JP2010163690A5 - - Google Patents

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Publication number
JP2010163690A5
JP2010163690A5 JP2010045946A JP2010045946A JP2010163690A5 JP 2010163690 A5 JP2010163690 A5 JP 2010163690A5 JP 2010045946 A JP2010045946 A JP 2010045946A JP 2010045946 A JP2010045946 A JP 2010045946A JP 2010163690 A5 JP2010163690 A5 JP 2010163690A5
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JP
Japan
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main body
chamber
plasma
separation
substrate stage
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JP2010045946A
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English (en)
Japanese (ja)
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JP5189609B2 (ja
JP2010163690A (ja
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Publication of JP2010163690A5 publication Critical patent/JP2010163690A5/ja
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JP2010045946A 2008-07-31 2010-03-02 プラズマ処理装置 Active JP5189609B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010045946A JP5189609B2 (ja) 2008-07-31 2010-03-02 プラズマ処理装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008197582 2008-07-31
JP2008197582 2008-07-31
JP2010045946A JP5189609B2 (ja) 2008-07-31 2010-03-02 プラズマ処理装置

Related Parent Applications (1)

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JP2010504100A Division JP4580040B2 (ja) 2008-07-31 2009-07-30 プラズマ処理装置および電子デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2010163690A JP2010163690A (ja) 2010-07-29
JP2010163690A5 true JP2010163690A5 (cg-RX-API-DMAC7.html) 2011-05-26
JP5189609B2 JP5189609B2 (ja) 2013-04-24

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Family Applications (2)

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JP2010504100A Active JP4580040B2 (ja) 2008-07-31 2009-07-30 プラズマ処理装置および電子デバイスの製造方法
JP2010045946A Active JP5189609B2 (ja) 2008-07-31 2010-03-02 プラズマ処理装置

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JP2010504100A Active JP4580040B2 (ja) 2008-07-31 2009-07-30 プラズマ処理装置および電子デバイスの製造方法

Country Status (5)

Country Link
US (1) US8303785B2 (cg-RX-API-DMAC7.html)
JP (2) JP4580040B2 (cg-RX-API-DMAC7.html)
KR (1) KR101216790B1 (cg-RX-API-DMAC7.html)
CN (1) CN102105618B (cg-RX-API-DMAC7.html)
WO (1) WO2010013476A1 (cg-RX-API-DMAC7.html)

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US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9435029B2 (en) * 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US9287086B2 (en) 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US9287092B2 (en) 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
WO2012090482A1 (ja) 2010-12-28 2012-07-05 キヤノンアネルバ株式会社 半導体装置の製造方法および装置
US9087679B2 (en) * 2011-02-09 2015-07-21 Applied Materials, Inc. Uniformity tuning capable ESC grounding kit for RF PVD chamber
JP5654939B2 (ja) * 2011-04-20 2015-01-14 株式会社アルバック 成膜装置
TW201325326A (zh) * 2011-10-05 2013-06-16 Applied Materials Inc 電漿處理設備及其基板支撐組件
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US9210790B2 (en) 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
WO2014036000A1 (en) 2012-08-28 2014-03-06 Advanced Energy Industries, Inc. Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel
DE102013005868A1 (de) * 2013-04-05 2014-10-09 Leybold Optics Gmbh Vorrichtung zur Vakuumbehandlung von Substraten
WO2016021496A1 (ja) * 2014-08-08 2016-02-11 キヤノンアネルバ株式会社 スパッタ装置および処理装置
EP3387162A4 (en) * 2015-12-09 2019-07-24 Applied Materials, Inc. SYSTEM WITH CONFIGURATION FOR SPUTTER SEPARATION ON A SUBSTRATE, SHIELDING DEVICE FOR A SPUTTER SEPARATION CHAMBER, AND METHOD FOR PRODUCING AN ELECTRIC SHIELDING IN A SPUTTER SEPARATION CHAMBER
CN109473331B (zh) * 2017-09-08 2022-11-25 北京北方华创微电子装备有限公司 腔室屏蔽装置和半导体处理腔
PL3711080T3 (pl) 2017-11-17 2023-12-11 Aes Global Holdings, Pte. Ltd. Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
EP3711082B1 (en) 2017-11-17 2025-08-27 AES Global Holdings, Pte. Ltd. Improved application of modulating supplies in a plasma processing system
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
TWI792598B (zh) 2017-11-17 2023-02-11 新加坡商Aes 全球公司 用於在空間域和時間域上控制基板上的電漿處理之系統和方法，及相關的電腦可讀取媒體
CN111602235B (zh) 2018-01-29 2025-03-14 应用材料公司 用于在pvd处理中减少颗粒的处理配件几何形状
KR102071807B1 (ko) * 2018-10-31 2020-01-30 동국대학교 경주캠퍼스 산학협력단 듀오플라즈마트론의 교체형 중간전극판
JP7080349B2 (ja) * 2018-12-27 2022-06-03 株式会社アルバック 防着部材及び真空処理装置
KR20220031713A (ko) 2019-07-12 2022-03-11 에이이에스 글로벌 홀딩스 피티이 리미티드 단일 제어식 스위치를 갖는 바이어스 공급부
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
US20210391146A1 (en) * 2020-06-11 2021-12-16 Applied Materials, Inc. Rf frequency control and ground path return in semiconductor process chambers
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
JP7776233B2 (ja) * 2022-06-16 2025-11-26 東京エレクトロン株式会社 成膜装置
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3086095B2 (ja) * 1992-12-22 2000-09-11 キヤノン株式会社 スパッタリング装置
JP3563095B2 (ja) * 1993-10-28 2004-09-08 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2954028B2 (ja) * 1996-08-16 1999-09-27 山形日本電気株式会社 スパッタリング装置
JP4108354B2 (ja) * 2001-03-30 2008-06-25 キヤノンアネルバ株式会社 スパッタリング装置
JP4406188B2 (ja) * 2002-06-12 2010-01-27 キヤノンアネルバ株式会社 成膜装置
JP4451684B2 (ja) * 2004-03-17 2010-04-14 キヤノンアネルバ株式会社 真空処理装置
CN1315150C (zh) * 2004-11-12 2007-05-09 哈尔滨工业大学 等离子体脉冲注入的装置
WO2009035002A1 (ja) * 2007-09-11 2009-03-19 Canon Anelva Corporation 静電チャック
WO2009078094A1 (ja) * 2007-12-18 2009-06-25 Canon Anelva Corporation プラズマ処理装置
JP5324251B2 (ja) * 2008-05-16 2013-10-23 キヤノンアネルバ株式会社 基板保持装置

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