CN101740494B - 功能区域的转移方法及led阵列、打印机头和打印机 - Google Patents

功能区域的转移方法及led阵列、打印机头和打印机 Download PDF

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Publication number
CN101740494B
CN101740494B CN2009102115367A CN200910211536A CN101740494B CN 101740494 B CN101740494 B CN 101740494B CN 2009102115367 A CN2009102115367 A CN 2009102115367A CN 200910211536 A CN200910211536 A CN 200910211536A CN 101740494 B CN101740494 B CN 101740494B
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substrate
functional area
layer
transfer method
zone
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CN101740494A (zh
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米原隆夫
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
    • B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
    • B41J2/45—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN2009102115367A 2008-11-04 2009-11-04 功能区域的转移方法及led阵列、打印机头和打印机 Expired - Fee Related CN101740494B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008-282681 2008-11-04
JP2008282681A JP2010114106A (ja) 2008-11-04 2008-11-04 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ

Publications (2)

Publication Number Publication Date
CN101740494A CN101740494A (zh) 2010-06-16
CN101740494B true CN101740494B (zh) 2012-08-01

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CN2009102115367A Expired - Fee Related CN101740494B (zh) 2008-11-04 2009-11-04 功能区域的转移方法及led阵列、打印机头和打印机

Country Status (5)

Country Link
US (1) US7943488B2 (enExample)
EP (1) EP2182554A2 (enExample)
JP (1) JP2010114106A (enExample)
KR (1) KR101168881B1 (enExample)
CN (1) CN101740494B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9614127B2 (en) 2013-07-05 2017-04-04 Epistar Corporation Light-emitting device and method of manufacturing thereof

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JP5590837B2 (ja) * 2009-09-15 2014-09-17 キヤノン株式会社 機能性領域の移設方法
JP2012043946A (ja) * 2010-08-18 2012-03-01 Toyohashi Univ Of Technology 光電子半導体装置及びその製造方法
CN102956757A (zh) * 2011-08-19 2013-03-06 展晶科技(深圳)有限公司 发光二极管封装结构的制造方法
US20130056749A1 (en) * 2011-09-07 2013-03-07 Michael Tischler Broad-area lighting systems
CN102496667B (zh) * 2011-12-20 2014-05-07 中国科学院半导体研究所 GaN基薄膜芯片的制造方法
US8896010B2 (en) 2012-01-24 2014-11-25 Cooledge Lighting Inc. Wafer-level flip chip device packages and related methods
US8907362B2 (en) 2012-01-24 2014-12-09 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
WO2013112435A1 (en) 2012-01-24 2013-08-01 Cooledge Lighting Inc. Light - emitting devices having discrete phosphor chips and fabrication methods
CN103811593B (zh) 2012-11-12 2018-06-19 晶元光电股份有限公司 半导体光电元件的制作方法
US9343443B2 (en) 2014-02-05 2016-05-17 Cooledge Lighting, Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
CN107112403A (zh) * 2014-10-22 2017-08-29 安相贞 半导体元件用支承基板、包括该基板的半导体装置及其制造方法
JP2019071323A (ja) * 2017-10-06 2019-05-09 鼎元光電科技股▲ふん▼有限公司 基板がない発光ダイオード及びその製造方法
CN108962789A (zh) * 2018-06-25 2018-12-07 开发晶照明（厦门）有限公司 微器件转移方法和微器件转移设备
US11217471B2 (en) * 2019-03-06 2022-01-04 Rohinni, LLC Multi-axis movement for transfer of semiconductor devices
CN110337237A (zh) * 2019-04-23 2019-10-15 深圳市丰泰工业科技有限公司 用紫外激光器让uv胶失去粘性的方法
JP7457255B2 (ja) * 2019-05-08 2024-03-28 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
JP2024081307A (ja) * 2022-12-06 2024-06-18 キヤノン株式会社 積層基板、液体吐出ヘッドおよび積層基板の製造方法
CN116387226A (zh) * 2023-03-29 2023-07-04 香港科技大学(广州) 转移基板及其制备方法、显示装置及发光元件的转移方法

Citations (2)

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CN1199507A (zh) * 1996-08-27 1998-11-18 精工爱普生株式会社 剥离方法、薄膜器件的转移方法以及使用该方法制造的薄膜器件、薄膜集成电路装置和液晶显示装置
JP2006253677A (ja) * 2005-03-07 2006-09-21 Asml Netherlands Bv インプリント・リソグラフィ

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JP3116085B2 (ja) * 1997-09-16 2000-12-11 東京農工大学長 半導体素子形成法
JP2003174041A (ja) 2001-12-06 2003-06-20 Seiko Epson Corp 素子の実装方法、電子機器、フラットパネルディスプレイ、システムインパッケージ型ｉｃおよびオプティカルエレクトリカルｉｃ
US8049947B2 (en) * 2002-06-10 2011-11-01 E Ink Corporation Components and methods for use in electro-optic displays
TWI328837B (en) * 2003-02-28 2010-08-11 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP4370796B2 (ja) 2003-04-08 2009-11-25 セイコーエプソン株式会社 半導体装置、半導体装置の製造方法及び電子機器
JP4315742B2 (ja) 2003-06-20 2009-08-19 株式会社沖データ 半導体薄膜の製造方法及び半導体装置の製造方法
US6913985B2 (en) 2003-06-20 2005-07-05 Oki Data Corporation Method of manufacturing a semiconductor device
JP4554180B2 (ja) * 2003-09-17 2010-09-29 ソニー株式会社 薄膜半導体デバイスの製造方法
JP2005108943A (ja) * 2003-09-29 2005-04-21 Oki Data Corp 半導体ウェハ及びこれを用いた半導体装置の製造方法
JP4672329B2 (ja) * 2003-10-22 2011-04-20 株式会社沖データ 半導体装置、及び、それを用いたｌｅｄプリントヘッド、画像形成装置、半導体装置の製造方法
US7282380B2 (en) * 2004-03-25 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4468107B2 (ja) 2004-08-09 2010-05-26 シャープ株式会社 半導体装置の製造方法、半導体装置及び半導体回路基板
JP5171016B2 (ja) * 2006-10-27 2013-03-27 キヤノン株式会社 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1199507A (zh) * 1996-08-27 1998-11-18 精工爱普生株式会社 剥离方法、薄膜器件的转移方法以及使用该方法制造的薄膜器件、薄膜集成电路装置和液晶显示装置
JP2006253677A (ja) * 2005-03-07 2006-09-21 Asml Netherlands Bv インプリント・リソグラフィ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9614127B2 (en) 2013-07-05 2017-04-04 Epistar Corporation Light-emitting device and method of manufacturing thereof
US9793458B2 (en) 2013-07-05 2017-10-17 Epistar Corporation Light-emitting device and method of manufacturing thereof
US10038128B2 (en) 2013-07-05 2018-07-31 Epistar Corporation Light-emitting device and method of manufacturing thereof

Also Published As

Publication number Publication date
KR20100050410A (ko) 2010-05-13
JP2010114106A (ja) 2010-05-20
US7943488B2 (en) 2011-05-17
CN101740494A (zh) 2010-06-16
EP2182554A2 (en) 2010-05-05
US20100109023A1 (en) 2010-05-06
KR101168881B1 (ko) 2012-07-30

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