JP2010129981A - エピタキシャルウェーハ製造方法 - Google Patents
エピタキシャルウェーハ製造方法 Download PDFInfo
- Publication number
- JP2010129981A JP2010129981A JP2008306678A JP2008306678A JP2010129981A JP 2010129981 A JP2010129981 A JP 2010129981A JP 2008306678 A JP2008306678 A JP 2008306678A JP 2008306678 A JP2008306678 A JP 2008306678A JP 2010129981 A JP2010129981 A JP 2010129981A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial wafer
- hydrogen chloride
- wafer
- phase growth
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 54
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 38
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 37
- 239000012808 vapor phase Substances 0.000 claims abstract description 3
- 238000006243 chemical reaction Methods 0.000 claims description 45
- 238000001947 vapour-phase growth Methods 0.000 claims description 43
- 239000007789 gas Substances 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000010453 quartz Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 239000006227 byproduct Substances 0.000 abstract description 32
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 abstract description 4
- 239000005052 trichlorosilane Substances 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 abstract 4
- 235000012431 wafers Nutrition 0.000 description 78
- 230000000052 comparative effect Effects 0.000 description 11
- 238000001312 dry etching Methods 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 235000012771 pancakes Nutrition 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008306678A JP2010129981A (ja) | 2008-12-01 | 2008-12-01 | エピタキシャルウェーハ製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008306678A JP2010129981A (ja) | 2008-12-01 | 2008-12-01 | エピタキシャルウェーハ製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010129981A true JP2010129981A (ja) | 2010-06-10 |
| JP2010129981A5 JP2010129981A5 (enExample) | 2012-01-19 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008306678A Withdrawn JP2010129981A (ja) | 2008-12-01 | 2008-12-01 | エピタキシャルウェーハ製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010129981A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261497A (zh) * | 2018-11-30 | 2020-06-09 | 胜高股份有限公司 | 外延晶片的制造方法及装置 |
| CN115896936A (zh) * | 2022-12-22 | 2023-04-04 | 西安奕斯伟材料科技有限公司 | 气体供应的处理方法、气体供应装置和外延生长设备 |
-
2008
- 2008-12-01 JP JP2008306678A patent/JP2010129981A/ja not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261497A (zh) * | 2018-11-30 | 2020-06-09 | 胜高股份有限公司 | 外延晶片的制造方法及装置 |
| CN115896936A (zh) * | 2022-12-22 | 2023-04-04 | 西安奕斯伟材料科技有限公司 | 气体供应的处理方法、气体供应装置和外延生长设备 |
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