JP2009544151A - 発光素子とともに使用するための実質的に透明な材料 - Google Patents
発光素子とともに使用するための実質的に透明な材料 Download PDFInfo
- Publication number
- JP2009544151A JP2009544151A JP2009519487A JP2009519487A JP2009544151A JP 2009544151 A JP2009544151 A JP 2009544151A JP 2009519487 A JP2009519487 A JP 2009519487A JP 2009519487 A JP2009519487 A JP 2009519487A JP 2009544151 A JP2009544151 A JP 2009544151A
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- Prior art keywords
- substantially transparent
- transparent material
- particles
- compound
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000012780 transparent material Substances 0.000 title claims abstract description 87
- 239000002245 particle Substances 0.000 claims abstract description 171
- 150000001875 compounds Chemical class 0.000 claims abstract description 94
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 17
- 125000000524 functional group Chemical group 0.000 claims abstract description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 27
- 239000004408 titanium dioxide Substances 0.000 claims description 23
- 229920000642 polymer Polymers 0.000 claims description 13
- 239000004642 Polyimide Substances 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- 230000009881 electrostatic interaction Effects 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 229920000098 polyolefin Polymers 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 5
- 229910052700 potassium Inorganic materials 0.000 claims description 5
- 239000011591 potassium Substances 0.000 claims description 5
- 229910002113 barium titanate Inorganic materials 0.000 claims description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 4
- 229910021523 barium zirconate Inorganic materials 0.000 claims description 4
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 claims description 4
- 125000004122 cyclic group Chemical group 0.000 claims description 4
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 4
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 claims description 3
- FFQALBCXGPYQGT-UHFFFAOYSA-N 2,4-difluoro-5-(trifluoromethyl)aniline Chemical compound NC1=CC(C(F)(F)F)=C(F)C=C1F FFQALBCXGPYQGT-UHFFFAOYSA-N 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 3
- 239000004693 Polybenzimidazole Substances 0.000 claims description 3
- 239000004697 Polyetherimide Substances 0.000 claims description 3
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 claims description 3
- 229920001971 elastomer Polymers 0.000 claims description 3
- 239000000806 elastomer Substances 0.000 claims description 3
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 claims description 3
- 229920001652 poly(etherketoneketone) Polymers 0.000 claims description 3
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- 229920005573 silicon-containing polymer Polymers 0.000 claims description 3
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims 2
- 239000010452 phosphate Substances 0.000 claims 2
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- 125000002877 alkyl aryl group Chemical group 0.000 description 9
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- 125000003118 aryl group Chemical group 0.000 description 9
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
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- 150000003839 salts Chemical class 0.000 description 5
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- 229910052726 zirconium Inorganic materials 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 125000005248 alkyl aryloxy group Chemical group 0.000 description 3
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- 229910052788 barium Inorganic materials 0.000 description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
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- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
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- 238000003980 solgel method Methods 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 3
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IVORCBKUUYGUOL-UHFFFAOYSA-N 1-ethynyl-2,4-dimethoxybenzene Chemical compound COC1=CC=C(C#C)C(OC)=C1 IVORCBKUUYGUOL-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical class OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 229910002056 binary alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- BSDOQSMQCZQLDV-UHFFFAOYSA-N butan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] BSDOQSMQCZQLDV-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910000000 metal hydroxide Inorganic materials 0.000 description 2
- 150000004692 metal hydroxides Chemical class 0.000 description 2
- 239000012074 organic phase Substances 0.000 description 2
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- 229910002059 quaternary alloy Inorganic materials 0.000 description 2
- 238000004513 sizing Methods 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- RWLALWYNXFYRGW-UHFFFAOYSA-N 2-Ethyl-1,3-hexanediol Chemical compound CCCC(O)C(CC)CO RWLALWYNXFYRGW-UHFFFAOYSA-N 0.000 description 1
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- DBRMDLFKTGMYEH-UHFFFAOYSA-N CCCCCCCCCCCCCCCCCCCCCCP(O)=O Chemical compound CCCCCCCCCCCCCCCCCCCCCCP(O)=O DBRMDLFKTGMYEH-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
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- 229910052454 barium strontium titanate Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- LKRQLONRWRKSFO-UHFFFAOYSA-N chembl57969 Chemical compound CCCCCCCCCCCCCCCCCCP(O)=O LKRQLONRWRKSFO-UHFFFAOYSA-N 0.000 description 1
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- 125000003700 epoxy group Chemical group 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000010902 jet-milling Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
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- 238000003801 milling Methods 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- FTMKAMVLFVRZQX-UHFFFAOYSA-N octadecylphosphonic acid Chemical compound CCCCCCCCCCCCCCCCCCP(O)(O)=O FTMKAMVLFVRZQX-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003009 phosphonic acids Chemical class 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
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- BCWYYHBWCZYDNB-UHFFFAOYSA-N propan-2-ol;zirconium Chemical compound [Zr].CC(C)O.CC(C)O.CC(C)O.CC(C)O BCWYYHBWCZYDNB-UHFFFAOYSA-N 0.000 description 1
- ZGSOBQAJAUGRBK-UHFFFAOYSA-N propan-2-olate;zirconium(4+) Chemical compound [Zr+4].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] ZGSOBQAJAUGRBK-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001577 simple distillation Methods 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- GGEJMDNJEAVNPS-UHFFFAOYSA-N tetradecylphosphinic acid Chemical compound CCCCCCCCCCCCCCP(O)=O GGEJMDNJEAVNPS-UHFFFAOYSA-N 0.000 description 1
- BVQJQTMSTANITJ-UHFFFAOYSA-N tetradecylphosphonic acid Chemical compound CCCCCCCCCCCCCCP(O)(O)=O BVQJQTMSTANITJ-UHFFFAOYSA-N 0.000 description 1
- 229910052861 titanite Inorganic materials 0.000 description 1
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C3/00—Treatment in general of inorganic materials, other than fibrous fillers, to enhance their pigmenting or filling properties
- C09C3/08—Treatment with low-molecular-weight non-polymer organic compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/51—Particles with a specific particle size distribution
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/22—Rheological behaviour as dispersion, e.g. viscosity, sedimentation stability
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Medicinal Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
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Abstract
Description
Claims (30)
- (a)約4nm〜約15nmの中央粒径を有する無機チタン酸塩又は無機ジルコン酸塩の粒子と、
(b)少なくとも1つの化合物と
を含む実質的に透明な材料であって、該粒子が該少なくとも1つの化合物中に均一に分散し、該粒子が、該粒子の少なくとも1つの表面官能基によって該少なくとも1つの化合物に結合し、該実質的に透明な材料が0.1s-1のせん断速度で約30,000センチポアズ以上の粘度を有する、実質的に透明な材料。 - 前記粒子の約80vol%以上が約20nm以下の粒径を有する、請求項1に記載の実質的に透明な材料。
- 0.1s-1のせん断速度で約50,000センチポアズ以上の粘度を有する、請求項1に記載の実質的に透明な材料。
- 前記粒子が、チタン酸バリウム、チタン酸ストロンチウム、チタン酸カリウム、チタン酸鉛、ジルコン酸バリウム、ジルコン酸ストロンチウム、ジルコン酸カリウム、ジルコン酸鉛、及びそれらの組み合わせからなる群より選択される、請求項1に記載の実質的に透明な材料。
- 前記化合物が、有機リン酸塩、有機ホスホン酸塩、有機ホスフィン酸塩、及び有機ジルコン酸塩からなる群より選択される、請求項1に記載の実質的に透明な材料。
- 前記化合物が約300ダルトン以上の分子量を有する、請求項1に記載の実質的に透明な材料。
- 前記粒子が、静電相互作用、共有結合、配位結合、及びそれらの組み合わせからなる群より選択される結合によって前記少なくとも1つの化合物に結合される、請求項1に記載の実質的に透明な材料。
- 二酸化チタンの粒子をさらに含み、該二酸化チタンの粒子が、約4nm〜約15nmの中央粒径を有し、前記少なくとも1つの化合物中に均一に分散され、該二酸化チタンの粒子の少なくとも1つの表面官能基を介して該少なくとも1つの化合物に結合される、請求項1に記載の実質的に透明な材料。
- 前記二酸化チタンの粒子の約80vol%以上が約20nm以下の粒径を有する、請求項8に記載の実質的に透明な材料。
- 前記二酸化チタンの粒子が、静電相互作用、共有結合、配位結合、及びそれらの組み合わせからなる群より選択される結合によって前記少なくとも1つの化合物に結合される、請求項8に記載の実質的に透明な材料。
- 前記実質的に透明な材料の他の成分と実質的に均一な混合物を形成するポリマーをさらに含む、請求項1に記載の実質的に透明な材料。
- 前記ポリマーが、シリコーン重合体、ポリアリーレンエーテル、ポリエーテルエーテルケトン、ポリエーテルケトンケトン、ポリエーテルイミド、環化ポリイミド、フッ素化ポリイミド、ポリベンゾイミダゾール、ベンゾオキサゾール、ポリオレフィン、ポリカーボネート、ポリイミド、ポリエステル、環状ポリオレフィン、及びエラストマーからなる群より選択される、請求項11に記載の実質的に透明な材料。
- 前記実質的に透明な材料の合計質量に基づいて、前記粒子及び前記少なくとも1つの化合物以外の任意の成分を合計で0〜約10wt%含む、請求項1に記載の実質的に透明な材料。
- 10°の反射角で複合材料に対して向けられる400nmの波長を有する光の約75%以上が2mm厚さの前記実質的に透明な材料を通過する、請求項1に記載の実質的に透明な材料。
- 約1.5以上の屈折率を有する、請求項1に記載の実質的に透明な材料。
- (a)光を発する発光ダイオードと、
(b)該発光ダイオードを封入し、発せられた光に対して実質的に透明な材料とを含み、該実質的に透明な材料が
(i)無機チタン酸塩又は無機ジルコン酸塩の粒子と、
(ii)少なくとも1つの化合物と
を含み、該粒子が該少なくとも1つの化合物中に均一に分散し、該粒子が、該粒子の少なくとも1つの表面官能基によって該少なくとも1つの化合物に結合し、該実質的に透明な材料が0.1s-1のせん断速度で約30,000センチポアズ以上の粘度を有する、発光素子。 - 前記粒子の約80vol%以上が約20nm以下の粒径を有する、請求項16に記載の発光素子。
- 前記実質的に透明な材料が0.1s-1のせん断速度で約50,000センチポアズ以上の粘度を有する、請求項16に記載の発光素子。
- 前記粒子が、チタン酸バリウム、チタン酸ストロンチウム、チタン酸カリウム、及びそれらの組み合わせからなる群より選択される、請求項16に記載の発光素子。
- 前記化合物が、有機リン酸塩、有機ホスホン酸塩、有機ホスフィン酸塩、及び有機ジルコン酸塩からなる群より選択される、請求項16に記載の発光素子。
- 前記化合物が約300ダルトン以上の分子量を有する、請求項16に記載の発光素子。
- 前記粒子が、静電相互作用、共有結合、配位結合、及びそれらの組み合わせからなる群より選択される結合によって前記少なくとも1つの化合物に結合される、請求項16に記載の発光素子。
- 前記実質的に透明な材料が二酸化チタンの粒子をさらに含み、該二酸化チタンの粒子が、約4nm〜約15nmの中央粒径を有し、前記少なくとも1つの化合物中に均一に分散され、該二酸化チタンの粒子の少なくとも1つの表面官能基を介して該少なくとも1つの化合物に結合される、請求項16に記載の発光素子。
- 前記二酸化チタンの粒子の約80vol%以上が約20nm以下の粒径を有する、請求項23に記載の発光素子。
- 前記二酸化チタンの粒子が、静電相互作用、共有結合、配位結合、及びそれらの組み合わせからなる群より選択される結合によって前記少なくとも1つの化合物に結合される、請求項23に記載の発光素子。
- 前記実質的に透明な材料が、該実質的に透明な材料の他の成分と実質的に均一な混合物を形成するポリマーをさらに含む、請求項16に記載の発光素子。
- 前記ポリマーが、シリコーン重合体、ポリアリーレンエーテル、ポリエーテルエーテルケトン、ポリエーテルケトンケトン、ポリエーテルイミド、環化ポリイミド、フッ素化ポリイミド、ポリベンゾイミダゾール、ベンゾオキサゾール、ポリオレフィン、ポリカーボネート、ポリイミド、ポリエステル、環状ポリオレフィン、及びエラストマーからなる群より選択される、請求項26に記載の発光素子。
- 前記実質的に透明な材料が、該実質的に透明な材料の合計質量に基づいて、前記粒子及び前記少なくとも1つの化合物以外の任意の成分を合計で0〜約10wt%含む、請求項16に記載の発光素子。
- 10°の反射角で前記実質的に透明な材料に対して向けられる約400nmの波長を有する光の約75%以上が約2mm厚さの該実質的に透明な材料を通過する、請求項16に記載の発光素子。
- 前記実質的に透明な材料が約1.5以上の屈折率を有する、請求項16に記載の発光素子。
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JP5570214B2 (ja) | 2014-08-13 |
JP2014007420A (ja) | 2014-01-16 |
WO2008008323A3 (en) | 2008-06-26 |
WO2008008323A2 (en) | 2008-01-17 |
US7470974B2 (en) | 2008-12-30 |
KR101330498B1 (ko) | 2013-11-15 |
US20080012032A1 (en) | 2008-01-17 |
EP2041806A2 (en) | 2009-04-01 |
KR20090031463A (ko) | 2009-03-25 |
EP2041806B1 (en) | 2019-01-23 |
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