JP2010062531A5 - - Google Patents
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- Publication number
- JP2010062531A5 JP2010062531A5 JP2009147390A JP2009147390A JP2010062531A5 JP 2010062531 A5 JP2010062531 A5 JP 2010062531A5 JP 2009147390 A JP2009147390 A JP 2009147390A JP 2009147390 A JP2009147390 A JP 2009147390A JP 2010062531 A5 JP2010062531 A5 JP 2010062531A5
- Authority
- JP
- Japan
- Prior art keywords
- hall effect
- magnetic field
- spin hall
- layer
- generating device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005291 magnetic effect Effects 0.000 claims 49
- 230000005355 Hall effect Effects 0.000 claims 37
- 230000005294 ferromagnetic effect Effects 0.000 claims 16
- 239000000463 material Substances 0.000 claims 6
- 239000012212 insulator Substances 0.000 claims 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- 238000005452 bending Methods 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 238000001514 detection method Methods 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 229910052733 gallium Inorganic materials 0.000 claims 2
- 239000000395 magnesium oxide Substances 0.000 claims 2
- 230000005415 magnetization Effects 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 1
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229940056932 lead sulfide Drugs 0.000 claims 1
- 229910052981 lead sulfide Inorganic materials 0.000 claims 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 1
- 239000000696 magnetic material Substances 0.000 claims 1
- VCEXCCILEWFFBG-UHFFFAOYSA-N mercury telluride Chemical compound [Hg]=[Te] VCEXCCILEWFFBG-UHFFFAOYSA-N 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 claims 1
- YQMLDSWXEQOSPP-UHFFFAOYSA-N selanylidenemercury Chemical compound [Hg]=[Se] YQMLDSWXEQOSPP-UHFFFAOYSA-N 0.000 claims 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009147390A JP5202450B2 (ja) | 2008-08-06 | 2009-06-22 | 局所磁界発生デバイス、磁界センサ、及び磁気ヘッド |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008203471 | 2008-08-06 | ||
| JP2008203471 | 2008-08-06 | ||
| JP2009147390A JP5202450B2 (ja) | 2008-08-06 | 2009-06-22 | 局所磁界発生デバイス、磁界センサ、及び磁気ヘッド |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010062531A JP2010062531A (ja) | 2010-03-18 |
| JP2010062531A5 true JP2010062531A5 (enrdf_load_stackoverflow) | 2012-03-29 |
| JP5202450B2 JP5202450B2 (ja) | 2013-06-05 |
Family
ID=42188964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009147390A Expired - Fee Related JP5202450B2 (ja) | 2008-08-06 | 2009-06-22 | 局所磁界発生デバイス、磁界センサ、及び磁気ヘッド |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5202450B2 (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101457511B1 (ko) | 2011-08-18 | 2014-11-04 | 코넬 유니버시티 | 스핀 홀 효과 자기 장치, 방법, 및 적용 |
| WO2016011435A1 (en) | 2014-07-17 | 2016-01-21 | Cornell University | Circuits and devices based on enhanced spin hall effect for efficient spin transfer torque |
| US10181334B1 (en) * | 2017-06-23 | 2019-01-15 | Western Digital Technologies, Inc. | Spin-orbit torque based magnetic recording |
| JP6539008B1 (ja) * | 2018-02-19 | 2019-07-03 | Tdk株式会社 | スピン軌道トルク型磁化回転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ |
| CN114843394A (zh) * | 2021-02-02 | 2022-08-02 | 中国科学院物理研究所 | 自旋轨道力矩磁器件及其制造方法 |
| JP7555120B2 (ja) * | 2021-04-02 | 2024-09-24 | 学校法人 関西大学 | 磁化制御デバイス及び磁気メモリ装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008071720A (ja) * | 2006-09-15 | 2008-03-27 | Institute Of Physical & Chemical Research | バッテリー、バッテリーシステムおよびマイクロ波発信装置 |
| DE602007011491D1 (de) * | 2006-10-10 | 2011-02-03 | Univ Plymouth | Verfahren zur detektion der ladungsträgerspinpolarisation und vorrichtung dafür |
| JP4934582B2 (ja) * | 2007-12-25 | 2012-05-16 | 株式会社日立製作所 | スピンホール効果素子を用いた磁気センサ、磁気ヘッド及び磁気メモリ |
-
2009
- 2009-06-22 JP JP2009147390A patent/JP5202450B2/ja not_active Expired - Fee Related
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