JP2010157602A - 化合物半導体装置及びその製造方法 - Google Patents
化合物半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP2010157602A JP2010157602A JP2008334793A JP2008334793A JP2010157602A JP 2010157602 A JP2010157602 A JP 2010157602A JP 2008334793 A JP2008334793 A JP 2008334793A JP 2008334793 A JP2008334793 A JP 2008334793A JP 2010157602 A JP2010157602 A JP 2010157602A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- compound semiconductor
- gan
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- 150000001875 compounds Chemical class 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 239000010410 layer Substances 0.000 description 206
- 238000000034 method Methods 0.000 description 38
- 229910002704 AlGaN Inorganic materials 0.000 description 25
- 238000002955 isolation Methods 0.000 description 19
- 230000005533 two-dimensional electron gas Effects 0.000 description 19
- 239000000758 substrate Substances 0.000 description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 13
- 239000010931 gold Substances 0.000 description 12
- 239000002344 surface layer Substances 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020175 SiOH Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/34—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being on the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7788—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
- H01L29/7832—Field effect transistors with field effect produced by an insulated gate with multiple gate structure the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
【解決手段】i−GaN層5(電子走行層)と、i−GaN層5(電子走行層)上方に形成されたn−GaN層7(化合物半導体層)と、n−GaN層7(化合物半導体層)上方に形成されたソース電極21s、ドレイン電極21d及びゲート電極21gと、が設けられている。そして、n−GaN層7(化合物半導体層)のソース電極21sとドレイン電極21dとの間の領域内でゲート電極21gから離間した部分にリセス部7a(凹部)が形成されている。
【選択図】図1
Description
先ず、第1の実施形態について説明する。図1は、第1の実施形態に係るGaN系HEMT(化合物半導体装置)の構造を示す断面図である。
次に、第2の実施形態について説明する。図6は、第2の実施形態に係るGaN系HEMT(化合物半導体装置)の構造を示す断面図である。
次に、第3の実施形態について説明する。第1及び第2の実施形態に係るGaN系HEMTの構造は横型構造であるのに対し、第3の実施形態に係るGaN系HEMTの構造は縦型構造である。図10は、第3の実施形態に係るGaN系HEMT(化合物半導体装置)の構造を示す断面図である。
電子走行層と、
前記電子走行層上方に形成された化合物半導体層と、
前記化合物半導体層上方に形成されたソース電極、ドレイン電極及びゲート電極と、
を有し、
前記化合物半導体層の前記ソース電極と前記ドレイン電極との間の領域内で前記ゲート電極から離間した部分に凹部が形成されていることを特徴とする化合物半導体装置。
前記凹部は、前記ソース電極と前記ゲート電極との間の領域内に形成されていることを特徴とする付記1に記載の化合物半導体装置。
前記凹部内に形成されたショットキー電極を有することを特徴とする付記1又は2に記載の化合物半導体装置。
前記ショットキー電極は接地されていることを特徴とする付記3に記載の化合物半導体装置。
前記ショットキー電極は前記ソース電極に接続されていることを特徴とする付記3又は4に記載の化合物半導体装置。
前記ショットキー電極には前記ゲート電極とは異なる電位が付与されることを特徴とする付記3乃至5のいずれか1項に記載の化合物半導体装置。
前記電子走行層と前記化合物半導体層との間に形成された電子供給層を有することを特徴とする付記1乃至6のいずれか1項に記載の化合物半導体装置。
前記凹部の内面に沿って形成された絶縁膜を有することを特徴とする付記1乃至7のいずれか1項に記載の化合物半導体装置。
前記化合物半導体層の前記凹部が形成された部分の厚さは10nm以下であることを特徴とする付記1乃至8のいずれか1項に記載の化合物半導体装置。
電子走行層と、
前記電子走行層上方に形成された化合物半導体層と、
前記化合物半導体層上方に形成されたゲート電極及びソース電極と、
前記電子走行層の下方に形成されたドレイン電極と、
を有し、
前記化合物半導体層の前記ソース電極と前記ゲート電極との間の領域内に凹部が形成されていることを特徴とする化合物半導体装置。
前記凹部内に形成されたショットキー電極を有することを特徴とする付記10に記載の化合物半導体装置。
前記ショットキー電極は接地されていることを特徴とする付記11に記載の化合物半導体装置。
前記ショットキー電極は前記ソース電極に接続されていることを特徴とする付記11又は12に記載の化合物半導体装置。
前記ショットキー電極には前記ゲート電極とは異なる電位が付与されることを特徴とする付記11乃至13のいずれか1項に記載の化合物半導体装置。
前記電子走行層と前記化合物半導体層との間に形成された電子供給層を有することを特徴とすることを特徴とする付記10乃至14のいずれか1項に記載の化合物半導体装置。
前記凹部の内面に沿って形成された絶縁膜を有することを特徴とする付記10乃至15のいずれか1項に記載の化合物半導体装置。
前記化合物半導体層の前記凹部が形成された部分の厚さは10nm以下であることを特徴とする付記10乃至16のいずれか1項に記載の化合物半導体装置。
電子走行層上方に化合物半導体層を形成する工程と、
前記化合物半導体層上方にソース電極、ドレイン電極及びゲート電極を形成する工程と、
を有し、
更に、前記化合物半導体層の前記ソース電極と前記ドレイン電極との間の領域内で前記ゲート電極から離間した部分に凹部を形成する工程を有することを特徴とする化合物半導体装置の製造方法。
電子走行層上方に化合物半導体層を形成する工程と、
前記化合物半導体層上方にゲート電極及びソース電極を形成する工程と、
前記電子走行層の下方にドレイン電極を形成する工程と、
を有し、
更に、前記化合物半導体層の前記ソース電極と前記ゲート電極との間の領域内に凹部を形成する工程を有することを特徴とする化合物半導体装置の製造方法。
前記凹部内にショットキー電極を形成する工程を有することを特徴とする付記18又は20に記載の化合物半導体装置の製造方法。
2、3:i−AlN層
4:GaN層
5:i−GaN層
6:n−AlGaN層
7:n−GaN層
7a:リセス部
21d:ドレイン電極
21g:ゲート電極
21r:リセス電極
21s:ソース電極
51:n−GaN層
52:i−AlN層
53:GaN層
54:i−GaN層
55:n−AlGaN層
56:n−GaN層
56a:リセス部
71d:ドレイン電極
71g:ゲート電極
71r:リセス電極
71s:ソース電極
Claims (10)
- 電子走行層と、
前記電子走行層上方に形成された化合物半導体層と、
前記化合物半導体層上方に形成されたソース電極、ドレイン電極及びゲート電極と、
を有し、
前記化合物半導体層の前記ソース電極と前記ドレイン電極との間の領域内で前記ゲート電極から離間した部分に凹部が形成されていることを特徴とする化合物半導体装置。 - 前記凹部は、前記ソース電極と前記ゲート電極との間の領域内に形成されていることを特徴とする請求項1に記載の化合物半導体装置。
- 前記凹部内に形成されたショットキー電極を有することを特徴とする請求項1又は2に記載の化合物半導体装置。
- 前記ショットキー電極は接地されていることを特徴とする請求項3に記載の化合物半導体装置。
- 前記ショットキー電極は前記ソース電極に接続されていることを特徴とする請求項3又は4に記載の化合物半導体装置。
- 電子走行層と、
前記電子走行層上方に形成された化合物半導体層と、
前記化合物半導体層上方に形成されたゲート電極及びソース電極と、
前記電子走行層の下方に形成されたドレイン電極と、
を有し、
前記化合物半導体層の前記ソース電極と前記ゲート電極との間の領域内に凹部が形成されていることを特徴とする化合物半導体装置。 - 前記凹部内に形成されたショットキー電極を有することを特徴とする請求項6に記載の化合物半導体装置。
- 前記ショットキー電極は接地されていることを特徴とする請求項7に記載の化合物半導体装置。
- 電子走行層上方に化合物半導体層を形成する工程と、
前記化合物半導体層上方にソース電極、ドレイン電極及びゲート電極を形成する工程と、
を有し、
更に、前記化合物半導体層の前記ソース電極と前記ドレイン電極との間の領域内で前記ゲート電極から離間した部分に凹部を形成する工程を有することを特徴とする化合物半導体装置の製造方法。 - 電子走行層上方に化合物半導体層を形成する工程と、
前記化合物半導体層上方にゲート電極及びソース電極を形成する工程と、
前記電子走行層の下方にドレイン電極を形成する工程と、
を有し、
更に、前記化合物半導体層の前記ソース電極と前記ゲート電極との間の領域内に凹部を形成する工程を有することを特徴とする化合物半導体装置の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008334793A JP5564791B2 (ja) | 2008-12-26 | 2008-12-26 | 化合物半導体装置及びその製造方法 |
EP13189916.3A EP2701200B1 (en) | 2008-12-26 | 2009-09-29 | Compound semiconductor device and manufacturing method of the same |
EP09171693.6A EP2202801B1 (en) | 2008-12-26 | 2009-09-29 | Compound semiconductor device and manufacturing method of the same |
CN200910205387A CN101771075A (zh) | 2008-12-26 | 2009-10-21 | 化合物半导体器件及其制造方法 |
CN201210211258.7A CN102723362B (zh) | 2008-12-26 | 2009-10-21 | 化合物半导体器件及其制造方法 |
US12/618,384 US8198653B2 (en) | 2008-12-26 | 2009-11-13 | Compound semiconductor device and manufacturing method of the same |
US13/396,899 US8735942B2 (en) | 2008-12-26 | 2012-02-15 | Compound semiconductor device and manufacturing method of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008334793A JP5564791B2 (ja) | 2008-12-26 | 2008-12-26 | 化合物半導体装置及びその製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013222490A Division JP5742912B2 (ja) | 2013-10-25 | 2013-10-25 | 化合物半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010157602A true JP2010157602A (ja) | 2010-07-15 |
JP5564791B2 JP5564791B2 (ja) | 2014-08-06 |
Family
ID=41800685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008334793A Active JP5564791B2 (ja) | 2008-12-26 | 2008-12-26 | 化合物半導体装置及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8198653B2 (ja) |
EP (2) | EP2701200B1 (ja) |
JP (1) | JP5564791B2 (ja) |
CN (2) | CN102723362B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011114269A (ja) * | 2009-11-30 | 2011-06-09 | Sumitomo Electric Ind Ltd | 半導体装置 |
WO2013018301A1 (ja) * | 2011-07-29 | 2013-02-07 | パナソニック株式会社 | 半導体装置 |
JP2014078710A (ja) * | 2012-10-11 | 2014-05-01 | Samsung Electronics Co Ltd | 高電子移動度トランジスタ及びその駆動方法 |
JP5506919B2 (ja) * | 2010-04-22 | 2014-05-28 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2040299A1 (en) * | 2007-09-12 | 2009-03-25 | Forschungsverbund Berlin e.V. | Electrical devices having improved transfer characteristics and method for tailoring the transfer characteristics of such an electrical device |
JP5845568B2 (ja) * | 2010-11-02 | 2016-01-20 | 富士通株式会社 | 半導体装置及びその製造方法 |
KR102065115B1 (ko) * | 2010-11-05 | 2020-01-13 | 삼성전자주식회사 | E-모드를 갖는 고 전자 이동도 트랜지스터 및 그 제조방법 |
JP5741042B2 (ja) * | 2011-02-14 | 2015-07-01 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP5343100B2 (ja) * | 2011-03-17 | 2013-11-13 | 株式会社東芝 | 窒化物半導体装置 |
JP5692357B2 (ja) * | 2011-03-18 | 2015-04-01 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
WO2013011617A1 (ja) * | 2011-07-15 | 2013-01-24 | パナソニック株式会社 | 半導体装置及びその製造方法 |
JP5782947B2 (ja) * | 2011-09-15 | 2015-09-24 | 富士通株式会社 | 半導体装置及びその製造方法、電源装置、高周波増幅器 |
JP2013157407A (ja) * | 2012-01-27 | 2013-08-15 | Fujitsu Semiconductor Ltd | 化合物半導体装置及びその製造方法 |
US8969881B2 (en) | 2012-02-17 | 2015-03-03 | International Rectifier Corporation | Power transistor having segmented gate |
JP6054620B2 (ja) * | 2012-03-29 | 2016-12-27 | トランスフォーム・ジャパン株式会社 | 化合物半導体装置及びその製造方法 |
JP5895666B2 (ja) * | 2012-03-30 | 2016-03-30 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
KR101927408B1 (ko) * | 2012-07-20 | 2019-03-07 | 삼성전자주식회사 | 고전자 이동도 트랜지스터 및 그 제조방법 |
US20160013276A1 (en) * | 2013-04-12 | 2016-01-14 | Sharp Kabushiki Kaisha | Nitride semiconductor device |
KR102100928B1 (ko) * | 2013-10-17 | 2020-05-15 | 삼성전자주식회사 | 고전자 이동도 트랜지스터 |
TWI548087B (zh) | 2014-06-06 | 2016-09-01 | 台達電子工業股份有限公司 | 半導體裝置與其之製造方法 |
US9530846B2 (en) * | 2015-03-31 | 2016-12-27 | Coorstek Kk | Nitride semiconductor substrate |
US10217819B2 (en) * | 2015-05-20 | 2019-02-26 | Samsung Electronics Co., Ltd. | Semiconductor device including metal-2 dimensional material-semiconductor contact |
JP6304155B2 (ja) * | 2015-07-14 | 2018-04-04 | 株式会社デンソー | 窒化物半導体装置 |
DE102016205079B4 (de) * | 2016-03-29 | 2021-07-01 | Robert Bosch Gmbh | High-electron-mobility Transistor |
US20200343354A1 (en) * | 2017-07-04 | 2020-10-29 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing semiconductor device |
US10784341B2 (en) | 2019-01-21 | 2020-09-22 | Northrop Grumnian Systems Corporation | Castellated superjunction transistors |
US10804387B1 (en) * | 2019-03-21 | 2020-10-13 | Northrop Grumman Systems Corporation | Vertical superlattice transistors |
US11342440B2 (en) | 2019-07-22 | 2022-05-24 | Northrop Grumman Systems Corporation | Passivated transistors |
US11791388B2 (en) * | 2020-02-27 | 2023-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source leakage current suppression by source surrounding gate structure |
US11855198B2 (en) * | 2020-04-09 | 2023-12-26 | Qualcomm Incorporated | Multi-gate high electron mobility transistors (HEMTs) employing tuned recess depth gates for improved device linearity |
CN111952356A (zh) * | 2020-07-13 | 2020-11-17 | 中国电子产品可靠性与环境试验研究所((工业和信息化部电子第五研究所)(中国赛宝实验室)) | Hemt器件结构及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06104291A (ja) * | 1992-09-18 | 1994-04-15 | Fujitsu Ltd | 電界効果型半導体装置 |
JP2006286740A (ja) * | 2005-03-31 | 2006-10-19 | Eudyna Devices Inc | 半導体装置及びその製造方法 |
JP2007150282A (ja) * | 2005-11-02 | 2007-06-14 | Sharp Corp | 電界効果トランジスタ |
WO2008096521A1 (ja) * | 2007-02-07 | 2008-08-14 | Nec Corporation | 半導体装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5130641B2 (ja) * | 2006-03-31 | 2013-01-30 | サンケン電気株式会社 | 複合半導体装置 |
JP4077731B2 (ja) * | 2003-01-27 | 2008-04-23 | 富士通株式会社 | 化合物半導体装置およびその製造方法 |
US7465997B2 (en) * | 2004-02-12 | 2008-12-16 | International Rectifier Corporation | III-nitride bidirectional switch |
JP2005286135A (ja) * | 2004-03-30 | 2005-10-13 | Eudyna Devices Inc | 半導体装置および半導体装置の製造方法 |
US7084441B2 (en) * | 2004-05-20 | 2006-08-01 | Cree, Inc. | Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same |
WO2006001369A1 (ja) | 2004-06-24 | 2006-01-05 | Nec Corporation | 半導体装置 |
JP4974454B2 (ja) | 2004-11-15 | 2012-07-11 | 株式会社豊田中央研究所 | 半導体装置 |
JP4832768B2 (ja) * | 2005-02-09 | 2011-12-07 | 日本電信電話株式会社 | 半導体装置 |
JP5179023B2 (ja) * | 2006-05-31 | 2013-04-10 | パナソニック株式会社 | 電界効果トランジスタ |
US8283699B2 (en) * | 2006-11-13 | 2012-10-09 | Cree, Inc. | GaN based HEMTs with buried field plates |
USRE45989E1 (en) * | 2006-11-20 | 2016-04-26 | Panasonic Corporation | Semiconductor device and method for driving the same |
JP5268929B2 (ja) * | 2006-11-21 | 2013-08-21 | アイメック | AlGaN/GaNHEMTの表面処理およびパッシベーション |
JP2008147593A (ja) * | 2006-12-13 | 2008-06-26 | Toyota Central R&D Labs Inc | Mis構造を内蔵するhemt |
US7838904B2 (en) * | 2007-01-31 | 2010-11-23 | Panasonic Corporation | Nitride based semiconductor device with concave gate region |
JP4478175B2 (ja) * | 2007-06-26 | 2010-06-09 | 株式会社東芝 | 半導体装置 |
CN101897029B (zh) * | 2007-12-10 | 2015-08-12 | 特兰斯夫公司 | 绝缘栅e模式晶体管 |
US7898004B2 (en) * | 2008-12-10 | 2011-03-01 | Transphorm Inc. | Semiconductor heterostructure diodes |
-
2008
- 2008-12-26 JP JP2008334793A patent/JP5564791B2/ja active Active
-
2009
- 2009-09-29 EP EP13189916.3A patent/EP2701200B1/en active Active
- 2009-09-29 EP EP09171693.6A patent/EP2202801B1/en active Active
- 2009-10-21 CN CN201210211258.7A patent/CN102723362B/zh active Active
- 2009-10-21 CN CN200910205387A patent/CN101771075A/zh active Pending
- 2009-11-13 US US12/618,384 patent/US8198653B2/en active Active
-
2012
- 2012-02-15 US US13/396,899 patent/US8735942B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06104291A (ja) * | 1992-09-18 | 1994-04-15 | Fujitsu Ltd | 電界効果型半導体装置 |
JP2006286740A (ja) * | 2005-03-31 | 2006-10-19 | Eudyna Devices Inc | 半導体装置及びその製造方法 |
JP2007150282A (ja) * | 2005-11-02 | 2007-06-14 | Sharp Corp | 電界効果トランジスタ |
WO2008096521A1 (ja) * | 2007-02-07 | 2008-08-14 | Nec Corporation | 半導体装置 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011114269A (ja) * | 2009-11-30 | 2011-06-09 | Sumitomo Electric Ind Ltd | 半導体装置 |
JP5506919B2 (ja) * | 2010-04-22 | 2014-05-28 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
WO2013018301A1 (ja) * | 2011-07-29 | 2013-02-07 | パナソニック株式会社 | 半導体装置 |
US9761670B2 (en) | 2011-07-29 | 2017-09-12 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device composed of AlGaInN layers with inactive regions |
JP2014078710A (ja) * | 2012-10-11 | 2014-05-01 | Samsung Electronics Co Ltd | 高電子移動度トランジスタ及びその駆動方法 |
Also Published As
Publication number | Publication date |
---|---|
CN102723362B (zh) | 2016-02-24 |
EP2701200A2 (en) | 2014-02-26 |
CN102723362A (zh) | 2012-10-10 |
EP2701200B1 (en) | 2017-09-13 |
US20100163928A1 (en) | 2010-07-01 |
US8735942B2 (en) | 2014-05-27 |
EP2202801A2 (en) | 2010-06-30 |
EP2202801B1 (en) | 2018-07-18 |
EP2202801A3 (en) | 2012-03-07 |
US20120139008A1 (en) | 2012-06-07 |
EP2701200A3 (en) | 2014-08-13 |
US8198653B2 (en) | 2012-06-12 |
JP5564791B2 (ja) | 2014-08-06 |
CN101771075A (zh) | 2010-07-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5564791B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP4916671B2 (ja) | 半導体装置 | |
JP5533661B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP5609055B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP5353735B2 (ja) | 半導体装置およびその製造方法 | |
JP2010050347A (ja) | 半導体装置及びその製造方法 | |
JPWO2007122790A1 (ja) | 電界効果トランジスタ | |
JP2011138916A (ja) | 半導体装置およびその製造方法 | |
CN110783191B (zh) | 制造半导体器件的方法 | |
US11233145B2 (en) | Manufacturing method of semiconductor structure | |
US20160284843A1 (en) | Semiconductor device and method for manufacturing semiconductor device | |
US9070708B2 (en) | Semiconductor device and manufacturing method thereof | |
US10734510B2 (en) | Semiconductor device | |
JP5504660B2 (ja) | 化合物半導体装置及びその製造方法 | |
CN110875383B (zh) | 半导体装置及其制造方法 | |
JP4761718B2 (ja) | 半導体装置およびその製造方法 | |
JP6524888B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP2014175339A (ja) | 半導体素子および電子機器 | |
JP5742912B2 (ja) | 化合物半導体装置及びその製造方法 | |
TWI740058B (zh) | 半導體裝置及其製造方法 | |
CN112837999A (zh) | 制造半导体器件的方法和半导体器件 | |
JP5614411B2 (ja) | 化合物半導体装置及びその製造方法 | |
US20230369437A1 (en) | Semiconductor device and method of manufacturing semiconductor device | |
JP5458084B2 (ja) | 半導体装置の製造方法 | |
JP2021044357A (ja) | 高電子移動度トランジスタの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110907 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130827 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130830 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131025 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140128 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140331 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140520 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140602 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5564791 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |