposal, the above problems (1) and (2) can be solved.
- the proposal shown in Patent Document 2 can be applied only to a susceptor having a hole, and additionally requires a driving means for operating the rotary support rod, which increases the production cost of the CVD apparatus, A new problem such as an increase in the size of the apparatus arises. Therefore, as shown in FIG. 20, a susceptor self-supporting CVD apparatus has been proposed.
- the carbonaceous base material 51 is placed on the knife edge portion 50a of the tip tapered support base 50, and both surfaces of the carbonaceous base material 51 are supported by the pins 52. It has become. With such a structure, it can be applied to a susceptor having no holes, and driving means for operating the rotary support rod is not necessary, so that the production cost of the CVD apparatus increases, An increase in size can be prevented.
- the CVD apparatus has a structure in which a SiC film is formed on the carbonaceous substrate 51 while rotating the support base 50.
- a source gas supply section is provided at the central portion and the peripheral portion. The flow rate and flow velocity of the reacting raw material gas are different because the distance from is different. For this reason, when the carbonaceous substrate 51 is arranged in a straight line as in a conventional CVD apparatus, the coating thickness varies depending on the arrangement position of the carbonaceous substrate 51, and the amount of warpage of the counterbore surface or the counterbore 51a is extremely large. There was a problem that it might become large.
- an object of the present invention is to provide a CVD apparatus capable of dramatically improving the quality and productivity of a susceptor without causing an increase in production cost and an increase in the size of the apparatus.
- the present invention provides a CVD apparatus for forming a SiC coating on the surface of a carbonaceous substrate by introducing a gas into the interior while the carbonaceous substrate is supported by a support member.
- the support member has a lower support member on which the carbonaceous substrate is placed and supports the lower portion of the carbonaceous substrate, and an upper support member that supports the upper portion of the carbonaceous substrate, and the upper support member Is provided on the outer peripheral edge of the carbonaceous base material and includes two support plates, and the carbonaceous base material has sufficient play in the carbonaceous base material arrangement space formed between the support plates.
- a material is arranged.
- the support (holding) at the upper end of the carbonaceous substrate is performed by two support plates, an external force is applied to the carbonaceous substrate and the carbonaceous substrate is rotated or displaced. Even if this occurs, the carbonaceous substrate can be prevented from falling during the formation of the SiC film. Moreover, the fall of the adjacent carbonaceous base material resulting from the fall of one carbonaceous base material can also be prevented.
- the carbonaceous substrate is disposed between the support plates in a state having sufficient play, when the gas is introduced into the apparatus, the carbonaceous substrate is supported by the wind force generated by the gas flow. Or the other support plate. That is, since the carbonaceous substrate is intermittently in contact with the main body of the upper support member, it is possible to avoid the disadvantage that a part of the carbonaceous substrate is not coated (that is, the SiC coating is uniform on the surface of the carbonaceous substrate). Coated). Further, since the upper support member is provided on the outer peripheral edge of the carbonaceous substrate, unevenness in the film thickness of the SiC film (color unevenness due to this) due to the upper support member entering the counterbore of the carbonaceous substrate. Can be prevented from occurring. In addition, since the carbonaceous substrate is self-supporting and is not completely fixed by the upper support member, a large external force is not applied to the carbonaceous substrate, so that the susceptor can be prevented from warping.
- the amount of warpage is small, the color unevenness generation rate is suppressed, and the appearance is kept good, so that the quality of the susceptor can be improved. Furthermore, since a driving means such as a rotary support scale is not required separately, it is possible to prevent a rise in the production cost of the CVD apparatus and an increase in the size of the CVD apparatus.
- the upper support member is preferably disposed at the upper end position of the carbonaceous substrate. If the arrangement position of the upper support member is provided at a position other than the upper end position of the carbonaceous substrate, the tilt angle of the carbonaceous substrate increases. For this reason, it is considered that the inconvenience that the carbonaceous base material cannot be sufficiently swung by the wind power generated by the gas flow, and a part of the carbonaceous base material is not coated. In addition, it is advantageous in that the flow of the raw material gas to the susceptor is not hindered.
- the play is preferably 1 mm or more and 2 mm or less. If the play exceeds 2 mm, the tilt angle of the carbonaceous substrate becomes large, and as in the above case, a part of the carbonaceous substrate is not coated. On the other hand, if the play is less than 1 mm, it is always in contact. Even if not, it is difficult to flow because the flow path of the source gas is narrow, and it is not preferable because a part of the base material is not coated. Moreover, it is because the processing precision of an upper support member must be improved and a cost rise is caused.
- the carbonaceous substrate arrangement space formed by the two integrated support plates is substantially V-shaped. If the carbonaceous substrate arrangement space formed by the two support plates is substantially V-shaped, the play amount can be adjusted by simply moving the upper support member up and down.
- a pyrolytic carbonaceous layer exists on the surface of the lower support member. If it is the said structure, it can suppress that a SiC film peels from a susceptor, when a susceptor is removed from a lower support member resulting from the strength of a pyrolytic carbonaceous film being weaker than a SiC film.
- a thermal expansion sheet on which a pyrolytic carbonaceous layer is formed is present on the surface of the lower support member. Even if it is the said structure, when a susceptor is removed from the lower support member for the same reason as above, it can suppress that a SiC film peels from a susceptor. Further, in this case, it is not necessary to replace the lower support member every time the SiC film is formed, and only the thermal expansion sheet on which the pyrolytic carbonaceous layer is formed needs to be replaced, so that productivity is improved. Furthermore, since the thermal expansion sheet is rich in flexibility, it has excellent cushioning properties when a carbonaceous substrate is placed on the lower support member. Therefore, it is possible to prevent the carbonaceous base material from being chipped during mounting. In particular, when the carbonaceous substrate is large and has a large weight, the effect is sufficiently exhibited.
- each carbonaceous substrate When forming a SiC film on the surface of a plurality of the above-mentioned carbonaceous substrates, it is desirable to arrange each carbonaceous substrate so that it may become equidistant from the center of an apparatus.
- the distance from the source gas supply unit differs between the central part and the peripheral part, but if each carbonaceous substrate is arranged so as to be equidistant from the center of the apparatus, the carbonaceous substrate Since the difference in the distance from the source gas supply unit due to the arrangement position of the material is eliminated, the amount of warpage can be reduced in any susceptor.
- FIG. 1 It is a perspective view which shows the internal structure of the CVD apparatus of this invention. It is a perspective view which shows a lower support member. It is a figure which shows a lower support member, Comprising: The figure (a) is a side view, The figure (b) is a front view, The figure (c) is a sectional view taken on the line BB of the figure (b). . It is a perspective view which shows the main-body part of a lower support member. It is a figure which shows the main-body part of a lower supporting member, Comprising: The figure (a) is a side view, The figure (b) is a front view, The figure (c) is the sectional view on the AA line of the figure (b). FIG.
- FIG. 1 It is a perspective view which shows the contact part of a lower support member. It is a figure which shows the contact part of a lower support member, Comprising: The figure (a) is a front view, The figure (b) is a bottom view, The figure (c) is a side view. It is a figure which shows an upper support member, Comprising: The figure (a) is a front view, The figure (b) is a perspective view. It is explanatory drawing which shows the relationship between an upper supporting member and a carbonaceous base material.
- FIG. 1 It is a figure which shows the support procedure of a carbonaceous base material, Comprising: The same figure (a) (b) is the front view and side view which show the state which has arrange
- the drawings (c) and (d) are a front view and a side view showing a state in which the fitting tube is fitted into the fitting rod, and FIGS. (E) and (f) show the support end state of the carbonaceous substrate. It is the front view and side view which show. It is explanatory drawing which shows the relationship between an upper support member and a lower support member. It is a perspective view which shows the modification of the internal structure in the CVD apparatus of this invention.
- the CVD apparatus of the present invention includes a pedestal 1, a support shaft 2 fixed to the center of the pedestal 1, a support rod 4 extending radially from the support shaft 2, A support ring 3 fixed to the outer end of the support bar 4 and integrated with the support bar 4 is provided, and these rotate together as the apparatus is operated.
- the main body portion 7 and the contact portion 8 placed on the upper portion of the main body portion 7 are constituted.
- the main body portion 7 is fixed to the pedestal 1 by fitting into a protrusion (not shown) protruding from the extending portion 1a of the pedestal 1 inside.
- the upper surface 7e of the convex portion 7b serves as a mounting surface on which the contact portion 8 is mounted, and the height L1 of the projection 7d formed at both ends of the upper surface 7e [see FIG. 5B] Is larger than the thickness L2 of the contact portion 8 (see FIG. 7B).
- the contact portion 8 includes a main body portion 8a made of graphite and a pyrolytic carbon layer 8b formed on the outer surface of the main body portion 8a.
- the outer shape of the contact portion 8 is substantially semicircular, and its length L3 (see FIG. 7C) is the length L4 of the upper surface 7e of the convex portion 7b [FIG. 5B]. It is configured to be slightly smaller than the reference.
- a U-shaped groove 8c is formed on the lower surface of the main body portion 8a, and its width L5 is slightly smaller than the width L6 of the upper surface 7e of the convex portion 7b [see FIG. 5 (a)].
- the contact portion 8 can be smoothly arranged on the upper surface 7 e of the main body portion 7. Further, since the pyrolytic carbon layer 8b has a lower strength than the SiC coating formed by the CVD apparatus, the carbonaceous substrate 5 is removed from the CVD apparatus after the SiC coating is formed on the carbonaceous substrate 5. At this time, it is possible to prevent the SiC coating from being peeled off from the carbonaceous substrate 5.
- the pyrolytic carbon layer 8b is not limited to the configuration formed only on the semicircular surface as described above, and may be formed on the entire outer surface of the main body 8a.
- the pyrolytic carbon layer 8b can be formed by a generally known method, and an example thereof is shown below. First, after the main body 8a is placed in the processing furnace, the pressure in the furnace is maintained at 0.1 to 10 Torr, the temperature in the furnace is maintained at 1600 to 2000 ° C., and hydrocarbon gas such as methane gas or propane gas, hydrogen Introduce gas. Then, since the gas is thermally decomposed in the furnace, the pyrolyzed carbon is deposited on the surface of the main body portion 8a, and the pyrolytic carbon layer 8b is formed on the surface of the main body portion 8a. In order to improve the purity of the pyrolytic carbon layer 8b, it is desirable to perform heat treatment at about 2000 ° C.
- the deposited carbon tends to become sparse, and further, by changing the processing temperature and other conditions, it becomes a highly oriented structure or a structure of a turbulent structure. Need to be implemented.
- a cylindrical fitting rod 4a is erected on the upper surface of the support rod 4, and the fitting rod 4a has an inner diameter slightly larger than the diameter of the fitting rod 4a.
- the fitting cylinder 11 is fitted. Adjacent fitting cylinders 11 are fixed to each other by a connecting rod 12, and an upper support member 13 is fixed to the outer peripheral edge of the carbonaceous substrate 5 at a substantially central portion of the connecting rod 12. .
- the upper support member 13 is formed with an attachment portion 13b for attachment to the connecting rod 12 on the upper surface of the base 13a, and on the lower surface of the base 13a.
- a main body 13c is formed.
- a V-shaped groove 13d that supports the upper end of the carbonaceous substrate 5 is formed in the lower part of the main body 13c, and the space formed by the groove 13d constitutes the carbonaceous substrate arrangement space 17. To do. Further, the inner surface of the V-shaped groove 13d is a knife edge 13e having a tapered tip, whereby the contact area with the carbonaceous substrate 5 can be reduced, and the thickness of the SiC coating is made more uniform. .
- the support (holding) at the upper end of the carbonaceous base material 5 is two support plates (two walls forming the V-shaped groove 13d, and is supported by a pin. Therefore, even if a force is applied to the carbonaceous substrate 5 and the carbonaceous substrate 5 is misaligned, the carbonaceous substrate 5 may fall down during the formation of the SiC film. Can be suppressed.
- the distance L7 between the carbonaceous substrate 5 and the groove 13d is preferably about 1 to 2 mm. This is due to the following reason. That is, as shown in FIG. 9, since the carbonaceous substrate 5 is rotated by the gas flow in the CVD apparatus and the rotational force of the apparatus, the carbonaceous substrate 5 is brought into contact with one knife edge 13e 1 or the other knife edge 13e 2 . Or abut. Thereby, the inconvenience that a SiC film is not formed in a part of carbonaceous base material 5 is avoided.
- the distance L7 between the carbonaceous base material 5 and the groove 13d is too large, the tilt angle ⁇ of the carbonaceous base material 5 becomes large, and the carbonaceous base material 5 has the other knife edge due to the gas flow in the CVD apparatus.
- the SiC film is not formed on a part of the carbonaceous substrate 5.
- the distance L7 between the carbonaceous substrate 5 and the groove 13d is restricted so as to be too small, the flow path of the source gas is narrow even if it is not always in contact, so that it is not coated or the groove 13d is processed. This is because the accuracy must be improved and the cost increases.
- the distance L7 between the carbonaceous substrate 5 and the groove 13d may be further increased if the length of the carbonaceous substrate 5 (height when standing up) is large.
- the distance L7 is preferably 2 mm.
- FIGS. 10A and 10B the carbonaceous substrate 5 is disposed on the lower support member 6, and the upper support member 13 is disposed on the carbonaceous substrate 5.
- FIGS. 10C and 10D the fitting cylinder 11 having an inner diameter slightly larger than the diameter of the fitting bar 4a is fitted into the fitting bar 4a. Then, when the fitting is finished, the preparation is completed as shown in FIGS.
- a ring-shaped adjustment member 21 is attached to the fitting rod 4a.
- the distance L7 can be adjusted by fitting.
- the jigs 24 are arranged radially, and as shown in FIG. 13, the carbonaceous substrate 5 is arranged in a direction parallel to the radial direction and in a direction perpendicular to the radial direction.
- a forming process can also be performed.
- the groove 13d formed in the upper support member 13 is not limited to a V shape, and may be a U shape or a U shape as shown in FIG. However, in such a configuration, since the distance L7 between the carbonaceous substrate 5 and the groove 13d cannot be changed, it can be applied only to the carbonaceous substrate 5 having the same thickness.
- the arrangement position of the upper support member 13 is not limited to the upper end of the carbonaceous substrate 5, and may be arranged at an intermediate position of the carbonaceous substrate 5 as shown in FIG. 16. However, in this case, even when the distance L7 between the carbonaceous substrate 5 and the groove 13d is set to 1 to 2 mm as described above, ⁇ shown in FIG. 9 becomes large. Therefore, it is most desirable that the upper support member 13 is disposed at the upper end of the carbonaceous substrate 5.
- the pyrolytic carbon layer 8b is formed directly on the outer surface of the main body portion 8a.
- the present invention is not limited to such a configuration, and as shown in FIG. After the pyrolytic carbon layer 8b is formed on the outer surface of the expanded graphite sheet 26 having the same shape as the portion 8a, the outer surface of the main body portion 8a may be covered with this.
- the expanded graphite sheet 26 is a sheet-like graphite product produced by compressing and pressing acid-treated scaly natural graphite that has been subjected to high-temperature expansion treatment, and has flexibility.
- the sheet is preferably a high-purity product with few impurities, specifically, 20 ppm or less, particularly 10 ppm or less, and preferably 5 ppm or less.
- the pyrolytic carbon layer 8b can be formed by a method similar to the method of directly forming the pyrolytic carbon layer 8b directly on the outer surface of the main body portion 8a.
- two support plates two walls forming the V-shaped groove 13d are integrally formed.
- the present invention is not limited to such a structure. Alternatively, it may be formed separately.
- Example 1 A susceptor was manufactured using the CVD apparatus shown in the text of the mode for carrying out the invention. A carbonaceous substrate (susceptor) having a diameter of 8 inches and a thickness of 6 mm was used. The same applies to Example 2 and Comparative Examples 1 to 3 below. The susceptor thus produced is hereinafter referred to as the present invention susceptor A1.
- Example 2 A susceptor was produced using the CVD apparatus shown in (5) of (Other matters) in the embodiment for carrying out the invention.
- the susceptor thus produced is hereinafter referred to as the present invention susceptor A2.
- a susceptor was produced using a CVD apparatus in which the carbonaceous substrate was placed sideways (in a laid state) while the carbonaceous substrate was supported at a plurality of points by support pins.
- the susceptor thus produced is hereinafter referred to as a comparative susceptor Z1.
- Comparative Example 2 A susceptor was fabricated using the CVD apparatus described with reference to FIG. The susceptor thus produced is hereinafter referred to as comparative susceptor Z2.
- Comparative Example 3 As shown in FIG. 18, a CVD apparatus in which the main body portion 13 c of the upper support member 13 and the carbonaceous substrate 5 are always in contact with each other and the pyrolytic carbon layer 8 b is not formed on the outer surface of the main body portion 8 a in the lower support member 6. A susceptor was prepared using The susceptor thus produced is hereinafter referred to as comparative susceptor Z3.
- Table 1 shows the results of examining the warpage amount, color unevenness occurrence rate, appearance, and presence / absence of SiC coating peeling of the susceptors A1 and A2 of the present invention and the comparative susceptors Z1 to Z3.
- the experimental conditions are as follows. Experimental conditions Pressure in the apparatus: 0.1 to 760 Torr Furnace temperature: 1150-1500 ° C Introducing gas: CH 3 SiCl 3 (methyltrichlorosilane), Hydrogen gas as carrier gas SiC film thickness: 40-60 ⁇ m
- the carbonaceous substrate is intermittently in contact with the main body of the upper support member. Can be avoided (i.e., the surface of the carbonaceous substrate is uniformly coated with the SiC film). Therefore, in the susceptors A1 and A2 of the present invention, the amount of warpage is small and the color unevenness occurrence rate can be suppressed, so that the appearance is kept good. Moreover, since the upper end of the carbonaceous substrate is supported by the two plate-like members, even if the carbonaceous substrate is slightly displaced, the displacement is regulated at the initial stage. Therefore, it can suppress that a carbonaceous base material falls.
- a pyrolytic carbon layer having a lower peel strength than the SiC coating is formed directly or via expanded graphite on the main body of the lower support member.
- the SiC film can be prevented from peeling from the susceptor.
- pyrolytic carbon may adhere to the susceptor side.
- the thermal expansion coefficients of the SiC coating and pyrolytic carbon are greatly different, the pyrolytic carbon can be easily removed from the susceptor. .
- the carbonaceous substrate may be displaced from the knife edge, and the carbonaceous substrate may fall, or even fall to an adjacent carbonaceous substrate.
- the comparative susceptor Z2 it was recognized that a portion where the SiC film was not formed occurred and the color unevenness generation rate was increased.
- the uniform SiC film is not formed in this way, it is recognized that the amount of warpage is increased in the comparative susceptor Z2.
- the SiC film was directly formed on the carbonaceous substrate and the knife edge, peeling of the SiC film was observed when the comparative susceptor Z2 was removed from the apparatus.
- the carbonaceous substrate is always supported by the upper support member (that is, the carbonaceous substrate and the upper support member are always in contact). Therefore, it was recognized that a large stress was easily applied to the carbonaceous substrate during the heat treatment, and the amount of warpage of the comparative susceptor Z3 was increased.
- the pyrolytic carbon film is not formed on the surface of the lower support member, the color unevenness generation rate of the comparative susceptor Z3 increases, and when the comparative susceptor Z3 is removed from the apparatus, the SiC film is peeled off. It was.
- the CVD apparatus of the present invention can be used for manufacturing a susceptor for semiconductor epitaxial growth.
- Carbonaceous substrate 6 Lower support member 7: Main body part 8: Contact part 8a: Main body part 8b: Pyrolytic carbon layer 13: Upper support member 13d: Groove 13e: Knife edge
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Abstract
Description
そこで、図20に示すように、サセプター自立式のCVD装置が提案されている。具体的には、当該CVD装置においては、先端先細り状の支持台50のナイフエッジ部50aに炭素質基材51を載置すると共に、炭素質基材51の両面をピン52で支持するという構造となっている。このような構造であれば、孔を有しないサセプターにも適用でき、しかも、回転支持杵を作動させるための駆動手段等が不要となるので、CVD装置の生産コストが高騰したり、CVD装置が大型化したりするのを防止することができる。
更に、回転支持秤などの駆動手段等を別途必要としないので、CVD装置の生産コストの高騰や、CVD装置の大型化を招来するのを防止できる。
上部支持部材の配置位置を炭素質基材の上端位置以外の位置に設けると、炭素質基材の倒れ角が大きくなる。このため、ガス流による風力では炭素質基材が十分に揺動できなくなって、炭素質基材の一部がコーティングされないという不都合が生じうることを考慮したものである。また、サセプターへの原料ガスの流れを妨げない上でも好都合となる。
遊びが2mmを超えると、炭素質基材の倒れ角が大きくなって、上記と同様、炭素質基材の一部がコーティングされないという不都合が生じる一方、遊びが1mm未満になると、常に接触していなくても原料ガスの流路が狭いために流れ難くなり、基材の一部がコーティングされない不都合のため好ましくない。また、上部支持部材の加工精度を向上させなければならず、コストの高騰を招くからである。
2枚の支持板により形成される炭素質基材配置空間が略V字状であれば、上部支持部材を上下させるだけで、遊び量を調整することができる。
上記構成であれば、熱分解炭素質膜はSiC被膜よりも強度が弱いことに起因して、下部支持部材からサセプターを取り外した場合に、サセプターからSiC被膜が剥離するのを抑制できる。
上記構成であっても、上記と同様の理由により、下部支持部材からサセプターを取り外した場合に、サセプターからSiC被膜が剥離するのを抑制できる。また、この場合には、SiC被膜形成毎に下部支持部材を交換する必要がなく、熱分解炭素質層が形成された熱膨張シートのみを交換すれば良いので、生産性が向上する。更に、熱膨張シートは可撓性に富んでいるので、下部支持部材に炭素質基材を載置したときのクッション性に優れる。したがって、載置時において、炭素質基材に欠け等が生じるのを抑制できる。特に、炭素質基材が大きくて重量が大きい場合には、当該作用効果が十分に発揮される。
CVD装置の内部においては、中央部と周辺部とでは原料ガス供給部からの距離が異なるが、各炭素質基材は装置の中心から等距離となるように配置されていれば、炭素質基材の配置位置による原料ガス供給部からの距離の差異は解消されるので、何れのサセプターにおいても、そのそり量を低減できる。
先ず、図10(a)(b)に示すように、下部支持部材6上に炭素質基材5を配置し、更に、炭素質基材5上に上部支持部材13を配置する。次に、図10(c)(d)に示すように、嵌め合せ棒4aに、嵌め合せ棒4aの直径より若干大きな内径を有する嵌め合せ筒11を嵌め込む。そして嵌め込みが終了すると、図10(e)(f)に示すように、準備終了状態となる。尚、炭素質基材5と上部支持部材13の溝13dとの距離L7が小さくなり過ぎるような場合には、例えば、図11に示すように、嵌め合せ棒4aにリング状の調節部材21を嵌め込むことにより、距離L7を調整することが可能である。
(1)図12に示すように、台座1の延出部1a上に直接下部支持部材6を配置するのではなく、伸縮可能な支持棒22を介して下部支持部材6を配置すれば、短尺の炭素質基材5にも対応することができる。したがって、小ロットのものが存在する場合でも大ロットのものと同時に処理できるので、生産性を一層向上させることができる。
(6)上記構成の上部支持部材13では、2つの支持板(V字状の溝13dを形成する2つの壁)が一体的に形成されているが、このような構造に限定するものではなく、別体に形成しても良い。
〔実施例1〕
上記発明を実施するための形態の本文で示したCVD装置を用いてサセプターを作製した。尚、炭素質基材(サセプター)としては、直径8インチ、厚さ6mmのものを用いた。このことは、下記実施例2及び下記比較例1~3においても同様である。
このようにして作製したサセプターを、以下、本発明サセプターA1と称する。
上記発明を実施するための形態における(その他の事項)の(5)で示したCVD装置を用いてサセプターを作製した。
このようにして作製したサセプターを、以下、本発明サセプターA2と称する。
炭素質基材を支持ピンにより複数点で支持しつつ、炭素質基材を横向き(寝かせた状態)に配置したCVD装置を用いてサセプターを作製した。
このようにして作製したサセプターを、以下、比較サセプターZ1と称する。
従来の技術の図20で説明したCVD装置を用いてサセプターを作製した。
このようにして作製したサセプターを、以下、比較サセプターZ2と称する。
図18に示すように、上部支持部材13の本体部13cと炭素質基材5とを常時接触させると共に、下部支持部材6における本体部8aの外表面に熱分解炭素層8bを形成しないCVD装置を用いてサセプターを作製した。
このようにして作製したサセプターを、以下、比較サセプターZ3と称する。
上記本発明サセプターA1、A2及び比較サセプターZ1~Z3の反り量、色ムラ発生率、外観、及び、SiC被膜剥離の有無について調べたので、その結果を表1に示す。尚、実験条件(被膜形成条件)は、以下の通りである。
・実験条件
装置内の圧力:0.1~760Torr
炉内の温度:1150~1500℃
導入ガス:CH3SiCl3 (メチルトリクロロシラン)と、
キャリアガスとして水素ガス
SiC被膜の膜厚:40~60μm
6:下部支持部材
7:本体部
8:接点部
8a:本体部
8b:熱分解炭素層
13:上部支持部材
13d:溝
13e:ナイフエッジ
Claims (7)
- 炭素質基材を支持部材により支持した状態で、内部にガスを導入することにより、炭素質基材の表面にSiC被膜を形成するCVD装置において、
上記支持部材は、上記炭素質基材が載置されて炭素質基材の下部を支持する下部支持部材と、上記炭素質基材の上部を支持する上部支持部材とを有し、この上部支持部材は上記炭素質基材の外周縁に設けられると共に、2枚の支持板を備え、上記支持板間に形成された炭素質基材配置空間内に、十分な遊びを有する状態で上記炭素質基材が配置されることを特徴とするCVD装置。 - 上記上部支持部材は上記炭素質基材の上端位置に配置されている、請求項1に記載のCVD装置。
- 上記遊びが1mm以上2mm以下である、請求項1又は2に記載のCVD装置。
- 上部支持部材において、一体型の上記2枚の支持板により形成される炭素質基材配置空間が略V字状である、請求項1~3の何れか1項に記載のCVD装置。
- 上記下部支持部材の表面には熱分解炭素質層が存在する、請求項1~4の何れか1項に記載のCVD装置。
- 上記下部支持部材と上記熱分解炭素質層との間には、熱膨張シートが存在する、請求項5に記載のCVD装置。
- 複数の上記炭素質基材の表面にSiC被膜を形成する場合に、各炭素質基材は装置の中心から等距離となるように配置される、請求項1~6の何れか1項に記載のCVD装置。
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US10961621B2 (en) * | 2015-06-04 | 2021-03-30 | Svagos Technik, Inc. | CVD reactor chamber with resistive heating and substrate holder |
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CN110684956B (zh) * | 2019-10-21 | 2022-02-01 | 江苏菲沃泰纳米科技股份有限公司 | 柔性物品镀膜治具及其罩体 |
DE102019135183A1 (de) * | 2019-12-19 | 2021-06-24 | Oerlikon Surface Solutions Ag, Pfäffikon | Haltesystem zum Halten von Substraten |
CN111501019A (zh) * | 2020-05-13 | 2020-08-07 | 深圳市纳设智能装备有限公司 | 一种用于cvd设备的反应室涡轮结构 |
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US20110081487A1 (en) * | 2009-03-04 | 2011-04-07 | Brent Bollman | Methods and devices for processing a precursor layer in a group via environment |
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- 2010-01-29 CN CN201080003809XA patent/CN102272352B/zh not_active Expired - Fee Related
- 2010-01-29 WO PCT/JP2010/051200 patent/WO2010087428A1/ja active Application Filing
- 2010-01-29 KR KR1020117016059A patent/KR20110108350A/ko not_active Application Discontinuation
- 2010-01-29 EP EP10735890.5A patent/EP2385153A4/en not_active Withdrawn
- 2010-01-29 US US13/146,463 patent/US20110283944A1/en not_active Abandoned
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JPS63134663A (ja) | 1986-11-25 | 1988-06-07 | Tokai Carbon Co Ltd | カ−ボン基材面への被膜形成方法 |
JPH08195389A (ja) * | 1995-01-17 | 1996-07-30 | Fuji Electric Co Ltd | プラズマcvd用ウェハ保持具 |
JP2002249376A (ja) * | 2000-12-18 | 2002-09-06 | Toyo Tanso Kk | 低窒素濃度炭素系材料及びその製造方法 |
JP2003213429A (ja) | 2002-01-21 | 2003-07-30 | Tokai Carbon Co Ltd | Cvd装置及びcvd被膜形成法 |
JP2008530370A (ja) * | 2005-02-17 | 2008-08-07 | スネクマ・プロピュルシオン・ソリド | 化学蒸気浸透により薄い多孔質基体を高密度化する方法、及び当該基体のローディング装置 |
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Also Published As
Publication number | Publication date |
---|---|
EP2385153A4 (en) | 2016-01-27 |
US20110283944A1 (en) | 2011-11-24 |
JP5457043B2 (ja) | 2014-04-02 |
CN102272352A (zh) | 2011-12-07 |
KR20110108350A (ko) | 2011-10-05 |
EP2385153A1 (en) | 2011-11-09 |
JP2010174338A (ja) | 2010-08-12 |
CN102272352B (zh) | 2013-09-04 |
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