JP2010098151A5 - - Google Patents
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- Publication number
- JP2010098151A5 JP2010098151A5 JP2008268204A JP2008268204A JP2010098151A5 JP 2010098151 A5 JP2010098151 A5 JP 2010098151A5 JP 2008268204 A JP2008268204 A JP 2008268204A JP 2008268204 A JP2008268204 A JP 2008268204A JP 2010098151 A5 JP2010098151 A5 JP 2010098151A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- nitride semiconductor
- well
- semiconductor light
- well layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 18
- 150000004767 nitrides Chemical class 0.000 claims 16
- 230000004888 barrier function Effects 0.000 claims 2
- 238000000295 emission spectrum Methods 0.000 claims 2
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008268204A JP5196160B2 (ja) | 2008-10-17 | 2008-10-17 | 半導体発光素子 |
| US12/580,030 US8030673B2 (en) | 2008-10-17 | 2009-10-15 | Nitride semiconductor light emitting element |
| DE102009049612.2A DE102009049612B4 (de) | 2008-10-17 | 2009-10-16 | Lichtemittierendes Nitridhalbleiterelement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008268204A JP5196160B2 (ja) | 2008-10-17 | 2008-10-17 | 半導体発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010098151A JP2010098151A (ja) | 2010-04-30 |
| JP2010098151A5 true JP2010098151A5 (cg-RX-API-DMAC7.html) | 2011-09-22 |
| JP5196160B2 JP5196160B2 (ja) | 2013-05-15 |
Family
ID=42035239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008268204A Active JP5196160B2 (ja) | 2008-10-17 | 2008-10-17 | 半導体発光素子 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8030673B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5196160B2 (cg-RX-API-DMAC7.html) |
| DE (1) | DE102009049612B4 (cg-RX-API-DMAC7.html) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2609252C (en) * | 2005-05-23 | 2012-01-10 | Neomax Materials Co., Ltd. | Cu-mo substrate and method for producing same |
| JP5011699B2 (ja) * | 2005-10-18 | 2012-08-29 | 住友電気工業株式会社 | 窒化物半導体発光素子 |
| JP5533744B2 (ja) * | 2010-03-31 | 2014-06-25 | 豊田合成株式会社 | Ｉｉｉ族窒化物半導体発光素子 |
| JP2011238678A (ja) * | 2010-05-07 | 2011-11-24 | Panasonic Corp | 半導体発光装置 |
| TWI446578B (zh) * | 2010-09-23 | 2014-07-21 | Epistar Corp | 發光元件及其製法 |
| KR101125026B1 (ko) * | 2010-11-19 | 2012-03-27 | 엘지이노텍 주식회사 | 발광소자 및 그 발광 소자의 제조 방법 |
| JP6002364B2 (ja) * | 2011-01-27 | 2016-10-05 | 晶元光電股▲ふん▼有限公司 | 発光素子 |
| TWI429030B (zh) * | 2011-05-16 | 2014-03-01 | Sino American Silicon Prod Inc | 發光二極體基板與發光二極體 |
| KR20140019635A (ko) * | 2012-08-06 | 2014-02-17 | 엘지이노텍 주식회사 | 발광 소자 및 발광 소자 패키지 |
| JP6190582B2 (ja) * | 2012-10-26 | 2017-08-30 | 古河電気工業株式会社 | 窒化物半導体装置の製造方法 |
| KR102087933B1 (ko) | 2012-11-05 | 2020-04-14 | 엘지이노텍 주식회사 | 발광 소자 및 이를 포함하는 발광 소자 어레이 |
| EP2985792B1 (en) * | 2013-04-12 | 2019-09-18 | Seoul Viosys Co., Ltd. | Ultraviolet light-emitting device |
| FR3008543B1 (fr) | 2013-07-15 | 2015-07-17 | Soitec Silicon On Insulator | Procede de localisation de dispositifs |
| KR102142714B1 (ko) * | 2014-02-18 | 2020-08-07 | 엘지이노텍 주식회사 | 자외선 발광소자 및 이를 구비하는 발광소자 패키지 |
| JP6367590B2 (ja) * | 2014-03-31 | 2018-08-01 | 日本碍子株式会社 | 発光素子および発光素子構造の製造方法 |
| KR102399381B1 (ko) * | 2015-05-20 | 2022-05-19 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자 |
| JP7140978B2 (ja) * | 2019-05-27 | 2022-09-22 | 日亜化学工業株式会社 | 窒化物半導体発光素子の製造方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3543498B2 (ja) | 1996-06-28 | 2004-07-14 | 豊田合成株式会社 | ３族窒化物半導体発光素子 |
| US6608330B1 (en) | 1998-09-21 | 2003-08-19 | Nichia Corporation | Light emitting device |
| JP3454200B2 (ja) | 1998-09-21 | 2003-10-06 | 日亜化学工業株式会社 | 発光素子 |
| JP2000261106A (ja) * | 1999-01-07 | 2000-09-22 | Matsushita Electric Ind Co Ltd | 半導体発光素子、その製造方法及び光ディスク装置 |
| JP2002084000A (ja) * | 2000-07-03 | 2002-03-22 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| US6586762B2 (en) * | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
| EP1335434A4 (en) * | 2000-09-21 | 2008-10-15 | Sharp Kk | NITRIDE SEMICONDUCTOR LIGHT MISSION ELEMENT AND OPTICAL EQUIPMENT THEREWITH |
| JP2003243700A (ja) * | 2002-02-12 | 2003-08-29 | Toyoda Gosei Co Ltd | Ｉｉｉ族窒化物系化合物半導体発光素子 |
| JP4119158B2 (ja) | 2002-04-23 | 2008-07-16 | 三菱電機株式会社 | 傾斜状多重量子バリアを用いた半導体発光素子 |
| JP4106615B2 (ja) | 2002-07-31 | 2008-06-25 | 信越半導体株式会社 | 発光素子及びそれを用いた照明装置 |
| JP4284946B2 (ja) | 2002-08-27 | 2009-06-24 | ソニー株式会社 | 窒化物系半導体発光素子 |
| US20070290230A1 (en) * | 2003-09-25 | 2007-12-20 | Yasutoshi Kawaguchi | Nitride Semiconductor Device And Production Method Thereof |
| US7323721B2 (en) * | 2004-09-09 | 2008-01-29 | Blue Photonics Inc. | Monolithic multi-color, multi-quantum well semiconductor LED |
| KR100649749B1 (ko) * | 2005-10-25 | 2006-11-27 | 삼성전기주식회사 | 질화물 반도체 발광 소자 |
| JP2007305703A (ja) | 2006-05-10 | 2007-11-22 | Nichia Chem Ind Ltd | 発光装置 |
| JP2009123718A (ja) * | 2007-01-16 | 2009-06-04 | Showa Denko Kk | Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ |
| KR100835116B1 (ko) * | 2007-04-16 | 2008-06-05 | 삼성전기주식회사 | 질화물 반도체 발광 소자 |
| JP5349849B2 (ja) * | 2007-06-12 | 2013-11-20 | ソウル オプト デバイス カンパニー リミテッド | 多重量子ウェル構造の活性領域を有する発光ダイオード |
| JP5260909B2 (ja) * | 2007-07-23 | 2013-08-14 | 住友電気工業株式会社 | 受光デバイス |
| US8143614B2 (en) * | 2009-04-22 | 2012-03-27 | Dr. Samal's Lab LLC | GaN based light emitters with band-edge aligned carrier blocking layers |
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2008
- 2008-10-17 JP JP2008268204A patent/JP5196160B2/ja active Active
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2009
- 2009-10-15 US US12/580,030 patent/US8030673B2/en active Active
- 2009-10-16 DE DE102009049612.2A patent/DE102009049612B4/de active Active