JP2010080921A - 熱硬化型ダイボンドフィルム - Google Patents
熱硬化型ダイボンドフィルム Download PDFInfo
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- JP2010080921A JP2010080921A JP2009159125A JP2009159125A JP2010080921A JP 2010080921 A JP2010080921 A JP 2010080921A JP 2009159125 A JP2009159125 A JP 2009159125A JP 2009159125 A JP2009159125 A JP 2009159125A JP 2010080921 A JP2010080921 A JP 2010080921A
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- die
- film
- bonding film
- acrylate
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- H—ELECTRICITY
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/38—Layered products comprising a layer of synthetic resin comprising epoxy resins
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
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- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/42—Layered products comprising a layer of synthetic resin comprising condensation resins of aldehydes, e.g. with phenols, ureas or melamines
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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Abstract
【解決手段】熱硬化型ダイボンドフィルム3は、半導体装置の製造の際に用いる熱硬化型ダイボンドフィルムであって、エポキシ樹脂、フェノール樹脂及びアクリル共重合体を少なくとも含み、前記エポキシ樹脂とフェノール樹脂の合計重量をXとし、アクリル共重合体の重量をYとした場合に、その比率X/Yが0.7〜5である。
【選択図】図1
Description
即ち、本発明によれば、エポキシ樹脂、フェノール樹脂及びアクリル共重合体を含み、エポキシ樹脂とフェノール樹脂の合計重量をXとし、アクリル共重合体の重量をYとした場合に、その比率X/Yを0.7〜5とすることにより、例えば、被着体上にダイボンドされた大型化・薄型化の半導体素子の周縁部において、微小な気泡(マイクロボイド)や局所的なヒケ(窪み)の発生を低減できる。その結果、耐湿はんだリフロー試験に対する耐久性が向上し、また樹脂モールドの際には、半導体素子の周縁部にモールド樹脂が入り込むのを防止して、半導体素子の破損を防ぐことができる。
水:分散成分(γL d) 21.8mJ/m2、極性成分(γL p) 51.0mJ/m2
ヨウ化メチレン:分散成分(γL d) 49.5mJ/m2、極性成分(γL p) 1.3mJ/m2
次に、本発明のダイシング・ダイボンドフィルムの製造方法について、ダイシング・ダイボンドフィルム10を例にして説明する。先ず、基材1は、従来公知の製膜方法により製膜することができる。当該製膜方法としては、例えばカレンダー製膜法、有機溶媒中でのキャスティング法、密閉系でのインフレーション押出法、Tダイ押出法、共押出し法、ドライラミネート法等が例示できる。
次に、本実施の形態に係るダイボンドフィルムを用いた半導体装置の製造方法について説明する。図3はダイボンドフィルムを介して半導体素子を実装した例を示す断面模式図である。
前記基板等上に半導体素子を3次元実装する場合、半導体素子の回路が形成される面側には、バッファーコート膜が形成されている。当該バッファーコート膜としては、例えば窒化珪素膜やポリイミド樹脂等の耐熱樹脂からなるものが挙げられる。
エポキシ樹脂(日本化薬(株)製、商品名;EPPN501HY、溶融粘度0.7Pa・s)50部、フェノール樹脂(明和化成(株)製、商品名;MEH7800、溶融粘度 1.2Pa・s)50部、アクリル共重合体(ノガワケミカル(株)製、商品名;レビタルAR31、重量平均分子量70万、ガラス転移点−15℃)100部、及びフィラーとしての球状シリカ(アドマテックス(株)製、商品名;S0−25R、平均粒径0.5μm)70部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
エポキシ樹脂(日本化薬(株)製、商品名;EPPN501HY、溶融粘度0.7Pa・s)120部、フェノール樹脂(明和化成(株)製、商品名;MEH7800、溶融粘度 1.2Pa・s)120部、アクリル共重合体(ノガワケミカル(株)製、商品名;レビタルAR31、重量平均分子量70万、ガラス転移点−15℃)100部、硬化触媒(北興化学(株)製、商品名;TPP−K)0.5部及びフィラーとしての球状シリカ(アドマテックス(株)製、商品名;S0−25R、平均粒径0.5μm)70部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
エポキシ樹脂(日本化薬(株)製、商品名;EPPN501HY、溶融粘度0.7Pa・s)145部、フェノール樹脂(明和化成(株)製、商品名;MEH7800、溶融粘度 1.2Pa・s)145部、アクリル共重合体(ノガワケミカル(株)製、商品名;レビタルAR31、重量平均分子量70万、ガラス転移点−15℃)100部、硬化触媒(北興化学(株)製、商品名;TPP−K)0.5部及びフィラーとしての球状シリカ(アドマテックス(株)製、商品名;S0−25R、平均粒径0.5μm)70部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
エポキシ樹脂(JER(株)製、商品名;エピコート1001、溶融粘度1.5Pa・s)33部、フェノール樹脂(明和化成(株)製、商品名;MEH7851、溶融粘度 3.4Pa・s)33部、アクリル共重合体(ノガワケミカル(株)製、商品名;レビタルAR31、重量平均分子量70万、ガラス転移点−15℃)100部、及びフィラーとしての球状シリカ(アドマテックス(株)製、商品名;S0−25R、平均粒径0.5μm)58部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
エポキシ樹脂(JER(株)製、商品名;エピコート1001、溶融粘度1.5Pa・s)13部、フェノール樹脂(明和化成(株)製、商品名;MEH7851、溶融粘度 3.4Pa・s)13部、アクリル共重合体(ノガワケミカル(株)製、商品名;レビタルAR31、重量平均分子量70万、ガラス転移点−15℃)100部、及びフィラーとしての球状シリカ(アドマテックス(株)製、商品名;S0−25R、平均粒径0.5μm)75部をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
カルボキシル基含有アクリル共重合体の重量平均分子量は、ゲルパーミエーションクロマトグラフィーによるポリスチレン換算の値である。ゲルパーミエーションクロマトグラフィーは、TSK G2000H HR、G3000H HR、G4000H HR、及びGMH−H HRの4本のカラム(いずれも東ソ株式会社製)を直列に接続して使用し、溶雛液にテトラヒドロフランを用いて、流速1ml/分、温度40℃、サンプル濃度0.1重量%テトラヒドロフラン溶液、サンプル注入量500μlの条件で行い、検出器には示差屈折計を用いた。
作製した各熱硬化型ダイボンドフィルムについて、それぞれ120〜130℃における溶融粘度を測定した。即ち、ダイボンドフィルムを厚さ2mmまで積層させた。次に、φ8mmに切り出し、固体粘弾性測定装置(Rheometic Scientific社製、ARES)を用いて昇温速度10℃/分、周波数1MHzに於いて50〜150℃での溶融粘度を測定し、120〜130℃での溶融粘度の平均値を求めた。結果を下記表1に示す。
作製した各熱硬化型ダイボンドフィルムをそれぞれ温度40℃の条件下で、10mm角、厚さ75μmの半導体チップに貼り付けた。更に、各ダイボンドフィルムを介して半導体チップをBGA基板にマウントした。マウント条件は、温度120℃、圧力0.1MPa、1秒とした。
作製した各熱硬化型ダイボンドフィルムをそれぞれ温度40℃の条件下で、10mm角、厚さ75μmの半導体チップに貼り付けた。更に、各ダイボンドフィルムを介して半導体チップをBGA基板にマウントした。マウント条件は、温度120℃、圧力0.1MPa、1秒とした。
各実施例及び比較例で使用したアクリル共重合体のガラス転移点は、粘弾性測定装置(Rheometic Scientific社製、ARES)を用いて昇温速度10℃/分、周波数1MHzに於けるTan(G”(損失弾性率)/G’(貯蔵弾性率))から測定した。
下記表1の結果から分かる通り、比較例1及び2の様に、アクリル共重合体の含有量に対するエポキシ樹脂とフェノール樹脂の合計の含有量の比(X/Y)が0.7未満であると、半導体チップの周縁部にマイクロボイドが多数発生することが確認された。また、耐湿リフロー性についても、熱硬化型ダイボンドフィルムとBGA基板との間に剥離が生じていることが確認された。
2 粘着剤層
2a 部分
2b 部分
3、3’、13、21 ダイボンドフィルム(熱硬化型ダイボンドフィルム)
3a ダイボンドフィルム
5 半導体チップ
6 被着体
7 ボンディングワイヤー
8 封止樹脂
9 スペーサ
10、11 ダイシング・ダイボンドフィルム
15 半導体チップ
Claims (7)
- 半導体装置の製造の際に用いる熱硬化型ダイボンドフィルムであって、
エポキシ樹脂、フェノール樹脂及びアクリル共重合体を少なくとも含み、前記エポキシ樹脂とフェノール樹脂の合計重量をXとし、アクリル共重合体の重量をYとした場合に、その比率X/Yが0.7〜5である熱硬化型ダイボンドフィルム。 - 120〜130℃における溶融粘度が500〜3500Pa・sの範囲内である請求項1に記載の熱硬化型ダイボンドフィルム。
- 前記アクリル共重合体は、10〜60重量%のブチルアクリレートと、40〜90重量%のエチルアクリレートとを含む請求項1又は2に記載の熱硬化型ダイボンドフィルム。
- 前記アクリル共重合体のガラス転移点が−30〜30℃の範囲内である請求項1〜3の何れか1項に記載の熱硬化型ダイボンドフィルム。
- 前記エポキシ樹脂の120〜130℃における溶融粘度が、0.05〜7Pa・sの範囲内である請求項1〜4の何れか1項に記載の熱硬化型ダイボンドフィルム。
- 前記フェノール樹脂の120〜130℃における溶融粘度が、0.3〜35Pa・sの範囲内である請求項1〜5の何れか1項に記載の熱硬化型ダイボンドフィルム。
- 請求項1〜6の何れか1項に記載の熱硬化型ダイボンドフィルムが、ダイシングフィルム上に積層された構造であるダイシング・ダイボンドフィルム。
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WO2008047610A1 (fr) * | 2006-10-06 | 2008-04-24 | Sumitomo Bakelite Company Limited | Film pour semi-conducteur, procédé de production de film pour semi-conducteur et dispositif à semiconducteurs |
JP2007059936A (ja) * | 2006-10-20 | 2007-03-08 | Sumitomo Bakelite Co Ltd | ダイボンディング用フィルム状接着剤並びにそれを用いた半導体装置の製造方法及び半導体装置 |
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JP2011233599A (ja) * | 2010-04-23 | 2011-11-17 | Toshiba Corp | 半導体装置の製造方法 |
WO2011155406A1 (ja) * | 2010-06-08 | 2011-12-15 | 日東電工株式会社 | 熱硬化型ダイボンドフィルム |
JP2012019204A (ja) * | 2010-06-08 | 2012-01-26 | Nitto Denko Corp | 熱硬化型ダイボンドフィルム |
CN102934211A (zh) * | 2010-06-08 | 2013-02-13 | 日东电工株式会社 | 热固型芯片接合薄膜 |
JP2015026707A (ja) * | 2013-07-26 | 2015-02-05 | 日東電工株式会社 | ダイシングテープ付きダイボンドフィルム、及び、半導体装置の製造方法 |
Also Published As
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KR20100027014A (ko) | 2010-03-10 |
US20120135242A1 (en) | 2012-05-31 |
CN101661909A (zh) | 2010-03-03 |
KR20110019408A (ko) | 2011-02-25 |
US8580617B2 (en) | 2013-11-12 |
JP4939574B2 (ja) | 2012-05-30 |
TW201016821A (en) | 2010-05-01 |
CN101661909B (zh) | 2011-04-27 |
TWI372174B (en) | 2012-09-11 |
US20100055842A1 (en) | 2010-03-04 |
KR101549281B1 (ko) | 2015-09-01 |
US8143106B2 (en) | 2012-03-27 |
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