JP2010050399A5 - - Google Patents

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Publication number
JP2010050399A5
JP2010050399A5 JP2008215549A JP2008215549A JP2010050399A5 JP 2010050399 A5 JP2010050399 A5 JP 2010050399A5 JP 2008215549 A JP2008215549 A JP 2008215549A JP 2008215549 A JP2008215549 A JP 2008215549A JP 2010050399 A5 JP2010050399 A5 JP 2010050399A5
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JP
Japan
Prior art keywords
terahertz wave
excitation light
unit
electrode
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008215549A
Other languages
English (en)
Japanese (ja)
Other versions
JP5328265B2 (ja
JP2010050399A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008215549A priority Critical patent/JP5328265B2/ja
Priority claimed from JP2008215549A external-priority patent/JP5328265B2/ja
Priority to US12/509,882 priority patent/US8153999B2/en
Priority to EP09167169A priority patent/EP2159877A1/en
Priority to CN2009101659585A priority patent/CN101661942B/zh
Publication of JP2010050399A publication Critical patent/JP2010050399A/ja
Publication of JP2010050399A5 publication Critical patent/JP2010050399A5/ja
Application granted granted Critical
Publication of JP5328265B2 publication Critical patent/JP5328265B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008215549A 2008-08-25 2008-08-25 テラヘルツ波発生素子、及びテラヘルツ波発生装置 Expired - Fee Related JP5328265B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008215549A JP5328265B2 (ja) 2008-08-25 2008-08-25 テラヘルツ波発生素子、及びテラヘルツ波発生装置
US12/509,882 US8153999B2 (en) 2008-08-25 2009-07-27 Terahertz wave generating device and apparatus using the same
EP09167169A EP2159877A1 (en) 2008-08-25 2009-08-04 Terahertz wave generating device and apparatus using the same
CN2009101659585A CN101661942B (zh) 2008-08-25 2009-08-20 太赫波产生器件和使用太赫波产生器件的装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008215549A JP5328265B2 (ja) 2008-08-25 2008-08-25 テラヘルツ波発生素子、及びテラヘルツ波発生装置

Publications (3)

Publication Number Publication Date
JP2010050399A JP2010050399A (ja) 2010-03-04
JP2010050399A5 true JP2010050399A5 (enExample) 2011-08-18
JP5328265B2 JP5328265B2 (ja) 2013-10-30

Family

ID=41110907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008215549A Expired - Fee Related JP5328265B2 (ja) 2008-08-25 2008-08-25 テラヘルツ波発生素子、及びテラヘルツ波発生装置

Country Status (4)

Country Link
US (1) US8153999B2 (enExample)
EP (1) EP2159877A1 (enExample)
JP (1) JP5328265B2 (enExample)
CN (1) CN101661942B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011059112A1 (ja) 2009-11-13 2011-05-19 株式会社日立ハイテクノロジーズ 粒子含有細胞集合体
JP5737956B2 (ja) * 2011-01-08 2015-06-17 キヤノン株式会社 テラヘルツ波素子
JP5904530B2 (ja) * 2011-12-19 2016-04-13 株式会社Ｓｃｒｅｅｎホールディングス 電磁波発生素子、電磁波発生装置および電磁波発生方法
JP6299958B2 (ja) * 2014-01-30 2018-03-28 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
CN107359135A (zh) * 2016-05-09 2017-11-17 中国科学院半导体研究所 太赫兹天线片上集成器件的转移键合结构及其制备方法
DE102019127117A1 (de) * 2019-10-09 2021-04-15 Ruhr-Universität Bochum, Körperschaft des öffentliches Rechts Quantenkaskadenlaser
CN115939767A (zh) * 2022-12-30 2023-04-07 之江实验室 集成天线及天线装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028971A (en) * 1990-06-04 1991-07-02 The United States Of America As Represented By The Secretary Of The Army High power photoconductor bulk GaAs switch
GB9300627D0 (en) * 1993-01-14 1993-03-03 Hitachi Europ Ltd Terahertz radiation emission and detection
US5894125A (en) * 1997-08-18 1999-04-13 Lucent Technologies Inc. Near field terahertz imaging
US6320191B1 (en) * 1998-03-27 2001-11-20 Picometrix, Inc. Dispersive precompensator for use in an electromagnetic radiation generation and detection system
AT411503B8 (de) * 2002-02-28 2004-05-25 Femtolasers Produktions Gmbh Einrichtung zur erzeugung von terahertz-strahlung sowie halbleiterbauelement
US7630588B2 (en) * 2003-06-25 2009-12-08 Canon Kabushiki Kaisha High frequency electrical signal control device and sensing system
JP3913253B2 (ja) * 2004-07-30 2007-05-09 キヤノン株式会社 光半導体装置およびその製造方法
JP4878180B2 (ja) * 2005-03-24 2012-02-15 キヤノン株式会社 電磁波を用いる検査装置
JP2006313803A (ja) * 2005-05-09 2006-11-16 Matsushita Electric Ind Co Ltd テラヘルツ電磁波発生装置
US7683444B2 (en) * 2005-09-30 2010-03-23 The United States Of America As Represented By The Secretary Of The Navy Metamaterial structure has resonant and strip line elements comprising a photoconductive semiconductor material formed on substrate to induce negative permeability and negative permittivity in operating frequency range
JP5196779B2 (ja) * 2006-03-17 2013-05-15 キヤノン株式会社 光伝導素子及びセンサ装置
DE102006012817B4 (de) * 2006-03-21 2017-10-12 Batop Gmbh Photoleitender Terahertz-Emitter
JP5006642B2 (ja) * 2006-05-31 2012-08-22 キヤノン株式会社 テラヘルツ波発振器
JP4857027B2 (ja) * 2006-05-31 2012-01-18 キヤノン株式会社 レーザ素子
JP5028068B2 (ja) * 2006-05-31 2012-09-19 キヤノン株式会社 アクティブアンテナ発振器
US7741933B2 (en) * 2006-06-30 2010-06-22 The Charles Stark Draper Laboratory, Inc. Electromagnetic composite metamaterial
JP4977048B2 (ja) 2007-02-01 2012-07-18 キヤノン株式会社 アンテナ素子
US7997495B2 (en) * 2007-03-15 2011-08-16 James Neil Rodgers Precisely tuned RFID antenna
JP5127360B2 (ja) * 2007-08-20 2013-01-23 キヤノン株式会社 発振素子、及び検査装置
JP2010050287A (ja) * 2008-08-21 2010-03-04 Canon Inc 光伝導素子

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