JP2010114106A - 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ - Google Patents

機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ Download PDF

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Publication number
JP2010114106A
JP2010114106A JP2008282681A JP2008282681A JP2010114106A JP 2010114106 A JP2010114106 A JP 2010114106A JP 2008282681 A JP2008282681 A JP 2008282681A JP 2008282681 A JP2008282681 A JP 2008282681A JP 2010114106 A JP2010114106 A JP 2010114106A
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Japan
Prior art keywords
substrate
layer
region
functional region
functional
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Pending
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JP2008282681A
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English (en)
Japanese (ja)
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JP2010114106A5 (enExample
Inventor
Takao Yonehara
隆夫 米原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2008282681A priority Critical patent/JP2010114106A/ja
Priority to EP09013629A priority patent/EP2182554A2/en
Priority to KR1020090104803A priority patent/KR101168881B1/ko
Priority to US12/611,761 priority patent/US7943488B2/en
Priority to CN2009102115367A priority patent/CN101740494B/zh
Publication of JP2010114106A publication Critical patent/JP2010114106A/ja
Publication of JP2010114106A5 publication Critical patent/JP2010114106A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
    • B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
    • B41J2/45—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2008282681A 2008-11-04 2008-11-04 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ Pending JP2010114106A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008282681A JP2010114106A (ja) 2008-11-04 2008-11-04 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ
EP09013629A EP2182554A2 (en) 2008-11-04 2009-10-29 Transfer method of functional region, led array, led printer head, and led printer
KR1020090104803A KR101168881B1 (ko) 2008-11-04 2009-11-02 기능성 영역의 이설방법, ｌｅｄ 어레이, ｌｅｄ 프린터 헤드, 및 ｌｅｄ 프린터
US12/611,761 US7943488B2 (en) 2008-11-04 2009-11-03 Transfer method of functional region, LED array, LED printer head, and LED printer
CN2009102115367A CN101740494B (zh) 2008-11-04 2009-11-04 功能区域的转移方法及led阵列、打印机头和打印机

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008282681A JP2010114106A (ja) 2008-11-04 2008-11-04 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ

Publications (2)

Publication Number Publication Date
JP2010114106A true JP2010114106A (ja) 2010-05-20
JP2010114106A5 JP2010114106A5 (enExample) 2011-12-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008282681A Pending JP2010114106A (ja) 2008-11-04 2008-11-04 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ

Country Status (5)

Country Link
US (1) US7943488B2 (enExample)
EP (1) EP2182554A2 (enExample)
JP (1) JP2010114106A (enExample)
KR (1) KR101168881B1 (enExample)
CN (1) CN101740494B (enExample)

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JP2012043946A (ja) * 2010-08-18 2012-03-01 Toyohashi Univ Of Technology 光電子半導体装置及びその製造方法
JP2017085137A (ja) * 2012-11-12 2017-05-18 晶元光▲電▼股▲ふん▼有限公司 半導体発光素子及びその製造方法
JP2019071323A (ja) * 2017-10-06 2019-05-09 鼎元光電科技股▲ふん▼有限公司 基板がない発光ダイオード及びその製造方法

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JP5590837B2 (ja) * 2009-09-15 2014-09-17 キヤノン株式会社 機能性領域の移設方法
CN102956757A (zh) * 2011-08-19 2013-03-06 展晶科技(深圳)有限公司 发光二极管封装结构的制造方法
US20130056749A1 (en) * 2011-09-07 2013-03-07 Michael Tischler Broad-area lighting systems
CN102496667B (zh) * 2011-12-20 2014-05-07 中国科学院半导体研究所 GaN基薄膜芯片的制造方法
US8896010B2 (en) 2012-01-24 2014-11-25 Cooledge Lighting Inc. Wafer-level flip chip device packages and related methods
US8907362B2 (en) 2012-01-24 2014-12-09 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
WO2013112435A1 (en) 2012-01-24 2013-08-01 Cooledge Lighting Inc. Light - emitting devices having discrete phosphor chips and fabrication methods
CN109802014B (zh) * 2013-07-05 2022-05-31 晶元光电股份有限公司 发光元件及其制造方法
US9343443B2 (en) 2014-02-05 2016-05-17 Cooledge Lighting, Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
CN107112403A (zh) * 2014-10-22 2017-08-29 安相贞 半导体元件用支承基板、包括该基板的半导体装置及其制造方法
CN108962789A (zh) * 2018-06-25 2018-12-07 开发晶照明（厦门）有限公司 微器件转移方法和微器件转移设备
US11217471B2 (en) * 2019-03-06 2022-01-04 Rohinni, LLC Multi-axis movement for transfer of semiconductor devices
CN110337237A (zh) * 2019-04-23 2019-10-15 深圳市丰泰工业科技有限公司 用紫外激光器让uv胶失去粘性的方法
JP7457255B2 (ja) * 2019-05-08 2024-03-28 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
JP2024081307A (ja) * 2022-12-06 2024-06-18 キヤノン株式会社 積層基板、液体吐出ヘッドおよび積層基板の製造方法
CN116387226A (zh) * 2023-03-29 2023-07-04 香港科技大学(广州) 转移基板及其制备方法、显示装置及发光元件的转移方法

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JP2005108943A (ja) * 2003-09-29 2005-04-21 Oki Data Corp 半導体ウェハ及びこれを用いた半導体装置の製造方法
JP2005150703A (ja) * 2003-10-22 2005-06-09 Oki Data Corp 半導体装置、及び、それを用いたｌｅｄプリントヘッド、画像形成装置、半導体装置の製造方法
JP2008135419A (ja) * 2006-10-27 2008-06-12 Canon Inc 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ

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US6372608B1 (en) * 1996-08-27 2002-04-16 Seiko Epson Corporation Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method
JP3116085B2 (ja) * 1997-09-16 2000-12-11 東京農工大学長 半導体素子形成法
JP2003174041A (ja) 2001-12-06 2003-06-20 Seiko Epson Corp 素子の実装方法、電子機器、フラットパネルディスプレイ、システムインパッケージ型ｉｃおよびオプティカルエレクトリカルｉｃ
US8049947B2 (en) * 2002-06-10 2011-11-01 E Ink Corporation Components and methods for use in electro-optic displays
TWI328837B (en) * 2003-02-28 2010-08-11 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP4370796B2 (ja) 2003-04-08 2009-11-25 セイコーエプソン株式会社 半導体装置、半導体装置の製造方法及び電子機器
JP4315742B2 (ja) 2003-06-20 2009-08-19 株式会社沖データ 半導体薄膜の製造方法及び半導体装置の製造方法
US6913985B2 (en) 2003-06-20 2005-07-05 Oki Data Corporation Method of manufacturing a semiconductor device
JP4554180B2 (ja) * 2003-09-17 2010-09-29 ソニー株式会社 薄膜半導体デバイスの製造方法
US7282380B2 (en) * 2004-03-25 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4468107B2 (ja) 2004-08-09 2010-05-26 シャープ株式会社 半導体装置の製造方法、半導体装置及び半導体回路基板
US7523701B2 (en) * 2005-03-07 2009-04-28 Asml Netherlands B.V. Imprint lithography method and apparatus

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JP2005108943A (ja) * 2003-09-29 2005-04-21 Oki Data Corp 半導体ウェハ及びこれを用いた半導体装置の製造方法
JP2005150703A (ja) * 2003-10-22 2005-06-09 Oki Data Corp 半導体装置、及び、それを用いたｌｅｄプリントヘッド、画像形成装置、半導体装置の製造方法
JP2008135419A (ja) * 2006-10-27 2008-06-12 Canon Inc 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012043946A (ja) * 2010-08-18 2012-03-01 Toyohashi Univ Of Technology 光電子半導体装置及びその製造方法
JP2017085137A (ja) * 2012-11-12 2017-05-18 晶元光▲電▼股▲ふん▼有限公司 半導体発光素子及びその製造方法
US10283669B2 (en) 2012-11-12 2019-05-07 Epistar Corporation Semiconductor light emitting device and method of fabricating the same
US10651335B2 (en) 2012-11-12 2020-05-12 Epistar Corporation Semiconductor light emitting device and method of fabricating the same
JP2021100120A (ja) * 2012-11-12 2021-07-01 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 半導体発光素子の製造方法
US11251328B2 (en) 2012-11-12 2022-02-15 Epistar Corporation Semiconductor light emitting device and method of fabricating the same
US11791436B2 (en) 2012-11-12 2023-10-17 Epistar Corporation Semiconductor light emitting device and method of fabricating the same
JP7384848B2 (ja) 2012-11-12 2023-11-21 晶元光電股▲ふん▼有限公司 半導体発光素子の製造方法
US12471412B2 (en) 2012-11-12 2025-11-11 Epistar Corporation Semiconductor light emitting device and method of fabricating the same
JP2019071323A (ja) * 2017-10-06 2019-05-09 鼎元光電科技股▲ふん▼有限公司 基板がない発光ダイオード及びその製造方法

Also Published As

Publication number Publication date
KR20100050410A (ko) 2010-05-13
US7943488B2 (en) 2011-05-17
CN101740494A (zh) 2010-06-16
EP2182554A2 (en) 2010-05-05
US20100109023A1 (en) 2010-05-06
CN101740494B (zh) 2012-08-01
KR101168881B1 (ko) 2012-07-30

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