CN101661942B - 太赫波产生器件和使用太赫波产生器件的装置 - Google Patents

太赫波产生器件和使用太赫波产生器件的装置 Download PDF

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Publication number
CN101661942B
CN101661942B CN2009101659585A CN200910165958A CN101661942B CN 101661942 B CN101661942 B CN 101661942B CN 2009101659585 A CN2009101659585 A CN 2009101659585A CN 200910165958 A CN200910165958 A CN 200910165958A CN 101661942 B CN101661942 B CN 101661942B
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China
Prior art keywords
electrode
charge carrier
terahertz wave
wave generator
terahertz
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Expired - Fee Related
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CN2009101659585A
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Chinese (zh)
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CN101661942A (zh
Inventor
井辻健明
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/005—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements for radiating non-sinusoidal waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
    • H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Waveguide Aerials (AREA)
CN2009101659585A 2008-08-25 2009-08-20 太赫波产生器件和使用太赫波产生器件的装置 Expired - Fee Related CN101661942B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008215549A JP5328265B2 (ja) 2008-08-25 2008-08-25 テラヘルツ波発生素子、及びテラヘルツ波発生装置
JP2008215549 2008-08-25
JP2008-215549 2008-08-25

Publications (2)

Publication Number Publication Date
CN101661942A CN101661942A (zh) 2010-03-03
CN101661942B true CN101661942B (zh) 2011-04-13

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CN2009101659585A Expired - Fee Related CN101661942B (zh) 2008-08-25 2009-08-20 太赫波产生器件和使用太赫波产生器件的装置

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US (1) US8153999B2 (enExample)
EP (1) EP2159877A1 (enExample)
JP (1) JP5328265B2 (enExample)
CN (1) CN101661942B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011059112A1 (ja) 2009-11-13 2011-05-19 株式会社日立ハイテクノロジーズ 粒子含有細胞集合体
JP5737956B2 (ja) * 2011-01-08 2015-06-17 キヤノン株式会社 テラヘルツ波素子
JP5904530B2 (ja) * 2011-12-19 2016-04-13 株式会社Ｓｃｒｅｅｎホールディングス 電磁波発生素子、電磁波発生装置および電磁波発生方法
JP6299958B2 (ja) * 2014-01-30 2018-03-28 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
CN107359135A (zh) * 2016-05-09 2017-11-17 中国科学院半导体研究所 太赫兹天线片上集成器件的转移键合结构及其制备方法
DE102019127117A1 (de) * 2019-10-09 2021-04-15 Ruhr-Universität Bochum, Körperschaft des öffentliches Rechts Quantenkaskadenlaser
CN115939767A (zh) * 2022-12-30 2023-04-07 之江实验室 集成天线及天线装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028971A (en) * 1990-06-04 1991-07-02 The United States Of America As Represented By The Secretary Of The Army High power photoconductor bulk GaAs switch
EP0606776A2 (en) * 1993-01-14 1994-07-20 Hitachi Europe Limited Terahertz radiation emission and detection
DE102006012817A1 (de) * 2006-03-21 2007-10-04 Batop Gmbh Photoleitender Terahertz Emitter

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Publication number Priority date Publication date Assignee Title
US5894125A (en) * 1997-08-18 1999-04-13 Lucent Technologies Inc. Near field terahertz imaging
US6320191B1 (en) * 1998-03-27 2001-11-20 Picometrix, Inc. Dispersive precompensator for use in an electromagnetic radiation generation and detection system
AT411503B8 (de) * 2002-02-28 2004-05-25 Femtolasers Produktions Gmbh Einrichtung zur erzeugung von terahertz-strahlung sowie halbleiterbauelement
EP1903328B1 (en) * 2003-06-25 2011-12-21 Canon Kabushiki Kaisha High frequency electrical signal control device and sensing system
JP3913253B2 (ja) * 2004-07-30 2007-05-09 キヤノン株式会社 光半導体装置およびその製造方法
JP4878180B2 (ja) * 2005-03-24 2012-02-15 キヤノン株式会社 電磁波を用いる検査装置
JP2006313803A (ja) * 2005-05-09 2006-11-16 Matsushita Electric Ind Co Ltd テラヘルツ電磁波発生装置
US7683444B2 (en) * 2005-09-30 2010-03-23 The United States Of America As Represented By The Secretary Of The Navy Metamaterial structure has resonant and strip line elements comprising a photoconductive semiconductor material formed on substrate to induce negative permeability and negative permittivity in operating frequency range
JP5196779B2 (ja) * 2006-03-17 2013-05-15 キヤノン株式会社 光伝導素子及びセンサ装置
JP4857027B2 (ja) * 2006-05-31 2012-01-18 キヤノン株式会社 レーザ素子
JP5028068B2 (ja) * 2006-05-31 2012-09-19 キヤノン株式会社 アクティブアンテナ発振器
JP5006642B2 (ja) * 2006-05-31 2012-08-22 キヤノン株式会社 テラヘルツ波発振器
US7741933B2 (en) * 2006-06-30 2010-06-22 The Charles Stark Draper Laboratory, Inc. Electromagnetic composite metamaterial
JP4977048B2 (ja) 2007-02-01 2012-07-18 キヤノン株式会社 アンテナ素子
US7997495B2 (en) * 2007-03-15 2011-08-16 James Neil Rodgers Precisely tuned RFID antenna
JP5127360B2 (ja) * 2007-08-20 2013-01-23 キヤノン株式会社 発振素子、及び検査装置
JP2010050287A (ja) * 2008-08-21 2010-03-04 Canon Inc 光伝導素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5028971A (en) * 1990-06-04 1991-07-02 The United States Of America As Represented By The Secretary Of The Army High power photoconductor bulk GaAs switch
EP0606776A2 (en) * 1993-01-14 1994-07-20 Hitachi Europe Limited Terahertz radiation emission and detection
DE102006012817A1 (de) * 2006-03-21 2007-10-04 Batop Gmbh Photoleitender Terahertz Emitter

Also Published As

Publication number Publication date
EP2159877A1 (en) 2010-03-03
US8153999B2 (en) 2012-04-10
US20100044597A1 (en) 2010-02-25
CN101661942A (zh) 2010-03-03
JP5328265B2 (ja) 2013-10-30
JP2010050399A (ja) 2010-03-04

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