JP2010109330A - 露光装置、及びデバイスの製造方法 - Google Patents
露光装置、及びデバイスの製造方法 Download PDFInfo
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- JP2010109330A JP2010109330A JP2009195393A JP2009195393A JP2010109330A JP 2010109330 A JP2010109330 A JP 2010109330A JP 2009195393 A JP2009195393 A JP 2009195393A JP 2009195393 A JP2009195393 A JP 2009195393A JP 2010109330 A JP2010109330 A JP 2010109330A
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- exposure apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【解決手段】原版のパターンを、投影光学系106を介して基板上に露光する露光装置1において、投影光学系106を保持する基準定盤103と、該基準定盤103を弾性支持する弾性支持手段102と、設置床100から弾性支持手段102を保持するベース構造体101と、該ベース構造体101と基準定盤103との相対位置を検出する検出手段112と、ベース構造体101の床設置部に設置され、検出手段112の検出結果に基づいて、ベース構造体101の姿勢を調整する調整手段113とを備える。
【選択図】図1
Description
101 ベースフレーム(ベース構造体)
102 アクティブマウント(弾性支持手段)
103 鏡筒定盤(基準定盤)
106 投影光学系
112 隙間センサ(検出手段)
113 隙高さ調整機構(調整手段)
202 マウント変位センサ(計測手段)
Claims (10)
- 原版のパターンを、投影光学系を介して基板上に露光する露光装置において、
前記投影光学系を保持する基準定盤と、
前記基準定盤を弾性支持する弾性支持手段と、
設置床から前記弾性支持手段を保持するベース構造体と、
前記ベース構造体と前記基準定盤との相対位置を検出する検出手段と、
前記ベース構造体の床設置部に設置され、前記検出手段の検出結果に基づいて前記ベース構造体の姿勢を調整する調整手段と、
を備えることを特徴とする露光装置。 - 前記調整手段は、前記検出手段の計測結果に基づいて、前記ベース構造体の姿勢を制御することを特徴とする請求項1記載の露光装置。
- 前記ベース構造体は、前記弾性支持手段を制御するための基準値となる前記基準定盤との変位量を計測する計測手段を有し、
前記調整手段は、前記検出手段及び前記計測手段の計測結果に基づいて、前記ベース構造体の姿勢を制御することを特徴とする請求項1記載の露光装置。 - 前記検出手段が検出する前記ベース構造体と前記基準定盤との相対位置に予め閾値を設定し、
前記調整手段は、前記相対位置が前記閾値を超えた場合に制御を開始することを特徴とする請求項1〜3記載の露光装置。 - 前記ベース構造体と前記基準定盤との相対位置が、前記閾値を超えた場合に警告を発する警告手段を備えることを特徴とする請求項4記載の露光装置。
- 前記検出手段は、静電容量式非接触微小変位計であることを特徴とする請求項1〜5記載の露光装置。
- 前記検出手段は、前記ベース構造体の脚部の鉛直線上に設置することを特徴とする請求項1〜6記載の露光装置。
- 前記調整手段は、自動で上下動作可能な駆動装置であることを特徴とする請求項1〜7記載の露光装置。
- 前記調整手段は、4箇所に設置し、前記弾性支持手段は、3箇所に設置することを特徴とする請求項1〜8記載の露光装置。
- 請求項1〜9に記載の露光装置を用いて基板を露光する工程と、
前記基板を現像する工程と、
を有することを特徴とするデバイスの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009195393A JP5350139B2 (ja) | 2008-10-01 | 2009-08-26 | 露光装置、及びデバイスの製造方法 |
US12/571,003 US20100079736A1 (en) | 2008-10-01 | 2009-09-30 | Exposure apparatus and device manufacturing method |
Applications Claiming Priority (3)
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JP2008256742 | 2008-10-01 | ||
JP2008256742 | 2008-10-01 | ||
JP2009195393A JP5350139B2 (ja) | 2008-10-01 | 2009-08-26 | 露光装置、及びデバイスの製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010109330A true JP2010109330A (ja) | 2010-05-13 |
JP2010109330A5 JP2010109330A5 (ja) | 2012-10-11 |
JP5350139B2 JP5350139B2 (ja) | 2013-11-27 |
Family
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JP2009195393A Expired - Fee Related JP5350139B2 (ja) | 2008-10-01 | 2009-08-26 | 露光装置、及びデバイスの製造方法 |
Country Status (2)
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US (1) | US20100079736A1 (ja) |
JP (1) | JP5350139B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013084933A (ja) * | 2011-09-27 | 2013-05-09 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
JP2017508184A (ja) * | 2014-02-28 | 2017-03-23 | シャンハイ マイクロ エレクトロニクス イクイプメント カンパニー リミティド | リソグラフィマシンワークピーステーブル、及びその垂直位置初期化方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL2007155A (en) * | 2010-08-25 | 2012-02-28 | Asml Netherlands Bv | Stage apparatus, lithographic apparatus and method of positioning an object table. |
DE102017204685B4 (de) | 2017-03-21 | 2021-11-11 | Carl Zeiss Smt Gmbh | Verfahren zur Lokalisierung von Montagefehlern sowie Projektionsbelichtungsanlage |
CN108038314A (zh) * | 2017-12-15 | 2018-05-15 | 佛山市米良仓科技有限公司 | 一种工程变形监测信息处理系统 |
Citations (4)
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JPH09275061A (ja) * | 1996-04-02 | 1997-10-21 | Canon Inc | 空圧式振動絶縁・除去装置、投影露光装置及びこれを用いたデバイス製造方法 |
JP2002359177A (ja) * | 2001-05-31 | 2002-12-13 | Canon Inc | 露光装置 |
JP2004335510A (ja) * | 2003-04-30 | 2004-11-25 | Nikon Corp | ステージ装置及び露光装置 |
JP2005058254A (ja) * | 2003-08-11 | 2005-03-10 | Ace Denken:Kk | 遊技機 |
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US4473292A (en) * | 1982-02-09 | 1984-09-25 | Censor Patent-Und Versuchsanstalt | Dampening system |
US4803712A (en) * | 1987-01-20 | 1989-02-07 | Hitachi, Ltd. | X-ray exposure system |
DE4133037C2 (de) * | 1990-10-05 | 1999-07-22 | Canon Kk | Belichtungsvorrichtung |
JP3277581B2 (ja) * | 1993-02-01 | 2002-04-22 | 株式会社ニコン | ステージ装置および露光装置 |
JP3226704B2 (ja) * | 1994-03-15 | 2001-11-05 | キヤノン株式会社 | 露光装置 |
US6392741B1 (en) * | 1995-09-05 | 2002-05-21 | Nikon Corporation | Projection exposure apparatus having active vibration isolator and method of controlling vibration by the active vibration isolator |
US5812420A (en) * | 1995-09-05 | 1998-09-22 | Nikon Corporation | Vibration-preventive apparatus and exposure apparatus |
US5917580A (en) * | 1996-08-29 | 1999-06-29 | Canon Kabushiki Kaisha | Scan exposure method and apparatus |
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JP3554186B2 (ja) * | 1998-04-08 | 2004-08-18 | キヤノン株式会社 | 露光装置、デバイス製造方法および反力受け方法 |
AU4057999A (en) * | 1998-06-02 | 1999-12-20 | Nikon Corporation | Scanning aligner, method of manufacture thereof, and method of manufacturing device |
WO1999066542A1 (fr) * | 1998-06-17 | 1999-12-23 | Nikon Corporation | Procede et dispositif d'exposition |
AU1554901A (en) * | 1999-12-16 | 2001-06-25 | Nikon Corporation | Exposure method and exposure apparatus |
US6621556B2 (en) * | 2000-02-28 | 2003-09-16 | Nikon Corporation | Projection exposure apparatus and manufacturing and adjusting methods thereof |
US6538720B2 (en) * | 2001-02-28 | 2003-03-25 | Silicon Valley Group, Inc. | Lithographic tool with dual isolation system and method for configuring the same |
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JP4458322B2 (ja) * | 2003-01-14 | 2010-04-28 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
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JP2006344685A (ja) * | 2005-06-07 | 2006-12-21 | Canon Inc | 露光装置 |
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2009
- 2009-08-26 JP JP2009195393A patent/JP5350139B2/ja not_active Expired - Fee Related
- 2009-09-30 US US12/571,003 patent/US20100079736A1/en not_active Abandoned
Patent Citations (4)
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JPH09275061A (ja) * | 1996-04-02 | 1997-10-21 | Canon Inc | 空圧式振動絶縁・除去装置、投影露光装置及びこれを用いたデバイス製造方法 |
JP2002359177A (ja) * | 2001-05-31 | 2002-12-13 | Canon Inc | 露光装置 |
JP2004335510A (ja) * | 2003-04-30 | 2004-11-25 | Nikon Corp | ステージ装置及び露光装置 |
JP2005058254A (ja) * | 2003-08-11 | 2005-03-10 | Ace Denken:Kk | 遊技機 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013084933A (ja) * | 2011-09-27 | 2013-05-09 | Asml Netherlands Bv | リソグラフィ装置及びデバイス製造方法 |
US9207547B2 (en) | 2011-09-27 | 2015-12-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2017508184A (ja) * | 2014-02-28 | 2017-03-23 | シャンハイ マイクロ エレクトロニクス イクイプメント カンパニー リミティド | リソグラフィマシンワークピーステーブル、及びその垂直位置初期化方法 |
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US20100079736A1 (en) | 2010-04-01 |
JP5350139B2 (ja) | 2013-11-27 |
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