JP2010080741A - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
- Publication number
- JP2010080741A JP2010080741A JP2008248530A JP2008248530A JP2010080741A JP 2010080741 A JP2010080741 A JP 2010080741A JP 2008248530 A JP2008248530 A JP 2008248530A JP 2008248530 A JP2008248530 A JP 2008248530A JP 2010080741 A JP2010080741 A JP 2010080741A
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- JP
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- Prior art keywords
- layer
- type
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- light emitting
- nitride semiconductor
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 150000004767 nitrides Chemical class 0.000 claims description 64
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 312
- 239000012535 impurity Substances 0.000 description 15
- 239000013078 crystal Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 14
- 229910002704 AlGaN Inorganic materials 0.000 description 13
- 239000011777 magnesium Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 230000002269 spontaneous effect Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000628 photoluminescence spectroscopy Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008248530A JP2010080741A (ja) | 2008-09-26 | 2008-09-26 | 半導体発光素子 |
| CN200980134707.9A CN102144342B (zh) | 2008-09-05 | 2009-09-03 | 氮化物半导体发光器件和半导体发光器件 |
| US13/062,460 US20110220871A1 (en) | 2008-09-05 | 2009-09-03 | Nitride semiconductor light-emitting device and semiconductor light-emitting device |
| PCT/JP2009/065408 WO2010027016A1 (ja) | 2008-09-05 | 2009-09-03 | 窒化物半導体発光素子および半導体発光素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008248530A JP2010080741A (ja) | 2008-09-26 | 2008-09-26 | 半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010080741A true JP2010080741A (ja) | 2010-04-08 |
| JP2010080741A5 JP2010080741A5 (enrdf_load_stackoverflow) | 2012-06-14 |
Family
ID=42210839
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008248530A Pending JP2010080741A (ja) | 2008-09-05 | 2008-09-26 | 半導体発光素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010080741A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101064020B1 (ko) | 2010-04-23 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
| JP2012064728A (ja) * | 2010-09-15 | 2012-03-29 | Stanley Electric Co Ltd | 光源装置 |
| JP2012146847A (ja) * | 2011-01-13 | 2012-08-02 | Sharp Corp | 窒化物半導体発光素子および半導体光学装置 |
| JP2013135224A (ja) * | 2011-12-26 | 2013-07-08 | Lg Innotek Co Ltd | 発光素子 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007012327A1 (de) * | 2005-07-29 | 2007-02-01 | Osram Opto Semiconductors Gmbh | Optoelektronischer halbleiterchip |
| JP2007214260A (ja) * | 2006-02-08 | 2007-08-23 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
-
2008
- 2008-09-26 JP JP2008248530A patent/JP2010080741A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007012327A1 (de) * | 2005-07-29 | 2007-02-01 | Osram Opto Semiconductors Gmbh | Optoelektronischer halbleiterchip |
| JP2007214260A (ja) * | 2006-02-08 | 2007-08-23 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
Non-Patent Citations (1)
| Title |
|---|
| JPN6012049249; Ｋｏｉｃｈｉ ＯＫＡＭＯＴＯ， Ｉｓａｍｕ ＮＩＫＩ， Ａｌｅｘａｎｄｅｒ ＳＨＶＡＲＴＳＥＲ， Ｙｕｋｉｏ ＮＡＲＵＫＡＷＡ， Ｔａｋａｓｈｉ ＭＵＫＡＩ ａｎｄ Ａｘｅｌ ＳＣＨＥＲＥ: 'Ｓｕｒｆａｃｅ-ｐｌａｓｍｏｎ-ｅｎｈａｎｃｅｄ ｌｉｇｈｔ ｅｍｉｔｔｅｒｓ ｂａｓｅｄ ｏｎ ＩｎＧａＮ ｑｕａｎｔｕｍ ｗｅｌｌｓ' Ｎａｔｕｒｅ Ｍａｔｅｒｉａｌｓ ＶＯＬ ３, 200409, ｐｐ．６０１-ｐｐ．６０５, Ｎａｔｕｒｅ Ｐｕｂｌｉｓｈｉｎｇ Ｇｒｏｕｐ * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101064020B1 (ko) | 2010-04-23 | 2011-09-08 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
| JP2011233897A (ja) * | 2010-04-23 | 2011-11-17 | Lg Innotek Co Ltd | 発光素子、発光素子パッケージ |
| US8624283B2 (en) | 2010-04-23 | 2014-01-07 | Lg Innotek Co., Ltd. | Light emitting device, manufacturing method thereof, light emitting device package, and lighting system |
| JP2012064728A (ja) * | 2010-09-15 | 2012-03-29 | Stanley Electric Co Ltd | 光源装置 |
| JP2012146847A (ja) * | 2011-01-13 | 2012-08-02 | Sharp Corp | 窒化物半導体発光素子および半導体光学装置 |
| JP2013135224A (ja) * | 2011-12-26 | 2013-07-08 | Lg Innotek Co Ltd | 発光素子 |
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